公开(公告)号：US09305787B2

公开(公告)日：2016-04-05

申请号：US14135503

申请日：2013-12-19

申请人： Creator Technology B. V.

发明人： Christoph Wilhelm Sele ,  Monica Johanna Beenhakkers ,  Gerwin Hermanus Gelinck ,  Nicolaas Aldegonda Jan Maria Van Aerle ,  Hjalmar Edzer Ayco Huitema

IPC分类号： H01L21/283 ,  H01L21/311 ,  H01L51/00 ,  H01L27/32 ,  H01L51/05

CPC分类号： H01L21/283 ,  H01L21/31133 ,  H01L27/3244 ,  H01L27/3276 ,  H01L51/0021 ,  H01L51/0533

摘要： A method of manufacturing an electric component disclosed. A first electrically conducting layer including a first electrode of the electric component is formed on a substrate. An interlayer of a dielectric material is formed on the first electrically conducting layer, the dielectric material including an electrically insulating material. A further layer of a dielectric material is deposited on the interlayer of dielectric material, the further layer including a photo-patternable electrically insulating material. Both the further layer and said interlayer are structured, wherein the further layer of the dielectric material is used as a mask for the interlayer. A second electrically conducting layer including a second electrode of the electric component is then formed.

摘要翻译： 公开了一种制造电气部件的方法。 包括电气部件的第一电极的第一导电层形成在基板上。 介电材料的中间层形成在第一导电层上，电介质材料包括电绝缘材料。 电介质材料的另一层沉积在电介质材料的中间层上，另一层包括可光刻图形的电绝缘材料。 另外的层和所述中间层都被构造，其中电介质材料的另一层用作中间层的掩模。 然后形成包括电气部件的第二电极的第二导电层。

公开(公告)号：US09293708B2

公开(公告)日：2016-03-22

申请号：US13526371

申请日：2012-06-18

申请人： Guillermo C. Bazan ,  Lei Ying ,  Ben B. Y. Hsu ,  Wen Wen ,  Hsin-Rong Tseng ,  Gregory C. Welch

发明人： Guillermo C. Bazan ,  Lei Ying ,  Ben B. Y. Hsu ,  Wen Wen ,  Hsin-Rong Tseng ,  Gregory C. Welch

IPC分类号： H01L51/00 ,  C08G61/12 ,  H01L51/05

CPC分类号： H01L51/0036 ,  C08G61/122 ,  C08G61/123 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/148 ,  C08G2261/1646 ,  C08G2261/212 ,  C08G2261/3241 ,  C08G2261/3246 ,  C08G2261/344 ,  C08G2261/414 ,  C08G2261/91 ,  C08G2261/92 ,  H01L51/0043 ,  H01L51/0094 ,  H01L51/0533 ,  H01L51/0545 ,  Y02E10/549

摘要： A method of regioselectively preparing a pyridine-containing compound is provided. In particular embodiments, the method includes reacting halogen-functionalized pyridal[2,1,3]thiadiazole with organotin-functionalized cyclopenta[2,1-b:3,4-b′]dithiophene or organotin-functionalized indaceno[1,2-b:5,6-b′]dithiophene. Also provided is a method of preparing a polymer. The method includes regioselectively preparing a monomer that includes a pyridal[2,1,3]thiadiazole unit; and reacting the monomer to produce a polymer that includes a regioregular conjugated backbone section, wherein the section includes a repeat unit containing the pyridal[2,1,3]thiadiazole unit. A polymer that includes a regioregular conjugated backbone section, and electronic devices that include the polymer, are also provided.

摘要翻译： 提供了一种区域选择性制备含吡啶化合物的方法。 在具体实施方案中，该方法包括使卤素官能化的吡啶并[2,1,3]噻二唑与有机锡官能化的环戊二烯并[2,1-b：3,4-b']二噻吩或有机锡官能化的茚并不是[1,2- b：5,6-b']二噻吩。 还提供了制备聚合物的方法。 该方法包括区域选择性制备包含吡啶并[2,1,3]噻二唑单元的单体; 并使所述单体反应以制备包含区域结构共轭主链部分的聚合物，其中所述部分包括含有所述吡啶并[2,1,3]噻二唑单元的重复单元。 还提供了包括区域性共轭主链部分的聚合物和包括聚合物的电子器件。

公开(公告)号：US09276226B2

公开(公告)日：2016-03-01

申请号：US13111699

申请日：2011-05-19

申请人： Tobin J. Marks ,  Young-geun Ha ,  Antonio Facchetti

发明人： Tobin J. Marks ,  Young-geun Ha ,  Antonio Facchetti

IPC分类号： H01L51/05

CPC分类号： H01L51/0533 ,  H01L21/441 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L51/0053 ,  H01L51/0055 ,  H01L51/0529 ,  H01L51/0537 ,  H01L51/0545 ,  H01L2251/301

摘要： Disclosed are organic-inorganic hybrid self-assembled multilayers that can be used as electrically insulating (or dielectric) materials. These multilayers generally include an inorganic primer layer and one or more bilayers deposited thereon. Each bilayer includes a chromophore or “π-polarizable” layer and an inorganic capping layer composed of zirconia. Because of the regularity of the bilayer structure and the aligned orientation of the chromophore resulting from the self-assembly process, the present multilayers have applications in electronic devices such as thin film transistors, as well as in nonlinear optics and nonvolatile memories.

摘要翻译： 公开了可用作电绝缘（或电介质）材料的有机 - 无机混合自组装多层膜。 这些多层通常包括无机底漆层和沉积在其上的一个或多个双层。 每个双层包括发色团或“＆pgr可极化”层和由氧化锆组成的无机覆盖层。 由于双层结构的规则性和由自组装过程产生的发色团的排列取向，所以本发明的多层膜可用于诸如薄膜晶体管的电子器件，以及非线性光学和非易失性存储器中。

公开(公告)号：US20150179957A1

公开(公告)日：2015-06-25

申请号：US14636921

申请日：2015-03-03

申请人： City University of Hong Kong

发明人： Vellaisamy A. L. Roy ,  Zong-Xiang Xu ,  Paul Kim Ho Chu ,  Tat Kun Kwok

IPC分类号： H01L51/00 ,  H01L51/05 ,  H01L51/10

CPC分类号： H01L51/0083 ,  H01L51/0003 ,  H01L51/0051 ,  H01L51/0084 ,  H01L51/0512 ,  H01L51/0533 ,  H01L51/0558 ,  H01L51/105

摘要： The design and synthesis of six nickel charge transfer (CT) complexes are described herein. The six nickel CT complexes have a nickel center, two organic ligands coordinated with the nickel center to form a dianionic square planar supramolecule and an organic counter-cation as represented by The ligands and counter-cations are selected to optimize properties, such as molecular alignment, film morphology, and molecular packaging. Described herein, the ligands can be 2,3-pyrazinedithiol (L1), 1,2-benzenedithol (L2) or 2,3-quinoxalinedithol (L3) and the counter-cations can be diquat (2,2′-ebpy) or methyl viologen (4,4′-mbpy). The six nickel CT complexes can also be utilized semiconductor devices, such as thin film transistors or inverters. Processes are also provided for the fabrication of semiconductors devices. The processes can include fabricating a substrate with a bilayer octadecylphosphonic acid (ODPA)/Al2O3 dielectric and applying one of the six nickel charge transfer (CT) complexes to the substrate.

摘要翻译： 本文描述了六种镍电荷转移（CT）复合物的设计和合成。 六个镍CT复合物具有镍中心，两个有机配体与镍中心配位以形成二阴离子正方形平面超分子和由“配体”和“反阳离子”所表示的有机抗衡阳离子，以优化特性，如分子对准 ，膜形态和分子包装。 本文描述的配体可以是2,3-吡嗪二硫醇（L1），1,2-苯二酚（L2）或2,3-喹喔啉基二醇（L3），抗衡阳离子可以是二季铵盐（2,2'-ebpy）或 甲基紫精（4,4'-mbpy）。 六个镍CT复合体也可以用于薄膜晶体管或逆变器等半导体器件。 还提供了用于制造半导体器件的工艺。 这些方法可以包括用双层十八烷基膦酸（ODPA）/ Al 2 O 3电介质制造衬底，并将六种镍电荷转移（CT）复合物中的一种施加到衬底上。

公开(公告)号：US08981096B2

公开(公告)日：2015-03-17

申请号：US13097656

申请日：2011-04-29

申请人： Vellaisamy A. L. Roy ,  Zong-Xiang Xu ,  Paul Kim Ho Chu ,  Tat Kun Kwok

发明人： Vellaisamy A. L. Roy ,  Zong-Xiang Xu ,  Paul Kim Ho Chu ,  Tat Kun Kwok

IPC分类号： C07D241/38 ,  H01L51/00 ,  H01L51/05

CPC分类号： H01L51/0083 ,  H01L51/0003 ,  H01L51/0051 ,  H01L51/0084 ,  H01L51/0512 ,  H01L51/0533 ,  H01L51/0558 ,  H01L51/105

摘要： The design and synthesis of six nickel charge transfer (CT) complexes are described herein. The six nickel CT complexes have a nickel center, two organic ligands coordinated with the nickel center to form a dianionic square planar supramolecule and an organic counter-cation as represented by The ligands and counter-cations are selected to optimize properties, such as molecular alignment, film morphology, and molecular packaging. Described herein, the ligands can be 2,3-pyrazinedithiol (L1), 1,2-benzenedithol (L2) or 2,3-quinoxalinedithol (L3) and the counter-cations can be diquat (2,2′-ebpy) or methyl viologen (4,4′-mbpy). The six nickel CT complexes can also be utilized semiconductor devices, such as thin film transistors or inverters. Processes are also provided for the fabrication of semiconductors devices. The processes can include fabricating a substrate with a bilayer octadecylphosphonic acid (ODPA)/Al2O3 dielectric and applying one of the six nickel charge transfer (CT) complexes to the substrate.

摘要翻译： 本文描述了六种镍电荷转移（CT）复合物的设计和合成。 六个镍CT复合物具有镍中心，两个有机配体与镍中心配位以形成二阴离子正方形平面超分子和由“配体”和“反阳离子”所表示的有机抗衡阳离子，以优化特性，如分子对准 ，膜形态和分子包装。 本文描述的配体可以是2,3-吡嗪二硫醇（L1），1,2-苯二酚（L2）或2,3-喹喔啉基二醇（L3），抗衡阳离子可以是二季铵盐（2,2'-ebpy）或 甲基紫精（4,4'-mbpy）。 六个镍CT复合体也可以用于薄膜晶体管或逆变器等半导体器件。 还提供了用于制造半导体器件的工艺。 这些方法可以包括用双层十八烷基膦酸（ODPA）/ Al 2 O 3电介质制造衬底，并将六种镍电荷转移（CT）复合物中的一种施加到衬底上。

公开(公告)号：US20150001513A1

公开(公告)日：2015-01-01

申请号：US14354755

申请日：2013-11-29

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Xianghua Wang ,  Xianfeng Xiong ,  Ze Liu ,  Longzhen Qiu

IPC分类号： H01L51/05 ,  H01L51/00

CPC分类号： H01L51/0533 ,  H01L51/0005 ,  H01L51/0529 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor and a manufacturing method thereof are provided. The organic thin film transistor comprises: a substrate; a gate electrode layer (21) and a source/drain electrode layer (24), formed on the substrate; an organic semiconductor layer (25), formed between source and drain electrodes (24) of the source/drain electrode layer; and an organic insulating layer (23), formed between the gate electrode layer (21) and the organic semiconductor layer (25) and made from an organic polymer material.

摘要翻译： 提供有机薄膜晶体管及其制造方法。 有机薄膜晶体管包括：基板; 形成在所述基板上的栅极电极层（21）和源极/漏极电极层（24） 形成在源极/漏极电极层的源极和漏极之间的有机半导体层（25）; 和形成在栅电极层（21）和有机半导体层（25）之间并由有机聚合物材料制成的有机绝缘层（23）。

公开(公告)号：US20140225096A1

公开(公告)日：2014-08-14

申请号：US14254289

申请日：2014-04-16

申请人： LG DISPLAY CO., LTD.

发明人： Chang Wook Han ,  Jae Yoon Lee

IPC分类号： H01L51/05

CPC分类号： H01L51/0512 ,  H01L51/0533 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor and a method for manufacturing the same is disclosed, which can improve the device properties by decreasing a contact resistance which occurs in a contact area between an organic semiconductor layer and source/drain electrodes. The organic thin film transistor includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes overlapped with both edges of the gate electrode and formed on the gate insulation layer, an organic semiconductor layer formed on the gate insulation layer including the source/drain electrodes, a first adhesive layer having hydrophilic properties formed between the gate insulation layer and the source/drain electrodes, and a second adhesive layer having hydrophobic properties formed between the organic semiconductor layer and the gate insulation layer.

摘要翻译： 公开了一种有机薄膜晶体管及其制造方法，其可以通过降低在有机半导体层和源极/漏极之间的接触区域中发生的接触电阻来提高器件性能。 有机薄膜晶体管包括形成在基板上的栅极电极，形成在栅电极上的栅极绝缘层，与栅极电极的两个边缘重叠并形成在栅极绝缘层上的源极和漏极电极，形成在栅极绝缘层上的有机半导体层 包括源极/漏极的栅极绝缘层，在栅极绝缘层和源极/漏极之间形成的具有亲水性的第一粘合剂层和在有机半导体层和栅极绝缘层之间形成的具有疏水性的第二粘合剂层 。

公开(公告)号：US20140159026A1

公开(公告)日：2014-06-12

申请号：US14130940

申请日：2013-06-05

申请人： PANASONIC CORPORATION

发明人： Yuko Okumoto ,  Akihito Miyamoto

IPC分类号： H01L51/05 ,  H01L27/32

CPC分类号： H01L51/0529 ,  H01L27/3262 ,  H01L27/3274 ,  H01L29/786 ,  H01L51/0004 ,  H01L51/0037 ,  H01L51/004 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2251/5315

摘要： A thin-film transistor including: a gate electrode that is located above a substrate; a gate insulating layer that faces the gate electrode; a partition that defines an opening and has higher liquid repellency than liquid repellency of the gate insulating layer, the opening having a surface of the gate insulating layer therewithin; a semiconductor layer that faces the gate electrode with the gate insulating layer interposed therebetween and is formed within the opening by an application method; a source electrode and a drain electrode that are electrically connected to the semiconductor layer; and an intermediate layer that is made of the same material as a material of the partition and is located between the gate insulating layer and the semiconductor layer, wherein the intermediate layer is discretely present above the gate insulating layer.

摘要翻译： 1.一种薄膜晶体管，包括：位于基板上方的栅电极; 面对栅电极的栅极绝缘层; 限定开口并具有比栅极绝缘层的液体排斥性更高的液体排斥性的隔板，该开口具有栅极绝缘层的表面; 面向栅电极的半导体层，其间具有栅极绝缘层，并通过施加方法形成在开口内; 源电极和漏电极，其电连接到所述半导体层; 以及由与所述隔板的材料相同的材料制成并且位于所述栅极绝缘层和所述半导体层之间的中间层，其中所述中间层离散地存在于所述栅极绝缘层的上方。

公开(公告)号：US08735870B2

公开(公告)日：2014-05-27

申请号：US11644243

申请日：2006-12-22

申请人： Chang Wook Han ,  Jae Yoon Lee

发明人： Chang Wook Han ,  Jae Yoon Lee

IPC分类号： H01L29/08

CPC分类号： H01L51/0512 ,  H01L51/0533 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor and a method for manufacturing the same is disclosed, which can improve the device properties by decreasing a contact resistance which occurs in a contact area between an organic semiconductor layer and source/drain electrodes. The organic thin film transistor includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes overlapped with both edges of the gate electrode and formed on the gate insulation layer, an organic semiconductor layer formed on the gate insulation layer including the source/drain electrodes, a first adhesive layer having hydrophilic properties formed between the gate insulation layer and the source/drain electrodes, and a second adhesive layer having hydrophobic properties formed between the organic semiconductor layer and the gate insulation layer.

摘要翻译： 公开了一种有机薄膜晶体管及其制造方法，其可以通过降低在有机半导体层和源极/漏极之间的接触区域中发生的接触电阻来提高器件性能。 有机薄膜晶体管包括形成在基板上的栅极电极，形成在栅电极上的栅极绝缘层，与栅极电极的两个边缘重叠并形成在栅极绝缘层上的源极和漏极电极，形成在栅极绝缘层上的有机半导体层 包括源极/漏极的栅极绝缘层，在栅极绝缘层和源极/漏极之间形成的具有亲水性的第一粘合剂层和在有机半导体层和栅极绝缘层之间形成的具有疏水性的第二粘合剂层 。

公开(公告)号：US20130270534A1

公开(公告)日：2013-10-17

申请号：US13877441

申请日：2011-10-05

申请人： Do Kyung Hwang ,  Jungbae Kim ,  Canek Fuentes-Hernandez ,  Bernard Kippelen

发明人： Do Kyung Hwang ,  Jungbae Kim ,  Canek Fuentes-Hernandez ,  Bernard Kippelen

IPC分类号： H01L51/05

CPC分类号： H01L51/0529 ,  H01L51/0053 ,  H01L51/0071 ,  H01L51/0533 ,  H01L51/0545

摘要： A field-effect transistor includes a gate, a source and a drain; a semiconductor layer between the source and the drain; and a gate insulator between the gate and the semiconductor layer. The gate insulator comprises a first layer adjoining the semiconductor layer; and a second layer. The first layer is formed from an amorphous fluoropolymer having a first dielectric constant and a first thickness. The second layer has a second dielectric constant and a second thickness. The first dielectric constant is smaller than 3, the first thickness is smaller than 200 nm, the second dielectric constant is higher than 5, and the second thickness is smaller than 500 nm.

摘要翻译： 场效应晶体管包括栅极，源极和漏极; 源极和漏极之间的半导体层; 以及栅极和半导体层之间的栅极绝缘体。 栅极绝缘体包括邻接半导体层的第一层; 和第二层。 第一层由具有第一介电常数和第一厚度的无定形含氟聚合物形成。 第二层具有第二介电常数和第二厚度。 第一介电常数小于3，第一厚度小于200nm，第二介电常数高于5，第二厚度小于500nm。