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    SEMICONDUCTOR DEVICE, DISPLAY DEVICE, INPUT/OUTPUT DEVICE, AND ELECTRONIC DEVICE
    81.
    发明申请
    SEMICONDUCTOR DEVICE, DISPLAY DEVICE, INPUT/OUTPUT DEVICE, AND ELECTRONIC DEVICE 有权
    半导体器件，显示器件，输入/输出器件和电子器件

    公开(公告)号：US20150372023A1

    公开(公告)日：2015-12-24

    申请号：US14741840

    申请日：2015-06-17

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Masami JINTYOU ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Suzunosuke HIRAISHI

    IPC: H01L27/12 ,  H01L29/66 ,  H01L29/423 ,  H01L29/786

    CPC classification number: H01L27/1225 ,  H01L21/385 ,  H01L21/441 ,  H01L21/47573 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

    Abstract: To suppress change in electric characteristics and improve reliability of a semiconductor device including a transistor formed using an oxide semiconductor. A semiconductor device includes a transistor including a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, and a pair of electrodes. The gate electrode and the oxide semiconductor film overlap with each other. The oxide semiconductor film is located between the first insulating film and the second insulating film and in contact with the pair of electrodes. The first insulating film is located between the gate electrode and the oxide semiconductor film. An etching rate of a region of at least one of the first insulating film and the second insulating film is higher than 8 nm/min when etching is performed using a hydrofluoric acid.

    Abstract translation: 抑制包括使用氧化物半导体形成的晶体管的半导体器件的电特性变化和提高可靠性。 半导体器件包括晶体管，其包括栅电极，第一绝缘膜，氧化物半导体膜，第二绝缘膜和一对电极。 栅电极和氧化物半导体膜彼此重叠。 氧化物半导体膜位于第一绝缘膜和第二绝缘膜之间并与该对电极接触。 第一绝缘膜位于栅电极和氧化物半导体膜之间。 当使用氢氟酸进行蚀刻时，第一绝缘膜和第二绝缘膜中的至少一个的区域的蚀刻速率高于8nm / min。

    Semiconductor Device and Display Device Including the Same
    82.
    发明申请
    Semiconductor Device and Display Device Including the Same 审中-公开
    包括其的半导体器件和显示器件

    公开(公告)号：US20150348998A1

    公开(公告)日：2015-12-03

    申请号：US14721362

    申请日：2015-05-26

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Junichi Koezuka ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Yukinori SHIMA ,  Toshimitsu OBONAI

    IPC: H01L27/12 ,  H01L21/44

    CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/78648 ,  H01L29/7869

    Abstract: Provided is a transistor which includes an oxide semiconductor film in a channel region. A change from a shift value before light irradiation to a shift value under light irradiation is greater than or equal to −1 V and less than or equal to 0.5 V, where the shift value is a gate voltage at a point of intersection of an axis of 1×10−12 A and a steepest tangent line of the logarithm of a drain current in drain current-gate voltage characteristics of the transistor, and where the light irradiation is performed on the oxide semiconductor film with light having an energy greater than or equal to a band gap of the oxide semiconductor film.

    Abstract translation: 提供了在沟道区域中包括氧化物半导体膜的晶体管。 在光照射之前的偏移值到光照射下的移动值的变化大于或等于-1V且小于或等于0.5V，其中移位值是轴的交点处的栅极电压 1×10-12A的最大切线和晶体管的漏极电流 - 栅极电压特性中的漏极电流的对数的最快切线，并且其中用氧化物半导体膜对具有能量大于或等于 等于氧化物半导体膜的带隙。

    Semiconductor Device and Display Device Including the Same
    83.
    发明申请
    Semiconductor Device and Display Device Including the Same 审中-公开
    包括其的半导体器件和显示器件

    公开(公告)号：US20150333088A1

    公开(公告)日：2015-11-19

    申请号：US14710029

    申请日：2015-05-12

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Daisuke KUROSAKI

    IPC: H01L27/12 ,  H01L29/786

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/78696

    Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is inhibited and reliability is improved. The transistor includes a first gate electrode; a first insulating film over the first gate electrode; an oxide semiconductor film over the first insulating film; a source electrode electrically connected to the oxide semiconductor film; a drain electrode electrically connected to the oxide semiconductor film; a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and a second gate electrode over the second insulating film. The second insulating film includes oxygen. The second gate electrode includes the same metal element as at least one of metal elements of the oxide semiconductor film and has a region thinner than the oxide semiconductor film.

    Abstract translation: 在使用包括氧化物半导体的晶体管的半导体器件中，电特性的变化被抑制，可靠性提高。 晶体管包括第一栅电极; 第一栅电极上的第一绝缘膜; 第一绝缘膜上的氧化物半导体膜; 与氧化物半导体膜电连接的源电极; 电连接到所述氧化物半导体膜的漏电极; 氧化物半导体膜上的第二绝缘膜，源电极和漏电极; 以及在所述第二绝缘膜上方的第二栅电极。 第二绝缘膜包括氧。 第二栅极包括与氧化物半导体膜的金属元素中的至少一个相同的金属元素，并且具有比氧化物半导体膜更薄的区域。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    84.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20150311346A1

    公开(公告)日：2015-10-29

    申请号：US14685737

    申请日：2015-04-14

    Applicant: Semiconductor Energy Laboratory Co., LTD.

    Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Yasutaka NAKAZAWA ,  Shunpei YAMAZAKI

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2029/42388

    Abstract: Provided is a transistor with small parasitic capacitance or high frequency characteristics or a semiconductor device including the transistor. An oxide semiconductor film includes a first region in contact with a first conductive film, a second region in contact with a first insulating film, a third region in contact with a third insulating film, a fourth region in contact with a second insulating film, and a fifth region in contact with a second conductive film. The first insulating film is positioned over the first conductive film and the oxide semiconductor film. The second insulating film is positioned over the second conductive film and the oxide semiconductor film. The third insulating film is positioned over the first insulating film, the second insulating film, and the oxide semiconductor film. The third conductive film and the oxide semiconductor film partly overlap with each other with the third insulating film provided therebetween.

    Abstract translation: 提供具有小寄生电容或高频特性的晶体管或包括晶体管的半导体器件。 氧化物半导体膜包括与第一导电膜接触的第一区域，与第一绝缘膜接触的第二区域，与第三绝缘膜接触的第三区域，与第二绝缘膜接触的第四区域，以及 与第二导电膜接触的第五区域。 第一绝缘膜位于第一导电膜和氧化物半导体膜之上。 第二绝缘膜位于第二导电膜和氧化物半导体膜之上。 第三绝缘膜位于第一绝缘膜，第二绝缘膜和氧化物半导体膜上。 第三导电膜和氧化物半导体膜在其间设置有第三绝缘膜，彼此部分重叠。

    SEMICONDUCTOR DEVICE
    85.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150228803A1

    公开(公告)日：2015-08-13

    申请号：US14608224

    申请日：2015-01-29

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

    IPC: H01L29/786 ,  H01L27/12

    CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

    Abstract: The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.

    Abstract translation: 该半导体器件包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管; 第一晶体管和第二晶体管具有不同的结构。 在每个晶体管的氧化物半导体膜中，杂质元素包含在不与栅电极重叠的区域中。 含有杂质元素的氧化物半导体膜的区域用作低电阻区域。 此外，含有杂质元素的氧化物半导体膜的区域与含有氢的膜接触。 此外，设置在驱动器电路部分中的第一晶体管可以包括堆叠第一膜和第二膜的氧化物半导体膜，并且设置在像素部分中的第二晶体管可以包括与第一膜不同的氧化物半导体膜 以金属元素的原子比计。

    SEMICONDUCTOR DEVICE
    86.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150228799A1

    公开(公告)日：2015-08-13

    申请号：US14615031

    申请日：2015-02-05

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

    IPC: H01L29/786 ,  H01L27/12

    CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

    Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

    Abstract translation: 提供了包括其中导通电流高的氧化物半导体的半导体器件。 该半导体器件包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管; 第一晶体管和第二晶体管具有不同的结构。 此外，第一晶体管和第二晶体管是具有顶栅结构的晶体管。 在每个晶体管的氧化物半导体膜中，杂质元素包含在不与栅电极重叠的区域中。 含有杂质元素的氧化物半导体膜的区域用作低电阻区域。 此外，含有杂质元素的氧化物半导体膜的区域与含有氢的膜接触。 设置在驱动电路部分的第一晶体管包括设置氧化物半导体膜的两个栅电极。

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    88.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250169180A1

    公开(公告)日：2025-05-22

    申请号：US18839759

    申请日：2023-03-06

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yasuharu HOSAKA ,  Masami JINTYOU ,  Takahiro IGUCHI ,  Chieko MISAWA ,  Ami SATO ,  Masayoshi DOBASHI

    IPC: H10D86/40 ,  H10D30/67 ,  H10D86/01 ,  H10D86/60

    Abstract: A semiconductor device having a high degree of integration is provided. The semiconductor device includes a first and a second transistor, and an insulating layer. The first transistor includes a source electrode, a drain electrode over the insulating layer over the source electrode, a first semiconductor layer in contact with a top surface of the source electrode, an inner wall of an opening provided in the insulating layer, and a top surface of the drain electrode, a first gate insulating layer in contact with a top surface and a side surface of the first semiconductor layer, and a first gate electrode over the first gate insulating layer that includes a region overlapping with the inner wall of the opening. The second transistor includes a second semiconductor layer over the insulating layer, the source electrode in contact with one of a top surface and a side surface of the second semiconductor layer, the drain electrode in contact with the other of the top surface and the side surface of the second semiconductor layer, a second gate insulating layer in contact with the top surface of the second semiconductor layer, a top surface and a side surface of the source electrode, and a top surface and a side surface of the drain electrode, and a second gate electrode over the second gate insulating layer. The first semiconductor layer is in contact with the second gate electrode.

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