公开(公告)号：US20180315779A1

公开(公告)日：2018-11-01

申请号：US16014367

申请日：2018-06-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Rihito WADA ,  Yoko CHIBA

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/1345 ,  G02F1/1339 ,  H01L29/786 ,  H01L29/66 ,  H01L29/417 ,  H01L29/24 ,  H01L29/04 ,  H01L51/52

Abstract: A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

公开(公告)号：US20180197994A1

公开(公告)日：2018-07-12

申请号：US15910395

申请日：2018-03-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Toshinari SASAKI

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/45 ,  H01L27/12 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F1/167 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.

公开(公告)号：US20180190834A1

公开(公告)日：2018-07-05

申请号：US15909165

申请日：2018-03-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L21/02 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/02565 ,  H01L29/247 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.

公开(公告)号：US20180114844A1

公开(公告)日：2018-04-26

申请号：US15841891

申请日：2017-12-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Daisuke KAWAE

IPC: H01L29/417 ,  H01L51/10 ,  H01L51/05 ,  H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L21/02

CPC classification number: H01L29/41733 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0508 ,  H01L51/0512 ,  H01L51/0545 ,  H01L51/105

Abstract: A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

公开(公告)号：US20170309754A1

公开(公告)日：2017-10-26

申请号：US15648943

申请日：2017-07-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L29/10

CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.

公开(公告)号：US20170243897A1

公开(公告)日：2017-08-24

申请号：US15428340

申请日：2017-02-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

IPC: H01L27/12 ,  H01L29/10 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/127 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/24 ,  H01L29/7869

Abstract: A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.

公开(公告)号：US20170186774A1

公开(公告)日：2017-06-29

申请号：US15460652

申请日：2017-03-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA

IPC: H01L27/12 ,  G02F1/1368 ,  G02F1/1343 ,  G02F1/1345

CPC classification number: H01L27/124 ,  G02F1/134309 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1255

Abstract: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transimitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

公开(公告)号：US20160155859A1

公开(公告)日：2016-06-02

申请号：US15017704

申请日：2016-02-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime KIMURA ,  Kengo AKIMOTO ,  Masashi TSUBUKU ,  Toshinari SASAKI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78693 ,  G09G3/3648 ,  G09G2300/0842 ,  H01L27/1225 ,  H01L29/78618

Abstract: A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.

Abstract translation: 一种显示装置，包括具有存储器的像素。 像素至少包括显示元件，电容器，反相器和开关。 开关由保持在电容器中的信号和从逆变器输出的信号控制，使得电压被提供给显示元件。 逆变器和开关可以由具有相同极性的晶体管构成。 可以使用透光材料形成包括在像素中的半导体层。 此外，可以使用透光导电层来形成栅电极，漏电极和电容器电极。 以这种方式使用透光材料形成像素，由此显示装置可以是包括具有存储器的像素的透射显示装置。

公开(公告)号：US20160079439A1

公开(公告)日：2016-03-17

申请号：US14947109

申请日：2015-11-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/02565 ,  H01L29/247 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.

公开(公告)号：US20150364513A1

公开(公告)日：2015-12-17

申请号：US14731954

申请日：2015-06-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hironobu TAKAHASHI ,  Yukinori SHIMA ,  Kengo AKIMOTO ,  Junichi KOEZUKA ,  Naoto KUSUMOTO

IPC: H01L27/146 ,  H01L29/786

CPC classification number: H01L27/14616 ,  H01L27/1225 ,  H01L27/14632 ,  H01L27/14663

Abstract: An imaging device with high imaging quality capable of being manufactured at low cost is provided. The imaging device includes a first transistor, a second transistor, a third transistor, a fourth transistor, a photodiode, and a capacitor. Each of the first to the fourth transistors includes a first gate electrode and a second gate electrode, and the second gate electrode of each of the first to the fourth transistors and one electrode of the capacitor are electrically connected to an anode electrode of the photodiode.

Abstract translation: 提供了能够以低成本制造的具有高成像质量的成像装置。 成像装置包括第一晶体管，第二晶体管，第三晶体管，第四晶体管，光电二极管和电容器。 第一至第四晶体管中的每一个包括第一栅电极和第二栅电极，第一至第四晶体管中的每一个的第二栅电极和电容器的一个电极与光电二极管的阳极电连接。