公开(公告)号：US07605680B2

公开(公告)日：2009-10-20

申请号：US11661606

申请日：2005-09-07

申请人： Yasuhiro Matsumoto ,  Nobutaka Kubota ,  Takeshi Noda ,  Kazuhiro Matsuo ,  Kenji Kato ,  Mitsutaka Homma ,  Takao Wakabayashi

发明人： Yasuhiro Matsumoto ,  Nobutaka Kubota ,  Takeshi Noda ,  Kazuhiro Matsuo ,  Kenji Kato ,  Mitsutaka Homma ,  Takao Wakabayashi

IPC分类号： H01F7/00

CPC分类号： H01F7/1615 ,  H01F7/081 ,  H01F2007/1692

摘要： A highly efficient electromagnetic actuator which can reduce leakage of the magnetic flux is provided. The electromagnetic actuator comprises a first coil 31, a movable body 2 adapted to move on the central axis of the first coil 31, a first stator 11 covering the top face, bottom face and outer peripheral face of the first coil 31, and a permanent magnet 15 adapted to firmly latch the movable body 2 at one end point of its movable range. A second stator 12 adapted to control the magnetic flux generated from the permanent magnet 15 is provided in succession with the first stator 11. By providing the second stator 12, when releasing the movable body 2 from its firmly latched state, the permanent magnet 15 is not inversely excited or demagnetized.

摘要翻译： 提供了一种可以减少磁通泄漏的高效电磁致动器。 电磁致动器包括第一线圈31，适于在第一线圈31的中心轴线上移动的可移动体2，覆盖第一线圈31的顶面，底面和外周面的第一定子11和永久 磁体15适于在可移动范围的一个端点处牢固地将可移动体2锁定。 适于控制从永磁体15产生的磁通量的第二定子12与第一定子11连续地设置。通过设置第二定子12，当将可动体2从其牢固的锁定状态释放时，永磁体15是 没有反向激发或退磁。

公开(公告)号：US20090230397A1

公开(公告)日：2009-09-17

申请号：US12405396

申请日：2009-03-17

申请人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

发明人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

IPC分类号： H01L27/12 ,  H01L21/77

CPC分类号： H01L27/1251 ,  H01L27/1229 ,  H01L27/1285

摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.

摘要翻译： 显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件， 其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到 通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

公开(公告)号：US20090218574A1

公开(公告)日：2009-09-03

申请号：US12379095

申请日：2009-02-12

申请人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Daisuke Sonoda ,  Takeshi Kuriyagawa

发明人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Daisuke Sonoda ,  Takeshi Kuriyagawa

IPC分类号： H01L33/00

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78621

摘要： A display device includes a thin film transistor above a substrate, in which the thin film transistor is configured to include a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer formed to stride over the gate electrode on the gate insulating film, an inter-layer insulating film formed to cover the semiconductor layer, and a pair of electrodes formed to be connected to each of sides of the semiconductor layer interposing the gate electrode therebetween through contact holes formed through the inter-layer insulating film, high concentration impurity layers are formed at each connecting portion of the electrodes of the semiconductor layer, and an annular low-concentration impurity layer is formed to surround at least one of the high concentration impurity layers.

摘要翻译： 显示装置包括在基板上方的薄膜晶体管，其中薄膜晶体管被配置为包括栅极电极，形成为覆盖栅电极的栅极绝缘膜，形成为跨越栅极上的栅极电极的半导体层 绝缘膜，形成为覆盖半导体层的层间绝缘膜，以及一对电极，其形成为通过穿过该层间绝缘膜形成的接触孔而将半导体层的每一侧连接在其间的栅电极， 在半导体层的电极的每个连接部分处形成高浓度杂质层，并且形成环状低浓度杂质层以包围至少一个高浓度杂质层。

公开(公告)号：US20070176161A1

公开(公告)日：2007-08-02

申请号：US10590041

申请日：2006-01-17

申请人： Satoshi Seo ,  Takeshi Noda ,  Shunpei Yamazaki

发明人： Satoshi Seo ,  Takeshi Noda ,  Shunpei Yamazaki

IPC分类号： H01L29/06

CPC分类号： H01L51/5278 ,  H01L27/3211 ,  H01L27/3244 ,  H01L27/3267 ,  H01L51/5044 ,  H01L51/5218 ,  H01L51/5265

摘要： It is an object of the invention to provide a light emitting device which can display a superior image in which luminescent color from each light emitting layer is beautifully displayed and power consumption is lowered in a light emitting element in which light emitting layers are stacked. One feature of the invention is that, in a light emitting element which comprises light emitting layers stacked between electrodes, each distance between each light emitting layer and an electrode is approximately oddly multiplied ¼ wavelength by controlling a thickness of a layer provided therebetween to enhance luminous output efficiency. Another feature of the invention is that a drive voltage is lowered using a high conductive material for the layer compared with a conventional element.

摘要翻译： 发明内容本发明的目的在于提供一种发光装置，其能够显示优异的图像，其中来自每个发光层的发光颜色被精美地显示，并且功率消耗在层叠有发光层的发光元件中降低。 本发明的一个特征在于，在包含层叠在电极之间的发光层的发光元件中，通过控制其间设置的层的厚度来增强发光，每个发光层和电极之间的距离几乎是奇数倍的1/4波长 输出效率。 本发明的另一个特征是与常规元件相比，使用用于该层的高导电材料驱动电压降低。

公开(公告)号：US07202144B2

公开(公告)日：2007-04-10

申请号：US11007188

申请日：2004-12-09

申请人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

发明人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

IPC分类号： H01L21/20

CPC分类号： H01L21/02691 ,  C30B1/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)

摘要翻译： 通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。 半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在 与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1： 光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μs。

公开(公告)号：US07005675B2

公开(公告)日：2006-02-28

申请号：US10447268

申请日：2003-05-29

申请人： Yasuhiro Sakamoto ,  Takeshi Noda ,  Kazutaka Inukai

发明人： Yasuhiro Sakamoto ,  Takeshi Noda ,  Kazutaka Inukai

IPC分类号： H01L29/04

CPC分类号： H01L29/78696 ,  G09G3/3233 ,  G09G3/3283 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0809 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/043 ,  H01L27/3244

摘要： A current-input light-emitting device of the invention converts a current corresponding to a given video signal to a voltage by passing the current between two nodes of four nodes of a multi-terminal transistor, converts the voltage to a current again by shorting the other two nodes different and supplies the current to a light-emitting element. A threshold-corrected, voltage-input light-emitting device shorts two nodes of four nodes of a multi-terminal transistor to write a threshold value voltage into a storage capacitor and to write a voltage corresponding to a given video signal into the storage capacitor. Next, the other two nodes are shorted, and the voltage of the two nodes is converted to a current. Then the current is supplied to a light-emitting element.

摘要翻译： 本发明的电流输入发光装置通过使多端子晶体管的四个节点的两个节点之间的电流通过来将与给定视频信号相对应的电流转换为电压，通过短路将电压转换为电流 其他两个节点不同，并将电流提供给发光元件。 阈值校正的电压输入发光装置使多端子晶体管的四个节点的两个节点短路，将阈值电压写入存储电容器，并将与给定视频信号相对应的电压写入存储电容器。 接下来，其他两个节点短路，并将两个节点的电压转换为电流。 然后将电流提供给发光元件。

公开(公告)号：US20050214959A1

公开(公告)日：2005-09-29

申请号：US11030065

申请日：2005-01-07

申请人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda

发明人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda

IPC分类号： G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L21/66 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/02683 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/2026 ,  H01L22/12 ,  H01L27/1214 ,  H01L27/1285 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a semiconductor thin film. includes a highly sensitive inspection method for detecting lateral crystals and a crystallizing method. In the crystallizing method, the time-based pulse width of a laser SXL is modulated and an approximate band-like crystal silicon film SPSI is formed in a desired region while scanning the substrate SUB1 bidirectionally in the X and −X directions. In the inspection method, an inspection beam PRO1 is irradiated to the substrate just after the laser SXL is turned off. A protrusion TOKI will be formed on the silicon film portion where the laser SXL is turned off if the state of the silicon film is that of a lateral crystal SPSI. The inspection beam PRO1 is scattered by the protrusion TOKI and observed by a detector. If the state of the silicon film is granular crystal GGSI or aggregated film AGSI, such a protrusion TOKI is not observed.

摘要翻译： 一种形成半导体薄膜的方法。 包括用于检测横向晶体的高灵敏度检查方法和结晶方法。 在结晶方法中，激光SXL的时间脉冲宽度被调制，并且在X和-X方向双向扫描衬底SUB 1的同时，在所需区域中形成近似带状晶体硅膜SPSI。 在检查方法中，在激光SXL关闭之后，将检查光束PRO 1照射到基板。 如果硅膜的状态是横向晶体SPSI的状态，则在硅膜部分上形成突起TOKI，其中激光SXL截止。 检测光束PRO 1由突出部TOKI散射并由检测器观测。 如果硅膜的状态是粒状晶体GGSI或聚集膜AGSI，则不观察到这样的突起TOKI。

公开(公告)号：US20050170618A1

公开(公告)日：2005-08-04

申请号：US11007188

申请日：2004-12-09

申请人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

发明人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

IPC分类号： G02F1/1368 ,  C30B1/06 ,  G02F1/133 ,  H01L21/20 ,  H01L21/268 ,  H01L21/324 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L21/00 ,  C30B1/00 ,  H01L21/36

CPC分类号： H01L21/02691 ,  C30B1/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)

摘要翻译： 通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。 半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在 与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1： 光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μs。

公开(公告)号：US20050073243A1

公开(公告)日：2005-04-07

申请号：US10602980

申请日：2003-06-24

申请人： Shunpei Yamazaki ,  Takeshi Noda

发明人： Shunpei Yamazaki ,  Takeshi Noda

IPC分类号： H05B33/22 ,  G09F9/30 ,  H01J1/62 ,  H01L27/32 ,  H01L29/786 ,  H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H05B33/04 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  H05B33/26

CPC分类号： H01L27/3246 ,  H01L27/3272 ,  H01L51/0005 ,  H01L51/5218 ,  H01L51/5228 ,  H01L51/5253 ,  H01L51/5284

摘要： In a top emission structure, there has been a problem in that a wiring, a TFT, or the like is provided in regions other than a light emitting region so that light reflected by the wiring reaches eyes of an observer. The present invention prevents light that is reflected by a wire from reaching eyes of an observer by providing a light-absorbing multilayer film (61) in regions other than a light emitting region. Specifically, the light-absorbing multilayer film (61) is used as an upper layer of a partition wall (also called as a bank or a barrier) that covers ends of a first electrode (66b) whereas an organic resin film (67) is used as a lower layer of the partition wall. The partition wall in the present invention is characterized by being a laminate of three or more layers formed of different materials.

摘要翻译： 在顶部发光结构中，存在在发光区域以外的区域中设置布线，TFT等的问题，使得由布线反射的光到达观察者的眼睛。 本发明通过在除了发光区域之外的区域中设置吸光多层膜（61）来防止被电线反射的光到达观察者的眼睛。 具体而言，吸光性多层膜（61）用作覆盖第一电极（66b）的端部的分隔壁（也称为隔堤或隔壁）的上层，有机树脂膜（67）为 用作分隔壁的下层。 本发明的分隔壁的特征在于由不同材料形成的3层以上的层叠体。