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    Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
    86.
    发明授权
    Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films 有权
    具有螯合配体的钽酰氨基复合物，可用于TaN和Ta205薄膜的CVD和ALD

    公开(公告)号：US07750173B2

    公开(公告)日：2010-07-06

    申请号：US12013433

    申请日：2008-01-12

    申请人： Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

    发明人： Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

    IPC分类号： C07F9/00 ,  C01G35/00

    CPC分类号： C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.

    摘要翻译： 公开了式I的钽化合物，其用作形成含钽膜如阻挡层的前体。 可以通过CVD或ALD沉积式I的钽化合物以形成包括电介质层，电介质层上的阻挡层和阻挡层上的铜金属化的半导体器件结构，其中阻挡层包括含Ta层 和足够的碳，使得含Ta层是无定形的。 根据一个实施例，半导体器件结构通过CVD或ALD从包含式I的钽化合物的前体在低于约400℃的还原或惰性的沉积中制备 气氛，例如任选地含有还原剂的气体或等离子体。

    PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS
    88.
    发明申请
    PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS 有权
    用于原子层沉积和钛酸盐，钛酸盐和钛酸盐电介质膜的化学气相沉积的前体组合物

    公开(公告)号：US20100062150A1

    公开(公告)日：2010-03-11

    申请号：US12619165

    申请日：2009-11-16

    申请人： Chongying Xu ,  Tianniu Chen ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Thomas H. Baum

    发明人： Chongying Xu ,  Tianniu Chen ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Thomas H. Baum

    IPC分类号： B05D5/12

    CPC分类号： C23C14/088 ,  C07F17/00 ,  C23C16/409 ,  C23C16/45553

    摘要： Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

    摘要翻译： 用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。 前体具有式M（Cp）2，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1 -R 5各自彼此相同或不同，各自独立地 选自氢，C1-C12烷基，C1-C12氨基，C6-C10芳基，C1-C12烷氧基，C3-C6烷基甲硅烷基，C2-C12烯基，R1R2R3NNR3，其中R1，R2和R3可以相同或不同 并且各自独立地选自氢和C 1 -C 6烷基，以及包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现高介电常数的均匀涂布 材料制造闪存等微电子器件。