摘要:
A method for increasing the Seebeck coefficient of a semiconductor involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the Seebeck coefficient of the semiconductor, and recovering the semiconductor with an increased Seebeck coefficient.
摘要:
A ZnX, X is S, Se, Te or a combination thereof, quantum dot preparation method. This method comprises the following steps: dissolving S powder, Se powder, Te powder or a combination thereof into an organic alkali to form a first complex solution; dissolving ZnO into an organic acid and a co-solvent to form a second complex solution; and mixing the first complex solution and the second complex solution to obtain the ZnX quantum dot.
摘要:
A method for the non-catalytic growth of nanowires is provided. The method includes a reaction chamber with the chamber having an inlet end, an exit end and capable of being heated to an elevated temperature. A carrier gas with a flow rate is allowed to enter the reaction chamber through the inlet end and exit the chamber through the exit end. Upon passing through the chamber the carrier gas comes into contact with a precursor which is heated within the reaction chamber. A collection substrate placed downstream from the precursor allows for the formation and growth of nanowires thereon without the use of a catalyst. A second embodiment of the present invention is comprised of a reaction chamber, a carrier gas, a precursor target, a laser beam and a collection substrate. The carrier gas with a flow rate and a gas pressure is allowed to enter the reaction chamber through an inlet end and exit the reaction chamber through the exit end. The laser beam is focused on the precursor target which affords for the evaporation of the precursor material and subsequent formation and growth of nanowires on the collection substrate.
摘要:
A process for synthesizing nanostructures is disclosed. The process involves forming a liquid crystalline template by combining a block copolymer, a first reactant in a polar phase, and a nonpolar phase, then contacting the template with a gas phase composed of a second reactant, under conditions effective to form nanostructures.
摘要:
In the present invention, when hollow polyhedral fine particles consisting of atoms of a first element and atoms of a second element are produced, atoms of the first element and atoms of the second element are structured in a reversed micelle composed of a surfactant. Thereby, hollow polyhedral fine particles can be synthesized by simple and easy procedures.
摘要:
Provided herein are compositions of functionalized, fluorescent nanocrystals comprising fluorescent nanocrystals coated with an imidazole-containing compound; compositions of functionalized, fluorescent nanocrystals comprising fluorescent nanocrystals coated with an imidazole-containing compound and cross-linked with a phosphine cross-linking compound; compositions of functionalized fluorescent nanocrystals operably bound to molecular probe; a process of making functionalized, fluorescent nanocrystals; and a process of using functionalized, fluorescent nanocrystals in a detection system.
摘要:
A gamma radiation source comprising selenium-75 or a precursor therefore, wherein the selenium is provided in the form of one or more thermally stable compounds, alloys, or mixed metal phases.
摘要:
A method of forming a particle comprises the steps of: forming a droplet containing a first material; forming a core portion by heating the droplet to thermally decompose in a reaction vessel; and forming a shell portion which coats the core portion by heating a raw material gas containing a second material which differs from the first material to thermally decompose in the reaction vessel.
摘要:
A colloidal suspension comprising metal chalcogenide nanoparticles and a volatile capping agent. The colloidal suspension is made by reacting a metal salt with a chalcogenide salt in an organic solvent to precipitate a metal chalcogenide, recovering the metal chalcogenide, and admixing the metal chalcogenide with a volatile capping agent. The colloidal suspension is spray deposited onto a substrate to produce a semiconductor precursor film which is substantially free of impurities.
摘要:
Compositions of the formula MX.sub.2 :Y, wherein MX.sub.2 is a layer type transition metal dichalcogenide, M is a metal selected from the group consisting of niobium, tantalum, molybdenum and tungsten, X is a chalcogen selected from the group consisting of sulfur and selenium and Y is a material located between layers of MX.sub.2. The compositions may be prepared by the steps of first forming a suspension of the MX.sub.2 in a body of water. A liquid which is immiscible with water is added to the suspension. The suspension and immiscible liquid are agitated together to form a temporary emulsion. The emulsion is allowed to rest until the water and the liquid separate with an interface therebetween. A sheet-like composition of MX.sub.2 :Y forms at the interface. Preferably, the MX.sub.2 is in exfoliated, singular molecular thickness layers suspended in the water.