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240 条记录 (耗时 0.053 秒)

    Joint mechanism for structural members
    85.
    发明授权
    Joint mechanism for structural members 失效
    结构构件的联合机构

    公开(公告)号：US06435755B1

    公开(公告)日：2002-08-20

    申请号：US09537312

    申请日：2000-03-29

    申请人： Shigekazu Nagai ,  Koji Sugano ,  Hiroyuki Shiomi ,  Takeshi Nagai

    发明人： Shigekazu Nagai ,  Koji Sugano ,  Hiroyuki Shiomi ,  Takeshi Nagai

    IPC分类号： F16L4100

    CPC分类号： F16B7/04 ,  B23Q3/102 ,  E04B2001/5868 ,  F16B7/0453 ,  F16B7/046 ,  F16B7/0466 ,  F16B7/187 ,  F16B2200/205 ,  F16B2200/30 ,  H02B1/012 ,  Y10S285/906 ,  Y10T403/341 ,  Y10T403/36 ,  Y10T403/3926

    摘要： A passage communication member is fitted in a first passage in a structural member, and has a head which is mounted in a slot in another structural member. The first passage in the structural member and a passage in the other structural member are held in communication with each other through a through hole that is defined in the passage communication member. Alternatively, a first engaging member is inserted in a recess defined in a structural member, and a second engaging member is retained in a slot in another structural member. When the first and second engaging members are coupled to each other by a fastening member, the structural members are firmly joined and fixed to each other.

    摘要翻译： 通道连通构件装配在结构构件的第一通道中，并且具有安装在另一结构构件的狭槽中的头部。 结构构件中的第一通道和另一结构构件中的通道通过限定在通道连通构件中的通孔保持彼此连通。 或者，第一接合构件插入限定在结构构件中的凹部中，并且第二接合构件保持在另一结构构件的狭槽中。 当第一和第二接合构件通过紧固构件彼此联接时，结构构件彼此牢固地接合和固定。

    Semiconductor memory device having redundancy circuit for saving faulty memory cells
    86.
    发明授权
    Semiconductor memory device having redundancy circuit for saving faulty memory cells 有权

    公开(公告)号：US06434064B1

    公开(公告)日：2002-08-13

    申请号：US09888414

    申请日：2001-06-26

    申请人： Takeshi Nagai

    发明人： Takeshi Nagai

    IPC分类号： G11C700

    摘要： In a semiconductor memory device comprising a redundancy circuit for saving a faulty memory cell, there are provided a plurality of fuse sets to which a flexible mapping redundancy technique is applied. For at least one of these plurality of fuse sets, there is used a row/column common saving fuse set configured so as to make it available for use in one of row saving and column saving. Even in the case where a number of row faults occur with a memory chip or in the case where a number of column faults occur, the setting of row saving or column saving of a row/column common saving fuse set is adjusted accordingly, whereby saving efficiency is improved, and high saving efficiency in a small area can be achieved.

    Sweetener composition
    87.
    发明授权
    Sweetener composition 失效
    甜味剂组成

    公开(公告)号：US06372279B1

    公开(公告)日：2002-04-16

    申请号：US09707954

    申请日：2000-11-08

    申请人： Hirotoshi Ishida ,  Akihiro Kishishita ,  Takeshi Nagai ,  Kazutaka Nagashima ,  Atsuhiko Hirano

    发明人： Hirotoshi Ishida ,  Akihiro Kishishita ,  Takeshi Nagai ,  Kazutaka Nagashima ,  Atsuhiko Hirano

    IPC分类号： A23L1236

    CPC分类号： A23L27/32

    摘要： One embodiment of the present invention provides a sweetener composition, which includes a mixture of N-{N-(3,3-dimethylbutyl)-L-&agr;-aspartyl}-L-phenylalanine 1-methyl ester, and Acesulfame K, wherein a ratio of the Acesulfame K to a total amount of the N-{N-(3,3-dimethylbutyl)-L-&agr;-aspartyl}-L-phenylalanine 1-methyl ester and the Acesulfame K is in the range of 10 to 97% by weight, methods of making and of using. Another embodiment of the present invention provides a method for preparing a sweetener composition, which includes drying an A-type crystal of N-{N-(3,3-dimethylbutyl)-L-&agr;-aspartyl}-L-phenylalanine 1-methyl ester to obtain a C-type crystal of N-{N-(3,3-dimethylbutyl)-L-&agr;-aspartyl}-L-phenylalanine 1-methyl ester. Another embodiment of the present invention provides a method for producing a sweetener, which includes admixing N-{N-(3,3-dimethylbutyl)-L-&agr;-aspartyl}-L-phenylalanine 1-methyl ester with Acesulfame K, wherein a ratio of the Acesulfame K to a total amount of the N-{N-(3,3-dimethylbutyl)-L-&agr;-aspartyl}-L-phenylalanine 1-methyl ester and the Acesulfame K is in the range of 10 to 97% by weight. Another embodiment of the present invention provides a method for improving the dissolution rate of N-{N-(3,3-dimethylbutyl)-L-&agr;-aspartyl}-L-phenylalanine 1-methyl ester, which includes, prior to dissolving the N-{N-(3,3 -dimethylbutyl)-L-&agr;-aspartyl}-L-phenylalanine 1-methyl ester, admixing the N-{N-(3,3-dimethylbutyl)-L-&agr;-aspartyl}-L-phenylalanine 1-methyl ester with Acesulfame K, wherein a ratio of the Acesulfame K to a total amount of the N-{N-(3,3-dimethylbutyl)-L-&agr;-aspartyl}-L-phenylalanine 1-methyl ester and the Acesulfame K is in the range of 10 to 97% by weight.

    摘要翻译： 本发明的一个实施方案提供一种甜味剂组合物，其包括N- {N-（3,3-二甲基丁基）-L-α-天冬氨酰基} -L-苯丙氨酸1-甲酯和乙酰磺胺酸K的混合物，其中a 乙酰磺胺酸钾与N- {N-（3,3-二甲基丁基）-L-α-天冬氨酰基} -L-苯丙氨酸1-甲酯和乙酰磺胺酸钾的总量的比例在10至97的范围内 重量％，制造方法和使用方法。 本发明的另一个实施方案提供了一种制备甜味剂组合物的方法，其包括将N- {N-（3,3-二甲基丁基）-L-α-天冬氨酰基} -L-苯丙氨酸1-甲基 得到N- {N-（3,3-二甲基丁基）-L-α-天冬氨酰基} -L-苯丙氨酸1-甲酯的C型晶体。 本发明的另一个实施方案提供了一种生产甜味剂的方法，其包括将N- {N-（3,3-二甲基丁基）-L-α-天冬氨酰基} -L-苯丙氨酸1-甲酯与乙酰磺胺酸K混合，其中 乙酰磺胺酸钾与N- {N-（3,3-二甲基丁基）-L-α-天冬氨酰基} -L-苯丙氨酸1-甲酯和乙酰磺胺酸钾的总量的比例在10至97的范围内 重量％。 本发明的另一个实施方案提供了一种改善N- {N-（3,3-二甲基丁基）-L-α-天冬氨酰基} -L-苯丙氨酸1-甲酯的溶解速率的方法，其包括在溶解 N- {N-（3,3-二甲基丁基）-L-α-天冬氨酰基} -L-苯丙氨酸1-甲酯，混合N- {N-（3,3-二甲基丁基）-L-α-天冬氨酰基} L-苯丙氨酸1-甲酯与乙酰磺胺酸K，其中乙酰磺胺酸钾与N- {N-（3,3-二甲基丁基）-L-α-天冬氨酰基} -L-苯丙氨酸1-甲基酯的总量的比例 酯和丁磺克烷K的重量百分比在10至97％的范围内。

    Joint mechanism for structural members
    88.
    发明授权
    Joint mechanism for structural members 失效
    结构构件的联合机构

    公开(公告)号：US5785359A

    公开(公告)日：1998-07-28

    申请号：US964314

    申请日：1997-11-04

    申请人： Shigekazu Nagai ,  Koji Sugano ,  Hiroyuki Shiomi ,  Takeshi Nagai

    发明人： Shigekazu Nagai ,  Koji Sugano ,  Hiroyuki Shiomi ,  Takeshi Nagai

    IPC分类号： B23Q3/10 ,  E04B1/58 ,  F16B7/04 ,  F16B7/18 ,  F16L5/02

    CPC分类号： F16B7/04 ,  B23Q3/102 ,  F16B7/0453 ,  F16B7/046 ,  F16B7/0466 ,  F16B7/187 ,  E04B2001/5868 ,  Y10S285/906 ,  Y10T403/341 ,  Y10T403/36 ,  Y10T403/3926 ,  Y10T403/4671 ,  Y10T403/7094

    摘要： A passage communication member is fitted in a first passage in a structural member, and has a head which is mounted in a slot in another structural member. The first passage in the structural member and a passage in the other structural member are held in communication with each other through a through hole that is defined in the passage communication member. Alternatively, a first engaging member is inserted in a recess defined in a structural member, and a second engaging member is retained in a slot in another structural member. When the first and second engaging members are coupled to each other by a fastening member, the structural members are firmly joined and fixed to each other.

    摘要翻译： PCT No.PCT / JP94 / 01098 Sec。 371日期1996年1月11日 102（e）日期1996年1月11日PCT 1994年7月6日PCT公布。 公开号WO95 / 02128 日期1995年1月19日通道连通构件安装在结构构件的第一通道中，并且具有安装在另一结构构件的狭槽中的头部。 结构构件中的第一通道和另一结构构件中的通道通过限定在通道连通构件中的通孔保持彼此连通。 或者，第一接合构件插入限定在结构构件中的凹部中，并且第二接合构件保持在另一结构构件的狭槽中。 当第一和第二接合构件通过紧固构件彼此联接时，结构构件彼此牢固地接合并固定。

    SiC thin-film thermistor
    90.
    发明授权
    SiC thin-film thermistor 失效
    SIC薄膜热敏电阻

    公开(公告)号：US5216404A

    公开(公告)日：1993-06-01

    申请号：US734691

    申请日：1991-07-23

    申请人： Takeshi Nagai ,  Shuji Itou ,  Kunihiro Tsuruda

    发明人： Takeshi Nagai ,  Shuji Itou ,  Kunihiro Tsuruda

    IPC分类号： H01C1/14

    CPC分类号： H01C1/1413 ,  H01L2924/0002

    摘要： A thin-film thermistor element which has an electrically insulating substrate having first and second surfaces opposite to each other and also having a pair of through-holes defined therein so as to extend completely across the thickness thereof, and a pair of electrode films each including a body portion of large surface area and a generally comb-shaped portion continued outwardly from the body portion. The electrode films are formed by the use of a firing process on the first surface of the substrate with the respective comb-shaped portions thereof confronting with each other. First and second electroconductive films are also formed on respective surrounding wall faces defining the corresponding through-holes in the substrate in electrically connected relationship with the body portions of the associated electrode films. A temperature sensitive resistance film is formed by the use of a high frequency sputtering process on the first surface of the substrate so as to overlay the electrode films. A method of making the thermistor element is also disclosed.