公开(公告)号：US08432721B2

公开(公告)日：2013-04-30

申请号：US13201890

申请日：2011-02-01

申请人： Mitsuteru Iijima ,  Takeshi Takagi

发明人： Mitsuteru Iijima ,  Takeshi Takagi

IPC分类号： G11C11/00

CPC分类号： G11C13/0069 ,  G11C13/0007 ,  G11C13/0097 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2213/32 ,  G11C2213/72 ,  G11C2213/79 ,  H01L45/08 ,  H01L45/146

摘要： Programming a variable resistance element includes: a writing step of applying a writing voltage pulse to transition metal oxide comprising two stacked metal oxide layers to decrease resistance of the metal oxide, each metal oxide layer having different oxygen deficiency; and an erasing step of applying an erasing voltage pulse, of different polarity than the writing pulse, to the metal oxide to increase resistance of the metal oxide. |Vw1|>|Vw2|, Vw1 representing voltage of the writing pulse for first to N-th writing steps, and Vw2 representing voltage of the writing pulse for (N+1)-th and subsequent writing steps, N being at least equal to 1, te1>te2, te1 representing pulse width of the erasing pulse for first to M-th erasing steps, and te2 representing pulse width of the erasing pulse for (M+1)-th and subsequent erasing steps. M>1. The (N+1)-th writing step follows the M-th erasing step.

摘要翻译： 编程可变电阻元件包括：写入步骤，对包含两个堆叠的金属氧化物层的过渡金属氧化物施加写入电压脉冲，以降低金属氧化物的电阻，每个金属氧化物层具有不同的氧缺乏; 以及将与写入脉冲不同的擦除电压脉冲施加到金属氧化物以增加金属氧化物的电阻的擦除步骤。 | Vw1 |> | Vw2 |，表示第一至第N写入步骤的写入脉冲的电压的Vw1，以及表示第（N + 1）个和后续写入步骤的写入脉冲的电压的Vw2，N至少相等 到1，te1> te2，te1表示第一到第M擦除步骤的擦除脉冲的脉冲宽度，te2表示用于（M + 1）个和随后的擦除步骤的擦除脉冲的脉冲宽度。 M> 1。 第（N + 1）个写入步骤在第M擦除步骤之后。

公开(公告)号：US20130010530A1

公开(公告)日：2013-01-10

申请号：US13636258

申请日：2011-03-18

申请人： Koji Katayama ,  Takeshi Takagi ,  Mitsuteru Iijima

发明人： Koji Katayama ,  Takeshi Takagi ,  Mitsuteru Iijima

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C2213/72 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

摘要： Provided is a method for driving a non-volatile memory element in which a variable resistance element including a first electrode, a second electrode, and a variable resistance layer capable of reversibly changing between a high resistance state and a low resistance state with application of electrical signals having different polarities is connected in series with a current steering element having bidirectional rectifying characteristics with respect to an applied voltage. After the non-volatile memory element is manufactured, the resistance value of the variable resistance layer is reduced from a resistance value in the initial resistance state higher than that in the high resistance state by applying, to the non-volatile memory element, a voltage pulse having the polarity identical to that of the voltage pulse for changing the variable resistance layer from the low resistance state to the high resistance state in the normal operations.

摘要翻译： 提供一种用于驱动非易失性存储元件的方法，其中包括第一电极，第二电极和可变电阻层的可变电阻元件，所述可变电阻元件能够通过施加电而在高电阻状态和低电阻状态之间可逆地变化 具有不同极性的信号与具有相对于施加电压的双向整流特性的电流导向元件串联连接。 在制造非易失性存储元件之后，通过向非易失性存储元件施加电压，可变电阻层的电阻值比初始电阻状态中的电阻值高于高电阻状态的电阻值 脉冲具有与用于在正常操作中将可变电阻层从低电阻状态改变为高电阻状态的电压脉冲的极性相同的脉冲。

公开(公告)号：US20120320661A1

公开(公告)日：2012-12-20

申请号：US13596154

申请日：2012-08-28

申请人： Shunsaku MURAOKA ,  Takeshi Takagi ,  Satoru Mitani ,  Koji Katayama

发明人： Shunsaku MURAOKA ,  Takeshi Takagi ,  Satoru Mitani ,  Koji Katayama

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/72 ,  G11C2213/79 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

摘要： A method includes applying a first polarity writing voltage pulse to a metal oxide layer to change its resistance state from high to low into a write state, applying a second polarity erasing voltage pulse different from the first polarity to the metal oxide layer to change its resistance state from low to high into an erase state, and applying an initial voltage pulse having the second polarity to the metal oxide layer before first application of the writing voltage pulse, to change an initial resistance value of the metal oxide layer. R0>RH>RL and |V0|>|Ve|≧|Vw| are satisfied where R0, RL, and RH are the resistance values of the initial, write, and erase states, respectively, of the metal oxide layer, and V0, Vw, and Ve are voltage values of the initial, writing, and erasing voltage pulses, respectively.

摘要翻译： 一种方法包括：将第一极性写入电压脉冲施加到金属氧化物层，以将其电阻状态从高变为低电平变为写入状态，将不同于第一极性的第二极性擦除电压脉冲施加到金属氧化物层以改变其电阻 状态从低到高进入擦除状态，以及在首次施加写入电压脉冲之前将具有第二极性的初始电压脉冲施加到金属氧化物层，以改变金属氧化物层的初始电阻值。 R0> RH> RL和| V0 |> | Ve |≥| Vw | 满足R0，RL和RH分别是金属氧化物层的初始，写入和擦除状态的电阻值，V0，Vw和Ve是初始，写入和擦除电压的电压值 脉冲。

公开(公告)号：US08258493B2

公开(公告)日：2012-09-04

申请号：US12515379

申请日：2007-11-13

申请人： Takumi Mikawa ,  Takeshi Takagi

发明人： Takumi Mikawa ,  Takeshi Takagi

IPC分类号： H01L29/00

CPC分类号： H01L27/101 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/0688 ,  H01L27/112 ,  H01L27/115 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1683

摘要： A nonvolatile semiconductor memory apparatus (10) of the present invention comprises a substrate (10), lower-layer electrode wires (15) provided on the substrate (11), an interlayer insulating layer (16) which is disposed on the substrate (11) including the lower-layer electrode wires (15) and is provided with contact holes at locations respectively opposite to the lower-layer electrode wires (15), resistance variable layers (18) which are respectively connected to the lower-layer electrode wires (15); and non-ohmic devices (20) which are respectively provided on the resistance variable layers (18) such that the non-ohmic devices are respectively connected to the resistance variable layers (18). The non-ohmic devices (20) each has a laminated-layer structure including plural semiconductor layers, a laminated-layer structure including a metal electrode layer and an insulator layer, or a laminated-layer structure including a metal electrode layer and a semiconductor layer. One layer of the laminated-layer structure is embedded to fill each of the contact holes and the semiconductor layer or the insulator layer which is the other layer of the laminated-layer structure has a larger area than an opening of each of the contact holes and is provided on the interlayer insulating layer (16).

摘要翻译： 本发明的非易失性半导体存储装置（10）具备基板（10），设置在基板（11）上的下层电极布线（15），设置在基板（11）上的层间绝缘层（16） ），并且在分别与下层电极线（15）相对的位置设置接触孔，电阻变化层（18）分别与下层电极线（15）连接 15）; 和非欧姆器件（20），其分别设置在电阻变化层（18）上，使得非欧姆器件分别连接到电阻变化层（18）。 非欧姆装置（20）各自具有包括多个半导体层的层叠层结构，包括金属电极层和绝缘体层的层叠层结构，或者包括金属电极层和半导体层的层叠层结构 。 嵌入层叠层结构的一层以填充每个接触孔，作为层叠层结构的另一层的半导体层或绝缘体层的面积比每个接触孔的开口大， 设置在层间绝缘层（16）上。

公开(公告)号：US08094482B2

公开(公告)日：2012-01-10

申请号：US12529466

申请日：2008-10-28

申请人： Zhiqiang Wei ,  Takeshi Takagi ,  Ken Kawai ,  Kazuhiko Shimakawa

发明人： Zhiqiang Wei ,  Takeshi Takagi ,  Ken Kawai ,  Kazuhiko Shimakawa

IPC分类号： G11C11/00

CPC分类号： H01L27/101 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2013/0073 ,  G11C2013/009 ,  G11C2211/5646 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/79

摘要： A nonvolatile memory apparatus and a nonvolatile data storage medium of the present invention, including nonvolatile memory elements each of which changes its resistance in response to electric pulses applied, comprises a first write circuit for performing first write in which a first electric pulse is applied to the nonvolatile memory element to switch a resistance value of the nonvolatile memory element from a first resistance value to a second resistance value and a second electric pulse which is opposite in polarity to the first electric pulse is applied to the nonvolatile memory element to switch the resistance value of the nonvolatile memory element from the second resistance value to the first resistance value.

摘要翻译： 本发明的非易失性存储装置和非易失性数据存储介质，包括各自根据施加的电脉冲改变其电阻的非易失性存储元件，包括用于执行第一写入的第一写入电路，其中施加第一电脉冲到 将非易失性存储元件的电阻值从第一电阻值切换到与第一电脉冲极性相反的第二电阻值和第二电脉冲的非易失性存储元件施加到非易失性存储元件，以将电阻 非易失性存储元件的值从第二电阻值到第一电阻值。

公开(公告)号：US08093578B2

公开(公告)日：2012-01-10

申请号：US12513638

申请日：2007-11-16

申请人： Takeshi Takagi ,  Takumi Mikawa

发明人： Takeshi Takagi ,  Takumi Mikawa

IPC分类号： H01L27/10 ,  H01L21/02

CPC分类号： H01L27/101 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1683

摘要： The present invention is configured such that a resistance variable element (16) and a rectifying element (20) are formed on a substrate (12). The resistance variable element (16) is configured such that a resistance variable layer (14) made of a metal oxide material is sandwiched between a lower electrode (13) and an upper electrode (15). The rectifying element (20) is connected to the resistance variable element (16), and is configured such that a blocking layer (18) is sandwiched between a first electrode layer (17) located on a lower side of the blocking layer (18) and a second electrode layer (19) located on an upper side of the blocking layer (18). The resistance variable element (16) and the rectifying element (20) are connected to each other in series in a thickness direction of the resistance variable layer (14), and the blocking layer (18) is formed as a barrier layer having a hydrogen barrier property.

摘要翻译： 本发明被构造成使得在基板（12）上形成电阻可变元件（16）和整流元件（20）。 电阻可变元件（16）被构造为使得由金属氧化物材料制成的电阻变化层（14）夹在下电极（13）和上电极（15）之间。 整流元件（20）连接到电阻可变元件（16），并且被构造为使阻挡层（18）夹在位于阻挡层（18）的下侧的第一电极层（17）之间， 以及位于阻挡层（18）的上侧的第二电极层（19）。 电阻可变元件（16）和整流元件（20）在电阻变化层（14）的厚度方向上串联连接，并且阻挡层（18）形成为具有氢的阻挡层 屏障属性。

公开(公告)号：US20110174708A1

公开(公告)日：2011-07-21

申请号：US13121872

申请日：2009-10-02

申请人： Shin-ichi Oota ,  Hidenari Yamagata ,  Takeshi Takagi ,  Koji Egawa

发明人： Shin-ichi Oota ,  Hidenari Yamagata ,  Takeshi Takagi ,  Koji Egawa

IPC分类号： B01F9/00 ,  B01D15/08 ,  B01L9/00

CPC分类号： G01N35/1097 ,  B01F11/0002 ,  B01F11/0037 ,  B01L9/06 ,  B01L2300/0851 ,  G01N30/06 ,  G01N2035/00524

摘要： A sample stirring device of the present invention includes a driving roller and two follower rollers for coming into contact with a sample container including a cylindrical portion for containing a sample to be stirred. The driving roller is driven for rotation to stir the sample contained in the sample container. The two follower rollers have rotation axes inclined with respect to an axial direction of the cylindrical portion. This arrangement allows the sample container such as a blood collection tube to be rotated stably.

摘要翻译： 本发明的样品搅拌装置包括驱动辊和两个从动辊，用于与包括用于容纳待搅拌样品的圆筒部分的样品容器接触。 驱动辊被驱动旋转以搅拌包含在样品容器中的样品。 两个从动辊具有相对于圆筒部的轴向倾斜的旋转轴。 这种布置允许诸如采血管的样品容器能够稳定地旋转。

公开(公告)号：US07801186B2

公开(公告)日：2010-09-21

申请号：US11952647

申请日：2007-12-07

申请人： Sugio Wako ,  Atsushi Koyama ,  Xiongfei Zhang ,  Hiroshi Matsuura ,  Satoru Abe ,  Takeshi Takagi

发明人： Sugio Wako ,  Atsushi Koyama ,  Xiongfei Zhang ,  Hiroshi Matsuura ,  Satoru Abe ,  Takeshi Takagi

IPC分类号： H01S3/30

CPC分类号： H01S3/09415 ,  G01N2201/06113 ,  G02B6/29317 ,  G02B6/29358 ,  H01S3/06708 ,  H01S3/0675 ,  H01S3/08036 ,  H01S3/1062 ,  H01S3/1618

摘要： A spatial coupling provided between an amplified-light waveguide and an output-light waveguide includes a wavelength selecting element that selectively transmits a light having a desired wavelength band out of a spontaneous emission light generated in the amplified-light waveguide and a lens unit that couples the spontaneous emission light to the wavelength selecting unit. An input-side light reflecting unit provided between a semiconductor pumping laser and the amplified-light waveguide and an output-side light reflecting unit formed on an output side of the spatial coupling unit form a laser resonator.

摘要翻译： 提供在放大光波导和输出光波导之间的空间耦合包括波长选择元件，其选择性地透射在放大光波导中产生的自发发射光中具有期望波长带的光;以及透镜单元，其耦合 对波长选择单元的自发发射光。 设置在半导体泵浦激光器和放大光波导之间的输入侧光反射单元和形成在空间耦合单元的输出侧的输出侧光反射单元形成激光谐振器。

公开(公告)号：US20100200432A1

公开(公告)日：2010-08-12

申请号：US12449732

申请日：2008-02-24

申请人： Tatsuo Kamata ,  Takeshi Takagi

发明人： Tatsuo Kamata ,  Takeshi Takagi

IPC分类号： G01N27/26 ,  C01B21/08

CPC分类号： C12Q1/006 ,  C12Q1/28

摘要： The present invention relates to a method, a reagent and an apparatus for determining a substrate concentration based on an amount of hydrogen peroxide generated from a substrate. In the present invention, a suppressing agent for suppressing a reaction between the hydrogen peroxide and an inhibitor is added. As the suppressing agent, an azide compound such as sodium azide or a nitrite compound such as sodium nitrite is used. In the invention, a supporting electrolyte, such as sodium chloride or potassium chloride may be further added.

摘要翻译： 本发明涉及一种基于从基底产生的过氧化氢量来确定底物浓度的方法，试剂和装置。 在本发明中，添加抑制过氧化氢与抑制剂的反应的抑制剂。 作为抑制剂，可以使用叠氮化钠等叠氮化合物，亚硝酸钠等亚硝酸酯化合物。 在本发明中，可以进一步添加氯化钠或氯化钾等担载电解质。

公开(公告)号：US07729866B2

公开(公告)日：2010-06-01

申请号：US11666055

申请日：2005-10-25

申请人： Koji Sugiyama ,  Takeshi Takagi

发明人： Koji Sugiyama ,  Takeshi Takagi

IPC分类号： G01N33/49 ,  G01N27/327 ,  C12Q1/26

CPC分类号： G01N27/3271

摘要： The present invention relates to a method for measuring the concentration of a particular component in a blood sample containing blood cells based on a variable correlated with the concentration of the particular component. In the present invention, a concentration (S) in blood plasma obtained by removing blood cell components from the blood sample, a concentration (DI) in the blood sample computed by a differential method and a concentration (EP) in the blood sample computed by an equilibrium point method are expressed by a relational expression which is unrelated to the proportion of the blood cell components in the blood sample, and the concentration of the particular component is computed by using the relational expression.

摘要翻译： 本发明涉及基于与特定成分的浓度相关的变量来测定含有血细胞的血液样品中特定成分的浓度的方法。 在本发明中，通过从血液样品中除去血细胞成分而获得的血浆中的浓度（S），通过微分法计算的血液样品中的浓度（DI）和血液样品中的浓度（EP） 平衡点法由与血样中血细胞成分比例无关的关系表达式表示，特定成分的浓度用关系式计算。