公开(公告)号：US06225643B1

公开(公告)日：2001-05-01

申请号：US09158248

申请日：1998-09-22

申请人： Jenoe Tihanyi ,  Helmut Strack

发明人： Jenoe Tihanyi ,  Helmut Strack

IPC分类号： H01L2904

CPC分类号： H01L29/7802 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/6634 ,  H01L29/7395 ,  H01L29/7396

摘要： An SOI cell includes a semiconductor body having at least one insulator layer. A polycrystalline zone doped with a dopant of a first conductivity type is grown on the insulator layer. The polycrystalline zone is adjoined outside the region of the insulator layer by a semiconductor region, which is doped with the dopant of the first conduction type that has been diffused out of the polycrystalline zone. A dopant source having a dopant of a second conductivity type is also provided. A zone having the dopant of the second conductivity type is formed by diffusing the dopant out of the dopant source.

摘要翻译： SOI单元包括具有至少一个绝缘体层的半导体本体。 在绝缘体层上生长掺杂有第一导电类型的掺杂剂的多晶区。 多晶区域通过半导体区域与绝缘体层的区域相邻，该半导体区域掺杂有已经扩散到多晶区域的第一导电类型的掺杂剂。 还提供了具有第二导电类型的掺杂剂的掺杂剂源。 通过将掺杂剂从掺杂剂源扩散出来，形成具有第二导电类型的掺杂剂的区域。

公开(公告)号：US6061221A

公开(公告)日：2000-05-09

申请号：US272671

申请日：1999-03-18

申请人： Jenoe Tihanyi

发明人： Jenoe Tihanyi

IPC分类号： H03K17/08 ,  H03K17/082 ,  H02H5/04

CPC分类号： H03K17/0822 ,  H03K2017/0806

摘要： The electrical switch component has two temperature sensors. The first temperature sensor is provided at that location of the component which is warmest during operation. The first sensor switches the component off when a first, upper threshold value is reached, and switches the component on when the temperature falls below a second, lower threshold value. The oscillation owing to the first temperature sensor is switched on and off by the second temperature sensor, which is arranged remote from the first temperature sensor at a location that is less warm than the first temperature sensor. The second sensor has lower threshold values than the first temperature sensor.

摘要翻译： 电气开关组件有两个温度传感器。 第一温度传感器设置在操作期间最暖的部件的位置。 当达到第一个上限阈值时，第一个传感器关闭组件，当温度低于第二个阈值以下时，打开组件。 由第一温度传感器引起的振荡由第二温度传感器接通和断开，第二温度传感器远离第一温度传感器布置在比第一温度传感器温暖的位置。 第二传感器具有比第一温度传感器更低的阈值。

公开(公告)号：US5352932A

公开(公告)日：1994-10-04

申请号：US73095

申请日：1993-06-07

申请人： Jenoe Tihanyi

发明人： Jenoe Tihanyi

IPC分类号： H02H7/20 ,  H02M1/08 ,  H02M7/12 ,  H02M7/25 ,  H03K17/06 ,  H03K17/08 ,  H03K17/687 ,  H03K19/094

CPC分类号： H03K17/063

摘要： A first power FET has a source terminal, a gate terminal and a drain terminal and a load is connected in series with the source terminal of the power FET. A circuit configuration for triggering the first power FET includes a first input terminal. A first diode and a capacitor are connected between the first input terminal and the gate terminal of the first power FET. A second FET of the opposite channel type from that of the first power FET has a gate terminal and has drain and source terminals defining a drain-to-source path. A second diode is connected between the first diode and the capacitor and is connected through the drain-to-source path of the second FET to the drain terminal of the power FET. A resistor is connected between the gate and source terminals of the second FET. A controllable switch is connected to the gate terminal of the second FET. A second input terminal is connected to the controllable switch for receiving a voltage being lower than a supply voltage. A third depletion FET has a gate terminal connected to the controllable switch and has drain and source terminals defining a drain-to-source path connected between the gate terminal and the source terminal of the first power FET for discharging a gate-to-source capacitance of the first power FET.

摘要翻译： 第一功率FET具有源极端子，栅极端子和漏极端子，并且负载与功率FET的源极端子串联连接。 用于触发第一功率FET的电路配置包括第一输入端。 第一二极管和电容器连接在第一功率FET的第一输入端和栅极端之间。 与第一功率FET的相反通道类型的第二FET具有栅极端子，并且具有限定漏极到源极路径的漏极和源极端子。 第二二极管连接在第一二极管和电容器之间，并通过第二FET的漏极 - 源极路径连接到功率FET的漏极端子。 电阻器连接在第二FET的栅极和源极端子之间。 可控开关连接到第二FET的栅极端子。 第二输入端子连接到可控开关，用于接收低于电源电压的电压。 第三耗尽FET具有连接到可控开关的栅极端子，并且漏极和源极端子限定连接在第一功率FET的栅极端子和源极端子之间的漏极 - 源极路径，用于对栅极 - 源极电容放电 的第一个功率FET。

公开(公告)号：US5172290A

公开(公告)日：1992-12-15

申请号：US382523

申请日：1989-07-20

申请人： Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber ,  Rainald Sander

发明人： Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber ,  Rainald Sander

IPC分类号： H01L29/78 ,  H01L27/02 ,  H01L27/04 ,  H03K17/0812

CPC分类号： H03K17/08122 ,  H01L27/0251

摘要： The gate-source capacitance of a power MOSFET (1) can be protected against positive and negative excess voltages by two integrated Zener diodes (3, 4) the anodes of which are coupled to each other and the cathodes of which are respectively coupled to the gate and source terminals of the power MOSFET. However, when a control voltage is applied, the parasitic bipolar transistor associated with one of the Zener diodes is switched on and prevents the MOSFET from completely switching on. The parasitic bipolar transistor is rendered harmless by the fact that the anode terminal is coupled to a source terminal (S) MOSFET (1) when a gate-source voltage is applied.

摘要翻译： 功率MOSFET（1）的栅极 - 源极电容可以通过两个集成的齐纳二极管（3,4）被保护，以防止正和负的过剩电压，它们的阳极彼此耦合，并且阴极分别耦合到 功率MOSFET的栅极和源极端子。 然而，当施加控制电压时，与齐纳二极管之一相关联的寄生双极晶体管导通，并防止MOSFET完全导通。 当施加栅极 - 源极电压时，寄生双极晶体管由于阳极端子耦合到源极端子（S）MOSFET（1）的事实而变得无害。

公开(公告)号：US5160862A

公开(公告)日：1992-11-03

申请号：US788594

申请日：1991-11-06

申请人： Ludwig Leipold ,  Hubert Rothleitner ,  Rainald Sander ,  Jenoe Tihanyi

发明人： Ludwig Leipold ,  Hubert Rothleitner ,  Rainald Sander ,  Jenoe Tihanyi

IPC分类号： H03K17/06 ,  H03K17/082 ,  H03K17/16 ,  H03K17/687 ,  H03K17/695

CPC分类号： H03K17/0822 ,  H03K17/063 ,  H03K17/6877

摘要： In order to rapidly reduce the magnetic energy of an inductive load (2), the driving voltage must be high. When the load (2) is disconnected via a MOSFET (3), then a premature activation of the MOSFET (3) given reversal of the voltage at the inductive load (2) must be prevented. A series circuit of a Zener diode and of a controllable switch (3) is connected between the gate and the load (2). A current source (depletion MOSFET 5) whose current is lower than the current that would flow upon Zener breakdown is connected between the gate and the source of the power MOSFET (1). The MOSFET (3) becomes conductive upon Zener breakdown and the energy is quickly reduced by a high voltage, essentially by the Zener voltage.

摘要翻译： 为了快速降低感性负载（2）的磁能，驱动电压必须很高。 当负载（2）通过MOSFET（3）断开时，必须防止给定电感负载（2）电压反转的MOSFET（3）过早启动。 齐纳二极管和可控开关（3）的串联电路连接在栅极和负载（2）之间。 电流低于齐纳击穿时流过的电流的电流源（耗尽型MOSFET5）连接在功率MOSFET（1）的栅极和源极之间。 基于齐纳电压，MOSFET（3）在齐纳击穿时变为导通，并且能量通过高电压快速降低。

公开(公告)号：US4893165A

公开(公告)日：1990-01-09

申请号：US313045

申请日：1989-02-21

申请人： Gerhard Miller ,  Helmut Strack ,  Jenoe Tihanyi

发明人： Gerhard Miller ,  Helmut Strack ,  Jenoe Tihanyi

IPC分类号： H01L29/68 ,  H01L29/08 ,  H01L29/45 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L29/7395 ,  H01L29/0834 ,  H01L29/456

摘要： A field effect controllable bipolar transistor or isolated gate bipolar transistor (IGBT) has a drastically reduced inhibit delay charge, given identical on-state behavior, in that the anode zone has a thickness of less that 1 micrometer, it is doped with implanted ions with a dose of about 1.times.10.sup.12 through 1.times.10.sup.15 cm.sup.-2, and in that the life time of the minority charge carriers in the inner zone amounts to at least 1 microsecond.

摘要翻译： 给定相同的导通状态，场效应可控双极晶体管或隔离栅双极晶体管（IGBT）具有显着降低的抑制延迟电荷，因为阳极区具有小于1微米的厚度，其掺杂有注入离子 约1×10 12至1×10 15 cm -2的剂量，并且内区中少数电荷载体的寿命至少为1微秒。

公开(公告)号：US4875131A

公开(公告)日：1989-10-17

申请号：US342835

申请日：1989-04-25

申请人： Ludwig Leipold ,  Rainald Sander ,  Jenoe Tihanyi ,  Roland Weber

发明人： Ludwig Leipold ,  Rainald Sander ,  Jenoe Tihanyi ,  Roland Weber

IPC分类号： H01L23/58 ,  G01K7/01 ,  G05F1/10 ,  H01L21/8222 ,  H01L27/06 ,  H02H5/04 ,  H03K17/08 ,  H03K17/14

CPC分类号： H02H5/044 ,  G01K7/01 ,  H01L2924/0002

摘要： A circuit for monitoring the temperature of a semiconductor structural component. The circuit includes a bipolar transistor (1) in thermal contact with a semiconductor structural element to be monitored, and a MOSFET (11) connected in series with a current source (12). The MOSFET (11) is maintained in a nonconducting state with two Zener diodes (13, 14) if the bipolar transistor (1) is the standard operating temperature of the semiconductor structural element. This circuit provides for a reduced zero current signal. The current flowing through the bipolar transistor (1) increases with temperature and the gate-source voltage of the MOSFET (11) is increases until it switches off. If the current flowing through the MOSFET (11) is greater than the impressed current of the current source (12) the potential across the current source takes a step increase a value near the supply voltage (V.sub.DD). This voltage step can then be detected as an excess-temperature signal.

摘要翻译： 一种用于监测半导体结构部件的温度的电路。 电路包括与待监控的半导体结构元件热接触的双极晶体管（1）和与电流源（12）串联连接的MOSFET（11）。 如果双极晶体管（1）是半导体结构元件的标准工作温度，则MOSFET（11）保持在具有两个齐纳二极管（13,14）的非导通状态。 该电路提供减少的零电流信号。 流过双极晶体管（1）的电流随着温度而升高，并且MOSFET（11）的栅极 - 源极电压增加直至其断开。 如果流过MOSFET（11）的电流大于电流源（12）的外加电流，电流源两端的电位会在电源电压（VDD）附近逐步增加一个值。 然后可以将该电压步骤检测为过温信号。

公开(公告)号：US4730228A

公开(公告)日：1988-03-08

申请号：US886577

申请日：1986-07-16

申请人： Josef Einzinger ,  Christine Fellinger ,  Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber

发明人： Josef Einzinger ,  Christine Fellinger ,  Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber

IPC分类号： H01L29/73 ,  G01K3/00 ,  G01K7/01 ,  H01L21/331 ,  H01L23/58 ,  H02H5/04

CPC分类号： G01K7/01 ,  G01K3/005 ,  H01L2924/0002 ,  Y10S323/907 ,  Y10T307/773

摘要： The temperature of the power semiconductor component is sensed by a bipolar transistor. The bipolar transistor is in series with a depletion mode MOSFET whose gate and source electrodes are connected together. The drain electrode is also connected to a threshold element. Normally, the FET has low impedance, so that at the input of the threshold element source potential, e.g. ground potential, is present. With current rising as a function of temperature, the current through the FET is limited to a constant, essentially temperature-independent value, and the potential at the input of the threshold element rises steeply. This condition is detected as an overtemperature signal.

摘要翻译： 功率半导体部件的温度由双极晶体管感测。 双极晶体管与其栅极和源极电极连接在一起的耗尽型MOSFET串联。 漏极电极也连接到阈值元件。 通常，FET具有低阻抗，使得在阈值元件源电位的输入处，例如， 地面电位存在。 随着电流随温度的升高而升高，通过FET的电流被限制在恒定的本质上与温度无关的值，并且阈值元件输入端的电位急剧上升。 该条件被检测为过热信号。

公开(公告)号：US4728826A

公开(公告)日：1988-03-01

申请号：US886576

申请日：1986-07-16

申请人： Josef Einzinger ,  Christine Fellinger ,  Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber

发明人： Josef Einzinger ,  Christine Fellinger ,  Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber

IPC分类号： H03K17/04 ,  H03K17/0412 ,  H03K17/08 ,  H03K17/687 ,  H03K17/695

CPC分类号： H03K17/04123 ,  H03K17/687

摘要： The voltage peaks occuring upon disconnection of inductive loads are normally attenuated by a by-pass diode connected in parallel with the load. The driving countervoltage is thereby limited to the value of the forward voltage drop of the diode. For a power MOSFET with a source-side inductive load, the driving countervoltage is increased by placing a series connection of an additional MOSFET and a Zener diode between the gate of the power MOSFET and the connection of the load which is remote from the power MOSFET. The driving countervoltage at the source now becomes the Zener voltage plus the occuring gate-source voltage of the power MOSFET.

摘要翻译： 电感负载断开时出现的电压峰值通常与负载并联连接的旁路二极管衰减。 因此驱动逆变电压被限制为二极管正向压降的值。 对于具有源极电感负载的功率MOSFET，通过在功率MOSFET的栅极和远离功率MOSFET的负载的连接之间放置附加MOSFET和齐纳二极管的串联连接来提高驱动反电压 。 源极的驱动反电压现在变成齐纳电压加功率MOSFET的栅极 - 源极电压。

公开(公告)号：US4691129A

公开(公告)日：1987-09-01

申请号：US886578

申请日：1986-07-16

申请人： Josef Einzinger ,  Christine Fellinger ,  Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber

发明人： Josef Einzinger ,  Christine Fellinger ,  Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber

IPC分类号： H03K17/00 ,  H03K17/0812 ,  H03K17/16 ,  H03K17/687 ,  G05F1/40 ,  H02H7/00 ,  H03K3/01

CPC分类号： H03K17/687 ,  H03K17/08122 ,  H03K17/165

摘要： When a power MOSFET operated as a source follower is driven by an electronic switch, an interruption of the connection between ground and the electronic switch may result in the output potential of the electronic switch to change so that the power MOSFET is partially switched on. This causes a considerable amount of power dissipation. Therefore, there is placed between the source and gate electrodes of the MOSFET a depletion MOSFET whose gate is connected to the terminal of the electronic switch intended for connection to ground. Thus, the power MOSFET remains non-conducting upon interruption of the connection between the electronic switch and ground.

摘要翻译： 当作为源极跟随器工作的功率MOSFET由电子开关驱动时，接地和电子开关之间的连接中断可能导致电子开关的输出电位发生变化，从而使功率MOSFET部分接通。 这导致相当大的功率消耗。 因此，放置在MOSFET的源极和栅极电极之间，其栅极连接到用于连接到地的电子开关的端子的耗尽MOSFET。 因此，功率MOSFET在电子开关和地之间的连接断开时保持不导通。