利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

105 条记录 (耗时 0.029 秒)

    Optical waveguide, light source module, and optical information processing apparatus
    81.
    发明授权
    Optical waveguide, light source module, and optical information processing apparatus 失效
    光波导，光源模块和光信息处理装置

    公开(公告)号：US07116879B2

    公开(公告)日：2006-10-03

    申请号：US10987387

    申请日：2004-11-12

    申请人： Takahiro Arakida

    发明人： Takahiro Arakida

    IPC分类号： G02B6/10

    CPC分类号： G02B6/122 ,  G02B6/14 ,  G02B6/42

    摘要： The present invention is to provide an optical waveguide capable of allowing a desired incident light to efficiently propagate towards the light emission side and to emit therefrom, and capable of preventing unnecessary incident light from propagating, and in providing a light source module and an optical information processing apparatus using the optical waveguide. The optical waveguide comprises a bonded member of a substrate, a core layer and cladding layers, configured to introduce an incident line coming into the core layer toward a light emission side thereof. A metal layer for preventing the incident light coming into the cladding layer from propagating to the light emission side is formed in a pattern intercepting a sectional plane of light transmission of said cladding layer.

    摘要翻译： 本发明提供一种光波导，其能够使期望的入射光有效地向发光侧传播并从其发射，并且能够防止不必要的入射光传播，并且提供光源模块和光信息 使用该光波导的处理装置。 光波导包括基板的接合构件，芯层和包覆层，被配置为将入射到芯层中的入射线朝向其发光侧引入。 用于防止入射到包层的入射光传播到发光侧的金属层形成为截取所述包层的透光的截面的图案。

    Semiconductor laser device
    82.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US07003009B2

    公开(公告)日：2006-02-21

    申请号：US10382564

    申请日：2003-03-06

    申请人： Takahiro Arakida ,  Hisashi Kudo

    发明人： Takahiro Arakida ,  Hisashi Kudo

    IPC分类号： H01S5/00

    CPC分类号： H01S5/028 ,  H01S5/02461 ,  H01S5/0281

    摘要： An edge-emitting type 650 nm band red semiconductor laser device is provided, which includes a resonator structure having an active layer on a semiconductor substrate. A low reflection three-layer film is provided on an emitting edge face of the resonator structure and a high reflection multi-layer film is provided on a rear edge face of the resonator structure. The low reflection three-layer film is formed by sequentially stacking a first Al203 film having a thickness of 10 nm, a SiN4 film having a thickness of 190 nm, and a second Al203 film having a thickness of 10 nm on the emitting edge face by a sputtering process.

    摘要翻译： 提供了边缘发射型650nm波段红色半导体激光器件，其包括在半导体衬底上具有有源层的谐振器结构。 在谐振器结构的发射边缘面上设置低反射三层膜，并且在谐振器结构的后边缘面上设置高反射多层膜。 低反射三层膜通过以下方式形成：通过在发射边缘面依次堆叠厚度为10nm的第一Al 2 O 3膜，厚度为190nm的SiN 4膜和厚度为10nm的第二Al 2 O 3膜， 溅射工艺。

    Optical waveguide module
    84.
    发明申请
    Optical waveguide module 失效
    光波导模块

    公开(公告)号：US20050047716A1

    公开(公告)日：2005-03-03

    申请号：US10928363

    申请日：2004-08-27

    申请人： Takahiro Arakida ,  Hidehiko Nakata ,  Kenji Suzuki

    发明人： Takahiro Arakida ,  Hidehiko Nakata ,  Kenji Suzuki

    IPC分类号： G02B6/12 ,  G02B6/13 ,  G02B6/42 ,  G02B6/26

    CPC分类号： G02B6/12002 ,  G02B6/13 ,  G02B6/4214

    摘要： An optical waveguide module for easily detecting incident light intensity excelling in high integration, comprising a light emitting portion, a substrate, clad formed on the substrate, and a first core and a second core covered with the clad and formed by a material having a higher refractive index than that of the clad; wherein a first reflection surface is formed as an incident side end portion of the first core for reflecting a light emitted from the light emitting portion to the guiding direction of the first core for optically connecting; a second reflection surface is formed as an incident side end portion of the second core for reflecting a light emitted from the light emitting portion to the guiding direction of the second core for optically connecting; and the light irradiated from the light emitting portion to the incident side end portion of the first core is guided to the guiding direction of the first core and the light irradiated from the light emitting portion to the incident side end portion of the second core is guided to the guiding direction of the second core.

    摘要翻译： 一种用于容易地检测高集成度的入射光强度的光波导模块，包括形成在基板上的发光部分，基板，包层以及被覆层覆盖的第一芯和第二芯，并由具有较高的 折射率高于包层; 其中第一反射表面形成为第一芯的入射侧端部，用于将从发光部发射的光反射到用于光学连接的第一芯的引导方向; 第二反射面形成为第二芯的入射侧端部，用于将从发光部发射的光向第二芯的引导方向反射，以进行光学连接; 并且从发光部照射到第一芯的入射侧端部的光被引导到第一芯的引导方向，并且从发光部照射到第二芯的入射侧端部的光被引导 到第二核心的引导方向。

    Vertical cavity surface emitting laser
    86.
    发明授权
    Vertical cavity surface emitting laser 有权

    公开(公告)号：US08363687B2

    公开(公告)日：2013-01-29

    申请号：US13064788

    申请日：2011-04-15

    申请人： Osamu Maeda ,  Masaki Shiozaki ,  Takahiro Arakida

    发明人： Osamu Maeda ,  Masaki Shiozaki ,  Takahiro Arakida

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18394 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18327 ,  H01S5/18347 ,  H01S5/18358 ,  H01S2301/166 ,  H01S2301/176

    摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.

    Optical device
    87.
    发明授权
    Optical device 有权
    光学装置

    公开(公告)号：US08121445B2

    公开(公告)日：2012-02-21

    申请号：US12457359

    申请日：2009-06-09

    申请人： Terukazu Naruse ,  Takahiro Arakida

    发明人： Terukazu Naruse ,  Takahiro Arakida

    IPC分类号： G02B6/00

    CPC分类号： G02B6/4214 ,  G02B6/4201 ,  G02B6/428 ,  H05K1/0274

    摘要： An optical device includes: a multilayer structure substrate on which plural insulating layers are stacked and a wiring pattern is formed between layers; a recessed part for exposing the wiring pattern between the layers by cutting off a part of the multilayer structure substrate; an optical element mounted within the recessed part in electric conduction to the wiring pattern exposed by the recessed part; and an optical waveguide member forming an optical path for the optical element and guiding light along a surface of the multilayer structure substrate.

    摘要翻译： 光学装置包括：层叠多个绝缘层并且层之间形成布线图案的多层结构基板; 通过切除所述多层结构基板的一部分来露出所述层之间的布线图案的凹部; 安装在所述凹部内的光学元件，导电到由所述凹部暴露的所述布线图案; 以及形成光学元件的光路并沿着多层结构基板的表面引导光的光波导部件。

    Vertical cavity surface emitting laser
    88.
    发明申请
    Vertical cavity surface emitting laser 有权

    公开(公告)号：US20110194579A1

    公开(公告)日：2011-08-11

    申请号：US13064788

    申请日：2011-04-15

    申请人： Osamu Maeda ,  Masaki Shiozaki ,  Takahiro Arakida

    发明人： Osamu Maeda ,  Masaki Shiozaki ,  Takahiro Arakida

    IPC分类号： H01S5/183

    CPC分类号： H01S5/18394 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18327 ,  H01S5/18347 ,  H01S5/18358 ,  H01S2301/166 ,  H01S2301/176

    摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.

    Surface-emitting semiconductor laser and manufacturing method thereof
    89.
    发明申请
    Surface-emitting semiconductor laser and manufacturing method thereof 失效
    表面发射半导体激光器及其制造方法

    公开(公告)号：US20110182315A1

    公开(公告)日：2011-07-28

    申请号：US12926917

    申请日：2010-12-17

    申请人： Masaki Shiozaki ,  Osamu Maeda ,  Takahiro Arakida ,  Susumu Sato

    发明人： Masaki Shiozaki ,  Osamu Maeda ,  Takahiro Arakida ,  Susumu Sato

    IPC分类号： H01S5/24 ,  H01L33/46

    CPC分类号： H01S5/18355 ,  H01S5/18313 ,  H01S5/1833 ,  H01S5/18338 ,  H01S5/18358

    摘要： A manufacturing method of a surface-emitting semiconductor laser includes the steps of: forming a stacked structure having a lower-multilayer film reflector including a lower oxidizable layer having at least one layer, an active layer having a light emitting region, an upper-multilayer film reflector including an upper oxidizable layer and an upper layer on a substrate in this order; providing a first groove in the upper layer; and providing a second groove including a portion overlapping the first groove in a planar shape and a portion not overlapping the first groove in the stacked structure.

    摘要翻译： 表面发射半导体激光器的制造方法包括以下步骤：形成具有下层多层膜反射体的层叠结构，所述下多层膜反射体包括具有至少一层的下部可氧化层，具有发光区域的有源层，上部多层膜 膜反射器，其依次包括基板上的上部可氧化层和上层; 在上层提供第一凹槽; 并且在所述堆叠结构中设置包括与所述第一凹槽重叠的部分的平面形状的第二凹槽和不与所述第一凹槽重叠的部分。