公开(公告)号：US20100281453A1

公开(公告)日：2010-11-04

申请号：US12834273

申请日：2010-07-12

Applicant: Lex Kosowsky ,  Robert Fleming

Inventor： Lex Kosowsky ,  Robert Fleming

IPC: G06F17/50 ,  G06F9/455

CPC classification number: G06F17/5068 ,  H05K1/0254 ,  H05K1/0259 ,  H05K1/0293 ,  H05K1/0373 ,  H05K3/0005 ,  H05K2201/0738 ,  H05K2203/105

Abstract: A substrate device is designed by identifying one or more criteria for handling of a transient electrical event on the substrate device. The one or more criteria may be based at least in part on an input provided from a designer. From the one or more criteria, one or more characteristics may be determined for integrating VSD material as a layer within or on at least a portion of the substrate device. The layer of VSD material may be positioned to protect one or more components of the substrate from the transient electrical condition.

公开(公告)号：US20100263200A1

公开(公告)日：2010-10-21

申请号：US12820939

申请日：2010-06-22

Applicant: Lex Kosowsky

Inventor： Lex Kosowsky

IPC: H01P11/00

CPC classification number: G06K19/02 ,  G06K19/0701 ,  G06K19/0715 ,  G06K19/07735 ,  G06K19/07749 ,  H01L23/60 ,  H01L23/66 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/14 ,  H01Q1/2225 ,  H01Q7/00 ,  H05K1/0254 ,  H05K1/0373 ,  H05K2201/0738 ,  Y10T29/49016 ,  H01L2924/00

Abstract: A wireless communication device, such as an RFID tag, is provided material that is dielectric, unless a voltage is applied that exceeds the materials characteristic voltage level. In the presence of such voltage, the material becomes conductive. The integration of such material into the device may be mechanical and/or electrical.

公开(公告)号：US20100243302A1

公开(公告)日：2010-09-30

申请号：US12731557

申请日：2010-03-25

Applicant: Lex Kosowsky ,  Bhret Graydon ,  Robert Fleming

Inventor： Lex Kosowsky ,  Bhret Graydon ,  Robert Fleming

IPC: H05K1/11 ,  H05K1/09

CPC classification number: H05K1/0257 ,  H01C1/142 ,  H01C1/148 ,  H01C7/1006 ,  H05K1/0259 ,  H05K1/0373 ,  H05K1/167 ,  H05K2201/0738

Abstract: Various aspects provide for structures and devices to protect against spurious electrical events (e.g., electrostatic discharge). Some embodiments incorporate a voltage switchable dielectric material (VSDM) bridging a gap between two conductive pads. Normally insulating, the VSDM may conduct current from one pad to the other during a spurious electrical event (e.g., shunting current to ground). Some aspects include gaps having a gap width that is greater than 50% of a spacing between electrical leads connected to the pads. Some devices include single layers of VSDM. Some devices include multiple layers of VSDM. Various devices may be designed to increase a ratio of active volume (of VSDM) to inactive volume.

Abstract translation: 各种方面提供了用于防止假电气事件（例如静电放电）的结构和装置。 一些实施例包括桥接两个导电焊盘之间的间隙的可开关电介质材料（VSDM）。 通常绝缘，VSDM可能在杂散电气事件（例如，将电流分流到地）期间将电流从一个焊盘传导到另一个焊盘。 一些方面包括间隙宽度大于连接到焊盘的电引线间距的50％的间隙。 一些设备包括VSDM的单层。 一些设备包括多层VSDM。 可以设计各种设备以增加活动体积（VSDM）与非活动体积的比率。

公开(公告)号：US20100159259A1

公开(公告)日：2010-06-24

申请号：US12642799

申请日：2009-12-19

Applicant: Lex Kosowsky ,  Robert Fleming ,  Ning Shi ,  Junjun Wu

Inventor： Lex Kosowsky ,  Robert Fleming ,  Ning Shi ,  Junjun Wu

IPC: B32B15/04 ,  B32B9/04 ,  H01B1/00 ,  H01B1/04

CPC classification number: H01L27/1021 ,  H01C7/105 ,  H01L23/60 ,  H01L23/62 ,  H01L27/0288 ,  H01L2924/0002 ,  H05K1/0257 ,  H05K2201/0738 ,  Y10T428/31504 ,  Y10T428/31678 ,  H01L2924/00

Abstract: A composition of VSD material comprises a binder, and one or more types of particles that include a concentration of doped semiconductor particles.

Abstract translation: VSD材料的组合物包括粘合剂和包括掺杂半导体颗粒的浓度的一种或多种类型的颗粒。

公开(公告)号：US20100155670A1

公开(公告)日：2010-06-24

申请号：US12717102

申请日：2010-03-03

Applicant: Lex Kosowsky ,  Robert Fleming

Inventor： Lex Kosowsky ,  Robert Fleming

IPC: H01B1/12

CPC classification number: H01C7/10 ,  H01C17/06513 ,  H01C17/0652 ,  H01C17/06526 ,  H01C17/06586 ,  H05K1/0254 ,  H05K1/0373 ,  H05K1/167 ,  H05K2201/0209 ,  H05K2201/0738

Abstract: A composition of voltage switchable dielectric (VSD) material that utilizes semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material.

Abstract translation: 使用具有较高纵横比的半导体或导电材料的可变压电介质（VSD）材料的组合物，用于增强VSD材料的机械和电学特性。

公开(公告)号：US20100044079A1

公开(公告)日：2010-02-25

申请号：US12608315

申请日：2009-10-29

Applicant: Lex Kosowsky

Inventor： Lex Kosowsky

IPC: H05K1/00 ,  C25D5/02 ,  C25F3/02 ,  B05D5/12

CPC classification number: C25D5/022 ,  C25D5/54 ,  H05K1/0257 ,  H05K1/0259 ,  H05K1/0373 ,  H05K1/0393 ,  H05K1/056 ,  H05K3/07 ,  H05K3/188 ,  H05K3/423 ,  H05K3/426 ,  H05K3/4644 ,  H05K2201/0215 ,  H05K2201/0738 ,  H05K2203/0557 ,  H05K2203/1168 ,  H05K2203/1492

Abstract: Systems and methods include depositing one or more materials on a voltage switchable dielectric material. In certain aspects, a voltage switchable dielectric material is disposed on a conductive backplane. In some embodiments, a voltage switchable dielectric material includes regions having different characteristic voltages associated with deposition thereon. Some embodiments include masking, and may include the use of a removable contact mask. Certain embodiments include electrografting. Some embodiments include an intermediate layer disposed between two layers.

公开(公告)号：US20070126018A1

公开(公告)日：2007-06-07

申请号：US11562289

申请日：2006-11-21

Applicant: Lex Kosowsky

Inventor： Lex Kosowsky

IPC: H01L33/00

CPC classification number: H05K1/0257 ,  H01L25/167 ,  H01L51/5203 ,  H01L2924/0002 ,  H01L2924/12044 ,  H05K1/0259 ,  H05K1/0373 ,  H05K1/05 ,  H05K1/167 ,  H05K2201/0738 ,  H05K2201/10106 ,  H01L2924/00

Abstract: A voltage switchable dielectric material (VSD) material as part of a light-emitting component, including LEDs and OLEDs.

Abstract translation: 作为发光部件的一部分的可变压电介质材料（VSD）材料，包括LED和OLED。

公开(公告)号：US06797145B2

公开(公告)日：2004-09-28

申请号：US10315496

申请日：2002-12-09

Applicant: Lex Kosowsky

Inventor： Lex Kosowsky

IPC: C25D548

CPC classification number: H05K1/0254 ,  C25D5/54 ,  H05K1/0373 ,  H05K1/167 ,  H05K3/188 ,  H05K3/423 ,  H05K3/426 ,  H05K2201/0215 ,  H05K2201/0738 ,  H05K2203/105 ,  Y10T29/49117 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49155

Abstract: An electrochemical processing method is provided for forming a current carrying device for semiconductor chip packaging and similar applications. The method comprises selecting sections of a substrate to carry current wherein a selected section is at least partly covered with a voltage switchable dielectric material, rendering the voltage switchable dielectric material conductive, and electrochemically forming a current carrying material directly on the voltage switchable dielectric material. The voltage switchable dielectric material can have a characteristic voltage, such that when a voltage having a magnitude exceeding the characteristic voltage is applied to the voltage switchable dielectric material, the voltage switchable dielectric material switches from a dielectric material to a conductive material. When conductive, the voltage switchable dielectric material is amenable to electrochemical processing such as electroplating.

Abstract translation: 提供一种用于形成用于半导体芯片封装的载流装置和类似应用的电化学处理方法。 该方法包括选择衬底的部分以承载电流，其中所选择的部分至少部分地被可开关电介质材料覆盖，使得电压可切换电介质材料导电，并且电化学地在可开关电介质材料上直接形成载流材料​​。 电压可切换介电材料可以具有特征电压，使得当具有超过特征电压的电压的电压被施加到可开关电介质材料时，可切换电介质材料从电介质材料切换到导电材料。 导电时，电压可切换介电材料适用于诸如电镀的电化学处理。