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    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    81.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开

    公开(公告)号：US20200066884A1

    公开(公告)日：2020-02-27

    申请号：US16671612

    申请日：2019-11-01

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Motomu KURATA ,  Masashi TSUBUKU

    IPC: H01L29/66 ,  H01L27/146 ,  H01L27/12 ,  H01L21/02 ,  H01L29/786

    Abstract: The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

    SEMICONDUCTOR DEVICE
    88.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150311291A1

    公开(公告)日：2015-10-29

    申请号：US14734029

    申请日：2015-06-09

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Masashi OOTA

    IPC: H01L29/24 ,  H01L29/786

    CPC classification number: H01L29/04 ,  H01L29/045 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/7869 ,  H01L29/78693

    Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.

    Abstract translation: 提供了包括氧化物半导体的高度可靠的半导体器件。 提供了一种半导体器件，包括氧化物半导体层，与氧化物半导体层接触的绝缘层，与氧化物半导体层重叠的栅极电极层，以及与氧化物半导体层电连接的源极电极层和漏极电极层 。 氧化物半导体层包括具有尺寸小于或等于10nm的晶体的第一区域和与其间设置有第一区域的绝缘层重叠的第二区域，并且其包括其c轴对准的晶体部分 与氧化物半导体层的表面的法线矢量平行的方向。

    SEMICONDUCTOR DEVICE
    89.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20150214382A1

    公开(公告)日：2015-07-30

    申请号：US14682356

    申请日：2015-04-09

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tatsuya HONDA ,  Masashi TSUBUKU ,  Yusuke NONAKA ,  Takashi SHIMAZU ,  Shunpei YAMAZAKI

    IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L29/51

    CPC classification number: H01L29/7869 ,  G02F1/133345 ,  G02F1/1337 ,  G02F1/13394 ,  G02F1/134309 ,  G02F2202/10 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/51 ,  H01L29/66969 ,  H01L29/78696

    Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

    Abstract translation: 半导体器件包括栅电极，栅极绝缘膜，其包括含有硅的氧化物并覆盖栅电极，设置为与栅极绝缘膜接触并与至少栅电极重叠的氧化物半导体膜，以及源极 电极和与氧化物半导体膜电连接的漏电极。 在氧化物半导体膜中，设置为与栅极绝缘膜接触并具有小于或等于5nm的厚度的第一区域具有低于或等于1.0at的硅浓度。 ％，除了第一区域之外的氧化物半导体膜中的区域的硅浓度比第一区域低。 至少第一区域包括晶体部分。

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