公开(公告)号：US07135350B1

公开(公告)日：2006-11-14

申请号：US11328419

申请日：2006-01-09

申请人： David D. Smith ,  Michael J. Cudzinovic ,  Keith R. McIntosh ,  Bharatkumar Gamanlal Mehta

发明人： David D. Smith ,  Michael J. Cudzinovic ,  Keith R. McIntosh ,  Bharatkumar Gamanlal Mehta

IPC分类号： H01L21/00

CPC分类号： H01L31/1804 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

摘要： In one embodiment, a method of forming doped regions in a substrate of a back side contact solar cell includes the steps of depositing a first doped oxide layer on a back side of a substrate, depositing a first undoped oxide layer over the first doped oxide layer, diffusing a first dopant from the first doped oxide layer into the substrate to form a first doped region in the substrate, and diffusing a second dopant into the substrate by way of a front side of the substrate, wherein the diffusion of the first dopant and the second dopant into the substrate are performed in-situ. The method may further include the steps of patterning the first doped and undoped oxide layers to expose portions of the back side of the substrate and depositing a second doped and undoped oxide layers on the back side of the substrate.

公开(公告)号：US06998288B1

公开(公告)日：2006-02-14

申请号：US10946564

申请日：2004-09-21

申请人： David D. Smith ,  Michael J. Cudzinovic ,  Keith R. McIntosh ,  Bharatkumar Gamanlal Mehta

发明人： David D. Smith ,  Michael J. Cudzinovic ,  Keith R. McIntosh ,  Bharatkumar Gamanlal Mehta

IPC分类号： H01L21/00

CPC分类号： H01L31/1804 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

摘要： In one embodiment, a method of forming doped regions in a substrate of a back side contact solar cell includes the steps of depositing a first doped oxide layer on a back side of a substrate, depositing a first undoped oxide layer over the first doped oxide layer, diffusing a first dopant from the first doped oxide layer into the substrate to form a first doped region in the substrate, and diffusing a second dopant into the substrate by way of a front side of the substrate, wherein the diffusion of the first dopant and the second dopant into the substrate are performed in-situ. The method may further include the steps of patterning the first doped and undoped oxide layers to expose portions of the back side of the substrate and depositing a second doped and undoped oxide layers on the back side of the substrate.

摘要翻译： 在一个实施例中，在背面接触太阳能电池的衬底中形成掺杂区域的方法包括以下步骤：在衬底的背面上沉积第一掺杂氧化物层，在第一掺杂氧化物层上沉积第一未掺杂氧化物层 将第一掺杂剂从第一掺杂氧化物层扩散到衬底中以在衬底中形成第一掺杂区域，并且通过衬底的前侧将第二掺杂剂扩散到衬底中，其中第一掺杂剂的扩散和 第二掺杂剂进入衬底是原位进行的。 该方法还可以包括以下步骤：图案化第一掺杂和未掺杂的氧化物层以暴露衬底背面的部分，并在衬底的背面上沉积第二掺杂和未掺杂的氧化物层。

公开(公告)号：US20170222072A1

公开(公告)日：2017-08-03

申请号：US15493021

申请日：2017-04-20

申请人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0368

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

公开(公告)号：US20170077336A1

公开(公告)日：2017-03-16

申请号：US14852315

申请日：2015-09-11

申请人： David D. Smith ,  Sung Dug Kim ,  Joseph Behnke ,  Hung-Ming Wang

发明人： David D. Smith ,  Sung Dug Kim ,  Joseph Behnke ,  Hung-Ming Wang

IPC分类号： H01L31/054 ,  H01L31/068 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/048 ,  H01L31/0236

CPC分类号： H01L31/0547 ,  H01L31/022441 ,  H01L31/02366 ,  H01L31/048 ,  H01L31/0684 ,  H01L31/18 ,  Y02E10/52 ,  Y02E10/547

摘要： A solar cell and a solar laminate are described. The solar cell can have a front side which faces the sun during normal operation and a back side opposite front side. The solar cell can include conductive contacts having substantially reflective outer regions disposed on the back side of the solar cell. The solar laminate can include a first encapsulant, the first encapsulant disposed on the back side of the solar cell and a second encapsulant. The solar laminate can include the solar cell laminated between the first and second encapsulant. The substantially reflective outer regions of the conductive contacts and the first encapsulant can be configured to scatter and/or diffuse light at the back side of the solar laminate for substantial light collection at the back side of the solar cell. Methods of fabricating the solar cell are also described herein.

摘要翻译： 描述了太阳能电池和太阳能层压板。 太阳能电池可以在正常操作期间具有面向太阳的前侧和与前侧相反的背面。 太阳能电池可以包括具有设置在太阳能电池的背面上的基本上反射的外部区域的导电触点。 太阳能层压板可以包括第一密封剂，设置在太阳能电池的背面上的第一密封剂和第二密封剂。 太阳能层压板可以包括层压在第一和第二密封剂之间的太阳能电池。 导电触点和第一密封剂的基本上反射的外部区域可以被配置为在太阳能电池层的背面散射和/或漫射光，以在太阳能电池的背面进行实质的光收集。 本文还描述了制造太阳能电池的方法。

公开(公告)号：US09577126B2

公开(公告)日：2017-02-21

申请号：US15000492

申请日：2016-01-19

申请人： David D. Smith ,  Timothy Weidman ,  Staffan Westerberg

发明人： David D. Smith ,  Timothy Weidman ,  Staffan Westerberg

IPC分类号： H01L31/0368 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0288 ,  H01L31/0745 ,  H01L31/0747

CPC分类号： H01L31/03685 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0288 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a back contact solar cell includes a crystalline silicon substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region is disposed above the crystalline silicon substrate. The first polycrystalline silicon emitter region is doped with dopant impurity species of a first conductivity type and further includes ancillary impurity species different from the dopant impurity species of the first conductivity type. A second polycrystalline silicon emitter region is disposed above the crystalline silicon substrate and is adjacent to but separated from the first polycrystalline silicon emitter region. The second polycrystalline silicon emitter region is doped with dopant impurity species of a second, opposite, conductivity type. First and second conductive contact structures are electrically connected to the first and second polycrystalline silicon emitter regions, respectively.

摘要翻译： 描述了使用离子注入制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。 在一个示例中，背接触太阳能电池包括具有光接收表面和背表面的晶体硅衬底。 第一多晶硅发射极区域设置在晶体硅衬底之上。 第一多晶硅发射极区掺杂有第一导电类型的掺杂剂杂质种类，并且还包括与第一导电类型的掺杂杂质种类不同的辅助杂质种类。 第二多晶硅发射极区域设置在晶体硅衬底之上并且与第一多晶硅发射极区域相邻但分离。 第二多晶硅发射极区掺杂有第二相反导电类型的掺杂杂质物质。 第一和第二导电接触结构分别电连接到第一和第二多晶硅发射极区域。

公开(公告)号：US20160315214A1

公开(公告)日：2016-10-27

申请号：US15197616

申请日：2016-06-29

申请人： Timothy Weidman ,  David D. Smith

发明人： Timothy Weidman ,  David D. Smith

IPC分类号： H01L31/18 ,  H01L31/068

CPC分类号： H01L31/182 ,  H01L31/022441 ,  H01L31/035272 ,  H01L31/0682 ,  H01L31/1864 ,  H01L31/1872 ,  H01L31/1876 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a method of fabricating alternating N-type and P-type emitter regions of a solar cell involves forming a silicon layer above a substrate. Dopant impurity atoms of a first conductivity type are implanted, through a first shadow mask, in the silicon layer to form first implanted regions and resulting in non-implanted regions of the silicon layer. Dopant impurity atoms of a second, opposite, conductivity type are implanted, through a second shadow mask, in portions of the non-implanted regions of the silicon layer to form second implanted regions and resulting in remaining non-implanted regions of the silicon layer. The remaining non-implanted regions of the silicon layer are removed with a selective etch process, while the first and second implanted regions of the silicon layer are annealed to form doped polycrystalline silicon emitter regions.

公开(公告)号：US09466750B2

公开(公告)日：2016-10-11

申请号：US14614355

申请日：2015-02-04

申请人： Peter J. Cousins ,  David D. Smith ,  Seung Bum Rim

发明人： Peter J. Cousins ,  David D. Smith ,  Seung Bum Rim

IPC分类号： H01L21/00 ,  H01L31/0747 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/20

CPC分类号： H01L31/0747 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

公开(公告)号：US20150349180A1

公开(公告)日：2015-12-03

申请号：US14292454

申请日：2014-05-30

申请人： David D. Smith ,  Staffan Westerberg

发明人： David D. Smith ,  Staffan Westerberg

IPC分类号： H01L31/065 ,  H01L31/0288 ,  H01L31/18 ,  H01L31/0368

CPC分类号： H01L31/065 ,  H01L31/0288 ,  H01L31/03682 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1868 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell may include a substrate having a front side facing the sun to receive solar radiation during normal operation and a backside opposite the front side. The solar cell may further include a polysilicon layer formed over the backside of the substrate. A P-type diffusion region and an N-type diffusion region may be formed in the polysilicon layer to provide a butting PN junction. The P-type diffusion region may have a first dopant concentration level and the N-type diffusion region may have a second dopant concentration level such that the first dopant concentration level is less than the second dopant concentration level.

摘要翻译： 太阳能电池可以包括在正常操作期间具有面向太阳以接收太阳辐射的正面的基板和与正面相反的背面。 太阳能电池还可以包括形成在衬底背面上的多晶硅层。 可以在多晶硅层中形成P型扩散区和N型扩散区，以提供对接PN结。 P型扩散区可以具有第一掺杂剂浓度水平，并且N型扩散区可以具有第二掺杂剂浓度水平，使得第一掺杂剂浓度水平小于第二掺杂剂浓度水平。

公开(公告)号：US20150318822A1

公开(公告)日：2015-11-05

申请号：US14320475

申请日：2014-06-30

申请人： Xiuwen Tu ,  David D. Smith ,  David Aitan Soltz

发明人： Xiuwen Tu ,  David D. Smith ,  David Aitan Soltz

IPC分类号： H02S50/10 ,  H02S50/15

CPC分类号： H02S50/10 ,  H02S50/15

摘要： A solar cell testing apparatus can include a first electrical probe configured to receive a first voltage at a first location of a solar cell. The solar cell testing apparatus can also include a second electrical probe configured to receive a second voltage at a second location of the solar cell, where the second location is of the same polarity as the first location.

摘要翻译： 太阳能电池测试装置可以包括被配置为在太阳能电池的第一位置处接收第一电压的第一电探针。 太阳能电池测试装置还可以包括配置成在太阳能电池的第二位置处接收第二电压的第二电探针，其中第二位置与第一位置具有相同的极性。

公开(公告)号：US20150280043A1

公开(公告)日：2015-10-01

申请号：US14227965

申请日：2014-03-27

申请人： David D. Smith

发明人： David D. Smith

IPC分类号： H01L31/068 ,  H01L31/18 ,  H01L31/0224

摘要： Methods of fabricating solar cells having trench-free emitter regions, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A thin dielectric layer is disposed on a portion of the back surface of the substrate. A first polycrystalline silicon emitter region is disposed on a first portion of the thin dielectric layer and doped with an impurity of a first conductivity type. A second polycrystalline silicon emitter region is disposed on a second portion of the thin dielectric layer proximate to the first polycrystalline silicon emitter region disposed on the first portion of the thin dielectric layer. The second polycrystalline silicon emitter region is doped with an impurity of a second, opposite, conductivity type. A total concentration of the impurity of the first conductivity type in the first polycrystalline silicon emitter region is at least an order of magnitude greater than a total concentration of the impurity of the second conductivity type in the second polycrystalline silicon emitter region.

摘要翻译： 描述了制造具有无沟槽发射极区域的太阳能电池的方法和所得到的太阳能电池。 在一个示例中，太阳能电池包括具有受光面和背面的基板。 薄的电介质层设置在基板的背面的一部分上。 第一多晶硅发射极区域设置在薄介电层的第一部分上并掺杂有第一导电类型的杂质。 第二多晶硅发射极区域设置在薄介电层的靠近设置在薄介电层的第一部分上的第一多晶硅发射极区域的第二部分上。 第二多晶硅发射极区掺杂有第二相反导电类型的杂质。 第一多晶硅发射极区域中的第一导电类型的杂质的总浓度比第二多晶硅发射极区域中的第二导电类型的杂质的总浓度至少大一个数量级。