公开(公告)号：US08118990B2

公开(公告)日：2012-02-21

申请号：US11431261

申请日：2006-05-10

申请人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

发明人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

IPC分类号： C25D3/56

CPC分类号： C25D3/562 ,  C25D5/18 ,  G11B5/3163 ,  H01F41/26

摘要： A process is described for the fabrication, through electrodeposition, of FexCoyNiz (x=60-71, y=25-35, z=0-5) films that have, in their as-deposited form, a saturation magnetization of at least 24 kG and a coercivity of less than 0.3 Oe. A key feature is the addition of aryl sulfinates to the plating bath along with a suitable seed layer.

摘要翻译： 描述了通过电沉积制造FexCoyNiz（x = 60-71，y = 25-35，z = 0-5）膜的方法，其具有以其沉积形式的至少24个饱和磁化强度 kG，矫顽力小于0.3 Oe。 一个关键的特征是在适当的种子层的同时向镀浴中加入芳基亚硫酸盐。

公开(公告)号：US07898773B2

公开(公告)日：2011-03-01

申请号：US11345892

申请日：2006-02-02

申请人： Cherng-Chyi Han ,  Min Li ,  Fenglin Liu ,  Jiun-Ting Lee

发明人： Cherng-Chyi Han ,  Min Li ,  Fenglin Liu ,  Jiun-Ting Lee

IPC分类号： G11B5/127

CPC分类号： G11B5/3163 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a separated pair of side shields and shielded from above by an upper shield. The side shields are formed by a RIE process using specific gases applied to a shield layer through a masking layer formed of material that has a slower etch rate than the shield material. A masking layer of Ta, Ru/Ta, TaN or Ti, formed on a shield layer of NiFe and using RIE gases of CH3OH, CO or NH3 or their combinations, produces the desired result. The differential in etch rates maintains the opening dimension within the mask and allows the formation of a wedge-shaped trench within the shield layer that separates the layer into two shields. The pole tip is then plated within the trench and, being aligned by the trench, acquires the wedge-shaped cross-section of the trench. An upper shield is then formed above the side shields and pole.

摘要翻译： 垂直磁记录（PMR）头被制造成具有通过分离的一对侧屏蔽横向屏蔽的极尖并且被上屏蔽从上面屏蔽。 侧面屏蔽是通过RIE工艺形成的，其使用通过掩模层施加到屏蔽层上的特定气体，该屏蔽层由具有比屏蔽材料更慢的蚀刻速率的材料形成。 形成在NiFe的屏蔽层上并使用CH 3 OH，CO或NH 3的RIE气体或其组合的Ta，Ru / Ta，TaN或Ti的掩蔽层产生期望的结果。 蚀刻速率的差异保持了掩模内的开口尺寸，并且允许在屏蔽层内形成将该层分成两个屏蔽层的楔形沟槽。 然后将磁极尖端电镀在沟槽内，并且通过沟槽对准，获得沟槽的楔形横截面。 然后在侧屏和极上方形成上屏蔽。

公开(公告)号：US07657992B2

公开(公告)日：2010-02-09

申请号：US12001429

申请日：2007-12-11

申请人： Cherng-Chyi Han ,  Kenichi Takano

发明人： Cherng-Chyi Han ,  Kenichi Takano

IPC分类号： G11B5/11 ,  G11B5/17

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062

摘要： A method of making a perpendicular magnetic recording (PMR) head with single or double coil layers and with a small write shield stitched onto a main write shield. The stitched shield allows the main write pole to produce a vertical write field with sharp vertical gradients that is reduced on both sides of the write pole so that adjacent track erasures are eliminated. From a fabrication point of view, both the main pole and the stitched shield are defined and formed using a single photolithographic process, a trim mask and CMP lapping process so that the main shield can be stitched onto a self-aligned main pole and stitched shield.

摘要翻译： 一种制造具有单线圈或双线圈层的垂直磁记录（PMR）头和缝合在主写屏蔽上的小写保护层的方法。 拼接屏蔽允许主写柱产生垂直写入场，其尖锐的垂直梯度在写入极的两侧减小，从而消除相邻的轨迹擦除。 从制造的角度来看，使用单一光刻工艺，修剪掩模和CMP研磨工艺来限定和形成主极和缝合屏蔽物，使得主屏蔽可以缝合到自对准的主极和缝合屏蔽 。

公开(公告)号：US07646568B2

公开(公告)日：2010-01-12

申请号：US11317598

申请日：2005-12-23

申请人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Yu-Hsia Chen ,  Min Li ,  Cherng-Chyi Han

发明人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Yu-Hsia Chen ,  Min Li ,  Cherng-Chyi Han

IPC分类号： G11B5/127

CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  Y10T29/49021

摘要： Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.

摘要翻译： 已经通过用Ta上的Ru的双层代替常规种子层（通常为Ta）来制造改进的磁性器件。 虽然Ru和Ta层都是超薄的（5到20埃之间），但保留种子和AFM层之间良好的交换偏差（约为70埃的IrMn）。 这种安排有助于最小的屏蔽间隔，并在CPP，CCP-CPP或TMR配置中提供出色的性能。

公开(公告)号：US20090116145A1

公开(公告)日：2009-05-07

申请号：US11982597

申请日：2007-11-02

申请人： Liejie Guan ,  Joe Smyth ,  Moris Dovek ,  Yoshitaka Sasaki ,  Cherng-Chyi Han

发明人： Liejie Guan ,  Joe Smyth ,  Moris Dovek ,  Yoshitaka Sasaki ,  Cherng-Chyi Han

IPC分类号： G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/23 ,  G11B5/3163

摘要： A PMR writer with a tapered main pole layer and tapered non-magnetic top-shaping layer is disclosed that minimizes trailing shield saturation. A second non-magnetic top shaping layer may be employed to reduce the effective TH size while the bulk of the trailing shield is thicker to allow a larger process window for back end processing. A sloped surface with one end at the ABS and a second end 0.05 to 0.3 microns from the ABS is formed at a 10 to 80 degree angle to the ABS and includes a sloped surface on the upper portion of the main pole layer and on the non-magnetic top shaping layer. An end is formed on the second non-magnetic top shaping layer at the second end of the sloped surface followed by forming a conformal write gap layer and then depositing the trailing shield on the write gap layer and along the ABS.

摘要翻译： 公开了一种具有锥形主极层和锥形非磁性顶部成形层的PMR写入器，其使拖尾屏蔽饱和度最小化。 可以采用第二非磁性顶部成形层来减小有效的TH尺寸，同时尾部屏蔽的大部分较厚以允许用于后端处理的较大的工艺窗口。 在ABS处具有一端的倾斜表面和距离ABS的0.05至0.3微米的第二端与ABS形成10至80度的角度，并且包括在主极层的上部上的非倾斜表面， 磁顶成型层。 在倾斜表面的第二端处在第二非磁性顶部成形层上形成端部，随后形成共形写入间隙层，然后将后部屏蔽层沉积在写入间隙层上并沿着ABS。

公开(公告)号：US20090009907A1

公开(公告)日：2009-01-08

申请号：US11825034

申请日：2007-07-03

申请人： Kunliang Zhang ,  Min Zheng ,  Min Li ,  Chen-Jung Chien ,  Cherng-Chyi Han

发明人： Kunliang Zhang ,  Min Zheng ,  Min Li ,  Chen-Jung Chien ,  Cherng-Chyi Han

IPC分类号： G11B5/127 ,  G11B5/147

CPC分类号： G11B5/3116 ,  G11B5/1278

摘要： A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).

摘要翻译： 公开了一种层叠主极层，其中使用非AFC方案来破坏相邻的高力矩层之间的磁耦合，并且在保持高磁矩的同时降低硬轴方向的剩磁，并实现Hch，Hce和 Hk。 由Hf，Zr，Ta，Al，Mg，Zn或Si中的一种或多种的氧化物，氮化物或氧氮化物形成的厚度为3〜20埃的无定形材料层插入相邻的高强度叠层之间。 层叠结构还包括在每个堆叠内的每个高力矩层下面的对准层。 在一个实施例中，Ru耦合层插入每个堆叠中的两个高矩层之间以引入AFC方案。 使用最上层的Ru层作为CMP停止层。 可以采用后退火工艺来进一步降低各向异性场（Hk）。

公开(公告)号：US20080094759A1

公开(公告)日：2008-04-24

申请号：US12001429

申请日：2007-12-11

申请人： Cherng-Chyi Han ,  Kenichi Takano

发明人： Cherng-Chyi Han ,  Kenichi Takano

IPC分类号： G11B5/10

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062

摘要： A method of making a perpendicular magnetic recording (PMR) head with single or double coil layers and with a small write shield stitched onto a main write shield. The stitched shield allows the main write pole to produce a vertical write field with sharp vertical gradients that is reduced on both sides of the write pole so that adjacent track erasures are eliminated. From a fabrication point of view, both the main pole and the stitched shield are defined and formed using a single photolithographic process, a trim mask and CMP lapping process so that the main shield can be stitched onto a self-aligned main pole and stitched shield.

摘要翻译： 一种制造具有单线圈或双线圈层的垂直磁记录（PMR）头和缝合在主写屏蔽上的小写保护层的方法。 拼接屏蔽允许主写柱产生垂直写入场，其尖锐的垂直梯度在写入极的两侧减小，从而消除相邻的轨迹擦除。 从制造的角度来看，使用单一光刻工艺，修剪掩模和CMP研磨工艺来限定和形成主极和缝合屏蔽物，使得主屏蔽可以缝合到自对准的主极和缝合屏蔽 。

公开(公告)号：US20070261967A1

公开(公告)日：2007-11-15

申请号：US11431261

申请日：2006-05-10

申请人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

发明人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

IPC分类号： C25D3/56

CPC分类号： C25D3/562 ,  C25D5/18 ,  G11B5/3163 ,  H01F41/26

摘要： A process is described for the fabrication, through electrodeposition, of FexCoyNiz (x=60-71, y=25-35, z=0-5) films that have, in their as-deposited form, a saturation magnetization of at least 24 kG and a coercivity of less than 0.3 Oe. A key feature is the addition of aryl sulfinates to the plating bath along with a suitable seed layer.

摘要翻译： 描述了通过电沉积制造Fe x Sb x Ni x Z x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x（x = 35，z = 0-5）具有其沉积形式的至少24kG的饱和磁化强度和小于0.3Oe的矫顽力的膜。 一个关键的特征是在适当的种子层的同时向镀浴中加入芳基亚硫酸盐。

公开(公告)号：US20070080381A1

公开(公告)日：2007-04-12

申请号：US11248965

申请日：2005-10-12

申请人： Chen-Jung Chien ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

发明人： Chen-Jung Chien ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

IPC分类号： H01L29/94

CPC分类号： H01L43/12 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/32 ,  H01L43/08

摘要： MTJ devices commonly degrade when subjected to the heat treatments required by subsequent further processing. This problem has been overcome by protecting the MTJ's sidewalls with a two layer laminate. The first layer is laid down under oxygen-free conditions, no attempt being made to replace any oxygen that is lost during the deposition. This is followed immediately by the deposition of the second layer (usually, but not mandatorily, of the same material as the first layer) in the presence of some oxygen.

摘要翻译： 当经过后续进一步处理所需的热处理时，MTJ装置通常会降解。 通过用双层层压板保护MTJ的侧壁已经克服了这个问题。 第一层被放置在无氧条件下，没有试图取代沉积过程中损失的任何氧气。 这是在存在一些氧气的情况下立即通过沉积第二层（通常但不强制地与第一层相同的材料）沉积。

公开(公告)号：US5684658A

公开(公告)日：1997-11-04

申请号：US727264

申请日：1996-10-07

申请人： Xizeng Shi ,  Yimin Guo ,  Kochan Ju ,  Cherng-Chyi Han ,  Yimin Hsu ,  Jei-Wei Chang

发明人： Xizeng Shi ,  Yimin Guo ,  Kochan Ju ,  Cherng-Chyi Han ,  Yimin Hsu ,  Jei-Wei Chang

IPC分类号： G11B5/012 ,  G11B5/39 ,  G11B5/48

CPC分类号： G11B5/3954 ,  G11B5/012 ,  G11B5/3967 ,  G11B5/488

摘要： A method for forming a dual stripe magnetoresistive (DSMR) sensor element, and the dual stripe magnetoresistive (DSMR) sensor element formed through the method. To practice the method, there is formed upon a substrate a first magnetoresistive (MR) layer, where the first magnetoresistive (MR) layer has a first sensor region longitudinally magnetically biased in a first longitudinal bias direction through a patterned first longitudinal magnetic biasing layer. There is then formed a second magnetoresistive (MR) layer parallel with and separated from the first magnetoresistive (MR) layer by an insulator layer. The second magnetoresistive (MR) layer has a second sensor region longitudinally magnetically biased in a second longitudinal bias direction through a patterned second longitudinal magnetic biasing layer. The first longitudinal bias direction and the second longitudinal bias direction are substantially parallel. In addition, the first sensor region and the second sensor region are physically offset. Finally, the first magnetoresistive (MR) layer is electromagnetically biased with a first bias current in a first bias current direction and the second magnetoresistive (MR) layer is electromagnetically biased with a second bias current in a second bias current direction, where the first bias current direction and the second bias current direction are substantially parallel.

摘要翻译： 一种用于形成双条磁阻（DSMR）传感器元件的方法和通过该方法形成的双条带磁阻（DSMR）传感器元件。 为了实施该方法，在衬底上形成第一磁阻（MR）层，其中第一磁阻（MR）层具有通过图案化的第一纵向磁偏置层在第一纵向偏置方向上纵向磁偏置的第一传感器区。 然后通过绝缘体层形成与第一磁阻（MR）层平行并与第一磁阻（MR）层分离的第二磁阻（MR）层。 第二磁阻（MR）层具有通过图案化的第二纵向磁偏置层在第二纵向偏置方向上纵向磁偏置的第二传感器区。 第一纵向偏置方向和第二纵向偏置方向基本平行。 此外，第一传感器区域和第二传感器区域被物理偏移。 最后，第一磁阻（MR）层在第一偏置电流方向上以第一偏置电流进行电磁偏置，第二磁阻（MR）层在第二偏置电流方向上以第二偏置电流进行电磁偏置，其中第一偏置 电流方向和第二偏置电流方向基本上平行。