公开(公告)号：US07369375B2

公开(公告)日：2008-05-06

申请号：US11477411

申请日：2006-06-30

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A first magnetic layer is provided on the lower conductive layer. On the first magnetic layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

摘要翻译： 磁阻效应头设置有设置有凹部的下导电层，在凹部设置有垂直偏置层。 第一磁性层设置在下导电层上。 在第一磁性层上，按照以下顺序层叠非磁性层，固定层，固定层和上层，以便不被放置在垂直偏置层的正上方。 非磁性层，固定层，固定层和上层被埋在绝缘层中。 此外，在上层和绝缘层上设置有上导电层。 在由垂直偏置层施加的磁场的方向上，自由层的长度比固定层长，并且自由层设置在垂直偏置层附近，固定层和垂直偏置之间的距离 层保持不变。

公开(公告)号：US20070047158A1

公开(公告)日：2007-03-01

申请号：US11477411

申请日：2006-06-30

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

摘要翻译： 磁阻效应头设置有设置有凹部的下导电层，在凹部设置有垂直偏置层。 在下导电层上提供自由层。 在自由层上，按照以下顺序层叠非磁性层，固定层，固定层和上层，以便不被放置在垂直偏置层的正上方。 非磁性层，固定层，固定层和上层被埋在绝缘层中。 此外，在上层和绝缘层上设置有上导电层。 在由垂直偏置层施加的磁场的方向上，自由层的长度比固定层长，并且自由层设置在垂直偏置层附近，固定层与垂直偏置之间的距离 层保持不变。

公开(公告)号：US20060007606A1

公开(公告)日：2006-01-12

申请号：US11227143

申请日：2005-09-16

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

公开(公告)号：US06955836B2

公开(公告)日：2005-10-18

申请号：US10326092

申请日：2002-12-23

申请人： Akira Kumagai ,  Keiji Ishibashi ,  Shigeru Mori

发明人： Akira Kumagai ,  Keiji Ishibashi ,  Shigeru Mori

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  H01L21/316

CPC分类号： C23C16/45565 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45591

摘要： A silicon oxide film formation method enhances the efficiency of generating atomic oxygen and improves film quality of a silicon film (SiO2 film) in forming the silicon oxide film using an RS-CVD system. Nitrogen atom containing gas (N2 gas, NO gas, N2O gas, NO2 gas or the like) is added to oxygen atom containing gas (O2 gas, O3 gas or the like) introduced into a plasma generating space in a vacuum container to produce plasmas with these gases and to thereby increase the quantity of atomic oxygen generated by the plasmas in the plasma generating space.

摘要翻译： 在使用RS-CVD系统形成氧化硅膜时，氧化硅膜形成方法提高了产生原子氧的效率并提高了硅膜（SiO 2膜）的膜质量。 将含氮原子的气体（N 2气体，NO气体，N 2 O气体，NO 2气体等）加入氧原子 将含有气体（O 2 O 2气体，O 3气体等）引入到真空容器中的等离子体产生空间中以产生具有这些气体的等离子体，从而增加数量 由等离子体产生空间中的等离子体产生的原子氧。

公开(公告)号：US06903908B2

公开(公告)日：2005-06-07

申请号：US09853622

申请日：2001-05-14

申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjo ,  Junichi Fujikata ,  Kunihiko Ishihara ,  Shigeru Mori

发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjo ,  Junichi Fujikata ,  Kunihiko Ishihara ,  Shigeru Mori

IPC分类号： G01R33/02 ,  G01R31/317 ,  G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  G11B5/40 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/12 ,  G11B5/11

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/40 ,  G11B2005/3996

摘要： A magnetoresistive effect sensor uses a shielded-type magnetoresistive effect element using a magnetoresistive effect film formed by a basic configuration of a combination of a free layer, a barrier layer formed on the free layer, and a fixed layer formed on the barrier layer, wherein a sensing current flows substantially perpendicular to the magnetoresistive effect film, and wherein an amorphous material or a microcrystalline material is used in a lower shield.

摘要翻译： 磁阻效应传感器使用屏蔽型磁阻效应元件，其使用由自由层，形成在自由层上的阻挡层和形成在阻挡层上的固定层的组合的基本结构形成的磁阻效应膜，其中 感测电流基本上垂直于磁阻效应膜流动，并且其中在下屏蔽中使用无定形材料或微晶材料。

公开(公告)号：US06775110B1

公开(公告)日：2004-08-10

申请号：US09076111

申请日：1998-05-12

申请人： Kazuhiko Hayashi ,  Shigeru Mori ,  Masafumi Nakada

发明人： Kazuhiko Hayashi ,  Shigeru Mori ,  Masafumi Nakada

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F1/0572 ,  H01F10/30 ,  H01F10/3268 ,  H01F10/3295

摘要： A magnetoresistance effect device has the basic structure of substrate/sublayer/NiFe layer/CoFe layer/non-magnetic layer/fixed magnetic layer/antiferromagnetic layer. The sublayer may be Ta at a film thickness of not less than 0.2 nm but less than 3.0 nm, or Hf at a film thickness of not less than 0.2 nm but not greater than 1.5 nm, or Zr at a film thickness of not less than 0.2 nm but not greater than 2.5 nm. It is permissible to use only an NiFe layer instead of the NiFe layer/CoFe layer.

摘要翻译： 磁阻效应器件具有基板/子层/ NiFe层/ CoFe层/非磁性层/固定磁性层/反铁磁层的基本结构。 子层可以是不小于0.2nm但小于3.0nm的膜厚度的Ta或膜厚度不小于0.2nm但不大于1.5nm的Hf，或者膜厚度不小于 0.2nm但不大于2.5nm。 可以仅使用NiFe层代替NiFe层/ CoFe层。

公开(公告)号：US06757086B1

公开(公告)日：2004-06-29

申请号：US09710328

申请日：2000-11-09

申请人： Shigeru Mori ,  Akira Shirakura ,  Nobuhiro Kihara ,  Takahiro Toyoda

发明人： Shigeru Mori ,  Akira Shirakura ,  Nobuhiro Kihara ,  Takahiro Toyoda

IPC分类号： G03H130

CPC分类号： G03H1/30 ,  G03H1/02 ,  G03H1/268 ,  G03H2001/0204 ,  G03H2210/441 ,  G03H2210/454

摘要： The image data generator 1 produces image data for recording into a holographic stereogram. The image data generator 1 combines a stereo image model being at least a part of a three-dimensional object image prepared in advance with a separately captured image to provide a synthetic image and produces a parallax image train from the synthetic image. The three-dimensional object image prepared in advance and stereo image model being the part of the three-dimensional object are supplied from the 3D image source 4 to the image data generator 1. The image data generator 1 is also supplied with a two-dimensional image separately captured from the photographic unit 5 such as a digital still camera for example.

摘要翻译： 图像数据生成器1产生用于记录到全息立体图中的图像数据。 图像数据生成器1将作为预先准备的三维物体图像的至少一部分的立体图像模型与单独拍摄的图像组合以提供合成图像，并从合成图像生成视差图像序列。 预先准备的三维物体图像和作为三维物体的一部分的立体图像模型从3D图像源4提供给图像数据生成器1.图像数据生成器1还被提供有二维 例如分别从诸如数码相机的摄影单元5拍摄的图像。

公开(公告)号：US06703564B2

公开(公告)日：2004-03-09

申请号：US09812817

申请日：2001-03-21

申请人： Shigeru Mori

发明人： Shigeru Mori

IPC分类号： H05K103

CPC分类号： H05K1/0271 ,  H05K3/4602 ,  H05K3/4623 ,  H05K3/4626 ,  H05K3/4688 ,  H05K2201/0278 ,  H05K2201/068 ,  H05K2201/09536 ,  H05K2201/0959

摘要： A printed wiring board is formed by a printed wiring substrate having a plurality of a wiring layer, and a thermal expansion buffering sheet having lower coefficient of thermal expansion than that of said printed wiring substrate, which is integrally laminated on a surface of the printed wiring substrate.

摘要翻译： 印刷布线板由具有多个布线层的印刷布线基板和热膨胀系数比所述印刷布线基板的热膨胀系数低的热膨胀缓冲片形成，该片材整体层压在印刷布线的表面上 基质。

公开(公告)号：US06485831B1

公开(公告)日：2002-11-26

申请号：US09570696

申请日：2000-05-12

申请人： Motoo Fukushima ,  Kunio Itoh ,  Shigeru Mori ,  Masaki Kasahima ,  Yoshitaka Hamada ,  Mikio Aramata

发明人： Motoo Fukushima ,  Kunio Itoh ,  Shigeru Mori ,  Masaki Kasahima ,  Yoshitaka Hamada ,  Mikio Aramata

IPC分类号： B32B1800

CPC分类号： H01B1/22 ,  H05K3/323 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2995 ,  Y10T428/2996

摘要： A conductive powder having an organic silicon polymer layer on the surface of each particle and a metal layer enclosing the silicon polymer layer possesses a stronger bond between the particle base and the metal even at elevated temperature and exhibits a high and stable conductivity and heat resistance.

摘要翻译： 在每个颗粒的表面上具有有机硅聚合物层的导电粉末和包围硅聚合物层的金属层即使在升高的温度下也具有更强的颗粒基体和金属之间的结合，并表现出高且稳定的导电性和耐热性。

公开(公告)号：US6110651A

公开(公告)日：2000-08-29

申请号：US208588

申请日：1998-12-10

申请人： Motoo Fukushima ,  Shigeru Mori

发明人： Motoo Fukushima ,  Shigeru Mori

IPC分类号： G03F7/075 ,  G03F7/32 ,  G03F7/38 ,  H05K3/00 ,  H05K3/02 ,  H05K3/10 ,  G03F7/30

CPC分类号： G03F7/0754 ,  G03F7/325 ,  H05K3/02 ,  H05K3/105

摘要： A polysilane pattern-bearing substrate is prepared by the steps of (1) forming a polysilane film on a substrate, (2) subjecting the polysilane film to selective light exposure in the presence of a first solvent which does not dissolve polysilane, but dissolves siloxane, for converting the polysilane in selected areas to siloxane for thereby forming a pattern, (3) removing only the siloxane from the substrate of step (2) using a second solvent which does not dissolve polysilane, but dissolves siloxane, and (4) completely removing the second solvent. The polysilane pattern has a high degree of definition.

摘要翻译： 通过以下步骤制备聚硅烷图案承载基材：（1）在基材上形成聚硅烷膜，（2）在不溶解聚硅烷的第一溶剂存在下使聚硅烷膜进行选择性曝光，但溶解硅氧烷 用于将所选区域中的聚硅烷转化成硅氧烷，从而形成图案，（3）使用不溶解聚硅烷但溶解硅氧烷的第二溶剂仅除去步骤（2）的基质的硅氧烷，（4）完全 除去第二溶剂。 聚硅烷图案具有高度的定义。