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    Fin density control of multigate devices through sidewall image transfer processes
    82.
    发明授权
    Fin density control of multigate devices through sidewall image transfer processes 有权
    通过侧壁图像传输过程对多设备进行翅片密度控制

    公开(公告)号：US09064901B1

    公开(公告)日：2015-06-23

    申请号：US14139121

    申请日：2013-12-23

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Hong He ,  Chiahsun Tseng ,  Chun-Chen Yeh ,  Yunpeng Yin

    IPC: H01L29/66 ,  H01L21/033 ,  H01L21/308

    CPC classification number: H01L21/3086 ,  H01L21/0338 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/32136 ,  H01L29/66545 ,  H01L29/66795

    Abstract: Methods and structures for fabricating fins for multigate devices are disclosed. In accordance with one method, a plurality of sidewalls are formed in or on a plurality of mandrels over a semiconductor substrate such that each of the mandrels includes a first sidewall composed of a first material and a second sidewall composed of a second material that is different from the first material. The first sidewall of a first mandrel of the plurality of mandrels is selectively removed. In addition, a pattern composed of remaining sidewalls of the plurality of sidewalls is transferred onto an underlying layer to form a hard mask in the underlying layer. Further, the fins are formed by employing the hard mask and etching semiconducting material in the substrate.

    Abstract translation: 公开了用于制造用于多设备的散热片的方法和结构。 根据一种方法，多个侧壁形成在半导体衬底上的多个心轴上或上方，使得每个心轴包括由第一材料组成的第一侧壁和由不同的第二材料组成的第二侧壁 从第一个材料。 选择性地去除多个心轴中的第一心轴的第一侧壁。 此外，由多个侧壁的剩余侧壁组成的图案被转移到下层上，以在下层中形成硬掩模。 此外，通过在基板中采用硬掩模和蚀刻半导体材料来形成翅片。

    Partially isolated Fin-shaped field effect transistors
    85.
    发明授权
    Partially isolated Fin-shaped field effect transistors 有权
    部分隔离鳍状场效应晶体管

    公开(公告)号：US09053965B2

    公开(公告)日：2015-06-09

    申请号：US14036759

    申请日：2013-09-25

    Applicant: International Business Machines Corporation

    Inventor： Hong He ,  Chiahsun Tseng ,  Chun-chen Yeh ,  Yunpeng Yin

    IPC: H01L27/088 ,  H01L29/66 ,  H01L27/12 ,  H01L21/8234 ,  H01L21/84

    CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/66477 ,  H01L29/66545

    Abstract: A transistor device and a method for forming a fin-shaped field effect transistor (FinFET) device, with the channel portion of the fins on buried silicon oxide, while the source and drain portions of the fins on silicon. An example method includes receiving a wafer with a silicon layer electrically isolated from a silicon substrate by a buried oxide (BOX) layer. The BOX layer is in physical contact with the silicon layer and the silicon substrate. The method further comprises implanting a well in the silicon substrate and forming vertical sources and drains over the well between dummy gates. The vertical sources and drains extend through the BOX layer, fins, and a portion of the dummy gates.

    Abstract translation: 一种用于形成鳍状场效应晶体管（FinFET）器件的晶体管器件和方法，其中鳍状物的沟道部分在掩埋的氧化硅上，而硅片上的鳍片的源极和漏极部分。 一种示例性方法包括接收具有通过掩埋氧化物（BOX）层与硅衬底电隔离的硅层的晶片。 BOX层与硅层和硅衬底物理接触。 该方法还包括在硅衬底中注入阱并在阱之间形成垂直源和漏极。 垂直的源极和漏极延伸穿过BOX层，鳍片和一部分虚拟栅极。

    FINFET WITH MERGE-FREE FINS
    86.
    发明申请
    FINFET WITH MERGE-FREE FINS 审中-公开
    FINFET具有无缝FINS

    公开(公告)号：US20150140762A1

    公开(公告)日：2015-05-21

    申请号：US14605018

    申请日：2015-01-26

    Applicant: International Business Machines Corporation

    Inventor： Hong He ,  Chiahsun Tseng ,  Junli Wang ,  Chun-chen Yeh ,  Yunpeng Yin

    IPC: H01L29/66 ,  H01L29/06

    CPC classification number: H01L29/785 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/78696

    Abstract: A semiconductor device comprises an insulation layer, an active semiconductor layer formed on an upper surface of the insulation layer, and a plurality of fins formed on the insulation layer. The fins are formed in the gate and spacer regions between a first source/drain region and second source/drain region, without extending into the first and second source/drain regions.

    Abstract translation: 半导体器件包括绝缘层，形成在绝缘层的上表面上的有源半导体层和形成在绝缘层上的多个鳍。 翅片形成在第一源极/漏极区域和第二源极/漏极区域之间的栅极和间隔区域中，而不延伸到第一和第二源极/漏极区域中。

    FinFET formed over dielectric
    88.
    发明授权
    FinFET formed over dielectric 有权
    FinFET在电介质上形成

    公开(公告)号：US08951850B1

    公开(公告)日：2015-02-10

    申请号：US13972032

    申请日：2013-08-21

    Applicant: International Business Machines Corporation

    Inventor： Hong He ,  Chiahsun Tseng ,  Chun-Chen Yeh ,  Yunpeng Yin

    IPC: H01L21/336 ,  H01L21/22 ,  H01L29/66 ,  H01L29/78

    CPC classification number: H01L29/0649 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/66439 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/785

    Abstract: A method for semiconductor fabrication includes patterning one or more mandrels over a semiconductor substrate, the one or more mandrels having dielectric material formed therebetween. A semiconductor layer is formed over exposed portions of the one or more mandrels. A thermal oxidation is performed to diffuse elements from the semiconductor layer into an upper portion of the one or more mandrels and concurrently oxidize a lower portion of the one or more mandrels to form the one or more mandrels on the dielectric material.

    Abstract translation: 一种用于半导体制造的方法包括在半导体衬底上图形化一个或多个心轴，所述一个或多个心轴在其间形成介电材料。 在一个或多个心轴的暴露部分上形成半导体层。 执行热氧化以将元件从半导体层扩散到一个或多个心轴的上部，并且同时氧化一个或多个心轴的下部以在电介质材料上形成一个或多个心轴。

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