公开(公告)号：US08373164B2

公开(公告)日：2013-02-12

申请号：US12613769

申请日：2009-11-06

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Daisuke Kawae

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Daisuke Kawae

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  H01L21/00

CPC分类号： H01L29/41733 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0508 ,  H01L51/0512 ,  H01L51/0545 ,  H01L51/105

摘要： A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

摘要翻译： 下栅极薄膜晶体管中的源电极和漏电极之间可能发生的电场浓度被放宽并且抑制了开关特性的劣化的结构及其制造方法。 制造在源电极和漏电极上设置氧化物半导体层的底栅薄膜晶体管，与氧化物半导体层接触的源电极的侧表面的角度和角度;角度和角度; 与氧化物半导体层接触的漏电极的侧面的两个面积分别被设定为大于或等于20°且小于90°，​​使得从上边缘到下边缘的距离 每个电极的侧表面增加。

公开(公告)号：US08368072B2

公开(公告)日：2013-02-05

申请号：US12183330

申请日：2008-07-31

申请人： Masahiko Hayakawa ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Kengo Akimoto

发明人： Masahiko Hayakawa ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Kengo Akimoto

IPC分类号： H01L29/04

CPC分类号： H01L33/44 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/78621 ,  H01L2924/0002 ,  H01L2924/00

摘要： To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.

公开(公告)号：US08309961B2

公开(公告)日：2012-11-13

申请号：US12897419

申请日：2010-10-04

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/78696

摘要： In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.

摘要翻译： 在使用氧化物半导体形成沟道形成区域的沟道保护薄膜晶体管中，使用通过热处理脱水或脱氢的氧化物半导体层作为有源层，包括纳米晶体的晶体区域包含在表面 并且其余部分是无定形的或由非晶/非晶体和微晶体的混合物形成，其中非晶区域用微晶点缀。 通过使用具有这种结构的氧化物半导体层，可以防止由于进入水分或从表面部分去除氧气或从表面部分排出而引起的n型变化和产生寄生通道，并且与源极接触电阻 可以减少漏电极。

公开(公告)号：US08129717B2

公开(公告)日：2012-03-06

申请号：US12511285

申请日：2009-07-29

申请人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Kengo Akimoto ,  Kojiro Shiraishi

发明人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Kengo Akimoto ,  Kojiro Shiraishi

IPC分类号： H01L29/22 ,  H01L29/786

CPC分类号： H01L29/66969 ,  H01L21/46 ,  H01L27/1225 ,  H01L29/7869

摘要： It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

摘要翻译： 本发明的目的是提供一种包括具有良好的电性能和高可靠性的薄膜晶体管的半导体器件，以及一种以高生产率制造半导体器件的方法。 在倒置交错（底栅极）薄膜晶体管中，使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且在半导体层和源之间设置使用金属氧化物层形成的缓冲层， 漏电极层。 有意地提供金属氧化物层作为半导体层与源极和漏极电极层之间的缓冲层，从而获得欧姆接触。

公开(公告)号：US20120018771A1

公开(公告)日：2012-01-26

申请号：US13246894

申请日：2011-09-28

申请人： Shunpei YAMAZAKI ,  Kengo Akimoto

发明人： Shunpei YAMAZAKI ,  Kengo Akimoto

IPC分类号： H01L33/42 ,  H01L27/15

CPC分类号： H01L51/5206 ,  H01L27/3244 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/007 ,  H01L51/0071 ,  H01L51/0077 ,  H01L51/0081 ,  H01L51/5048

摘要： It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method. One feature of the invention is a light emitting device including a transistor and a light emitting element. In the light emitting element, an organic layer, a light emitting layer, and a second electrode are sequentially formed over a first electrode, and the transistor is electrically connected to the light emitting element through a wiring. Here, the wiring contains aluminum, carbon, and titanium. The organic layer is formed by a wet method. The first electrode which is in contact with the organic layer is formed from indium tin oxide containing titanium oxide.

摘要翻译： 本发明的目的是提供一种半导体器件，特别是可以容易地以湿法制造的发光元件。 本发明的一个特征是包括晶体管和发光元件的发光器件。 在发光元件中，在第一电极上顺序地形成有机层，发光层和第二电极，并且晶体管通过布线电连接到发光元件。 这里，布线包含铝，碳和钛。 有机层通过湿法形成。 与有机层接触的第一电极由含氧化钛的氧化铟锡形成。

公开(公告)号：US08043796B2

公开(公告)日：2011-10-25

申请号：US11957884

申请日：2007-12-17

申请人： Kengo Akimoto

发明人： Kengo Akimoto

IPC分类号： G03F7/26

CPC分类号： H01L27/1266 ,  G02F2001/136295 ,  H01L21/263 ,  H01L21/76802 ,  H01L21/76838 ,  H01L27/1214

摘要： A light absorption layer is formed over a substrate, the light absorption layer is selectively irradiated with a laser beam, and a region of the light absorption layer, which is irradiated with the laser beam, is removed. By adding an impurity element imparting one conductivity type or an inert element to a remaining part of the light absorption layer, a tensile stress of the light absorption layer is made lower than that before irradiation with the laser beam.

摘要翻译： 在基板上形成光吸收层，用激光束选择性地照射光吸收层，去除照射激光的光吸收层的区域。 通过向光吸收层的剩余部分添加赋予一种导电型或惰性元素的杂质元素，使得光吸收层的拉伸应力低于用激光束照射之前的拉伸应力。

公开(公告)号：US08034646B2

公开(公告)日：2011-10-11

申请号：US12486785

申请日：2009-06-18

申请人： Shunpei Yamazaki ,  Kengo Akimoto

发明人： Shunpei Yamazaki ,  Kengo Akimoto

IPC分类号： H01L21/00

CPC分类号： H01L51/5206 ,  H01L27/3244 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/007 ,  H01L51/0071 ,  H01L51/0077 ,  H01L51/0081 ,  H01L51/5048

摘要： It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method. One feature of the invention is a light emitting device including a transistor and a light emitting element. In the light emitting element, an organic layer, a light emitting layer, and a second electrode are sequentially formed over a first electrode, and the transistor is electrically connected to the light emitting element through a wiring. Here, the wiring contains aluminum, carbon, and titanium. The organic layer is formed by a wet method. The first electrode which is in contact with the organic layer is formed from indium tin oxide containing titanium oxide.

摘要翻译： 本发明的目的是提供一种半导体器件，特别是可以容易地以湿法制造的发光元件。 本发明的一个特征是包括晶体管和发光元件的发光器件。 在发光元件中，在第一电极上顺序地形成有机层，发光层和第二电极，并且晶体管通过布线电连接到发光元件。 这里，布线包含铝，碳和钛。 有机层通过湿法形成。 与有机层接触的第一电极由含氧化钛的氧化铟锡形成。

公开(公告)号：US07989815B2

公开(公告)日：2011-08-02

申请号：US12571552

申请日：2009-10-01

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/0266 ,  H01L27/1225 ,  H01L27/124

摘要： The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode.

摘要翻译： 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 第一布线层和第二布线层，其在栅极绝缘膜上方并且其端部与栅电极重叠; 以及氧化物半导体层，其在所述栅电极的上方并与所述栅极绝缘膜和所述第一布线层和所述第二布线层的端部接触。 非线性元件的栅电极和扫描线或信号线包括在布线中，非线性元件的第一或第二布线层直接连接到布线，以施加栅极的电位 电极。

公开(公告)号：US20110165740A1

公开(公告)日：2011-07-07

申请号：US13050002

申请日：2011-03-17

申请人： Toru Takayama ,  Kengo Akimoto

发明人： Toru Takayama ,  Kengo Akimoto

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L21/3105 ,  H01L21/31604 ,  H01L21/32055 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabilized zirconia having a fluorite structure is formed in the uppermost layer of a gate insulating film in order to improve quality of a microcrystalline semiconductor film to be formed in the initial stage of deposition. The microcrystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the microcrystalline semiconductor film around an interface with a base particularly has favorable crystallinity while by crystallinity of the base.

摘要翻译： 目的在于提供一种具有质量好的微晶半导体膜的半导体装置及其制造方法。 在使用微晶半导体膜形成的薄膜晶体管中，在栅极绝缘膜的最上层形成具有萤石结构的氧化钇稳定的氧化锆，以提高在初始沉积时形成的微晶半导体膜的质量 。 微晶半导体膜沉积在氧化钇稳定的氧化锆上，使得与碱的界面周围的微晶半导体膜特别具有良好的结晶度，同时通过碱的结晶度。

公开(公告)号：US07972855B2

公开(公告)日：2011-07-05

申请号：US11607032

申请日：2006-12-01

申请人： Kengo Akimoto ,  Hiroshi Kawashima ,  Sakayu Shimizu

发明人： Kengo Akimoto ,  Hiroshi Kawashima ,  Sakayu Shimizu

IPC分类号： C12N15/04 ,  C12N15/01 ,  C12N1/15 ,  C12N1/13 ,  C12P1/00 ,  C12P7/64 ,  C12P1/02

CPC分类号： A61K31/202 ,  A23C9/1528 ,  A23C11/04 ,  A23D9/00 ,  A23K20/158 ,  A23L2/52 ,  A23L5/00 ,  A23L31/00 ,  A23L33/12 ,  A23L33/14 ,  A23V2002/00 ,  A61K8/14 ,  A61K8/92 ,  A61K8/925 ,  A61K8/99 ,  A61K31/201 ,  A61Q19/00 ,  C12P7/6472 ,  C12R1/645 ,  A23V2200/224 ,  A23V2250/18 ,  A23V2250/1862 ,  A23V2250/187 ,  A23V2250/1868

摘要： There are provided microorganisms, for example, Mortierella alpina, having a property of producing a lipid containing unsaturated fatty acids as constituent fatty acids and extracellularly secreting the produced lipid encapsulated in lipid vesicles, methods of screening said microorganisms, as well as methods of efficiently producing a fatty acid-containing lipid using said microorganisms. Furthermore, there are provided lipid vesicles encapsulating a lipid containing unsaturated fatty acids, and foods, cosmetics, and animal feeds comprising said lipid vesicles added thereto. Artificially treated microorganisms or microorganisms collected from nature are grown on a solid medium, and microbial strains that form lipid vesicles at the periphery of the colonies and/or microbial strains that, when cultured in a transparent liquid medium, make the culture liquid cloudy are selected. The microorganisms obtained are cultured, lipid-containing lipid vesicles secreted in the culture liquid, are separated from the culture liquid, and the lipid is separated and purified.

摘要翻译： 提供了微生物，例如高山被孢霉，其具有产生含有不饱和脂肪酸的脂质作为构成脂肪酸的特性，并且细胞外分泌包封在脂质囊泡中的产生的脂质，筛选所述微生物的方法以及有效生产的方法 使用所述微生物的含脂肪酸的脂质。 此外，提供了包含含有不饱和脂肪酸的脂质的脂质囊泡，以及包含所述脂质囊泡的食品，化妆品和动物饲料。 人造处理的微生物或自然界收集的微生物在固体培养基上生长，并且在菌落和/或微生物菌株的周围形成脂质囊泡的微生物菌株，当在透明液体培养基中培养时，选择培养液混浊 。 培养得到的微生物，分泌到培养液中的含有脂质的脂质囊泡与培养液分离，分离纯化脂质。