公开(公告)号：US20060261341A1

公开(公告)日：2006-11-23

申请号：US11492996

申请日：2006-07-26

申请人： Kengo Akimoto ,  Toru Takayama ,  Tetsuji Yamaguchi ,  Shunpei Yamazaki

发明人： Kengo Akimoto ,  Toru Takayama ,  Tetsuji Yamaguchi ,  Shunpei Yamazaki

IPC分类号： H01L29/786

CPC分类号： H01L21/3185 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/31612 ,  H01L21/67109 ,  H01L21/67248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： It is an object of the present invention is to provide a technique for forming a dense insulating film of good quality that is applicable to a transistor made on a substrate weak against heat such as a glass and a semiconductor device that can realize high performance and high reliability using the technique. In the present invention a silicon oxide film is formed on a crystalline semiconductor film, which is formed on an insulating surface, by the sputtering method using silicon as a target by applying high-frequency power in an atmosphere containing oxygen or oxygen and a rare gas, a silicon nitride film is formed thereon by applying high-frequency power in an atmosphere containing nitrogen or nitrogen and a rare gas, and then, heat treatment of a stacked body of the crystalline semiconductor film, the silicon oxide film, and the silicon nitride film at a temperature higher than a temperature for forming the films is performed.

摘要翻译： 本发明的目的是提供一种用于形成质量好的致密绝缘膜的技术，该技术可应用于能够实现高性能和高性能的诸如玻璃和半导体器件之类的耐热弱的基板上制成的晶体管 使用该技术的可靠性。 在本发明中，通过在含有氧或氧的气氛中施加高频电力的稀有气体，通过使用硅作为靶的溅射法，在形成在绝缘表面上的结晶半导体膜上形成氧化硅膜 通过在含氮或氮气和稀有气体的气氛中施加高频功率而形成氮化硅膜，然后对结晶半导体膜，氧化硅膜和氮化硅的层叠体进行热处理 在高于用于形成膜的温度的温度下进行膜。

公开(公告)号：US20050263767A1

公开(公告)日：2005-12-01

申请号：US11136705

申请日：2005-05-25

申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tetsuji Yamaguchi ,  Hiromichi Godo

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tetsuji Yamaguchi ,  Hiromichi Godo

IPC分类号： H01L21/77 ,  H01L21/8247 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/786

CPC分类号： H01L27/127 ,  H01L24/32 ,  H01L24/73 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/1214 ,  H01L27/13 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L2029/7863 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01056 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01014

摘要： The present invention provides a semiconductor device capable of being mass-produced and a manufacturing method of the semiconductor device. The present invention also provides a semiconductor device using an extreme thin integrated circuit and a manufacturing method of the semiconductor device. Further, the present invention provides a low power consumption semiconductor device and a manufacturing method of the semiconductor device. According to one aspect of the present invention, a semiconductor device that has a semiconductor nonvolatile memory element transistor over an insulating surface in which a floating gate electrode of the memory transistor is formed by a plurality of conductive particles or semiconductor particles is provided.

摘要翻译： 本发明提供一种能够大规模生产的半导体器件和该半导体器件的制造方法。 本发明还提供了使用极薄集成电路的半导体器件和半导体器件的制造方法。 此外，本发明提供一种半导体器件的低功耗半导体器件和制造方法。 根据本发明的一个方面，提供了一种在绝缘表面上具有半导体非易失性存储元件晶体管的半导体器件，其中存储晶体管的浮置栅电极由多个导电粒子或半导体粒子形成。

公开(公告)号：US20050253178A1

公开(公告)日：2005-11-17

申请号：US11110918

申请日：2005-04-21

申请人： Tetsuji Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

发明人： Tetsuji Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

IPC分类号： H01L21/00 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L27/1259 ,  H01L27/1214

摘要： A salicide process is conducted to a thin film integrated circuit without worrying about damages to a glass substrate, and thus, high-speed operation of a circuit can be achieved. A base metal film, an oxide and a base insulating film are formed over a glass substrate. A TFT having a sidewall is formed over the base insulating film, and a metal film is formed to cover the TFT. Annealing is conducted by RTA or the like at such a temperature that does not cause shrinkage of the substrate, and a high-resistant metal silicide layer is formed in source and drain regions. After removing an unreacted metal film, laser irradiation is conducted for the second annealing; therefore a silicide reaction proceeds and the high-resistant metal silicide layer becomes a low-resistant metal silicide layer. In the second annealing, a base metal film absorbs and accumulates heat of the laser irradiation, and a semiconductor layer is supplied with heat of the base metal film in addition to heat of the laser irradiation, thereby enhancing efficiency of the silicide reaction in the source and drain regions.

摘要翻译： 对薄膜集成电路进行自对准处理，而不用担心对玻璃基板的损坏，因此可以实现电路的高速操作。 在玻璃基板上形成贱金属膜，氧化物和基底绝缘膜。 在基底绝缘膜上形成具有侧壁的TFT，并且形成覆盖TFT的金属膜。 在不会引起基板收缩的温度下由RTA等进行退火，在源极和漏极区域形成高阻金属硅化物层。 在除去未反应的金属膜之后，对第二次退火进行激光照射; 因此进行硅化物反应，高阻金属硅化物层变成低电阻金属硅化物层。 在第二退火中，贱金属膜吸收并累积激光照射的热量，并且除了激光照射的热量之外，还向半导体层供应贱金属膜的热量，从而提高源的硅化物反应的效率 和漏区。

公开(公告)号：US20050194645A1

公开(公告)日：2005-09-08

申请号：US11072632

申请日：2005-03-07

申请人： Tetsuji Yamaguchi ,  Kiyoshi Kato

发明人： Tetsuji Yamaguchi ,  Kiyoshi Kato

IPC分类号： H01L27/115 ,  H01L29/10

CPC分类号： H01L21/84 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/1203

摘要： In a process of manufacturing elements of different structures and characteristics on the same substrate at the same time, the number of steps is increased and complicated. In view of this, the invention provides a semiconductor device and a manufacturing process thereof in which elements of different structures are formed on the same substrate while reducing the number of steps. According to the invention, in accordance with a memory transistor that requires the largest number of steps when being formed among elements that forms a semiconductor memory device, other high speed transistor and high voltage transistor are efficiently manufactured. Thus, the number of steps is suppressed and a low cost semiconductor memory device can be manufactured.

摘要翻译： 在同一基板上同时制造不同结构和特性的元件的过程中，台阶增加复杂。 鉴于此，本发明提供了一种半导体器件及其制造方法，其中不同结构的元件形成在同一衬底上，同时减少了步骤数。 根据本发明，根据在形成半导体存储器件的元件之间形成最大数量的步骤的存储晶体管时，有效地制造其它高速晶体管和高压晶体管。 因此，抑制了步数，并且可以制造低成本的半导体存储器件。

公开(公告)号：US20050095842A1

公开(公告)日：2005-05-05

申请号：US10976882

申请日：2004-11-01

申请人： Akira Ishikawa ,  Tetsuji Yamaguchi

发明人： Akira Ishikawa ,  Tetsuji Yamaguchi

IPC分类号： H01L21/3205 ,  G02F1/1362 ,  H01L21/768 ,  H01L21/77 ,  H01L21/84 ,  H01L23/52 ,  H01L27/12 ,  H01L29/417

CPC分类号： H01L27/124 ,  G02F1/136227 ,  H01L29/41733 ,  H01L29/4908

摘要： A technology for easily forming a multi-layer wiring structure that is fine and reliable. In the multi-layer wiring structure, the lower-layer wiring and the upper-layer wiring that are formed to sandwich an insulating layer are electrically connected to each other in a projection formed in the lower-layer wiring. The projection includes a columnar conductive member and the upper and lower layers thereof and each of the lower layer and the upper layer is formed of a conductive layer formed over the entire lower-layer wiring. The upper-layer is electrically connected to the lower-layer wiring in the portion where the projection is exposed substantially on the same plane as the top surface of the insulating layer.

摘要翻译： 一种易于形成精细可靠的多层布线结构的技术。 在多层布线结构中，形成为夹着绝缘层的下层布线和上层布线在形成在下层布线中的突起中彼此电连接。 突起包括柱状导电部件及其上下层，下层和上层各自由形成在整个下层布线上的导电层形成。 在突起部与绝缘层的上表面大致位于同一平面上的部分，上层与下层布线电连接。

公开(公告)号：US06744507B2

公开(公告)日：2004-06-01

申请号：US10316555

申请日：2002-12-11

申请人： Tetsuji Yamaguchi

发明人： Tetsuji Yamaguchi

IPC分类号： G01N1502

CPC分类号： G01N15/1456 ,  G01N2015/0096 ,  G01N2015/1493

摘要： A dry particle-size distribution measuring apparatus and method is applied to powdery and particulate samples that are conventionally known as having a dispersion limit of 1 &mgr;m and are dispersed to a state of fine particles or a submicron particle size, and which therefore can be accurately measured. The sample is subjected to primary dispersion by a primary dispersion flow that reaches a critical pressure and a subsonic speed, and the sample is then subjected to a secondary dispersion by a secondary dispersion flow that is different in direction from the primary dispersion flow and that reaches a critical pressure and a subsonic speed. The dispersed primary size powdery and particulate sample is supplied to a flow cell in which air flows, the flow cell 2 is irradiated with a laser beam 6, and the particle-size distribution of the sample is measured on the basis of a detection output of scattered light and/or diffracted light caused by the sample.

摘要翻译： 将干燥的粒度分布测量装置和方法应用于通常称为具有1um的分散极限并分散到细颗粒或亚微米粒径的状态的粉末和颗粒样品，因此可以准确地 测量。 通过达到临界压力和亚音速的初级分散流使样品进行初级分散，然后通过与主分散流方向不同的二次分散流对样品进行二次分散，并达到 临界压力和亚音速。 将分散的一次尺寸粉末和颗粒样品供应到空气流动的流动池中，用激光束6照射流动池2，并且基于检测输出测量样品的粒度分布 由样品引起的散射光和/或衍射光。

公开(公告)号：US06538051B1

公开(公告)日：2003-03-25

申请号：US08826305

申请日：1997-03-27

申请人： Atsushi Ikezawa ,  Tetsuji Yamaguchi

发明人： Atsushi Ikezawa ,  Tetsuji Yamaguchi

IPC分类号： C08K320

CPC分类号： C09D5/024 ,  C09D163/00 ,  C10M111/04 ,  C10M161/00 ,  C10M173/02 ,  C10M2201/065 ,  C10M2201/0653 ,  C10M2201/066 ,  C10M2201/0663 ,  C10M2201/102 ,  C10M2209/04 ,  C10M2209/043 ,  C10M2209/062 ,  C10M2209/0625 ,  C10N2230/06 ,  C10N2250/02 ,  C10N2250/121 ,  C08L2666/54

摘要： An aqueous coating agent for forming lubricating films comprising a hydrophilic resin; a solid lubricating agent comprising MoS2 and at least one antimony sulfide selected from the group consisting of Sb2S3 and Sb2S5, where a weight ratio of MoS2 to antimony sulfides is from 1;0.05 to 1:12; and water and wherein the weight ratio of the solid lubricating agent to the hydrophilic resin is from 0.7:1 to 3:1.

摘要翻译： 一种用于形成包含亲水性树脂的润滑膜的水性涂料; 包含MoS 2和选自Sb 2 S 3和Sb 2 S 5中的至少一种硫化锑的固体润滑剂，其中MoS 2与硫化锑的重量比为1; 0.05至1:12; 和水，其中固体润滑剂与亲水性树脂的重量比为0.7:1至3:1。

公开(公告)号：US06334977B1

公开(公告)日：2002-01-01

申请号：US09581166

申请日：2000-08-21

申请人： Masakazu Matsui ,  Akira Notomi ,  Toshiaki Nishio ,  Takayuki Maeda ,  Iwami Ishihara ,  Tetsuji Yamaguchi ,  Yoshimi Onitsuka ,  Yuichi Kojima ,  Ryoji Miki ,  Takashi Inami

发明人： Masakazu Matsui ,  Akira Notomi ,  Toshiaki Nishio ,  Takayuki Maeda ,  Iwami Ishihara ,  Tetsuji Yamaguchi ,  Yoshimi Onitsuka ,  Yuichi Kojima ,  Ryoji Miki ,  Takashi Inami

IPC分类号： C22C3826

CPC分类号： C22C33/0285 ,  B23K35/0255 ,  B23K35/308 ,  C23C4/04 ,  C23C4/073

摘要： A powder material for powder plasma build-up welding which exhibits excellent resistance and bending properties comprises C in an amount of 0.06 to 0.15% (% by weight, the same hereinafter), Si in an amount of 0.2 to 1.0%, Mn in an amount of 0.2 to 1.0%, Cr in an amount of 17 to 30%, Nb in an amount of 0.6 to 1.5%, Ni in an amount of not more than 0.5%, and the balance consisting of Fe and unavoidable impurities.

摘要翻译： 表现出优异的电阻和弯曲性能的粉末等离子体堆积焊接用粉末材料，其含量为0.06〜0.15％（重量％，以下相同），Si：0.2〜1.0％，Mn： 用量为0.2〜1.0％，Cr为17〜30％，Nb为0.6〜1.5％，Ni为0.5％以下，余量由Fe和不可避免的杂质构成。

公开(公告)号：US06191853B1

公开(公告)日：2001-02-20

申请号：US09406499

申请日：1999-09-28

申请人： Tetsuji Yamaguchi ,  Tatsuo Igushi

发明人： Tetsuji Yamaguchi ,  Tatsuo Igushi

IPC分类号： G01N1502

CPC分类号： G01N15/02 ,  G01N2015/0216

摘要： An apparatus and method for measuring a particle size distribution comprising a light source directing a laser light to particles which are dispersed into a solvent and which exhibit Brownian motion, a detector converting an interference light caused by Doppler-shifted scattered light by the particles into an electric detection signal, an operation unit obtaining an intermediate function by processing the detection signal, and a processing unit subjecting the intermediate function to an inverse problem and thereby calculating a particle size distribution. The apparatus includes a data selecting unit between the operation unit and the processing unit for selecting data from all data regions in the intermediate function at appropriate intervals and creating a data table used in an inverse problem.

摘要翻译： 一种用于测量粒度分布的装置和方法，包括将激光指向分散在溶剂中并显示布朗运动的颗粒的光源，检测器将由颗粒的多普勒偏移散射光引起的干涉光转换成 电检测信号，通过处理检测信号获得中间功能的操作单元，以及对中间函数进行逆问题并由此计算粒度分布的处理单元。 该装置包括在操作单元和处理单元之间的数据选择单元，用于以适当的间隔从中间函数中的所有数据区域中选择数据，并创建在逆问题中使用的数据表。

公开(公告)号：US08907262B2

公开(公告)日：2014-12-09

申请号：US13456418

申请日：2012-04-26

申请人： Tetsuji Yamaguchi

发明人： Tetsuji Yamaguchi

IPC分类号： H01L27/00 ,  H01L27/146

CPC分类号： H01L27/14621 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/307 ,  H01L31/02164 ,  H01L31/02165 ,  H01L31/0232 ,  H01L51/442 ,  H01L51/447

摘要： A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.

摘要翻译： 一种固态成像装置，其特征在于，具备：与形成有半导体基板的布线层的第一面相反一侧的第二表面侧设置的光电转换膜，相对于规定的半导体基板的光进行光电转换 并在其他波长区域透射光; 以及光电转换层，其设置在所述半导体基板中，对于已经透射了所述光电转换膜的其他波长区域的光进行光电转换，所述光电转换膜的输入光相对于所述光电转换膜从所述第二表面侧入射 转换膜和光电转换层。