公开(公告)号：US20110115846A1

公开(公告)日：2011-05-19

申请号：US12946733

申请日：2010-11-15

申请人： Seiji Suzuki ,  Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Masahiro Sugimoto ,  Susumu Hirosawa ,  Takeaki Nakano

发明人： Seiji Suzuki ,  Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Masahiro Sugimoto ,  Susumu Hirosawa ,  Takeaki Nakano

IPC分类号： B41J2/165

CPC分类号： B41J2/16532 ,  B41J2/16541 ,  B41J2/16544 ,  B41J2/16547 ,  B41J2/16585

摘要： An apparatus includes a recording head arranged so as to oppose a sheet moving in a first direction, in which a plurality of first nozzle chips and a plurality of second nozzle chips each having a nozzle array are arranged as different arrays in a second direction crossing the first direction, and in which the first nozzle chips and the second nozzle chips adjacent to each other are shifted from each other in the second direction, a first suction unit opposed to the first nozzle chips and configured to suction ink from a part of the nozzle arrays included in the first nozzle chips, a second suction unit opposed to the second nozzle chips and configured to suction ink from a part of the nozzle arrays included in the second nozzle chips, a suction holder configured to retain the first suction unit and the second suction unit, and a movement mechanism configured to cause relative movement between the recording head and the suction holder in the second direction, wherein the first suction unit and the second suction unit are shifted from each other in the second direction in correspondence with the shift between the first nozzle chips and the second nozzle chips.

摘要翻译： 一种设备包括：记录头，其布置成与沿第一方向移动的片材相对，其中多个第一喷嘴芯片和多个具有喷嘴阵列的第二喷嘴芯片沿与第二方向交叉的第二方向排列成不同的阵列 第一方向，并且其中彼此相邻的第一喷嘴芯片和第二喷嘴芯片沿第二方向彼此偏移;第一抽吸单元，与第一喷嘴芯片相对并且构造成从喷嘴的一部分吸取墨水 包括在第一喷嘴芯片中的阵列，与第二喷嘴芯片相对并且被配置为从包括在第二喷嘴芯片中的喷嘴阵列的一部分吸入墨水的第二抽吸单元，构造成保持第一抽吸单元和第二抽吸单元 抽吸单元和移动机构，其构造成在第二方向上在记录头和吸持保持器之间产生相对运动，其中第一抽吸 单元和第二抽吸单元相对于第一喷嘴芯片和第二喷嘴芯片之间的移动在第二方向上彼此偏移。

公开(公告)号：US20110109690A1

公开(公告)日：2011-05-12

申请号：US12896721

申请日：2010-10-01

申请人： Akira Kida ,  Masahiro Sugimoto ,  Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Seiji Suzuki ,  Takeaki Nakano ,  Susumu Hirosawa

发明人： Akira Kida ,  Masahiro Sugimoto ,  Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Seiji Suzuki ,  Takeaki Nakano ,  Susumu Hirosawa

IPC分类号： B41J2/165

CPC分类号： B41J2/16552 ,  B41J2/16585

摘要： A supply unit is provided to supply humidified gas near a nozzle array of a line-type recording head. The flow-rate distribution of the supplied humidified gas in a direction of the nozzle array is changeable in accordance with a conveying region where a sheet is conveyed while opposing the nozzle array.

摘要翻译： 提供供应单元以在线型记录头的喷嘴阵列附近提供加湿气体。 所供应的加湿气体在喷嘴阵列的方向上的流量分布根据与喷嘴阵列相对的输送片材的输送区域而变化。

公开(公告)号：US20100210023A1

公开(公告)日：2010-08-19

申请号：US12585598

申请日：2009-09-18

申请人： David T.W. Wong ,  Masaru Tomita ,  Masahiro Sugimoto ,  Akiyoshi Hirayama ,  Tomoyoshi Soga

发明人： David T.W. Wong ,  Masaru Tomita ,  Masahiro Sugimoto ,  Akiyoshi Hirayama ,  Tomoyoshi Soga

IPC分类号： G01N33/68 ,  G01N33/00 ,  G01N27/26 ,  B01D57/02

CPC分类号： G01N33/57488 ,  G01N33/57407 ,  G01N2800/18 ,  Y10T436/145555 ,  Y10T436/17 ,  Y10T436/173845 ,  Y10T436/20

摘要： The present invention provides a novel oral cancer and periodontal disease salivary metabolome for use in the diagnosis or for providing a prognosis for oral cancer and periodontal disease in an individual. The present invention also provides novel methods of diagnosing or providing a prognosis for oral cancer or periodontal disease by detecting metabolites found in the saliva of an individual. Finally, the present invention provides kits for the detection of salivary metabolites useful in the diagnosis or prognosis of oral cancer and periodontal disease in an individual.

摘要翻译： 本发明提供了一种用于诊断或提供个体中口腔癌和牙周病的预后的新型口腔癌和牙周病唾液代谢素。 本发明还提供了通过检测个体唾液中发现的代谢物来诊断或提供口腔癌或牙周病预后的新方法。 最后，本发明提供了用于检测个体中可用于口腔癌和牙周病诊断或预后的唾液代谢物的试剂盒。

公开(公告)号：US20100102332A1

公开(公告)日：2010-04-29

申请号：US12530901

申请日：2008-03-13

申请人： Yasuo Takahashi ,  Masakatsu Maeda ,  Akinori Seki ,  Akira Kawahashi ,  Masahiro Sugimoto

发明人： Yasuo Takahashi ,  Masakatsu Maeda ,  Akinori Seki ,  Akira Kawahashi ,  Masahiro Sugimoto

IPC分类号： H01L29/24 ,  H01L21/768

CPC分类号： H01L29/7813 ,  H01L21/0485 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/732 ,  Y10S438/931

摘要： A method of forming an Ohmic contact on a P-type 4H—SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H—SiC substrate including a deposition step of successively depositing a 1 to 60 nm thick first Al layer, Ti layer, and second Al layer on a P-type 4H—SiC substrate and an alloying step of forming an alloy layer between the SiC substrate and the Ti layer through the first Al layer by heat treatment in a nonoxidizing atmosphere. An Ohmic contact on a P-type 4H—SiC substrate formed by this method is also provided.

摘要翻译： 提供了在P型4H-SiC上形成欧姆接触的方法和由其形成的欧姆接触。 在P型4H-SiC衬底上形成欧姆接触的方法，包括在P型4H-SiC衬底上依次沉积1至60nm厚的第一Al层，Ti层和第二Al层的沉积步骤;以及 合金化步骤，通过在非氧化气氛中的热处理，通过第一Al层在SiC衬底和Ti层之间形成合金层。 还提供了通过该方法形成的P型4H-SiC衬底上的欧姆接触。

公开(公告)号：US07696071B2

公开(公告)日：2010-04-13

申请号：US11976450

申请日：2007-10-24

申请人： Masahito Kodama ,  Eiko Hayashi ,  Masahiro Sugimoto

发明人： Masahito Kodama ,  Eiko Hayashi ,  Masahiro Sugimoto

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02433 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

摘要： The invention provides a method for producing a group III nitride based semiconductor having a reduced number of crystal defects.A GaN layer 2 is epitaxially grown on a sapphire substrate 1 having C-plane as a main plane (FIG. 1A). Then, the layer is wet-etched by use of a 25% aqueous TMAH solution at 85° C. for one hour, to thereby form an etch pit 4 (FIG. 1B). Then, a GaN layer 5 is grown on the GaN layer 2 through the ELO method (FIG. 1C). The thus-formed GaN layer 5 has a screw dislocation density lower than that of the GaN layer 2.

摘要翻译： 本发明提供一种具有减少晶体缺陷数的III族氮化物基半导体的制造方法。 在具有C面作为主平面的蓝宝石衬底1上外延生长GaN层2（图1A）。 然后，使用25％TMAH水溶液在85℃湿法蚀刻该层1小时，从而形成蚀刻坑4（图1B）。 然后，通过ELO方法在GaN层2上生长GaN层5（图1C）。 如此形成的GaN层5的螺旋位错密度低于GaN层2的位错密度。

公开(公告)号：US4742007A

公开(公告)日：1988-05-03

申请号：US702560

申请日：1985-02-15

申请人： Kuniki Kino ,  Toshihide Nakanishi ,  Masahiro Sugimoto

发明人： Kuniki Kino ,  Toshihide Nakanishi ,  Masahiro Sugimoto

IPC分类号： C12P13/22 ,  C12R1/15 ,  C12N1/20

CPC分类号： C12R1/15 ,  C12P13/227 ,  Y10S435/843

摘要： L-tryptophan can be prepared in good yield by a fermentation process which comprises culturing a novel L-tryptophan-producing microorganism of the genus Corynebacterium, which is resistant to at least one member selected from glyphosate [N-phosphonomethyl glycine], paraquat [1,1'-dimethyl-4,4'-bispyridinium] and derivatives thereof, and recovering L-tryptophan from the culture broth.

摘要翻译： 可以通过发酵方法以良好的产率制备L-色氨酸，其包括培养棒状杆菌属的新型L-色氨酸生产微生物，其对选自草甘膦[N-膦酰基甲基甘氨酸]，百草枯[1 ，1'-二甲基-4,4'-二吡啶鎓]及其衍生物，并从培养液中回收L-色氨酸。

公开(公告)号：US4725878A

公开(公告)日：1988-02-16

申请号：US844943

申请日：1986-03-27

申请人： Akira Miyauchi ,  Hiroshi Nishimoto ,  Tadashi Okiyama ,  Hiroo Kitasagami ,  Masahiro Sugimoto ,  Haruo Tamada ,  Shinji Emori

发明人： Akira Miyauchi ,  Hiroshi Nishimoto ,  Tadashi Okiyama ,  Hiroo Kitasagami ,  Masahiro Sugimoto ,  Haruo Tamada ,  Shinji Emori

IPC分类号： H01L23/057 ,  H01L23/48 ,  H01L23/498 ,  H01L23/66 ,  H05K1/02 ,  H05K1/18 ,  H05K3/32 ,  H05K3/34 ,  H01L39/02

CPC分类号： H01L23/66 ,  H01L23/057 ,  H01L23/49822 ,  H01L24/49 ,  H05K1/0243 ,  H01L2223/6627 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48235 ,  H01L2224/49109 ,  H01L2224/49171 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/16195 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H05K1/0219 ,  H05K1/0237 ,  H05K1/182 ,  H05K1/184 ,  H05K2201/09236 ,  H05K2201/10409 ,  H05K2201/10689 ,  H05K2201/10969 ,  H05K3/325 ,  H05K3/3421

摘要： A semiconductor device provided with signal lines which connect a chip, provided at a top portion of a package, with external terminals provided at a bottom portion of the package. The signal lines have portions formed along side surfaces of the package. Ground surfaces are formed at predetermined distances on two sides of the high-speed signal lines. A coplanar waveguide is formed by the high-speed signal lines and the ground surfaces, so the impedance of vertical portions of the high-speed signal lines is matched to the circuits connected thereto.

公开(公告)号：US4097428A

公开(公告)日：1978-06-27

申请号：US800925

申请日：1977-05-26

申请人： Takashi Nara ,  Ryo Okachi ,  Mitsuyoshi Yamamoto ,  Yasuki Mori ,  Moriyuki Sato ,  Masahiro Sugimoto ,  Yoshiaki Shimizu

发明人： Takashi Nara ,  Ryo Okachi ,  Mitsuyoshi Yamamoto ,  Yasuki Mori ,  Moriyuki Sato ,  Masahiro Sugimoto ,  Yoshiaki Shimizu

IPC分类号： C07H15/224 ,  C07D309/22

CPC分类号： C07H15/224

摘要： A new antibiotic, Fortimicin C, is produced by fermentation of a microorganism belonging to the genus Micromonospora. The antibiotic is accumulated in the culture medium and is isolated therefrom.

摘要翻译： 一种新的抗生素Fortimicin C是通过发酵属于小单孢菌属的微生物产生的。 抗生素在培养基中积聚并从中分离。

公开(公告)号：US08876251B2

公开(公告)日：2014-11-04

申请号：US12896703

申请日：2010-10-01

申请人： Masahiro Sugimoto ,  Akira Kida ,  Susumu Hirosawa ,  Takeaki Nakano ,  Hiroyuki Tanaka ,  Seiji Suzuki ,  Yoshiaki Suzuki ,  Yuji Kanome

发明人： Masahiro Sugimoto ,  Akira Kida ,  Susumu Hirosawa ,  Takeaki Nakano ,  Hiroyuki Tanaka ,  Seiji Suzuki ,  Yoshiaki Suzuki ,  Yuji Kanome

IPC分类号： B41J2/165 ,  B41J2/17 ,  B41J29/377

CPC分类号： B41J29/377 ,  B41J2/165 ,  B41J2/1714

摘要： An apparatus includes a supply unit having a humidifying portion that supplies humidified gas near a nozzle array of a line-type recording head. In correspondence to displacement of the recording head in a direction of the nozzle array, at least one of an introducing direction and an introducing position of the supplied humidified gas can be changed.

摘要翻译： 一种装置，包括：供给单元，具有在线型记录头的喷嘴列附近供给加湿气体的加湿部。 对应于记录头沿着喷嘴阵列的方向的位移，可以改变供应的加湿气体的导入方向和导入位置中的至少一个。

公开(公告)号：US08633101B2

公开(公告)日：2014-01-21

申请号：US13499652

申请日：2010-09-02

申请人： Masahiro Sugimoto ,  Akinori Seki ,  Akira Kawahashi ,  Yasuo Takahashi ,  Masakatsu Maeda

发明人： Masahiro Sugimoto ,  Akinori Seki ,  Akira Kawahashi ,  Yasuo Takahashi ,  Masakatsu Maeda

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/44 ,  H01L21/302 ,  H01L21/461 ,  H01L21/31

CPC分类号： H01L29/452 ,  H01L21/28575 ,  H01L29/2003 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40

摘要： A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing layer forming step of forming a carbon containing layer containing carbon on a nitride semiconductor layer, and a titanium containing layer forming step of forming a titanium containing layer containing titanium on the carbon containing layer. A complete solid solution Ti (C, N) layer of TiN and TiC is formed between the titanium containing layer and the nitride semiconductor layer. As a result, the titanium containing layer comes to be in ohmic contact with the nitride semiconductor layer throughout the border therebetween.

摘要翻译： 提供了包括对氮化物半导体具有低接触电阻的电极的半导体器件的制造方法。 制造方法包括在氮化物半导体层上形成含有碳的含碳层的含碳层形成工序和在含碳层上形成含有钛的含钛层的含钛层形成工序。 在含钛层和氮化物半导体层之间形成TiN和TiC的完全固溶Ti（C，N）层。 结果，含钛层在其间的整个边界处与氮化物半导体层欧姆接触。