公开(公告)号：US10770545B2

公开(公告)日：2020-09-08

申请号：US16314788

申请日：2016-08-30

Applicant: Intel Corporation

Inventor： Hubert C. George ,  Ravi Pillarisetty ,  Jeanette M. Roberts ,  Nicole K. Thomas ,  James S. Clarke

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/778 ,  H01L29/10 ,  H01L29/423 ,  H01L29/76 ,  H01L29/165 ,  H01L29/12 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/16 ,  G06N10/00 ,  H01L29/82

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; an insulating material disposed above the quantum well stack, wherein the insulating material includes a trench; and a gate metal disposed on the insulating material and extending into the trench.

公开(公告)号：US10763347B2

公开(公告)日：2020-09-01

申请号：US16349955

申请日：2016-12-14

Applicant: Intel Corporation

Inventor： Payam Amin ,  Nicole K. Thomas ,  James S. Clarke ,  Jessica M. Torres ,  Ravi Pillarisetty ,  Hubert C. George ,  Kanwaljit Singh ,  Van H. Le ,  Jeanette M. Roberts ,  Roman Caudillo ,  Zachary R. Yoscovits ,  David J. Michalak

IPC: H01L29/775 ,  G06N10/00 ,  H01L21/02 ,  H01L29/12 ,  H01L29/165 ,  H01L29/66 ,  H01L29/06 ,  H01L29/76 ,  H01L29/423 ,  H01L29/40 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/778 ,  H01L29/82

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum processing device may include: a quantum well stack having alternatingly arranged relaxed and strained layers; and a plurality of gates disposed above the quantum well stack to control quantum dot formation in the quantum well stack.

公开(公告)号：US20200258984A1

公开(公告)日：2020-08-13

申请号：US16274572

申请日：2019-02-13

Applicant: Intel Corporation

Inventor： Hubert C. George ,  Ravi Pillarisetty ,  Lester Lampert ,  James S. Clarke ,  Nicole K. Thomas ,  Stephanie A. Bojarski ,  Roman Caudillo ,  David J. Michalak ,  Jeanette M. Roberts ,  Thomas Francis Watson

IPC: H01L29/12 ,  H01L29/16 ,  H01L29/78 ,  G06N10/00

Abstract: Disclosed herein are quantum dot devices with conductive liners, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include a base, a first fin extending from the base, a second fin extending from the base, a conductive material between the first fin and the second fin, and a dielectric material between the conductive material and the first fin.

公开(公告)号：US10741664B2

公开(公告)日：2020-08-11

申请号：US16097432

申请日：2016-06-08

Applicant: Intel Corporation

Inventor： Ravi Pillarisetty ,  Jeanette M. Roberts ,  Hubert C. George ,  James S. Clarke ,  Nicole K. Thomas

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/165 ,  H01L29/423 ,  H01L29/76 ,  H01L29/06 ,  H01L29/12 ,  H01L29/78 ,  B82Y10/00 ,  B82Y40/00

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a plurality of first gates disposed on the quantum well stack; a plurality of pairs of spacers, each pair of spacers disposed on opposites sides of an associated first gate, wherein each spacer in a pair has a curved surface that curves away from the associated first gate; and a plurality of second gates disposed on the quantum well stack, wherein the curved surface of each spacer is adjacent to one of the second gates such that at least a portion of each second gate is shaped complementarily to the curved surface of an adjacent spacer.

公开(公告)号：US20200212210A1

公开(公告)日：2020-07-02

申请号：US16648402

申请日：2017-12-21

Applicant: Intel Corporation

Inventor： Ravi Pillarisetty ,  Nicole K. Thomas ,  Hubert C. George ,  Jeanette M. Roberts ,  Payam Amin ,  Zachary R. Yoscovits ,  Roman Caudillo ,  James S. Clarke

IPC: H01L29/778 ,  H01L29/76 ,  H01L29/82 ,  H01L29/12 ,  H01L29/165 ,  H01L29/66 ,  H01L21/321 ,  H01L21/8234

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a base; a fin extending away from the base, wherein the fin includes a quantum well layer; an insulating material at least partially above the fin, wherein the insulating material includes a trench above the fin; and a gate metal on the insulating material and extending into the trench.

公开(公告)号：US20190252536A1

公开(公告)日：2019-08-15

申请号：US16143676

申请日：2018-09-27

Applicant: Intel Corporation

Inventor： Hubert C. George ,  Ravi Pillarisetty ,  Lester Lampert ,  James S. Clarke ,  Nicole K. Thomas ,  Roman Caudillo ,  Kanwaljit Singh ,  David J. Michalak ,  Jeanette M. Roberts

IPC: H01L29/778 ,  H01L29/51 ,  H01L29/49 ,  H01L27/02 ,  H01L29/15

CPC classification number: H01L29/7782 ,  G06N10/00 ,  H01L23/5383 ,  H01L27/0255 ,  H01L29/15 ,  H01L29/4966 ,  H01L29/517

Abstract: A quantum dot device is disclosed that includes a fin and a gate above the fin. The fin may extend away from a base and include a quantum well stack in which one or more quantum dots may be formed during operation of the quantum dot device. The gate may include a gate electrode material having a first portion and a second portion, where the first portion is above the quantum well stack and the second portion is a portion that is not above the quantum well stack and is separated from the base by an insulating material. The quantum dot device may further include a metal structure between the second portion of the gate electrode material and the base, forming a portion of a diode provided in series with the gate, which diode may provide at least some ESD protection for the quantum dot device.

公开(公告)号：US20190229188A1

公开(公告)日：2019-07-25

申请号：US16316971

申请日：2016-08-10

Applicant: Intel Corporation

Inventor： James S. Clarke ,  Robert L. Bristol ,  Ravi Pillarisetty ,  Jeanette M. Roberts ,  Hubert C. George ,  Nicole K. Thomas

IPC: H01L29/12 ,  H01L29/423 ,  H01L29/66 ,  H01L29/80 ,  H01L29/82 ,  H01L29/06 ,  H01L29/165 ,  H01L29/778

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer; and a plurality of gates disposed above the quantum well stack, wherein individual ones of the plurality of gates have a footprint shape with two opposing linear faces and two opposing curved faces.

公开(公告)号：US10361353B2

公开(公告)日：2019-07-23

申请号：US15891518

申请日：2018-02-08

Applicant: Intel Corporation

Inventor： Hubert C. George ,  Zachary R. Yoscovits ,  Nicole K. Thomas ,  Lester Lampert ,  James S. Clarke ,  Jeanette M. Roberts ,  Ravi Pillarisetty ,  David J. Michalak ,  Kanwaljit Singh ,  Roman Caudillo

IPC: H01L29/06 ,  H01L39/14 ,  H01L39/22 ,  H01L29/12 ,  H01L29/15 ,  H01L29/423 ,  H01L29/40 ,  H01L39/24 ,  G06N10/00 ,  H01L25/16 ,  H01L23/00 ,  H01L23/498

Abstract: Disclosed herein are fabrication techniques for providing metal gates in quantum devices, as well as related quantum devices. For example, in some embodiments, a method of manufacturing a quantum device may include providing a gate dielectric over a qubit device layer, providing over the gate dielectric a pattern of non-metallic elements referred to as “gate support elements,” and depositing a gate metal on sidewalls of the gate support elements to form a plurality of gates of the quantum device.

公开(公告)号：US20190206992A1

公开(公告)日：2019-07-04

申请号：US16314788

申请日：2016-08-30

Applicant: Intel Corporation

Inventor： Hubert C. George ,  Ravi Pillarisetty ,  Jeanette M. Roberts ,  Nicole K. Thomas ,  James S. Clarke

IPC: H01L29/06 ,  H01L29/165 ,  H01L29/10 ,  H01L29/423 ,  H01L29/76 ,  H01L29/778 ,  H01L29/66 ,  G06N10/00

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; an insulating material disposed above the quantum well stack, wherein the insulating material includes a trench; and a gate metal disposed on the insulating material and extending into the trench.

公开(公告)号：US20190194016A1

公开(公告)日：2019-06-27

申请号：US16329676

申请日：2016-09-29

Applicant: Intel Corporation

Inventor： Jeanette M. Roberts ,  Ravi Pillarisetty ,  Nicole K. Thomas ,  Hubert C. George ,  James S. Clarke ,  Adel A. Elsherbini

IPC: B82Y10/00 ,  H01L23/538 ,  H01L25/065 ,  H01L29/12 ,  H01L29/423 ,  H01L29/66 ,  H01L29/76

CPC classification number: B82Y10/00 ,  H01L23/538 ,  H01L23/5383 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0655 ,  H01L29/0673 ,  H01L29/12 ,  H01L29/127 ,  H01L29/165 ,  H01L29/423 ,  H01L29/42376 ,  H01L29/66977 ,  H01L29/7613 ,  H01L2224/13101 ,  H01L2224/16225 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2924/00014

Abstract: Disclosed herein are quantum computing assemblies, as well as related computing devices and methods. For example, in some embodiments, a quantum computing assembly may include: a quantum device die to generate a plurality of qubits; a control circuitry die to control operation of the quantum device die; and a substrate; wherein the quantum device die and the control circuitry die are disposed on the substrate.