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    Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor
    83.
    发明授权
    Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor 失效
    具有导电薄膜的半导体装置及其制造装置

    公开(公告)号：US06468845B1

    公开(公告)日：2002-10-22

    申请号：US09536642

    申请日：2000-03-28

    申请人： Takashi Nakajima ,  Hideo Miura ,  Hiroyuki Ohta ,  Noriaki Okamoto

    发明人： Takashi Nakajima ,  Hideo Miura ,  Hiroyuki Ohta ,  Noriaki Okamoto

    IPC分类号： H01L2184

    CPC分类号： H01L21/28097 ,  H01L21/28035 ,  H01L21/28518 ,  H01L21/28525 ,  H01L21/32053 ,  H01L21/76838 ,  H01L21/76877 ,  H01L21/823437 ,  H01L23/485 ,  H01L23/53257 ,  H01L23/53271 ,  H01L28/40 ,  H01L29/4925 ,  H01L29/4975 ,  H01L2924/0002 ,  Y10T117/10 ,  Y10T117/1004 ,  H01L2924/00

    摘要： In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.

    摘要翻译： 例如，通过氧化硅膜5在半导体衬底4上的氧化硅膜5上形成电极2时，栅电极2被构成为多个多晶硅层6的层叠结构。栅极部分 通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶（再结晶）的方法形成电极2。 在这种情况下，非晶层的沉积被分开多次进行，使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度 在每个非晶层的沉积过程完成之后，非晶材料结晶，重复沉积非晶层的过程和结晶非晶材料的过程，由此多晶层6的层压结构具有必要的 获得膜厚度。 利用上述结构，可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生，层中的裂纹等，并且可以获得 通过多晶材料的层叠，具有所需膜厚度的小晶粒尺寸的多晶层。

    Video camera having rotatable viewfinder
    85.
    发明授权
    Video camera having rotatable viewfinder 失效
    具有可旋转取景器的摄像机

    公开(公告)号：US4959729A

    公开(公告)日：1990-09-25

    申请号：US275889

    申请日：1988-11-25

    申请人： Hiroshi Fukuda ,  Hideo Miura ,  Masahiko Mizuno

    发明人： Hiroshi Fukuda ,  Hideo Miura ,  Masahiko Mizuno

    IPC分类号： H04N5/225

    CPC分类号： H04N5/2251

    摘要： A portable video camera of the type having a taking lens and an electronic video imaging device comprises a camera body incorporating the electronic video imaging device therein, a handgrip turnably mounted on one side wall of the camera body, and a view finder, electronic or optical, structurally integral with the handgrip for viewing an image of a subject therethrough. Being changeable in position according to camera angles, the action finder can be brought into alignment with an eye of the operator in any shooting angle.

    Method of manufacturing semiconductor device
    87.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08791027B2

    公开(公告)日：2014-07-29

    申请号：US12794606

    申请日：2010-06-04

    申请人： Naoyuki Kofuji ,  Hideo Miura

    发明人： Naoyuki Kofuji ,  Hideo Miura

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31138 ,  H01L21/0273

    摘要： A problem of a resist mask collapse due to a plasma process is solved. In a method of manufacturing a semiconductor device including steps of a plasma process to a sample having a mask made of an organic material, the plasma process includes a first step of a plasma process under a gas containing any of fluorine, oxygen, or nitrogen, or containing all of them, and a second step of the plasma process under a gas containing a rare gas without containing any of fluorine, oxygen, and nitrogen, and the first step and the second step are repeated.

    摘要翻译： 解决了由于等离子体处理引起的抗蚀剂掩模塌陷的问题。 在制造半导体器件的方法中，包括对具有由有机材料制成的掩模的样品进行等离子体处理的步骤，等离子体处理包括在含有氟，氧或氮的任何一种的气体下进行等离子体处理的第一步骤， 或包含它们的全部，以及在含有不含氟，氧和氮的任何一种的稀有气体的气体下的等离子体处理的第二步骤，并且重复第一步骤和第二步骤。

    Laser beam irradiation apparatus
    88.
    发明授权
    Laser beam irradiation apparatus 有权
    激光束照射装置

    公开(公告)号：US08378255B2

    公开(公告)日：2013-02-19

    申请号：US12734704

    申请日：2008-11-07

    申请人： Takahiro Nagashima ,  Hideo Miura

    发明人： Takahiro Nagashima ,  Hideo Miura

    IPC分类号： B23K26/00

    CPC分类号： G02B6/02 ,  B23K26/064 ,  B23K26/073 ,  B23K26/0736 ,  B23K26/24 ,  G02B6/14 ,  G02B6/4206 ,  G02B6/4296

    摘要： [Problems]A laser beam irradiation apparatus which can accurately perform a linear welding with a uniform width on an irradiation portion even if the overlap ratio is lowered is provided.[Means for Solving the Problems]A laser beam irradiation apparatus includes laser beam generation means for emitting a laser beam, an optical fiber for transmitting the laser beam incident on an input side face to an output side face, an incident optical unit for introducing the laser beam emitted from the laser beam generation means to the input side face of the optical fiber, and an emission optical unit for applying the laser beam emitted from the output side face of the optical fiber to an irradiation portion, wherein the core cross section of the optical fiber is formed to be rectangular, preferably oblong, throughout the optical fiber or in a range at a predetermined distance from the output side face, and the length of the range where the core cross section is rectangular is preferably set to 3 m or above.

    摘要翻译： [问题]提供即使重叠率降低也能够在照射部分上精确地进行均匀宽度的线性焊接的激光束照射装置。 解决问题的手段激光束照射装置包括用于发射激光束的激光束产生装置，将入射到输入侧面的激光束传输到输出侧面的光纤，用于引入激光束的入射光学单元 从激光束产生装置发射的激光束到光纤的输入侧面;以及发射光学单元，用于将从光纤的输出侧面发射的激光束施加到照射部分，其中，芯部横截面 光纤在整个光纤中形成为矩形，优选为长方形，或者距离输出侧面在预定距离的范围内，芯部截面为矩形的范围的长度优选设定为3μm， 以上。

    Semiconductor device and method for producing the same
    89.
    发明授权
    Semiconductor device and method for producing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US07701062B2

    公开(公告)日：2010-04-20

    申请号：US11834081

    申请日：2007-08-06

    申请人： Tomio Iwasaki ,  Hideo Miura

    发明人： Tomio Iwasaki ,  Hideo Miura

    IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

    CPC分类号： H01L23/53238 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53252 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided, is a reliable semiconductor device with a layered interconnect structure that may develop no trouble of voids and interconnect breakdowns, in which the layered interconnect structure comprises a conductor film and a neighboring film as so layered on a semiconductor substrate that the neighboring film is contacted with the conductor film. In the device, the materials for the conductor film and the neighboring film are so selected that the difference between the short side, ap, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the short side, an, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {|ap−an|/ap}×100=A (%) and the difference between the long side, bp, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the long side, bn, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {|bp−bn|/bp}×100=B (%) satisfy an inequality of {A+B×(ap/bp)}

    摘要翻译： 提供的是具有分层互连结构的可靠的半导体器件，其可以不产生空隙和互连故障的问题，其中分层互连结构包括导体膜和相邻的膜，如此分层在半导体衬底上，邻近膜被接触 与导体膜。 在该器件中，用于导体膜和相邻膜的材料被选择成使得构成具有导体膜的最小自由能和短边的平面的矩形单位电池的短边面ap之间的差， ，构成具有相邻膜的最小自由能的平面的矩形单元电池，矩形单位电池的长边，bp之间的差异为{| ap-an | / ap}×100 = A（％） 构成具有相邻膜的最小自由能的构成平面的矩形单位电池的导体膜和长边bn的最小自由能的平面{| bp-bn | / bp}×100 = B （％）满足{A + B×（ap / bp）} <13的不等式。 在此，导体膜的扩散被延迟。

    Optical device having connections with optical members through protective medium
    90.
    发明授权
    Optical device having connections with optical members through protective medium 有权
    光学装置通过保护介质与光学构件连接

    公开(公告)号：US07653275B2

    公开(公告)日：2010-01-26

    申请号：US11591560

    申请日：2006-11-02

    申请人： Shinichi Shimotsu ,  Shinichiro Sonoda ,  Hideo Miura

    发明人： Shinichi Shimotsu ,  Shinichiro Sonoda ,  Hideo Miura

    IPC分类号： G02B6/00 ,  G02B6/24 ,  G02B6/26

    CPC分类号： G02B6/262 ,  G02B6/32 ,  G02B6/421

    摘要： An optical device includes: a first optical member having a light-exit end at which light exits the first optical member; a second optical member having a light-entrance end which abuts the light-exit end through a protective medium and from which the light enters the second optical member; and the protective medium which is arranged between the light-exit end and the light-entrance end, and suppresses fixing together of the light-exit end and the light-entrance end. Specifically, the protective medium is transparent and arranged between the light-exit end and the light-entrance end, and is reusable even after the light-exit end and the light-entrance end are pressed together with a pressure of approximately 0.5 or 1 kgf and are then separated from each other.

    摘要翻译： 光学装置包括：具有光出射端的第一光学构件，光从该第一光学构件出射; 第二光学构件，其具有通过保护介质邻接所述光出射端的光入射端，并且所述光进入所述第二光学构件; 以及布置在光出射端和光入射端之间的保护介质，并且抑制光出射端和光入射端的固定在一起。 具体地说，保护介质是透明的并且设置在光出射端和光入射端之间，并且即使在光出射端和光入射端之间也以约0.5或1kgf的压力被压在一起 然后彼此分离。