Communication unit
    81.
    发明授权

    公开(公告)号:US10256848B2

    公开(公告)日:2019-04-09

    申请号:US15490021

    申请日:2017-04-18

    Abstract: A communication unit includes the following elements. A first transmit circuit outputs a first signal or a second signal from a first input signal. A first amplifier amplifies the first signal and outputs a first amplified signal. A first signal generating circuit generates a third signal having a frequency higher than a frequency of the second signal, based on the second signal and a first reference signal. A first filter circuit receives the third signal and allows one of a frequency component representing a sum of the frequency of the second signal and a frequency of the first reference signal and a frequency component representing a difference therebetween to pass through the first filter circuit and attenuates the other one of the frequency components. A second amplifier amplifies the third signal output from the first filter circuit and outputs a second amplified signal.

    Power amplifier
    82.
    发明授权

    公开(公告)号:US10236828B2

    公开(公告)日:2019-03-19

    申请号:US15684258

    申请日:2017-08-23

    Abstract: A power amplifier has improved power added efficiency at high output power. The power amplifier includes: a first transistor for amplifying an input signal input to the base thereof and outputting the amplified signal from the collector thereof; a second transistor with power-supply voltage applied to the collector thereof to supply bias voltage or bias current from the emitter thereof to the base of the first transistor; a third transistor whose collector is connected to the collector of the first transistor to amplify the input signal input to the base thereof and output the amplified signal from a collector thereof; a fourth transistor whose base and collector are connected to supply bias from the emitter thereof to the base of the third transistor; and a first resistor with bias control voltage applied to one end thereof and the other end connected to the bases of the second and fourth transistors.

    SEMICONDUCTOR DEVICE
    83.
    发明申请

    公开(公告)号:US20190068142A1

    公开(公告)日:2019-02-28

    申请号:US16112938

    申请日:2018-08-27

    Abstract: A semiconductor device includes the following elements. A chip has a main surface substantially parallel with a plane defined by first and second directions intersecting with each other. A power amplifier amplifies an input signal and outputs an amplified signal from plural output terminals. First and second filter circuits attenuate harmonics of the amplified signal. The first filter circuit includes a first capacitor connected between the plural output terminals and a ground. The second filter circuit includes a second capacitor connected between the plural output terminals and a ground. On the main surface of the chip, the plural output terminals are disposed side by side in the first direction, and the first capacitor is disposed on a side in the first direction with respect to the plural output terminals, while the second capacitor is disposed on a side opposite the first direction with respect to the plural output terminals.

    Power amplifier circuit
    84.
    发明授权

    公开(公告)号:US10135395B2

    公开(公告)日:2018-11-20

    申请号:US15821054

    申请日:2017-11-22

    Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.

    Power amplification module
    86.
    发明授权

    公开(公告)号:US10069523B2

    公开(公告)日:2018-09-04

    申请号:US15837499

    申请日:2017-12-11

    Abstract: A power amplification module includes a first input terminal arranged to receive a first transmission signal in a first frequency band, a second input terminal arranged to receive a second transmission signal in a second frequency band higher than the first frequency band, a first amplification circuit that amplifies the first transmission signal, a second amplification circuit that amplifies the second transmission signal, a first filter circuit located between the first input terminal and the first amplification circuit, and a second filter circuit located between the second input terminal and the second amplification circuit. The first filter circuit is a low-pass filter that allows the first frequency band to pass therethrough and that attenuates a harmonic of the first transmission signal and the second transmission signal. The second filter circuit is a high-pass filter that allows the second frequency band to pass therethrough and that attenuates the first transmission signal.

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