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公开(公告)号：US07816998B2
公开(公告)日：2010-10-19
申请号：US12000654
申请日：2007-12-14
申请人： Motoaki Hara , Tokihiro Nishihara , Masanori Ueda , Go Endo
发明人： Motoaki Hara , Tokihiro Nishihara , Masanori Ueda , Go Endo
CPC分类号： H03H9/174 , H03H3/02 , H03H9/02118 , H03H9/173
摘要： A film bulk acoustic resonator includes a lower electrode that is formed on a void of a substrate or is formed so that a void is formed between the lower electrode and the substrate, a piezoelectric film that is formed on the lower electrode, an upper electrode that is formed on the piezoelectric film so as to have a resonance region facing the lower electrode through the piezoelectric film, a support region that is provided around the resonance region, has a width of 0.35 times to 0.65 times a wavelength of a wave propagating in a lateral direction, and transmits the wave passes, and an adjacent region that is provided around the support region and blocks the wave.
摘要翻译： 薄膜体声波谐振器包括形成在基板的空隙上或形成为在下电极和基板之间形成空隙的下电极，形成在下电极上的压电膜，上电极 形成在压电膜上，以便具有通过压电膜面向下电极的共振区域，设置在谐振区域周围的支撑区域的宽度是在波长传播的波长的波长的0.35倍至0.65倍 横向传播，并且传递波通，以及设置在支撑区域周围并阻挡波的相邻区域。
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公开(公告)号：US20080143215A1
公开(公告)日：2008-06-19
申请号：US11976608
申请日：2007-10-25
申请人： Motoaki Hara , Tokihiro Nishihara , Masanori Ueda , Go Endo
发明人： Motoaki Hara , Tokihiro Nishihara , Masanori Ueda , Go Endo
IPC分类号： H01L41/047 , H03H9/15 , H03H9/54
摘要： A piezoelectric thin-film resonator includes: a lower electrode supported by a substrate, a space being defined below the lower electrode; a piezoelectric film provided on the lower electrode and the substrate; and an upper electrode provided on the piezoelectric film so as to form a resonance portion in which the upper electrode faces the lower electrode across the piezoelectric film. At least one of the lower electrode and the upper electrode has an interconnection portion used to extract a signal from the resonance portion and located above the space. The at least one of the lower electrode and the upper electrode has a first mass per unit area in which the at least one of the lower electrode and the upper electrode contacts the piezoelectric film and a second mass per unit area in the resonance portion. The first mass per unit area is smaller than the second mass per unit area.
摘要翻译： 压电薄膜谐振器包括：由基板支撑的下电极，在下电极下方限定空间; 设置在下电极和基板上的压电膜; 以及设置在压电膜上的上电极，以形成谐振部分，其中上电极面向下电极穿过压电膜。 下电极和上电极中的至少一个具有用于从谐振部分提取信号并位于空间上方的互连部分。 下电极和上电极中的至少一个具有每单位面积的第一质量，其中下电极和上电极中的至少一个与压电膜接触，并且在谐振部分中每单位面积具有第二质量。 每单位面积的第一个质量小于每单位面积的第二个质量。
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83.发明授权Thin-film piezoelectric resonator, band-pass filter and method of making thin-film piezoelectric resonator 有权薄膜压电谐振器，带通滤波器和制造薄膜压电谐振器的方法公开(公告)号：US06734763B2
公开(公告)日：2004-05-11
申请号：US10117219
申请日：2002-04-08
IPC分类号： H03H900
摘要： A thin-film piezo-resonator includes a silicon substrate and a resonator assembly. The substrate is formed with a cavity or through-hole which is opened in the upper and the lower surfaces of the substrate. The resonator assembly, disposed at a location corresponding to the cavity, is composed of a first electrode contacting the upper surface of the substrate, a piezoelectric layer formed on the first electrode and a second electrode formed on the piezoelectric layer. The cavity has a side surface extending in a substantially perpendicular direction to the first surface.
摘要翻译： 薄膜压电谐振器包括硅衬底和谐振器组件。 衬底形成有在衬底的上表面和下表面中打开的空腔或通孔。 设置在与空腔对应的位置处的谐振器组件由与基板的上表面接触的第一电极，形成在第一电极上的压电层和形成在压电层上的第二电极组成。 空腔具有在与第一表面大致垂直的方向上延伸的侧表面。
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84.发明授权Filter element, and filter device, duplexer, and high-frequency circuit each including said filter element 有权滤波器元件，滤波器装置，双工器和高频电路，每个包括所述滤波元件公开(公告)号：US07271684B2
公开(公告)日：2007-09-18
申请号：US10717487
申请日：2003-11-21
CPC分类号： H03H9/564 , H03H9/0095 , H03H9/1014 , H03H9/568
摘要： A filter element includes resonators that are arranged in series arms and parallel arms in a circuit. In this filter element, at least one of the series-arm resonators includes a plurality of single-terminal pair piezoelectric thin-film resonators connected in parallel.
摘要翻译： 滤波器元件包括在电路中以串联臂和并联臂布置的谐振器。 在该滤波元件中，串联臂谐振器中的至少一个包括并联连接的多个单端对的压电薄膜谐振器。
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公开(公告)号：US07145417B2
公开(公告)日：2006-12-05
申请号：US10397172
申请日：2003-03-27
CPC分类号： H03H9/1014 , H03H9/0523 , H03H9/564 , H03H9/568 , H03H9/6483
摘要： A filter chip includes multiple series-arm resonators arranged in series arms of a ladder arrangement, and multiple parallel-arm resonators arranged in parallel arms of the ladder arrangement. A common line is connected to first electrodes of at least two parallel-arm resonators among the multiple parallel-arm resonators. Second electrodes of said at least two parallel-arm resonators are connected to associated series-arm resonators among the multiple series-arm resonators.
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公开(公告)号：US07602101B2
公开(公告)日：2009-10-13
申请号：US11976608
申请日：2007-10-25
申请人： Motoaki Hara , Tokihiro Nishihara , Masanori Ueda , Go Endo
发明人： Motoaki Hara , Tokihiro Nishihara , Masanori Ueda , Go Endo
IPC分类号： H01L41/047
摘要： A piezoelectric thin-film resonator includes: a lower electrode supported by a substrate, a space being defined below the lower electrode; a piezoelectric film provided on the lower electrode and the substrate; and an upper electrode provided on the piezoelectric film so as to form a resonance portion in which the upper electrode faces the lower electrode across the piezoelectric film. At least one of the lower electrode and the upper electrode has an interconnection portion used to extract a signal from the resonance portion and located above the space. The at least one of the lower electrode and the upper electrode has a first mass per unit area in which the at least one of the lower electrode and the upper electrode contacts the piezoelectric film and a second mass per unit area in the resonance portion. The first mass per unit area is smaller than the second mass per unit area.
摘要翻译： 压电薄膜谐振器包括：由基板支撑的下电极，在下电极下方限定空间; 设置在下电极和基板上的压电膜; 以及设置在压电膜上的上电极，以形成谐振部分，其中上电极面向下电极穿过压电膜。 下电极和上电极中的至少一个具有用于从谐振部分提取信号并位于空间上方的互连部分。 下电极和上电极中的至少一个具有每单位面积的第一质量，其中下电极和上电极中的至少一个与压电膜接触，并且在谐振部分中每单位面积具有第二质量。 每单位面积的第一个质量小于每单位面积的第二个质量。
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公开(公告)号：US20080150653A1
公开(公告)日：2008-06-26
申请号：US12000654
申请日：2007-12-14
申请人： Motoaki Hara , Tokihiro Nishihara , Masanori Ueda , Go Endo
发明人： Motoaki Hara , Tokihiro Nishihara , Masanori Ueda , Go Endo
IPC分类号： H03H9/54 , H01L41/053 , H01L41/047
CPC分类号： H03H9/174 , H03H3/02 , H03H9/02118 , H03H9/173
摘要： A film bulk acoustic resonator includes a lower electrode that is formed on a void of a substrate or is formed so that a void is formed between the lower electrode and the substrate, a piezoelectric film that is formed on the lower electrode, an upper electrode that is formed on the piezoelectric film so as to have a resonance region facing the lower electrode through the piezoelectric film, a support region that is provided around the resonance region, has a width of 0.35 times to 0.65 times a wavelength of a wave propagating in a lateral direction, and transmits the wave passes, and an adjacent region that is provided around the support region and blocks the wave.
摘要翻译： 薄膜体声波谐振器包括形成在基板的空隙上或形成为在下电极和基板之间形成空隙的下电极，形成在下电极上的压电膜，上电极 形成在压电膜上，以便具有通过压电膜面向下电极的共振区域，设置在谐振区域周围的支撑区域的宽度是在波长传播的波长的波长的0.35倍至0.65倍 横向传播，并且传递波通，以及设置在支撑区域周围并阻挡波的相邻区域。
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公开(公告)号：US07323953B2
公开(公告)日：2008-01-29
申请号：US10926329
申请日：2004-08-26
IPC分类号： H03H9/00
CPC分类号： H03H9/174 , H03H3/02 , H03H9/02133 , H03H9/131 , H03H9/132 , H03H9/562 , H03H9/564 , H03H9/568 , H03H2003/023
摘要： A film bulk acoustic resonator includes: a piezoelectric thin film that is formed on a principal surface of a substrate; and a lower electrode and an upper electrode that are arranged to sandwich the piezoelectric thin film. In this film bulk acoustic resonator, the piezoelectric thin film is made of aluminum nitride, and at least one of the lower electrode and the upper electrode contains a ruthenium or ruthenium-alloy layer.
摘要翻译： 膜体声波谐振器包括：形成在基板的主表面上的压电薄膜; 以及布置成夹持压电薄膜的下电极和上电极。 在该膜体声波谐振器中，压电薄膜由氮化铝制成，下电极和上电极中的至少一方含有钌或钌合金层。
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公开(公告)号：US20050046519A1
公开(公告)日：2005-03-03
申请号：US10926329
申请日：2004-08-26
IPC分类号： H01L41/187 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/319 , H03H3/02 , H03H3/04 , H03H9/13 , H03H9/17 , H03H9/56 , H03H9/58
CPC分类号： H03H9/174 , H03H3/02 , H03H9/02133 , H03H9/131 , H03H9/132 , H03H9/562 , H03H9/564 , H03H9/568 , H03H2003/023
摘要： A film bulk acoustic resonator includes: a piezoelectric thin film that is formed on a principal surface of a substrate; and a lower electrode and an upper electrode that are arranged to sandwich the piezoelectric thin film. In this film bulk acoustic resonator, the piezoelectric thin film is made of aluminum nitride, and at least one of the lower electrode and the upper electrode contains a ruthenium or ruthenium-alloy layer.
摘要翻译： 膜体声波谐振器包括：形成在基板的主表面上的压电薄膜; 以及布置成夹持压电薄膜的下电极和上电极。 在该膜体声波谐振器中，压电薄膜由氮化铝制成，下电极和上电极中的至少一方含有钌或钌合金层。
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公开(公告)号：US09035536B2
公开(公告)日：2015-05-19
申请号：US13563505
申请日：2012-07-31
CPC分类号： H03H3/04 , H03H9/171 , H03H2003/021 , H03H2003/023 , H03H2003/025 , H03H2003/0407 , Y10T29/42
摘要： A piezoelectric thin-film resonator includes: a lower electrode provided on a substrate; a piezoelectric film that is provided on the lower electrode and includes at least two layers; an upper electrode that is provided on the piezoelectric film and has a region sandwiching the piezoelectric film with the lower electrode and facing the lower electrode; and an insulating film that is provided in a region in which the lower electrode and the upper electrode face each other and between each of the at least two layers, wherein an upper face of the insulating film is flatter than a lower face of the insulating film.
摘要翻译： 压电薄膜谐振器包括：设置在基板上的下电极; 压电膜，其设置在所述下电极上并且包括至少两层; 上部电极，其设置在所述压电膜上，并且具有将所述压电膜与所述下部电极夹在中间且与所述下部电极相对的区域; 以及绝缘膜，其设置在所述下电极和所述上电极彼此面对并且在所述至少两层中的每一个之间的区域中，其中所述绝缘膜的上表面比所述绝缘膜的下表面平坦 。
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