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89 条记录 (耗时 0.029 秒)

    Columnar non-volatile memory devices with auxiliary transistors and methods of operating the same
    83.
    发明授权
    Columnar non-volatile memory devices with auxiliary transistors and methods of operating the same 有权
    具有辅助晶体管的柱状非易失性存储器件及其操作方法

    公开(公告)号：US08064254B2

    公开(公告)日：2011-11-22

    申请号：US12493935

    申请日：2009-06-29

    申请人： Suk-pil Kim ,  Yoon-dong Park

    发明人： Suk-pil Kim ,  Yoon-dong Park

    IPC分类号： G11C11/34

    CPC分类号： H01L21/28273 ,  G11C16/10 ,  H01L21/28282 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/42328 ,  H01L29/42344 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7883 ,  H01L29/792 ,  H01L29/7926

    摘要： A non-volatile memory device includes at least one semiconductor column having a first sidewall and a second sidewall. The device also includes at least one gate electrode is disposed on the first sidewall and at least one control gate electrode disposed on the second sidewall. The device further includes at least one charge storage layer is disposed between the second sidewall and the at least one control gate electrode. The at least one gate electrode and the at least one control gate electrode may be disposed on opposite sides of the at least one semiconductor column such that they commonly control a channel region in the semiconductor column.

    摘要翻译： 非易失性存储器件包括至少一个具有第一侧壁和第二侧壁的半导体柱。 该器件还包括设置在第一侧壁上的至少一个栅电极和设置在第二侧壁上的至少一个控制栅电极。 该装置还包括至少一个电荷存储层设置在第二侧壁和至少一个控制栅电极之间。 至少一个栅电极和至少一个控制栅电极可以设置在至少一个半导体柱的相对侧上，使得它们共同地控制半导体柱中的沟道区。

    Reflection mask for EUV photolithography and method of fabricating the reflection mask
    88.
    发明申请
    Reflection mask for EUV photolithography and method of fabricating the reflection mask 有权
    用于EUV光刻的反射掩模和制造反射掩模的方法

    公开(公告)号：US20060281017A1

    公开(公告)日：2006-12-14

    申请号：US11441835

    申请日：2006-05-26

    申请人： Suk-pil Kim ,  I-hun Song ,  Young-Soo Park ,  Seung-hyuk Chang ,  Hoon Kim

    发明人： Suk-pil Kim ,  I-hun Song ,  Young-Soo Park ,  Seung-hyuk Chang ,  Hoon Kim

    IPC分类号： G21K5/00 ,  G03F1/00

    CPC分类号： G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24

    摘要： A reflection mask for extreme ultraviolet (EUV) photolithography and a method of fabricating the same, in which the reflection mask includes a substrate, a lower reflection layer formed in a multi-layer structure on the substrate and including a material reflecting EUV light, an upper reflection layer formed in a multi-layer structure on the lower reflection layer and reflecting EUV light, and a phase reversing layer formed between the lower reflection layer and the upper reflection layer in a certain pattern and causing destructive interference between reflection light from the upper reflection layer and reflection light from the lower reflection layer. An incidence of a shadow effect can be reduced and unnecessary EUV light can be eliminated, so that a pattern on the reflection mask can be projected precisely on a silicon wafer. Since the phase reversing layer includes the same material as the reflection layer and an absorption layer, mask fabrication processes can be handled easily.

    摘要翻译： 一种用于极紫外（EUV）光刻的反射掩模及其制造方法，其中反射掩模包括基板，在基板上形成为多层结构的下反射层，并且包括反射EUV光的材料， 在下反射层上形成多层结构并反射EUV光的上反射层和以一定图案形成在下反射层和上反射层之间的相位反转层，并且产生来自上层的反射光之间的相消干涉 反射层和来自下反射层的反射光。 可以减少阴影效应的入射，并且可以消除不必要的EUV光，使得反射掩模上的图案可以精确地投影在硅晶片上。 由于相位反转层包括与反射层和吸收层相同的材料，因此可以容易地处理掩模制造工艺。