公开(公告)号：US20130112996A1

公开(公告)日：2013-05-09

申请号：US13805279

申请日：2011-07-14

申请人： Takeyoshi Masuda

发明人： Takeyoshi Masuda

IPC分类号： H01L29/16 ,  H01L21/04

CPC分类号： H01L29/1608 ,  H01L21/0445 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0623 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/8613 ,  Y10S438/931

摘要： There are provided a high-quality semiconductor device having stable characteristics and a method for manufacturing such a semiconductor device. The semiconductor device includes a substrate having a main surface, and a silicon carbide layer. The silicon carbide layer is formed on the main surface of the substrate. The silicon carbide layer includes a side surface as an end surface inclined relative to the main surface. The side surface substantially includes one of a {03-3-8} plane and a {01-1-4} plane in a case where the silicon carbide layer is of hexagonal crystal type, and substantially includes a {100} plane in a case where the silicon carbide layer is of cubic crystal type.

摘要翻译： 提供了具有稳定特性的高质量半导体器件和制造这种半导体器件的方法。 半导体器件包括具有主表面的基底和碳化硅层。 碳化硅层形成在基板的主表面上。 碳化硅层包括作为相对于主表面倾斜的端面的侧表面。 在碳化硅层为六方晶型的情况下，侧表面基本上包括{03-3-8}面和{01-1-4}面之一，并且基本上包括{100}面 碳化硅层为立方晶型的情况。

公开(公告)号：US20130045592A1

公开(公告)日：2013-02-21

申请号：US13695775

申请日：2011-11-04

申请人： Tomihito Miyazaki ,  Hiromu Shiomi ,  Hideto Tamaso ,  Takeyoshi Masuda

发明人： Tomihito Miyazaki ,  Hiromu Shiomi ,  Hideto Tamaso ,  Takeyoshi Masuda

IPC分类号： H01L21/265 ,  C23C16/40

CPC分类号： H01L29/7802 ,  H01L21/02046 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/0209 ,  H01L21/02236 ,  H01L21/049 ,  H01L21/28238 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a SiC semiconductor device includes: a step of forming an oxide film on a surface of a SiC substrate; and a step of removing the oxide film. In the step of forming the oxide film, ozone gas is used. In the step of removing the oxide film, it is preferable to use halogen plasma or hydrogen plasma. In this way, problems associated with a chemical solution can be reduced while obtaining a method and device for manufacturing a SiC semiconductor device, by each of which a cleaning effect can be improved.

摘要翻译： 一种制造SiC半导体器件的方法包括：在SiC衬底的表面上形成氧化膜的步骤; 以及去除氧化膜的步骤。 在形成氧化膜的步骤中，使用臭氧气体。 在除去氧化膜的步骤中，优选使用卤素等离子体或氢等离子体。 以这种方式，可以减少与化学溶液相关的问题，同时获得用于制造SiC半导体器件的方法和装置，通过这些方法和装置可以提高清洗效果。

公开(公告)号：US20120309195A1

公开(公告)日：2012-12-06

申请号：US13579815

申请日：2011-07-29

申请人： Takeyoshi Masuda

发明人： Takeyoshi Masuda

IPC分类号： H01L21/302

CPC分类号： H01L29/1608 ,  H01L21/0445 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0623 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/8613 ,  Y10S438/931

摘要： A method for manufacturing a high-quality semiconductor device having stable characteristics is provided. The method for manufacturing the semiconductor device includes the steps of: preparing a silicon carbide layer having a main surface; forming a trench in the main surface by removing a portion of the silicon carbide layer; and removing a portion of a side wall of the trench by thermal etching.

摘要翻译： 提供了一种制造具有稳定特性的高质量半导体器件的方法。 制造半导体器件的方法包括以下步骤：制备具有主表面的碳化硅层; 通过去除一部分碳化硅层在主表面上形成沟槽; 以及通过热蚀刻去除沟槽的侧壁的一部分。

公开(公告)号：US20120309174A1

公开(公告)日：2012-12-06

申请号：US13577836

申请日：2011-12-07

申请人： Toru Hiyoshi ,  Takeyoshi Masuda

发明人： Toru Hiyoshi ,  Takeyoshi Masuda

IPC分类号： H01L21/20

CPC分类号： H01L29/7802 ,  H01L21/0475 ,  H01L29/1608 ,  H01L29/66068

摘要： A method of manufacturing a MOSFET includes the steps of preparing a silicon carbide substrate, forming an active layer on the silicon carbide substrate, forming a gate oxide film on the active layer, forming a gate electrode on the gate oxide film, forming a source contact electrode on the active layer, and forming a source interconnection on the source contact electrode. The step of forming the source interconnection includes the steps of forming a conductor film on the source contact electrode and processing the conductor film by etching the conductor film with reactive ion etching. Then, the method of manufacturing a MOSFET further includes the step of performing annealing of heating the silicon carbide substrate to a temperature not lower than 50° C. after the step of processing the conductor film.

摘要翻译： 制造MOSFET的方法包括以下步骤：制备碳化硅衬底，在碳化硅衬底上形成有源层，在有源层上形成栅极氧化膜，在栅极氧化膜上形成栅电极，形成源极接触 电极，并且在源极接触电极上形成源极互连。 形成源极互连的步骤包括在源极接触电极上形成导体膜并通过用反应离子蚀刻蚀刻导体膜来处理导体膜的步骤。 然后，制造MOSFET的方法还包括在处理导体膜的步骤之后执行将碳化硅衬底加热到​​不低于50℃的温度的退火的步骤。

公开(公告)号：US20120292742A1

公开(公告)日：2012-11-22

申请号：US13469951

申请日：2012-05-11

申请人： Satomi Itoh ,  Takeyoshi Masuda

发明人： Satomi Itoh ,  Takeyoshi Masuda

IPC分类号： H01L29/06

CPC分类号： H01L29/7802 ,  H01L21/8213 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395

摘要： A MOSFET includes a silicon carbide substrate, a buffer layer made of silicon carbide formed on the silicon carbide substrate, a drift layer made of silicon carbide of an n conductivity type formed on the buffer layer, a p type body region of a p conductivity type formed in the drift layer to include a main surface of the drift layer opposite to the buffer layer, a source contact electrode formed on the p type body region, and a drain electrode formed on a main surface of the silicon carbide substrate opposite to the buffer layer. A current path region having an impurity concentration higher than that of another region in the drift layer is formed in a region in the drift layer sandwiched between the buffer layer and the body region.

摘要翻译： MOSFET包括碳化硅衬底，由碳化硅衬底上形成的碳化硅制成的缓冲层，形成在缓冲层上的n导电型碳化硅的漂移层，形成为p型导电类型的ap型体区域 所述漂移层包括与所述缓冲层相对的所述漂移层的主表面，形成在所述p型体区上的源极接触电极，以及形成在所述碳化硅衬底的与所述缓冲层相反的主表面上的漏电极。 在夹在缓冲层和体区之间的漂移层中形成杂质浓度高于漂移层中的另一区域的电流路径区域。

公开(公告)号：US20120248461A1

公开(公告)日：2012-10-04

申请号：US13434233

申请日：2012-03-29

申请人： Takeyoshi Masuda ,  Toru Hiyoshi ,  Keiji Wada

发明人： Takeyoshi Masuda ,  Toru Hiyoshi ,  Keiji Wada

IPC分类号： H01L29/24

CPC分类号： H01L21/28 ,  H01L21/0475 ,  H01L21/049 ,  H01L21/306 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7813

摘要： A silicon carbide layer is epitaxially formed on a main surface of a substrate. The silicon carbide layer is provided with a trench having a side wall inclined relative to the main surface. The side wall has an off angle of not less than 50° and not more than 65° relative to a {0001} plane. A gate insulating film is provided on the side wall of the silicon carbide layer. The silicon carbide layer includes: a body region having a first conductivity type and facing a gate electrode with the gate insulating film being interposed therebetween; and a pair of regions separated from each other by the body region and having a second conductivity type. The body region has an impurity density of 5×1016 cm−3 or greater. This allows for an increased degree of freedom in setting a threshold voltage while suppressing decrease of channel mobility.

摘要翻译： 在基板的主表面上外延形成碳化硅层。 碳化硅层设置有具有相对于主表面倾斜的侧壁的沟槽。 侧壁相对于{0001}面具有不小于50°且不超过65°的偏角。 栅极绝缘膜设置在碳化硅层的侧壁上。 碳化硅层包括：具有第一导电类型且面对栅电极的主体区域，栅极绝缘膜插入其间; 以及一对由身体区域彼此隔开并具有第二导电类型的区域。 体区的杂质密度为5×1016 cm -3以上。 这允许在抑制信道移动性的降低的同时增加设置阈值电压的自由度。

公开(公告)号：US20120149175A1

公开(公告)日：2012-06-14

申请号：US13390869

申请日：2011-02-25

申请人： Keiji Wada ,  Takeyoshi Masuda ,  Tomihito Miyazaki ,  Toru Hiyoshi ,  Satomi Itoh ,  Hiromu Shiomi

发明人： Keiji Wada ,  Takeyoshi Masuda ,  Tomihito Miyazaki ,  Toru Hiyoshi ,  Satomi Itoh ,  Hiromu Shiomi

IPC分类号： H01L21/04

CPC分类号： H01L21/02052 ,  H01L21/02057 ,  H01L21/67051 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7802

摘要： A method of cleaning a SiC semiconductor includes the steps of forming an oxide film at the surface of a SiC semiconductor, and removing the oxide film. At the step of forming an oxide film, an oxide film is formed using ozone water having a concentration greater than or equal to 30 ppm. The forming step preferably includes the step of heating at least one of the surface of the SiC semiconductor and the ozone water. Thus, there can be obtained a method of cleaning a SiC semiconductor that can exhibit cleaning effect on the SiC semiconductor.

摘要翻译： 清洗SiC半导体的方法包括以下步骤：在SiC半导体的表面形成氧化膜，除去氧化物膜。 在形成氧化膜的步骤中，使用浓度大于或等于30ppm的臭氧水形成氧化膜。 成形步骤优选包括加热SiC半导体的表面和臭氧水中的至少一个的步骤。 因此，可以获得能够对SiC半导体具有清洁效果的SiC半导体的清洗方法。

公开(公告)号：US07981709B2

公开(公告)日：2011-07-19

申请号：US12593130

申请日：2008-03-10

申请人： Takeyoshi Masuda

发明人： Takeyoshi Masuda

IPC分类号： H01L21/00 ,  H01L21/8242 ,  H01L21/336

CPC分类号： H01L21/02433 ,  C30B29/36 ,  C30B33/02 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/3247 ,  H01L21/8213 ,  H01L29/0657 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for fabricating a semiconductor device includes the steps of forming a SiC film, forming trenches at a surface of the SiC film, heat-treating the SiC film with silicon supplied to the surface of the SiC film, and obtaining a plurality of macrosteps to constitute channels, at the surface of the SiC film by the step of heat-treating. Taking the length of one cycle of the trenches as L and the height of the trenches as h, a relation L=h(cot α+cot β) (where α and β are variables that satisfy the relations 0.5≦α, β≦45) holds between the length L and the height h. Consequently, the semiconductor device can be improved in property.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：形成SiC膜，在SiC膜的表面形成沟槽，用提供给SiC膜表面的硅对SiC膜进行热处理，并获得多个宏步骤 通过热处理步骤在SiC膜的表面构成通道。 将沟槽的一个周期的长度作为L和沟槽的高度为h，关系L = h（cotα+ cot＆bgr）（其中α和＆bgr是满足关系0.5＆nlE;α， ＆bgr;＆nlE; 45）保持在长度L和高度h之间。 因此，可以提高半导体器件的性能。

公开(公告)号：US20100127278A1

公开(公告)日：2010-05-27

申请号：US12593130

申请日：2008-03-10

申请人： Takeyoshi Masuda

发明人： Takeyoshi Masuda

IPC分类号： H01L29/161 ,  H01L21/04

CPC分类号： H01L21/02433 ,  C30B29/36 ,  C30B33/02 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/3247 ,  H01L21/8213 ,  H01L29/0657 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for fabricating a semiconductor device includes the steps of forming a SiC film, forming trenches at a surface of the SiC film, heat-treating the SiC film with silicon supplied to the surface of the SiC film, and obtaining a plurality of macrosteps to constitute channels, at the surface of the SiC film by the step of heat-treating. Taking the length of one cycle of the trenches as L and the height of the trenches as h, a relation L=h(cot α+cot β) (where α and β are variables that satisfy the relations 0.5≦α,β,≦45) holds between the length L and the height h. Consequently, the semiconductor device can be improved in property.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：形成SiC膜，在SiC膜的表面形成沟槽，用提供给SiC膜表面的硅对SiC膜进行热处理，并获得多个宏步骤 通过热处理步骤在SiC膜的表面构成通道。 将沟槽的一个周期的长度作为L和沟槽的高度为h，关系L = h（cotα+ cot＆bgr）（其中α和＆bgr是满足关系0.5＆nlE;α， ＆bgr;，＆nlE; 45）保持在长度L和高度h之间。 因此，可以提高半导体器件的性能。