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    Method of making tunable thin film acoustic resonators
    83.
    发明授权
    Method of making tunable thin film acoustic resonators 有权
    制造可调谐薄膜声谐振器的方法

    公开(公告)号：US06507983B1

    公开(公告)日：2003-01-21

    申请号：US09192163

    申请日：1998-11-13

    Applicant: Richard C. Ruby ,  Paul Philip Merchant

    Inventor： Richard C. Ruby ,  Paul Philip Merchant

    IPC: H04R1700

    CPC classification number: H03H9/174 ,  H03H3/04 ,  H03H9/02133 ,  H03H9/02236 ,  H03H9/583 ,  H03H9/588 ,  H03H2009/02181 ,  Y10T29/42

    Abstract: An acoustical resonator comprising top and bottom electrodes that sandwich a PZ layer. The resonance frequency of the acoustical resonator may be adjusted after fabrication by utilizing heating elements included in the acoustical resonator and/or by adjusting the thickness of a tuning layer. In the preferred embodiment of the present invention, the electrodes comprise Mo layers. One embodiment of the present invention is constructed on a Si3N4 membrane. A second embodiment of the present invention is constructed such that it is suspended over a substrate on metallic columns. In the preferred embodiment, the electrodes are deposited by a method that minimizes the stress in the electrodes.

    Abstract translation: 包括夹着PZ层的顶部和底部电极的声学谐振器。 可以通过利用声谐振器中包含的加热元件和/或通过调节调谐层的厚度来调整声学谐振器的共振频率。 在本发明的优选实施例中，电极包括Mo层。 本发明的一个实施方案构造在Si 3 N 4膜上。 本发明的第二实施例构造成使得其悬挂在金属柱上的基板上。 在优选实施例中，通过使电极中的应力最小化的方法来沉积电极。

    Microcap wafer-level package
    84.
    发明授权
    Microcap wafer-level package 有权

    公开(公告)号：US06429511B2

    公开(公告)日：2002-08-06

    申请号：US09969432

    申请日：2001-10-01

    Applicant: Richard C. Ruby ,  Tracy E. Bell ,  Frank S. Geefay ,  Yogesh M. Desai

    Inventor： Richard C. Ruby ,  Tracy E. Bell ,  Frank S. Geefay ,  Yogesh M. Desai

    IPC: H01L2348

    CPC classification number: B81C1/00301 ,  B81B2207/095 ,  H01L2224/48463 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/00

    Abstract: A microcap wafer-level package is provided in which a micro device is connected to bonding pads on a base wafer. A peripheral pad on the base wafer encompasses the bonding pads and the micro device. A cap wafer has gaskets formed thereon using a thick photoresist semiconductor photolithographic process. Bonding pad gaskets match the perimeters of the bonding pads and a peripheral pad gasket matches the peripheral pad on the base wafer. Wells are located inside the perimeters of the bond pad gaskets and are formed to a predetermined depth in the cap wafer. The cap wafer is then placed over the base wafer to cold weld bond the gaskets to the pads and form a hermetically sealed volume between the bonding pad gaskets and the peripheral pad gasket. The cap wafer is then thinned below the predetermined depth until the wells become through holes that provide access to the bonding pads inside the package, but outside the hermetically sealed volume, for connecting wires from a micro device utilizing system.

    Acoustic resonator filter with reduced electromagnetic influence due to die substrate thickness
    85.
    发明授权
    Acoustic resonator filter with reduced electromagnetic influence due to die substrate thickness 有权
    声谐振器滤波器，由于芯片基板的厚度而降低了电磁影响

    公开(公告)号：US06377137B1

    公开(公告)日：2002-04-23

    申请号：US09659254

    申请日：2000-09-11

    Applicant: Richard C. Ruby

    Inventor： Richard C. Ruby

    IPC: H03H954

    CPC classification number: H03H9/02125 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/16195 ,  H03H3/02 ,  H03H9/1014 ,  H03H9/564 ,  H03H2003/021 ,  Y10S438/959 ,  Y10T29/42 ,  H01L2924/00014

    Abstract: A plurality of acoustic resonators are manufactured in a batch process by forming cavities in a substrate and filling the cavities with a sacrificial layer. An FBAR membrane comprising a bottom electrode, a piezoelectric layer, and a top electrode is formed over each cavity and the sacrificial layer. The substrate is then thinned and the substrate is separated into a plurality of dice using a scribe and break process. The sacrificial layer is then removed and the FBAR filter is mounted in a package with thermal vias being thermal communication with underside of the FBAR filter. The production method improves thermal properties by increasing the efficiency of heat dissipation from the FBAR filter. In addition, electromagnetic interference is decreased by reducing the distance between a primary current flowing over the surface of the FBAR filter and an image current flowing in a ground plane beneath the FBAR filter.

    Abstract translation: 通过在衬底中形成空腔并用牺牲层填充空腔，以分批工艺制造多个声谐振器。 在每个空腔和牺牲层上形成包括底电极，压电层和顶电极的FBAR膜。 然后将基板变薄，并且使用划线和断裂工艺将基板分离成多个骰子。 然后去除牺牲层，并且FBAR过滤器安装在具有与FBAR过滤器的下侧热连通的热通孔的封装中。 该生产方法通过提高FBAR过滤器的散热效率来改善热性能。 此外，通过减少在FBAR滤波器的表面上流过的初级电流与在FBAR滤波器下面的接地平面中流动的图像电流之间的距离减小电磁干扰。

    Microcap wafer-level package
    86.
    发明授权
    Microcap wafer-level package 失效
    微型晶圆级封装

    公开(公告)号：US06376280B1

    公开(公告)日：2002-04-23

    申请号：US09415284

    申请日：1999-10-08

    Applicant: Richard C. Ruby ,  Tracy E. Bell ,  Frank S. Geefay ,  Yogesh M. Desai

    Inventor： Richard C. Ruby ,  Tracy E. Bell ,  Frank S. Geefay ,  Yogesh M. Desai

    IPC: H01L2144

    CPC classification number: B81C1/00301 ,  B81B2207/07 ,  B81C1/00484 ,  H01L2224/48463 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: A microcap wafer-level package is provided in which a micro device is connected to bonding pads on a base wafer. A peripheral pad on the base wafer encompasses the bonding pads and the micro device. A cap wafer has gaskets formed thereon using a thick photoresist semiconductor photolithographic process. Bonding pad gaskets match the perimeters of the bonding pads and a peripheral pad gasket matches the peripheral pad on the base wafer. Wells are located inside the perimeters of the bond pad gaskets and are formed to a predetermined depth in the cap wafer. The cap wafer is then placed over the base wafer to cold weld bond the gaskets to the pads and form a hermetically sealed volume between the bonding pad gaskets and the peripheral pad gasket. The cap wafer is then thinned below the predetermined depth until the wells become through holes that provide access to the bonding pads inside the package, but outside the hermetically sealed volume, for connecting wires from a micro device utilizing system.

    Abstract translation: 提供了一种微型晶片级封装，其中微型器件连接到基片上的焊盘。 基底晶片上的外围焊盘包围接合焊盘和微型器件。 盖晶片使用厚的光致抗蚀剂半导体光刻工艺在其上形成垫圈。 接合垫垫片与焊盘的周长相匹配，外围衬垫垫片与基底晶片上的外围焊盘相匹配。 孔位于接合垫垫片的周边内，并且形成在盖晶片中的预定深度。 然后将盖晶片放置在基底晶片上，以将焊盘冷却焊接到焊盘，并在焊盘垫片和外围焊盘垫圈之间形成气密密封的体积。 然后将盖晶片减薄到预定深度以下，直到阱变成通孔，其提供对封装内的接合焊盘的访问，但是在气密密封的体积外部，用于从微器件利用系统连接导线。

    SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters
    88.
    发明授权
    SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters 失效
    SBAR结构和制造SBAR.FBAR薄膜加工技术的制造SBAR / BAR过滤器的方法

    公开(公告)号：US6060818A

    公开(公告)日：2000-05-09

    申请号：US88964

    申请日：1998-06-02

    Applicant: Richard C. Ruby ,  Yogesh Desai ,  Donald R. Bradbury

    Inventor： Richard C. Ruby ,  Yogesh Desai ,  Donald R. Bradbury

    IPC: H04R17/10 ,  G10K9/122 ,  H03H3/02 ,  H03H3/08 ,  H03H9/17 ,  H03H9/25 ,  H01L41/08

    CPC classification number: H03H9/173 ,  H03H3/02 ,  H03H9/02133 ,  H03H9/585 ,  Y10T29/42

    Abstract: An acoustical resonator and a method for making the same. A resonator according to the present invention includes a layer of piezoelectric material sandwiched between first and second electrodes. The first electrode includes a conducting sheet having a RMS variation in height of less than 2 .mu.m. The resonator bridges a cavity in a substrate on which the resonator is constructed. The resonator is constructed by creating a cavity in the substrate and filling the same with a sacrificial material that can be rapidly removed from the cavity after the deposition of the various layers making up the resonator. The surface of the filled cavity is polished to provide a RMS variation in height of less than 0.5 .mu.m. The first electrode is deposited on the polished surface to a thickness that assures that the RMS variation in height of the metallic layer is less than 2 .mu.m. The piezoelectric layer is deposited on the first electrode and the second electrode is then deposited on the piezoelectric layer. The sacrificial material is then removed from the cavity by opening vias into the cavity and removing the material through the vias. The preferred sacrificial material is phophor-silica-glass.

    Abstract translation: 声谐振器及其制造方法。 根据本发明的谐振器包括夹在第一和第二电极之间的压电材料层。 第一电极包括高度小于2μm的RMS变化的导电片。 谐振器桥接构成谐振器的衬底中的空腔。 谐振器通过在衬底中形成空腔并用牺牲材料填充谐振器来构造，该牺牲材料可以在构成谐振器的各种层的沉积之后从腔中快速去除。 抛光填充空腔的表面以提供小于0.5μm的RMS高度的变化。 第一电极沉积在抛光表面上，以确保金属层的RMS高度小于2μm的厚度。 压电层沉积在第一电极上，然后将第二电极沉积在压电层上。 然后通过将通孔打开到空腔中并且通过通孔去除材料而将牺牲材料从腔中移除。 优选的牺牲材料是磷石英玻璃。

    Post-fabrication tuning of acoustic resonators
    89.
    发明授权
    Post-fabrication tuning of acoustic resonators 失效
    声谐振器的制后调谐

    公开(公告)号：US5780713A

    公开(公告)日：1998-07-14

    申请号：US752702

    申请日：1996-11-19

    Applicant: Richard C. Ruby

    Inventor： Richard C. Ruby

    IPC: C23C16/08 ,  H03H3/04 ,  C25D5/00

    CPC classification number: H03H3/04 ,  C23C16/08 ,  H03H2003/0428 ,  Y10T29/42

    Abstract: A system is described that tunes the resonance frequency of a thin film acoustic resonator to a desired frequency after the resonator is fabricated. The resonator has a metal layer in an acoustic path of the resonator. The system includes a substantial vacuum reaction chamber within which the resonator is located. A heater is provided that heats the metal layer to an elevated temperature to either grow or etch the metal layer depending on a reaction gas introduced into the reaction chamber. A control circuit is also provided that controls the heater to heat the metal layer such that the thickness of the metal layer is adjusted to obtain the desired frequency after fabrication of the resonator. Methods of tuning the resonance frequency of the acoustic resonator to the desired frequency are also described.

    Abstract translation: 描述了在制造谐振器之后将薄膜声谐振器的谐振频率调谐到期望频率的系统。 谐振器在谐振器的声路中具有金属层。 该系统包括真空反应室，谐振器所在的真空反应室。 提供加热器，其将金属层加热到升高的温度，以根据引入反应室的反应气体来生长或蚀刻金属层。 还提供控制电路，其控制加热器以加热金属层，使得在制造谐振器之后调整金属层的厚度以获得期望的频率。 还描述了将声谐振器的谐振频率调谐到期望频率的方法。

    Variable superconducting delay line having means for independently controlling constant delay time or constant impedance
    90.
    发明授权
    Variable superconducting delay line having means for independently controlling constant delay time or constant impedance 失效
    可变超导延迟线具有独立控制恒定延迟时间或恒定阻抗的装置

    公开(公告)号：US5208213A

    公开(公告)日：1993-05-04

    申请号：US864429

    申请日：1991-04-12

    Applicant: Richard C. Ruby

    Inventor： Richard C. Ruby

    IPC: H03H7/34 ,  H03H11/26

    CPC classification number: H03H7/34 ,  H03H11/265 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

    Abstract: A variable superconducting delay line system and method having a high temperature superconducting trace and ground plane characterized by a variable inductance L per unit length and capacitance C per unit length, wherein the system and method permit users to select a delay time for an incoming signal propagating through a the transmission line. The system is adapted to keep the ratio of L/C constant, while independently changing L and C to achieve the desired delay time, which corresponds to the product of L times C.

    Abstract translation: 一种具有高温超导迹线和接地平面的可变超导延迟线系统和方法，其特征在于每单位长度可变电感L和每单位长度的电容C，其中该系统和方法允许用户为传入的信号选择延迟时间 通过传输线。 该系统适于保持L / C的比例恒定，同时独立地改变L和C以达到所需的延迟时间，这对应于L次乘积C。

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