公开(公告)号：US6150045A

公开(公告)日：2000-11-21

申请号：US153923

申请日：1998-09-16

申请人： Masamichi Saito ,  Toshihiro Kuriyama

发明人： Masamichi Saito ,  Toshihiro Kuriyama

IPC分类号： G11B5/39 ,  H01F10/30 ,  H01F10/32 ,  H01F41/30 ,  H01F41/32 ,  H01L43/08 ,  G11B5/66

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/08 ,  G11B2005/3996 ,  Y10S428/90 ,  Y10T428/1121

摘要： The pinned magnetic layer 2 is composed of a track width region 2' and a dead region 2", the track width region 2' being formed at a spaced apart relation to the bias region 5. Accordingly, magnetization of the track width region 2' is not so strongly affected by the bias region 5, thereby magnetization is fixed along the Y-direction at almost entire region of the track width region 2'. Therefore, the track width region 2' and the free magnetic region are in a crossing relation with each other giving a proper asymmetry in the entire region of the track width region 2'.

摘要翻译： 钉扎磁性层2由轨道宽度区域2'和死区域2“组成，轨道宽度区域2'以与偏置区域5隔开的关系形成。因此，轨道宽度区域2 '不受偏置区域5的强烈影响，从而在轨道宽度区域2'的几乎整个区域沿着Y方向固定磁化。 因此，轨道宽度区域2'和自由磁性区域彼此交叉关系，在轨道宽度区域2'的整个区域中给出适当的不对称性。

公开(公告)号：US6110609A

公开(公告)日：2000-08-29

申请号：US144733

申请日：1998-09-01

申请人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Hiroshi Sakakima

发明人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Hiroshi Sakakima

IPC分类号： G01R33/09 ,  G11B5/147 ,  G11B5/187 ,  G11B5/31 ,  G11B5/39 ,  H01F10/00 ,  H01F10/30 ,  H01F41/18 ,  G11B5/66

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/147 ,  G11B5/1878 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3967 ,  H01F10/00 ,  H01F10/265 ,  H01F10/30 ,  H01F41/18 ,  Y10S428/90 ,  Y10T428/115

摘要： A magnetic thin film includes magnetic crystal grains and a region where an average crystal size of the magnetic crystal grains along a first direction is smaller than an average crystal size of the magnetic crystal grains along a second direction that is orthogonal to the first direction. Magnetization along the first direction is effected by an external magnetic field that is smaller than an external magnetic field for magnetization along the second direction. Thus, excellent characteristics in a high frequency can be obtained.

摘要翻译： 磁性薄膜包括磁性晶粒和沿着第一方向的磁性晶粒的平均晶体尺寸小于沿与第一方向正交的第二方向的磁性晶粒的平均晶体尺寸的区域。 沿着第一方向的磁化是通过外部磁场来实现的，所述外部磁场小于用于沿着第二方向的磁化的外部磁场。 因此，可以获得高频率的优异特性。

公开(公告)号：US5923505A

公开(公告)日：1999-07-13

申请号：US827099

申请日：1997-03-17

申请人： Derek Jan Kroes ,  Marcos M. Lederman ,  Samuel W. Yuan

发明人： Derek Jan Kroes ,  Marcos M. Lederman ,  Samuel W. Yuan

IPC分类号： G11B5/31 ,  G11B5/39 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08

CPC分类号： B82Y25/00 ,  G11B5/3903 ,  H01F10/3268 ,  G11B5/3163 ,  G11B5/3932

摘要： A magnetoresistive (MR) read sensor fabricated on a substrate comprises an MR layer of magnetoresistive material, a soft adjacent layer (SAL) of soft magnetic material, and a manganese-based metallic antiferromagnetic (AFM) layer between the MR layer and the SAL layer. The AFM layer is in direct contact with the SAL layer and is separated from the MR layer by a non-magnetic spacer layer. A non-magnetic texturing layer is disposed between the SAL layer and the substrate. This structure exhibits a much larger pinning field than read sensors using oxide-based antiferromagnets.

摘要翻译： 制造在衬底上的磁阻（MR）读取传感器包括磁阻材料的MR层，软磁材料的软相邻层（SAL）和MR层与SAL层之间的锰基金属反铁磁（AFM）层 。 AFM层与SAL层直接接触，并通过非磁性间隔层与MR层分离。 非磁性纹理层设置在SAL层和衬底之间。 该结构表现出比使用基于氧化物的反铁磁体的读取传感器大得多的钉扎场。

公开(公告)号：US5691865A

公开(公告)日：1997-11-25

申请号：US767461

申请日：1996-12-16

申请人： Mark T. Johnson ,  Friedrich J. A. Den Broeder ,  Jelto W. Smits

发明人： Mark T. Johnson ,  Friedrich J. A. Den Broeder ,  Jelto W. Smits

IPC分类号： G11C11/14 ,  G11B5/00 ,  G11B5/09 ,  G11B5/127 ,  G11B5/245 ,  G11B5/31 ,  G11B5/39 ,  G11B5/465 ,  G11B9/00 ,  G11C11/15 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/00 ,  G11B5/33

CPC分类号： B82Y25/00 ,  G11B5/00 ,  G11B5/127 ,  G11B5/245 ,  G11B5/31 ,  G11B5/3903 ,  G11B5/465 ,  G11C11/15 ,  H01F10/3254 ,  G11B2005/0008

摘要： A device and method for controllably locally altering the magnetization direction in a body of magnetic material, whereby a layer of at least one of non-metallic material and a semi-metallic material is disposed on a surface of the body, on which layer is provided a body of magnetic material having a fixed magnetization direction, whereby both bodies of magnetic material are magnetically coupled across the interposed layer, the nature of this magnetic coupling being locally alterable by means of locally subjecting the layer to a controllable electric field.

摘要翻译： 一种用于可控地局部地改变磁性材料体中的磁化方向的装置和方法，由此将非金属材料和半金属材料中的至少一种的层设置在主体的表面上，在该表面上设置有 具有固定的磁化方向的磁性材料体，由此两个磁性材料体都被磁耦合在插入的层之间，这种磁耦合的性质通过局部地使该层受到可控电场的局部改变。

公开(公告)号：US5688380A

公开(公告)日：1997-11-18

申请号：US730285

申请日：1996-10-15

申请人： Fumihito Koike ,  Naoya Hasegawa

发明人： Fumihito Koike ,  Naoya Hasegawa

IPC分类号： C23C14/08 ,  G11B5/39 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  C23C14/34

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  C23C14/085 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268 ,  H01L43/10 ,  G11B2005/3996 ,  Y10S428/90 ,  Y10T428/1129 ,  Y10T428/1157 ,  Y10T428/1193 ,  Y10T428/12958 ,  Y10T428/26 ,  Y10T428/265

摘要： A giant magnetoresistive material film includes at least two ferromagnetic layers of a NiFe alloy or NiFeCo alloy, which are formed on a substrate through a nonmagnetic layer of Au, Ag, Cu or Cr, wherein magnetization of at lest one of the ferromagnetic layers is pinned by a coercive force increasing layer of .alpha.-Fe.sub.2 O.sub.3 provided adjacent thereto and having a thickness of 200 to 1000 .ANG. so as to increase coercive force of the ferromagnetic layer, and the other ferromagnetic layer has free magnetization so as to produce a change in resistance at a low magnetic field. The present invention also provides a method of producing the giant magnetoresistive material film and a magnetic head provided with the giant magnetoresistive material film.

摘要翻译： 巨磁阻材料薄膜包括NiFe合金或NiFeCo合金的至少两个铁磁层，它们通过Au，Ag，Cu或Cr的非磁性层形成在衬底上，其中至少一个铁磁层的磁化被固定 通过与其相邻设置并具有200〜1000厚度的α-Fe2O3的矫顽力增加层，以增加铁磁层的矫顽力，另一个铁磁层具有自由磁化，从而产生电阻变化 低磁场。 本发明还提供了制造巨磁阻材料膜的方法和设置有巨磁阻材料膜的磁头。

公开(公告)号：US5569544A

公开(公告)日：1996-10-29

申请号：US182614

申请日：1994-01-18

申请人： James M. Daughton

发明人： James M. Daughton

IPC分类号： H01F10/30 ,  G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  G11B5/127 ,  B32B15/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3945 ,  G11B5/3948 ,  H01F10/324 ,  H01F10/325 ,  H01L43/08 ,  H01L43/10 ,  G11B2005/3996 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/1129 ,  Y10T428/12632 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12931

摘要： A magnetoresistive layered structure having on a substrate two or more magnetoresistive, anisotropic ferromagnetic thin-films each two of which are separated by an intermediate layer on a substrate of less than 50 .ANG. thickness formed of a substantially nonmagnetic, conductive alloy having two immiscible components therein. A further component to provide temperature stability in some circumstances is to be at least partially miscible in the first two components. Such structures can be formed as a sensor by having them electrically connected together with one positioned in a gap between magnetic material masses and one shielded by one of such masses.

摘要翻译： 一种磁阻层状结构，在衬底上具有两个或更多个磁阻各向异性铁磁薄膜，每个两个由各向异性的铁磁性薄膜分隔，所述磁阻薄膜由小于50厚度的基底上的中间层分隔开，所述中间层由基本上非磁性的，具有两个不混溶组分的导电合金组成 。 在某些情况下提供温度稳定性的另一组分是在前两种组分中至少部分混溶。 这样的结构可以通过将它们电连接在一起而形成为传感器，其中一个位于磁性材料块之间的间隙中，一个被这种质量之一屏蔽。

公开(公告)号：US5422571A

公开(公告)日：1995-06-06

申请号：US14981

申请日：1993-02-08

申请人： Bruce A. Gurney ,  David E. Heim ,  Haralambos Lefakis ,  Omar U. Need, III ,  Virgil S. Speriosu ,  Dennis R. Wilhoit

发明人： Bruce A. Gurney ,  David E. Heim ,  Haralambos Lefakis ,  Omar U. Need, III ,  Virgil S. Speriosu ,  Dennis R. Wilhoit

IPC分类号： G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  G01R33/02

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996

摘要： A magnetoresistive read sensor based on the spin valve effect in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers is described. The sensor read element includes two adjacent ferromagnetic layers separated by a nonmagnetic metallic layer. A layer of nonmagnetic electrically conductive material is deposited adjacent to and in contact with one of the ferromagnetic layers, referred to as a filter layers to form a back or conduction layer which provides a low resistance path for conduction electrons transmitted through the adjacent filter layer. The thickness of the filter layer is selected such that it effectively blocks conduction electrons having spins antiparallel to the direction of magnetization in the filter layer while allowing conduction electrons with parallel spins to be transmitted through the layer into the adjacent back layer. The magnetization of the filter layer is free to rotate in response to an applied magnetic field thereby effectively varying the electrically resistance to conduction electrons in the back/filter layer. The thickness of the back layer is selected to optimize the sensor parameters being measured and is in a range of about 4.0 A to 1000 A.

摘要翻译： 基于自旋阀效应的磁阻读取传感器，其中读取元件电阻的分量随着两个相邻磁性层中的磁化方向之间的角度的余弦而变化。 传感器读取元件包括由非磁性金属层隔开的两个相邻的铁磁层。 一层非磁性导电材料沉积在一个铁磁层附近并与之接触，被称为过滤层，以形成背面或导电层，该导电层为通过相邻的过滤层传导的传导电子提供低电阻路径。 选择滤光层的厚度，使得其有效地阻挡具有与滤光层中的磁化方向反平行的传导的传导电子，同时允许具有平行自旋的传导电子通过该层传输到相邻的背层中。 过滤层的磁化响应于施加的磁场而自由旋转，从而有效地改变后/过滤层中的传导电子的电阻。 选择背层的厚度以优化被测量的传感器参数，并且在约4.0A至1000A的范围内。

公开(公告)号：US5357389A

公开(公告)日：1994-10-18

申请号：US100212

申请日：1993-08-02

申请人： Curtis N. Blanchette ,  David P. Maddex ,  Richard F. Shimek

发明人： Curtis N. Blanchette ,  David P. Maddex ,  Richard F. Shimek

IPC分类号： C04B41/50 ,  C04B41/87 ,  C23C14/08 ,  G11B5/31 ,  H01F10/20 ,  H01F10/30 ,  H01F41/18 ,  G11B5/235

CPC分类号： C23C14/081 ,  C04B41/5031 ,  C04B41/87 ,  G11B5/31

摘要： A process for sputtering and depositing sputtered alumina uses a mixture of two gases, preferably argon and air, for the deposition phase. No external heat is supplied to the sputtering system during the presputtering, sputter etch and deposition phases of the process. The alumina that is produced is crypto-crystalline and is characterized by crystal size of less than one micron. The alumina is very hard, impervious to attack by acid or base solutions and has improved machining qualities. The alumina is useful as a transducing gap layer in a thin film magnetic head.

摘要翻译： 溅射和沉积溅射氧化铝的方法使用两种气体，优选氩气和空气的混合物进行沉积阶段。 在该方法的预溅射，溅射蚀刻和沉积阶段期间，不向溅射系统提供外部热量。 产生的氧化铝是密晶体，其特征在于小于1微米的晶体尺寸。 氧化铝非常硬，不受酸或碱溶液的侵蚀，并具有改进的加工性能。 氧化铝可用作薄膜磁头中的换能间隙层。

公开(公告)号：US5328523A

公开(公告)日：1994-07-12

申请号：US853735

申请日：1992-05-28

申请人： Jean-Marie Fontaine ,  Arnaud Varoquauz

发明人： Jean-Marie Fontaine ,  Arnaud Varoquauz

IPC分类号： H01F10/13 ,  H01F10/28 ,  H01F10/30 ,  H01F41/20 ,  C21D1/04

CPC分类号： H01F41/20 ,  H01F10/13 ,  H01F10/132 ,  H01F10/28 ,  H01F10/30

摘要： The invention relates to a composite, multilayer magnetic material incorporating at least one thin polymer support film, which is mechanically and thermally strong, coated on at least one of its faces with a thin deposit of an amorphous ferromagnetic compound having a magnetic permeability higher than 30, in which the density d and the permeability of the magnetic material are such that 5.ltoreq..mu./d.ltoreq.100.

摘要翻译： PCT No.PCT / FR90 / 00855 Sec。 371日期：1992年5月28日 102（e）日期1992年5月28日PCT 1990年11月27日PCT PCT。 公开号WO91 / 08577 日期1991年6月13日。本发明涉及一种复合多层磁性材料，其结合有至少一个薄的聚合物支撑膜，其机械和热强，涂覆在其至少一个表面上，其中沉积非晶铁磁性化合物 其磁导率高于30，其中密度d和磁性材料的磁导率为5 / d <100。

公开(公告)号：US5089334A

公开(公告)日：1992-02-18

申请号：US227808

申请日：1988-08-03

申请人： Michael Mallary ,  Harold B. Shukovsky

发明人： Michael Mallary ,  Harold B. Shukovsky

IPC分类号： G01R33/02 ,  G11B5/31 ,  G11B5/33 ,  G11C11/14 ,  H01F3/04 ,  H01F10/30 ,  H01F10/32 ,  H01F41/30 ,  H05K9/00

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/02 ,  G11B5/3113 ,  G11B5/3153 ,  G11B5/332 ,  G11C11/14 ,  H01F10/30 ,  H01F10/32 ,  H01F41/302 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/1186 ,  Y10T428/12465 ,  Y10T428/12597 ,  Y10T428/265

摘要： A method of flux conduction comprising providing a structure with anisotropy not purely in the transverse in-plane direction such that flux spreading into the transverse in-plane direction can occur by rotation.This method of flux conduction is used in magnetic devices having coupled magnetic layers or coupled magnetic domains. Devices disclosed which utilize this method can function as a magnetic recording head, bubble memory, magnetic field structure, magnetic field sensor, transformer, laminated magnetic memory element or magnetic shield.