公开(公告)号：US06956235B2

公开(公告)日：2005-10-18

申请号：US10834093

申请日：2004-04-29

申请人： Shunpei Yamazaki ,  Toru Mitsuki ,  Kenji Kasahara ,  Taketomi Asami ,  Tamae Takano ,  Takeshi Shichi ,  Chiho Kokubo

发明人： Shunpei Yamazaki ,  Toru Mitsuki ,  Kenji Kasahara ,  Taketomi Asami ,  Tamae Takano ,  Takeshi Shichi ,  Chiho Kokubo

IPC分类号： G02F1/1368 ,  G02F1/1362 ,  G09F9/30 ,  G09F9/35 ,  H01L21/20 ,  H01L21/28 ,  H01L21/336 ,  H01L21/77 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/08 ,  H01L27/092 ,  H01L27/12 ,  H01L29/04 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L29/78696 ,  G02F1/13454 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/045 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78624 ,  H01L29/78675 ,  H01L29/78684

摘要： The orientation of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is improved and a TFT formed from this crystalline semiconductor film is provided. In a semiconductor device whose TFT is formed from a semiconductor layer mainly containing silicon, the semiconductor layer has a channel formation region and an impurity region doped with an impurity of one type of conductivity. 20% or more of the channel formation region is the {101} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film, the plane being detected by an electron backscatter diffraction pattern method, 3% or less of the channel formation region is the {001} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film, 5% or less of the channel formation region is the {111} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film.

摘要翻译： 通过使非晶半导体膜结晶而获得的结晶半导体膜的取向得到改善，并且提供了由该结晶半导体膜形成的TFT。 在其TFT由主要含硅的半导体层形成的半导体器件中，半导体层具有沟道形成区和掺杂有一种导电类型的杂质的杂质区。 沟道形成区域的20％以上是相对于结晶半导体膜的表面形成等于或小于10度的角度的{101}晶格面，通过电子反向散射衍射图法检测的平面 ，3％以下的沟道形成区域相对于结晶半导体膜的表面形成等于或小于10度的{001}晶格面，5％以下的沟道形成区域为 相对于晶体半导体膜的表面形成等于或小于10度的角度的{111}晶格面。

公开(公告)号：US06844249B2

公开(公告)日：2005-01-18

申请号：US10648288

申请日：2003-08-27

申请人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L21/20

CPC分类号： H01L27/12 ,  H01L27/1281 ,  H01L27/1285

摘要： The invention relates to a method for manufacturing a semiconductor device, and it is an object of the invention to form a semiconductor area formed in island-like patterns as a single crystal or an area which can be regarded as a single crystal, and to simultaneously achieve a laminated structure by which various characteristics of TFTs can be stabilized, wherein an insulation film is formed on a glass substrate, and island-like semiconductor layer is formed thereon. A laser beam passed through a cylindrical lens is made into a linear laser beam and irradiated onto the island-like semiconductor layer by an optical system. The island-like semiconductor layer is subjected to two components, one of which is a direct laser beam component passing through the cylindrical lens and being irradiated directly onto the island-like semiconductor layer, and the other of which is a diffused laser beam component transmitting an insulation film and a substrate, being reflected by a reflection plate, and again transmitting the substrate and insulation film and being irradiated onto the island-like semiconductor laser.

摘要翻译： 本发明涉及一种半导体器件的制造方法，其目的在于，形成岛状图案形成的半导体区域，作为单晶体或可以看作单晶面积的区域，同时 实现了能够稳定TFT的各种特性的层压结构，其中在玻璃基板上形成绝缘膜，并且在其上形成岛状半导体层。 通过柱面透镜的激光束被制成线性激光束并通过光学系统照射到岛状半导体层上。 岛状半导体层经受两个部件，其中一个部件是通过柱面透镜的直接激光束部件，并直接照射在岛状半导体层上，另一个部件是扩散激光束分量传输 由反射板反射的绝缘膜和基板，并再次透射基板和绝缘膜并照射到岛状半导体激光器上。

公开(公告)号：US06809382B2

公开(公告)日：2004-10-26

申请号：US10633754

申请日：2003-08-04

申请人： Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L2701

CPC分类号： H01L27/1214 ,  G02F1/13454 ,  H01L27/3244 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78636 ,  H01L29/78645

摘要： To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.

摘要翻译： 通过根据各个电路的功能优化设置在半导体器件的电路中的底栅型或倒置交错型TFT的结构来提高半导体器件的操作特性和可靠性。 至少与栅电极重叠的LDD区域形成在驱动电路的N沟道型TFT中，并且在像素矩阵电路的N沟道型TFT中形成与栅电极不重叠的LDD区域。 两种LDD区域的浓度彼此不同，从而获得最佳电路操作。

公开(公告)号：US06767799B2

公开(公告)日：2004-07-27

申请号：US10324051

申请日：2002-12-20

申请人： Akihisa Shimomura ,  Kenji Kasahara ,  Aiko Shiga ,  Hidekazu Miyairi ,  Koichiro Tanaka ,  Koji Dairiki

发明人： Akihisa Shimomura ,  Kenji Kasahara ,  Aiko Shiga ,  Hidekazu Miyairi ,  Koichiro Tanaka ,  Koji Dairiki

IPC分类号： H01L2100

CPC分类号： H01L21/02686 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/6675 ,  H01L29/78672 ,  Y10S438/949

摘要： A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is formed on a substrate having an insulating surface and a laser beam having a wavelength longer than 350 nm is irradiated to the non-single crystal semiconductor film, thus crystallizing the non-single crystal silicon film. The non-single crystal semiconductor film has a film thickness distribution within the surface of the substrate, and a differential coefficient of a laser beam absorptivity with respect to the film thickness of the non-single crystal semiconductor film is positive.

摘要翻译： 即使a-Si膜的膜厚等发生波动，也能够实现均匀结晶化的激光束照射方法。 本发明提供一种激光束照射方法，其中在具有绝缘面的基板上形成非单晶半导体膜，并且将具有波长超过350nm的激光束照射到非单晶半导体膜上，因此 使非单晶硅膜结晶。 非单晶半导体膜在基板的表面内具有膜厚分布，并且相对于非单晶半导体膜的膜厚度的激光束吸收率的微分系数为正。

公开(公告)号：US06764886B2

公开(公告)日：2004-07-20

申请号：US10315204

申请日：2002-12-10

申请人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba ,  Kenji Kasahara

发明人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba ,  Kenji Kasahara

IPC分类号： H01L2184

CPC分类号： H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L23/544 ,  H01L27/1285 ,  H01L29/42384 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at least indispensable portion. Since the time required for laser crystallization can be reduced, it is possible to increase the substrate processing speed. By applying the above-described constitution to a conventional SLS method, a means for solving such problem in the conventional SLS method that the substrate processing efficiency is insufficient, is provided.

摘要翻译： 在激光照射之前形成岛状半导体膜和标记。 标记用作位置参考，以便不在衬底表面内的整个半导体上执行激光照射，而是在至少不可缺少的部分上进行最小结晶。 由于可以减少激光结晶所需的时间，可以提高基板处理速度。 通过将上述结构应用于传统的SLS方法，提供了一种用于在传统SLS方法中解决这种问题的方法，即基板处理效率不足。

公开(公告)号：US06709902B2

公开(公告)日：2004-03-23

申请号：US10035205

申请日：2002-01-04

申请人： Hidehito Kitakado ,  Ritsuko Kawasaki ,  Kenji Kasahara

发明人： Hidehito Kitakado ,  Ritsuko Kawasaki ,  Kenji Kasahara

IPC分类号： H01L2703

CPC分类号： H01L29/66765 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78633

摘要： The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.

摘要翻译： 本发明提供了一种半导体器件，其中布置在每个电路中的底栅TFT或反向交错TFT适当地构成为与各个电路的功能一致，从而提高了半导体器件的工作效率和可靠性 。 在该结构中，像素TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的N沟道TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的P沟道TFT中的LDD区域布置成与沟道保护绝缘膜重叠并与栅电极重叠。

公开(公告)号：US06703265B2

公开(公告)日：2004-03-09

申请号：US09918547

申请日：2001-08-01

申请人： Taketomi Asami ,  Mitsuhiro Ichijo ,  Satoshi Toriumi ,  Takashi Ohtsuki ,  Toru Mitsuki ,  Kenji Kasahara ,  Tamae Takano ,  Chiho Kokubo ,  Shunpei Yamazaki ,  Takeshi Shichi

发明人： Taketomi Asami ,  Mitsuhiro Ichijo ,  Satoshi Toriumi ,  Takashi Ohtsuki ,  Toru Mitsuki ,  Kenji Kasahara ,  Tamae Takano ,  Chiho Kokubo ,  Shunpei Yamazaki ,  Takeshi Shichi

IPC分类号： H01L2100

CPC分类号： H01L29/045 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78666 ,  H01L29/78684 ,  H01L2029/7863

摘要： The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semiconductor device whose active region is formed from the crystalline semiconductor film and a method of manufacturing the semiconductor device are provided. In a semiconductor film containing silicon and germanium as its ingredient and having a crystal structure, the {101} plane reaches 30% or more of all the lattice planes detected by Electron backscatter diffraction. This semiconductor film is obtained by forming an amorphous semiconductor film containing silicon and germanium as its ingredient through plasma CVD in which hydride, fluoride, or chloride gas of a silicon atom is used, the repetition frequency is set to 10 kHz or less, and the duty ratio is set to 50% or less for intermittent electric discharge or pulsed electric discharge, and introducing an element for promoting crystallization of the amorphous semiconductor film to the surface thereof to crystallize the amorphous semiconductor film while utilizing the introduced element.

公开(公告)号：US06624013B2

公开(公告)日：2003-09-23

申请号：US10124489

申请日：2002-04-18

申请人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L2100

CPC分类号： H01L27/12 ,  H01L27/1281 ,  H01L27/1285

摘要： The invention relates to a method for manufacturing a semiconductor device, and it is an object of the invention to form a semiconductor area formed in island-like patterns as a single crystal or an area which can be regarded as a single crystal, and to simultaneously achieve a laminated structure by which various characteristics of TFTs can be stabilized, wherein an insulation film is formed on a glass substrate, and island-like semiconductor layer is formed thereon. A laser beam passed through a cylindrical lens is made into a linear laser beam and irradiated onto the island-like semiconductor layer by an optical system. The island-like semiconductor layer is subjected to two components, one of which is a direct laser beam component passing through the cylindrical lens and being irradiated directly onto the island-like semiconductor layer, and the other of which is a diffused laser beam component transmitting an insulation film and a substrate, being reflected by a reflection plate, and again transmitting the substrate and insulation film and being irradiated onto the island-like semiconductor laser.

公开(公告)号：US06599788B1

公开(公告)日：2003-07-29

申请号：US09640077

申请日：2000-08-17

申请人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Hisashi Ohtani

发明人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Hisashi Ohtani

IPC分类号： H01L2184

CPC分类号： H01L29/78603 ,  H01L27/1255 ,  H01L27/1277 ,  H01L27/1281

摘要： A crystalline semiconductor film in which the position and size of a crystal grain is controlled is fabricated, and the crystalline semiconductor film is used for a channel formation region of a TFT, so that a high performance TFT is realized. An island-like semiconductor layer is made to have a temperature distribution, and a region where temperature change is gentle is provided to control the nucleus generation speed and nucleus generation density, so that the crystal grain is enlarged. In a region where an island-like semiconductor layer 1003 overlaps with a base film 1002, a thick portion is formed in the base film 1002. The volume of this portion increases and heat capacity becomes large, so that a cycle of temperature change by irradiation of a pulse laser beam to the island-like semiconductor layer becomes gentle (as compared with other thin portion). Like this, a laser beam is irradiated from the front side and reverse side of the substrate to directly heat the semiconductor layer, and heat conduction from the semiconductor layer to the side of the substrate and heat conduction of the semiconductor layer in the horizontal direction to the substrate are used, so that the increase in the size of the crystal grain is realized.

公开(公告)号：US06555875B2

公开(公告)日：2003-04-29

申请号：US10125499

申请日：2002-04-19

申请人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Hisashi Ohtani

发明人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Hisashi Ohtani

IPC分类号： H01L2710

CPC分类号： H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

摘要： A strip-like first insulating layer is formed on a glass substrate, and a second insulating layer is formed on the first insulating layer. Furthermore, an island-like semiconductor layer is formed on the second insulating layer. The island-like semiconductor layer is crystallized by irradiation with laser light through both surfaces of the glass substrate.

摘要翻译： 在玻璃基板上形成带状的第一绝缘层，在第一绝缘层上形成第二绝缘层。 此外，在第二绝缘层上形成岛状半导体层。 岛状半导体层通过玻璃基板的两面通过激光​​照射而结晶化。