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    PLASMA IMMERSED ION IMPLANTATION PROCESS
    81.
    发明申请
    PLASMA IMMERSED ION IMPLANTATION PROCESS 有权
    等离子体离子植入过程

    公开(公告)号：US20080138967A1

    公开(公告)日：2008-06-12

    申请号：US11608357

    申请日：2006-12-08

    申请人： Shijian Li ,  Kartik Ramaswamy ,  Biagio Gallo ,  Dong Hyung Lee ,  Majeed A. Foad

    发明人： Shijian Li ,  Kartik Ramaswamy ,  Biagio Gallo ,  Dong Hyung Lee ,  Majeed A. Foad

    IPC分类号： H01L21/425

    CPC分类号： H01L21/2236 ,  H01L29/66575

    摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, supplying a gas mixture including a reacting gas and a reducing gas into the chamber, and implanting ions from the gas mixture into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a hydrogen containing reducing gas into the chamber, and implanting ions from the gas mixture into the substrate.

    摘要翻译： 提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。 在一个实施例中，通过等离子体浸入离子注入工艺将离子注入衬底的方法包括将衬底提供到处理室中，将包括反应气体和还原气体的气体混合物供应到室中，以及从气体中注入离子 混合物进入底物。 在另一个实施例中，该方法包括将衬底提供到处理室中，将包括使气体和含氢还原气体反应的气体混合物供应到腔室中，以及将离子从气体混合物注入到衬底中。

    High selectivity slurry compositions for chemical mechanical polishing
    84.
    发明申请
    High selectivity slurry compositions for chemical mechanical polishing 审中-公开
    用于化学机械抛光的高选择性浆料组合物

    公开(公告)号：US20060097219A1

    公开(公告)日：2006-05-11

    申请号：US11258466

    申请日：2005-10-24

    申请人： Benjamin Bonner ,  Anand Iyer ,  Olivier Nguyen ,  Donald Chua ,  Christopher Lee ,  Shijian Li

    发明人： Benjamin Bonner ,  Anand Iyer ,  Olivier Nguyen ,  Donald Chua ,  Christopher Lee ,  Shijian Li

    IPC分类号： C09K13/00 ,  H01L21/461

    CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463

    摘要： A chemical-mechanical polishing composition that includes less than about 1% wt. abrasive, an additive, and water, where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of polishing a semiconductor substrate in a shallow trench isolation process, the method including contacting the substrate with a polishing pad of a polishing apparatus while applying a high selectivity slurry to the polishing pad, where the slurry comprises less than about 1% wt. abrasive, an additive, and water, and where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of making a chemical-mechanical polishing slurry composition, the method including adding together an abrasive, an additive and water to form the slurry, where a weigh percent of the additive is greater than a weight percent of the abrasive, and the abrasive and additive together comprise less than 2% by wt. of the slurry.

    摘要翻译： 化学机械抛光组合物，其包含小于约1重量％ 研磨剂，添加剂和水，其中添加剂的重量百分比大于研磨剂的重量百分比。 此外，在浅沟槽隔离工艺中抛光半导体衬底的方法，该方法包括使衬底与抛光装置的抛光垫接触，同时向抛光垫施加高选择性浆料，其中浆料包含小于约1％ 重量 研磨剂，添加剂和水，并且其中添加剂的重量百分比大于研磨剂的重量百分比。 另外，制备化学 - 机械抛光浆料组合物的方法，该方法包括将研磨剂，添加剂和水相加以形成浆料，其中添加剂的重量百分比大于磨料的重量百分数，并且 研磨剂和添加剂一起包含小于2重量％。 的浆料。

    Vibration damping in a chemical mechanical polishing system
    85.
    发明授权
    Vibration damping in a chemical mechanical polishing system 有权
    化学机械抛光系统中的振动阻尼

    公开(公告)号：US07014545B2

    公开(公告)日：2006-03-21

    申请号：US10754997

    申请日：2004-01-10

    申请人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

    发明人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

    IPC分类号： B24B7/00

    CPC分类号： B24B37/30 ,  B24B37/12 ,  B24B37/32 ,  B24B41/007

    摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

    摘要翻译： 用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。 振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

    Vibration damping in a chemical mechanical polishing system
    88.
    发明授权
    Vibration damping in a chemical mechanical polishing system 有权
    化学机械抛光系统中的振动阻尼

    公开(公告)号：US06676497B1

    公开(公告)日：2004-01-13

    申请号：US09658417

    申请日：2000-09-08

    申请人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

    发明人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

    IPC分类号： B24B700

    CPC分类号： B24B37/30 ,  B24B37/12 ,  B24B37/32 ,  B24B41/007

    摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

    摘要翻译： 用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。 振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

    Chemical mechanical polishing with friction-based control
    89.
    发明授权
    Chemical mechanical polishing with friction-based control 失效
    化学机械抛光以摩擦为主的控制

    公开(公告)号：US06623334B1

    公开(公告)日：2003-09-23

    申请号：US09562801

    申请日：2000-05-02

    申请人： Manoocher Birang ,  Shijian Li

    发明人： Manoocher Birang ,  Shijian Li

    IPC分类号： B24B4916

    CPC分类号： B24B37/005 ,  B24B49/006 ,  B24B49/16

    摘要： A chemical mechanical polishing apparatus has a polishing surface, a carrier head to press a substrate against the polishing surface with a controllable pressure, a motor to generate relative motion between the polishing surface and the carrier head at a velocity, and a controller. The controller is configured to vary at least one of the pressure and velocity in response to a signal that depends on the friction between the substrate and the polishing surface to maintain a constant torque, frictional force, or coefficient of friction.

    摘要翻译： 化学机械抛光装置具有抛光面，以可控制的压力将衬底压靠抛光表面的载体头，以一定速度在抛光表面和载体头之间产生相对运动的电动机和控制器。 控制器被配置为响应于取决于基板和抛光表面之间的摩擦的信号来改变压力和速度中的至少一个，以保持恒定的扭矩，摩擦力或摩擦系数。

    Selective damascene chemical mechanical polishing
    90.
    发明授权
    Selective damascene chemical mechanical polishing 失效
    选择性镶嵌化学机械抛光

    公开(公告)号：US06261157B1

    公开(公告)日：2001-07-17

    申请号：US09318225

    申请日：1999-05-25

    申请人： Rajeev Bajaj ,  Fritz C. Redeker ,  John M. White ,  Shijian Li ,  Yutao Ma

    发明人： Rajeev Bajaj ,  Fritz C. Redeker ,  John M. White ,  Shijian Li ,  Yutao Ma

    IPC分类号： B24B722

    CPC分类号： B24B37/345 ,  B24B27/0023 ,  H01L21/02074 ,  H01L21/3212

    摘要： A selective Damascene chemical mechanical polishing (CMP) technique is used to planarize a semiconductor device to remove surface topography. The semiconductor device includes a semiconductor layer formed on a substrate, an insulating layer formed over the semiconductor layer and patterned to expose a portion of the semiconductor layer, a barrier layer formed over the insulating layer and the exposed portion of the semiconductor layer, and an electrically conductive layer formed over the barrier layer. The semiconductor device is pressed against a first rotating polishing pad that has no embedded abrasive particles to remove a portion of the conductive layer that overlies both the barrier layer and the insulating layer. The semiconductor device is then pressed against a second rotating polishing pad that has embedded abrasive particles to expose a portion of the barrier layer that overlies the insulating layer. The device is then pressed against a third rotating polishing pad that has no embedded abrasive particles to remove the portion of the barrier layer that overlies the insulating layer.

    摘要翻译： 使用选择性的大马士革化学机械抛光（CMP）技术来平面化半导体器件以去除表面形貌。 半导体器件包括形成在衬底上的半导体层，形成在半导体层上并被图案化以暴露半导体层的一部分的绝缘层，形成在绝缘层上的阻挡层和半导体层的暴露部分， 形成在阻挡层上的导电层。 半导体器件被压在没有嵌入的磨料颗粒的第一旋转抛光垫上，以去除覆盖阻挡层和绝缘层两者的导电层的一部分。 然后将半导体器件压在具有嵌入的磨料颗粒的第二旋转抛光垫上，以暴露位于绝缘层上的阻挡层的一部分。 然后将装置压在没有嵌入的磨料颗粒的第三旋转抛光垫上，以去除覆盖在绝缘层上的阻挡层的部分。