公开(公告)号：US11527706B2

公开(公告)日：2022-12-13

申请号：US16027574

申请日：2018-07-05

Applicant: Advanced Material Technologies, Inc.

Inventor： Takeshi Kijima ,  Yasuaki Hamada ,  Yuuji Honda

IPC: H01L41/187 ,  H01L41/047 ,  H01L41/297 ,  H01L41/314 ,  H01L41/083 ,  H01L41/316 ,  H01L41/318 ,  H01L41/08

Abstract: A film structure body has: a substrate that is a silicon substrate including an upper surface composed of a (100) plane; an orientation film including a zirconium oxide film that is cubic crystal (100)-oriented on the upper surface; and a conductive film including a platinum film that is cubic crystal (100)-oriented on the orientation film.

公开(公告)号：US20220181541A1

公开(公告)日：2022-06-09

申请号：US17436294

申请日：2019-12-27

Applicant: Advanced Material Technologies Inc.

Inventor： Takeshi KIJIMA ,  Akio KONISHI

IPC: H01L41/08 ,  H01L41/187 ,  H01L39/12

Abstract: According to the present invention, a piezoelectric film having a single crystal structure is able to be formed, from various piezoelectric materials, on a film structure of the present invention. A film structure according to the present invention includes: a substrate; a buffer film which is formed on the substrate and has a tetragonal crystal structure containing zirconia; a metal film containing a platinum group element, which is formed on the buffer film by means of epitaxial growth; and a film containing Sr(Ti1−x, Rux)O3 (wherein 0≤x≤1), which is formed on the metal film by means of epitaxial growth.

公开(公告)号：US10115888B2

公开(公告)日：2018-10-30

申请号：US15444879

申请日：2017-02-28

Applicant: YOUTEC CO., LTD.

Inventor： Takeshi Kijima ,  Yuuji Honda

IPC: C23C16/40 ,  C23C16/06 ,  H01L41/316 ,  C30B29/68 ,  C30B29/02 ,  C30B29/16 ,  H01L41/08 ,  H01L41/319 ,  C30B23/02 ,  C23C14/18 ,  C23C14/30 ,  C23C14/34 ,  C23C16/48 ,  C30B5/00 ,  C30B23/08 ,  C30B25/10 ,  C30B25/18 ,  C30B29/06 ,  C30B29/32

Abstract: A method for manufacturing a crystal film including: forming a Zr film on a substrate heated to 700° C. or more by a vapor deposition method using a vapor deposition material having a Zr single crystal; forming a ZrO2 film on said Zr film on a substrate heated to 700° C. or more, by a vapor deposition method using said vapor deposition material having a Zr single crystal, and oxygen; and forming a Y2O3 film on said ZrO2 film on a substrate heated to 700° C. or more, by a vapor deposition method using a vapor deposition material having Y, and oxygen.

公开(公告)号：US20190032205A1

公开(公告)日：2019-01-31

申请号：US16142342

申请日：2018-09-26

Applicant: Advanced Material Technologies, Inc.

Inventor： Yuuji HONDA ,  Takayuki Abe

IPC: C23C16/44 ,  B01J2/00 ,  C23C16/442 ,  H01J37/32 ,  C23C16/26 ,  B01J2/12

Abstract: A plasma CVD apparatus efficiently coats the surfaces of fine particles with a thin film or super-fine particles by concentrating a plasma near the fine particles. The plasma CVD apparatus includes a chamber, a container disposed in the chamber for housing the fine particles, the container having a polygonal inner shape in a cross section substantially perpendicular to a longitudinal axis of the container, a ground shielding member for shielding a surface of the container other than a housing face, a rotation mechanism for causing the container to rotate or act as a pendulum on an axis of rotation substantially perpendicular to the cross section, an opposed electrode disposed in the container so as to face the housing face, a plasma power source electrically connected to the container, a gas introducing mechanism for introducing a raw gas into the container, and an evacuation mechanism for evacuating the chamber.

公开(公告)号：US20190123257A1

公开(公告)日：2019-04-25

申请号：US16096077

申请日：2017-05-31

Applicant: ADVANCED MATERIAL TECHNOLOGIES INC.

Inventor： Takeshi KIJIMA

IPC: H01L41/083 ,  C23C14/08 ,  C23C14/58 ,  C30B23/02 ,  C30B29/22 ,  C30B33/02 ,  C23C14/34 ,  H01L41/047 ,  H01L41/187 ,  H01L41/316 ,  H01L41/29 ,  H01L41/27

Abstract: A film structure (10) includes a substrate (11), a piezoelectric film (14) formed on the substrate (11) and containing first composite oxide represented by a composition formula Pb(Zr1−xTix)O3, and a piezoelectric film (15) formed on the piezoelectric film (14) and containing second composite oxide represented by a composition formula Pb(Zr1−yTiy)O3. In the composition formulae, x satisfies 0.10

公开(公告)号：US10243134B2

公开(公告)日：2019-03-26

申请号：US14963359

申请日：2015-12-09

Applicant: Advanced Material Technologies, Inc.

Inventor： Takeshi Kijima ,  Yasuaki Hamada ,  Takeshi Nomura

IPC: H01L41/187 ,  H01L41/08 ,  H01L41/047 ,  H01L41/318

Abstract: An object is to cause a piezoelectric film to perform a piezoelectric operation at a higher voltage than the conventional piezoelectric film. An aspect of the present invention is a piezoelectric film, wherein a voltage at which a piezoelectric butterfly curve that is a result obtained by measuring a piezoelectric property of a piezoelectric film takes a minimum value is larger by 2 V or more than a coercive voltage of a hysteresis curve that is a result obtained by measuring a hysteresis property of said piezoelectric film. The piezoelectric film includes an anti-ferroelectric film, and a ferroelectric film formed on the anti-ferroelectric film.

公开(公告)号：US10115887B2

公开(公告)日：2018-10-30

申请号：US14543024

申请日：2014-11-17

Applicant: ADVANCED MATERIAL TECHNOLOGIES, INC.

Inventor： Takeshi Kijima ,  Yuuji Honda ,  Yukinori Tani

IPC: C04B35/491 ,  H01L41/187 ,  H01L41/319 ,  H01L41/08 ,  H01L41/318

Abstract: An aspect of the present invention relates to ferroelectric ceramics including a stacked film formed on a Si substrate, a Pt film formed on the stacked film, a SrTiO3 film formed on the Pt film, and a PZT film formed on the SrTiO3, wherein the stacked film is formed by repeating sequentially N times a first ZrO2 film and a Y2O3 film, and a second ZrO2 film is formed on the film formed repeatedly N times, the N being an integer of 1 or more. It is preferable that a ratio of Y/(Zr+Y) of the stacked film is 30% or less.

公开(公告)号：US10657999B2

公开(公告)日：2020-05-19

申请号：US15319149

申请日：2014-06-20

Applicant: Advanced Material Technologies, Inc.

Inventor： Kouji Abe ,  Toshiyuki Watanabe ,  Masafumi Tanaka ,  Kohei Okudaira ,  Hiroyasu Sekino ,  Yuuji Honda

IPC: G11B5/85 ,  C23C16/503 ,  G11B5/84 ,  H01J37/32 ,  C23C16/26 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  G11B5/72

Abstract: A plasma CVD device includes a chamber (102), an anode (104), a cathode (103), a holding portion which holds a substrate to be deposited (101) a plasma wall (88) an anti-adhesion member (91) which is arranged between a first gap (81) between the anode and the plasma wall and a first inner surface (102a) of the chamber and a pedestal (92) which is arranged between the anti-adhesion member and a back surface of the anode and which is electrically connected to the anode. The maximum diameter of each of the first gap, a second gap (82) between the anode and the anti-adhesion member, a third gap (83) between the back surface of the anode and the pedestal, a fourth gap (84) between the plasma wall and the anti-adhesion member and a fifth gap (85) between the anti-adhesion member and the pedestal is equal to or less than 4 mm.

公开(公告)号：US10854808B2

公开(公告)日：2020-12-01

申请号：US14886138

申请日：2015-10-19

Applicant: Advanced Material Technologies, Inc.

Inventor： Takeshi Kijima

IPC: C23C14/35 ,  H01L41/187 ,  C23C14/08 ,  H01L41/318 ,  C23C14/56 ,  C23C28/04 ,  C23C14/02

Abstract: Ferroelectric ceramics including: a Pb(Zr1-BTiB)O3 seed crystal film formed on a foundation film; and a Pb(Zr1-xTix)O3 crystal film, wherein: the seed crystal film is formed by sputtering while the foundation film is being disposed on an upper side of a sputtering target and the foundation film is being made to face the sputtering target; in the seed crystal film, a Zr/Ti ratio on the crystal film side from the center in the thickness direction thereof is larger than a Zr/Ti ratio on the foundation film side from the center in the thickness direction thereof; the crystal film is crystallized by coating and heating a solution containing, in an organic solvent, a metal compound wholly or partially containing ingredient metals of the crystal film and a partial polycondensation product thereof; and the B and the x satisfy formulae 2 and 3, respectively, below, 0.1

公开(公告)号：US10125421B2

公开(公告)日：2018-11-13

申请号：US12865788

申请日：2008-02-06

Applicant: Yuuji Honda ,  Takayuki Abe

Inventor： Yuuji Honda ,  Takayuki Abe

IPC: C23C16/50 ,  C23C16/44 ,  B01J2/00 ,  B01J2/12 ,  C23C16/26 ,  C23C16/442 ,  H01J37/32

Abstract: A plasma CVD apparatus efficiently coats the surfaces of fine particles with a thin film or super-fine particles by concentrating a plasma near the fine particles. The plasma CVD apparatus includes a chamber, a container disposed in the chamber for housing the fine particles, the container having a polygonal inner shape in a cross section substantially perpendicular to a longitudinal axis of the container, a ground shielding member for shielding a surface of the container other than a housing face, a rotation mechanism for causing the container to rotate or act as a pendulum on an axis of rotation substantially perpendicular to the cross section, an opposed electrode disposed in the container so as to face the housing face, a plasma power source electrically connected to the container, a gas introducing mechanism for introducing a raw gas into the container, and an evacuation mechanism for evacuating the chamber.