公开(公告)号：US20080216959A1

公开(公告)日：2008-09-11

申请号：US11835446

申请日：2007-08-08

申请人： HIROYUKI KOBAYASHI ,  Kenji Maeda ,  Masaru Izawa ,  Kenetsu Yokogawa

发明人： HIROYUKI KOBAYASHI ,  Kenji Maeda ,  Masaru Izawa ,  Kenetsu Yokogawa

IPC分类号： H01L21/306

CPC分类号： H01L21/02087 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67745 ,  H01L21/681

摘要： The present invention provides a plasma processing apparatus which has the function of removing a deposit adhering to the periphery of the backside of a sample and has high throughput and low cost. That is, a deposit removal unit for removing the deposit on the periphery of the backside of the sample by pulsed laser irradiation is connected to an atmosphere-side transfer chamber of the plasma processing apparatus.

摘要翻译： 本发明提供一种等离子体处理装置，其具有除去附着在样品背面周围的沉积物，并且生产量高，成本低的功能。 也就是说，用于通过脉冲激光照射去除样品背面周围的沉积物的沉积物去除单元连接到等离子体处理装置的气氛侧传送室。

公开(公告)号：US20070186972A1

公开(公告)日：2007-08-16

申请号：US11730962

申请日：2007-04-05

申请人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa ,  Tadamitsu Kanekiyo

发明人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa ,  Tadamitsu Kanekiyo

IPC分类号： B08B7/00 ,  G01L21/30 ,  H01L21/302

CPC分类号： H01J37/32449 ,  C23C16/455 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/3065 ,  Y10T137/0402

摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of 02 or N2are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

摘要翻译： 本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。 等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中至少两种具有不同组成比的O 2或N 2 N的处理气体被引入到处理室 通过不同的气体入口，以便在保持工艺深度的面内均匀性的同时控制临界尺寸的面内均匀性。

公开(公告)号：US20070023143A1

公开(公告)日：2007-02-01

申请号：US11355162

申请日：2006-02-16

申请人： Hiroyuki Kobayashi ,  Masaru Izawa

发明人： Hiroyuki Kobayashi ,  Masaru Izawa

IPC分类号： H01L21/306

CPC分类号： H01J37/32642 ,  H01J37/32623 ,  H01J2237/335 ,  H01L21/67207 ,  H01L21/68735 ,  H01L21/68785 ,  Y10S156/915

摘要： A diameter of a mounting unit of the stage of an ashing processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.

摘要翻译： 灰化处理装置的台的安装单元的直径小于蚀刻处理装置的台的安装单元的直径，并且蚀刻处理装置的台的安装单元的直径小于 客观物品的直径。

公开(公告)号：US20060169207A1

公开(公告)日：2006-08-03

申请号：US11068780

申请日：2005-03-02

申请人： Hiroyuki Kobayashi ,  Kenetsu Yokogawa ,  Masaru Izawa ,  Kenji Maeda ,  Tomoyuki Tamura

发明人： Hiroyuki Kobayashi ,  Kenetsu Yokogawa ,  Masaru Izawa ,  Kenji Maeda ,  Tomoyuki Tamura

IPC分类号： G01N5/02 ,  H01L21/44 ,  C23C16/00

CPC分类号： H01L21/67742 ,  C23C16/4401 ,  H01J2237/022 ,  H01L21/67017 ,  H01L21/67748

摘要： A semiconductor manufacturing apparatus includes a vacuum processing chamber and a transportation chamber each including a gas supply unit and a gas exhaust unit, a sample placing electrode for placing a sample thereon and holding the sample in the processing chamber, a gate valve for opening/closing a passage between the processing chamber and the transportation chamber, a transportation device including a transportation arm disposed in the transportation chamber and a sample holding portion disposed at a tip of the arm to hold the sample on the sample holding portion, transport the sample from the transportation chamber to the processing chamber, and transport the processed sample from the processing chamber to the transportation chamber, and a gas blowing unit for blowing gas against the sample so as to be interlocked with a transportation position of the sample being transported to prevent adhesion of floating particles to a surface of the sample.

摘要翻译： 半导体制造装置包括真空处理室和输送室，每个真空处理室和输送室均包括气体供给单元和排气单元，用于将样品放置在其上并将样品保持在处理室中的样品放置电极，用于打开/关闭的闸阀 所述处理室与所述输送室之间的通道，包括设置在所述输送室中的输送臂的输送装置和设置在所述臂的前端的样品保持部，以将样品保持在所述样品保持部上， 运送室到处理室，并将处理后的样品从处理室输送到运送室;以及气体吹送单元，用于将气体吹向样品，以与被运送的样品的运输位置互锁，以防止粘附 漂浮的颗粒到样品的表面。

公开(公告)号：US20060016559A1

公开(公告)日：2006-01-26

申请号：US10911610

申请日：2004-08-05

申请人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa ,  Tadamitsu Kanekiyo

发明人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa ,  Tadamitsu Kanekiyo

IPC分类号： C23F1/00

CPC分类号： H01J37/32449 ,  C23C16/455 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/3065 ,  Y10T137/0402

摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

摘要翻译： 本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。 等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中具有不同组成比的O 2或N 2 2的至少两种处理气体被引入到处理室 通过不同的气体入口，以便在保持工艺深度的面内均匀性的同时控制临界尺寸的面内均匀性。

公开(公告)号：US20050017178A1

公开(公告)日：2005-01-27

申请号：US10788275

申请日：2004-03-01

申请人： Taro Ogawa ,  Toshiki Sugawara ,  Kazuhiko Hosomi ,  Masataka Shirai ,  Toshio Katsuyama ,  Kaoru Umemura ,  Masaru Izawa ,  Kazuhiko Sagara ,  Hiroshi Kakibayashi

发明人： Taro Ogawa ,  Toshiki Sugawara ,  Kazuhiko Hosomi ,  Masataka Shirai ,  Toshio Katsuyama ,  Kaoru Umemura ,  Masaru Izawa ,  Kazuhiko Sagara ,  Hiroshi Kakibayashi

IPC分类号： G01J3/14 ,  B01J19/00 ,  B01L3/00 ,  G01J3/42 ,  G01N21/05 ,  G01N21/31 ,  G01N21/35 ,  G01N21/3577 ,  G01N37/00

CPC分类号： G01N21/31 ,  B01L3/502715 ,  B01L2200/027 ,  B01L2300/0654 ,  B01L2300/0816 ,  B01L2300/0887 ,  G01N21/05 ,  G01N2021/0346 ,  G01N2021/058 ,  G01N2201/0873

摘要： A micro-spectroscopic measuring device having a structure in which a spectroscopic element made of an array of photonic crystals with defects, flow paths for introducing a sample, and light detecting elements with sensitivity to a band from near infrared to infrared are stacked.

摘要翻译： 具有这样的结构的微分光学测量装置被堆叠，其中由具有缺陷的光子晶体阵列制成的分光元件，用于引入样品的流动路径和对从近红外线到红外线的频带具有灵敏度的光检测元件。

公开(公告)号：US06677244B2

公开(公告)日：2004-01-13

申请号：US10135516

申请日：2002-05-01

申请人： Tetsuo Ono ,  Yasuhiro Nishimori ,  Takashi Sato ,  Naoyuki Kofuji ,  Masaru Izawa ,  Yasushi Goto ,  Ken Yoshioka ,  Hideyuki Kazumi ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takafumi Tokunaga ,  Motohiko Yoshigai

发明人： Tetsuo Ono ,  Yasuhiro Nishimori ,  Takashi Sato ,  Naoyuki Kofuji ,  Masaru Izawa ,  Yasushi Goto ,  Ken Yoshioka ,  Hideyuki Kazumi ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takafumi Tokunaga ,  Motohiko Yoshigai

IPC分类号： H01L21302

CPC分类号： H01J37/32082 ,  H01L21/32136

摘要： A plasma processing method for etching a sample having a gate oxide film includes generating a plasma in a vacuum chamber using electromagnetic waves, applying an rf bias power to the sample, turning off the rf bias power before a charged voltage of the sample reaches a breakdown voltage, turning on the rf bias power after the charged voltage of the sample has substantially dropped, and repeating the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time.

摘要翻译： 用于蚀刻具有栅极氧化膜的样品的等离子体处理方法包括使用电磁波在真空室中产生等离子体，向样品施加rf偏置功率，在样品的充电电压达到击穿之前关闭rf偏置功率 电压，在样品的充电电压基本上下降之后接通rf偏置功率，并且重复接通和关断rf偏置功率以处理样品。 关闭时间至少比准时更长。

公开(公告)号：US06673685B2

公开(公告)日：2004-01-06

申请号：US10083397

申请日：2002-02-27

申请人： Masahito Mori ,  Naoshi Itabashi ,  Masaru Izawa

发明人： Masahito Mori ,  Naoshi Itabashi ,  Masaru Izawa

IPC分类号： H01L21336

CPC分类号： H01L21/28123 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

摘要： A process for economical and efficient fabrication of gate electrodes no larger than 50 nm, which is beyond the limit of exposure, is characterized by gate-electrode trimming and mask trimming with high resist selectivity which are performed in combination. The process is also preferably characterized by performing trimming and drying cleaning in a vacuum environment and may also include steps of inspecting dimensions and contamination in a vacuum environment. The process can be implemented to provide the effects of forming a gate no longer than 50 nm (beyond the limit of exposure) without restrictions on the resist thickness; reducing contamination resulting from transfer of wafers from one step to next, thereby improving yields; preventing resist from hydrolysis by ArF laser, thereby reducing roughening which adversely affects the gate width; and ensuring stable yields despite variation in dimensions and contamination owing to the additional dry cleaning step and feed-forward control based on CD inspection and contamination inspection.

摘要翻译： 用于经济有效地制造不超过50nm的栅电极的方法，其超出了曝光的限度，其特征在于组合执行的具有高抗蚀剂选择性的栅电极修整和掩模修剪。 该方法还优选的特征在于在真空环境中进行修整和干燥清洁，并且还可以包括在真空环境中检查尺寸和污染的步骤。 可以实现该过程以提供形成栅极不超过50nm（超过曝光极限）而不限制抗蚀剂厚度的效果; 减少晶片从一步转移到下一步导致的污染，从而提高产量; 防止ArF激光器的抗水解，从而减少对栅极宽度有不利影响的粗糙化; 并确保稳定的产量，尽管由于额外的干洗步骤和基于CD检查和污染检查的前馈控制而导致尺寸和污染的变化。

公开(公告)号：US06506674B2

公开(公告)日：2003-01-14

申请号：US09964628

申请日：2001-09-28

申请人： Takenobu Ikeda ,  Masahiro Tadokoro ,  Masaru Izawa ,  Takashi Yunogami

发明人： Takenobu Ikeda ,  Masahiro Tadokoro ,  Masaru Izawa ,  Takashi Yunogami

IPC分类号： H01L214763

CPC分类号： H01L21/76897 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76814

摘要： A hole is formed on an insulating film made of silicon oxide by selectively plasma-etching the insulating film with an etching gas containing C5F8, O2, and Ar firstly under a condition in which the deposition property of a polymer layer is weak and secondly under a condition in which that of the polymer layer is strong.

公开(公告)号：US5928441A

公开(公告)日：1999-07-27

申请号：US809561

申请日：1997-03-24

申请人： Masaru Izawa ,  Yoshiaki Kusaba ,  Kenji Tsubouchi

发明人： Masaru Izawa ,  Yoshiaki Kusaba ,  Kenji Tsubouchi

IPC分类号： B21B1/08 ,  B21B27/10 ,  C23C22/00

CPC分类号： B21B27/10 ,  B21B1/088

摘要： A hot rolling method of steel products comprises rolling steel products while forming a film of an oxalate (such as iron oxalate, calcium oxalate and the like) on the roll surfaces which have contact with the steel products to be rolled and a hot rolling roll for steel products which has an oxalate film on the roll surfaces having contact with the steel products to be rolled. The oxalate film is effective in preventing steel products, particularly stainless steel products, from seizing between the rolls and the steel products to be rolled, preventing wear of the rolls, and preventing the deterioration of both the rolls and the steel products, when the steel products are subjected to hot rolling.

摘要翻译： PCT No.PCT / JP96 / 02287。 371日期1997年3月24日 102（e）1997年3月24日PCT PCT 1996年8月12日PCT公布。 出版物WO97 / 06900 日期1997年2月27日钢铁制品的热轧方法包括轧制钢产品，同时在与要轧制的钢产品接触的辊表面上形成草酸盐（如草酸铁，草酸钙等）的膜， 在与要轧制的钢制品接触的辊表面上具有草酸盐膜的钢产品用热轧辊。 草酸盐膜能够有效地防止钢材，特别是不锈钢制品在辊和被轧钢产品之间的卡住，防止辊的磨损，防止轧辊和钢材的劣化，当钢 产品经受热轧。