公开(公告)号：US12113321B1

公开(公告)日：2024-10-08

申请号：US18368200

申请日：2023-09-14

申请人： Napra Co., Ltd.

发明人： Shigenobu Sekine

IPC分类号： H01R4/58 ,  H01B1/02 ,  H01R13/03

CPC分类号： H01R4/58 ,  H01B1/026 ,  H01R13/03

摘要： According to this invention, provided is a terminal having a plating layer formed on a surface of a base, the plating layer having a structure in which an intermetallic compound crystal that contains Sn, Cu, Cr and Ni, is dispersed in a parent phase that contains Sn and an Sn—Cu alloy.

公开(公告)号：US20220219265A1

公开(公告)日：2022-07-14

申请号：US17145838

申请日：2021-01-11

申请人： NAPRA CO., LTD.

发明人： Shigenobu SEKINE

IPC分类号： B23K35/02 ,  B23K35/26

摘要： According to this invention, provided is a metal particle that includes an intermetallic compound composed of Sn, Cu and Ni, in a basal phase that contains Sn and an Sn—Cu alloy, and at least parts of the Sn—Cu alloy and the intermetallic compound in the basal phase form an endotaxial joint.

公开(公告)号：US20210078111A1

公开(公告)日：2021-03-18

申请号：US16571799

申请日：2019-09-16

申请人： NAPRA CO., LTD.

发明人： Shigenobu SEKINE

IPC分类号： B23K35/26 ,  C22C13/00 ,  C22C9/02 ,  C22C1/04 ,  C22C1/02 ,  B23K35/30 ,  B23K35/02 ,  B22F9/08

摘要： Disclosed is a metal particle that includes Cu and Sn, the metal particle having a metal matrix composed of Sn—Cu alloy, and a nano-sized intermetallic compound composed of Cu and Sn, and the metal particle having at least inside thereof an alloyed structure in which the metal matrix and the intermetallic compound form an endotaxial junction.

公开(公告)号：US10478924B2

公开(公告)日：2019-11-19

申请号：US16000202

申请日：2018-06-05

申请人： NAPRA CO., LTD.

发明人： Shigenobu Sekine

IPC分类号： B22F1/00 ,  B23K35/02 ,  B22F1/02 ,  C22C13/00 ,  H01L23/00 ,  B23K35/26 ,  B23K35/30 ,  C22C9/02 ,  H01B1/22 ,  H01B1/02 ,  H01B1/04

摘要： An electro-conductive paste includes a metal particle and a vehicle in which the metal particle is dispersed. The metal particle has a particle size in a range from 1 μm to 20 μm and consists of an outer shell and a core part. The core part contains Sn or a Sn alloy. The outer shell contains an intermetallic compound of Sn and Cu and covers 50% or more of a total surface area of the core part.

公开(公告)号：US09730325B2

公开(公告)日：2017-08-08

申请号：US14155709

申请日：2014-01-15

申请人： NAPRA CO., LTD.

发明人： Shigenobu Sekine ,  Yurina Sekine ,  Kazutoshi Kamibayashi

IPC分类号： H05K1/00 ,  H05K1/16 ,  H05K1/03 ,  H05K3/40

CPC分类号： H05K1/165 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K1/162 ,  H05K1/167 ,  H05K3/4061 ,  H05K2201/086 ,  H01L2924/00

摘要： A substrate with built-in passive element includes passive elements and a substrate. The passive elements include at least one of a capacitor, an inductor, a resistor, a signal transmission element or an optical waveguide element. The capacitor, the inductor, the resistor, the signal transmission element or the optical waveguide element has a functional element filled in a groove-like or hole-like element forming region provided in the substrate along a thickness direction thereof. The functional element has a Si—O bond region obtained by reacting Si particles with an organic Si compound.

公开(公告)号：US09685394B2

公开(公告)日：2017-06-20

申请号：US13106933

申请日：2011-05-13

申请人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

发明人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

IPC分类号： H01L33/62 ,  H01L21/28 ,  H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L2224/13 ,  H01L2224/16146 ,  H01L2224/81 ,  H01L2924/09701 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/00

摘要： An electronic device includes a semiconductor substrate, an insulating material-filled layer and a vertical conductor. The semiconductor substrate has a vertical hole extending in a thickness direction thereof. The insulating material-filled layer is a ring-shaped layer filled in the vertical hole for covering an inner periphery thereof and includes an organic insulating material or an inorganic insulating material mainly of a glass and a nanocomposite ceramic. The nanocomposite ceramic has a specific resistance of greater than 1014 Ω·cm at room temperature and a relative permittivity of 4 to 9. The vertical conductor is a solidified metal body filled in an area surrounded by the insulating material-filled layer.

公开(公告)号：US08758900B2

公开(公告)日：2014-06-24

申请号：US12801195

申请日：2010-05-27

申请人： Shigenobu Sekine ,  Yurina Sekine

发明人： Shigenobu Sekine ,  Yurina Sekine

IPC分类号： B22F1/00 ,  C01B33/02 ,  B22F9/08

CPC分类号： B22F9/06 ,  B22F1/0085 ,  B22F9/002 ,  B22F9/08 ,  B22F9/082 ,  B22F2009/084 ,  B22F2009/0844 ,  B22F2998/00 ,  B22F2998/10 ,  B22F2999/00 ,  C01G1/00 ,  C01P2002/60 ,  C01P2002/90 ,  C01P2004/32 ,  Y10T428/12181 ,  Y10T428/2982 ,  B22F2201/11 ,  B22F2201/013 ,  B22F2201/02 ,  B22F2201/03 ,  B22F2201/30 ,  B22F9/10 ,  B22F2202/13

摘要： The present invention provides nanometer-size spherical particles. Each of the particles is made of at least one selected from the group consisting of a metal, an alloy, and a metal compound. The particles include one or both of a polycrystalline region and a single-crystalline region. The particles have a particle size of less than 1 μm; and a sphericity of −10% to +10%.

摘要翻译： 本发明提供了纳米尺寸的球形颗粒。 每个颗粒由选自金属，合金和金属化合物的至少一种制成。 颗粒包括多晶区域和单晶区域中的一个或两个。 颗粒的粒径小于1μm; 和球形度为-10％至+ 10％。

公开(公告)号：US08415784B2

公开(公告)日：2013-04-09

申请号：US12789590

申请日：2010-05-28

申请人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana ,  Ryuji Kimura

发明人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana ,  Ryuji Kimura

IPC分类号： H01L23/52 ,  H01L21/768 ,  H01L23/48

CPC分类号： H05K13/0465 ,  H01B3/025 ,  H01B3/10 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/6616 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/1131 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/812 ,  H01L2224/8181 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01066 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/8384

摘要： An electronic device includes a plurality of stacked substrates. Each of the substrates includes a semiconductor substrate, a columnar conductor, and a ring-shaped insulator. The columnar conductor extends along a thickness direction of the semiconductor substrate. The ring-shaped insulator includes an inorganic insulating layer mainly composed of a glass. The inorganic insulating layer fills a ring-shaped groove that is provided in the semiconductor substrate to surround the columnar conductor.

摘要翻译： 电子设备包括多个堆叠的基板。 每个基板包括半导体基板，柱状导体和环形绝缘体。 柱状导体沿半导体衬底的厚度方向延伸。 环状绝缘体包括主要由玻璃构成的无机绝缘层。 无机绝缘层填充设置在半导体衬底中以围绕柱状导体的环形槽。

公开(公告)号：US08377565B2

公开(公告)日：2013-02-19

申请号：US13084847

申请日：2011-04-12

申请人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

发明人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

IPC分类号： B22F7/00 ,  B32B15/01

CPC分类号： H01L21/76898 ,  H01L21/76882 ,  H01L2924/0002 ,  Y10T428/12014 ,  Y10T428/12028 ,  Y10T428/12493 ,  Y10T428/12535 ,  Y10T428/12632 ,  H01L2924/00

摘要： A filling material includes a support base member and a metal layer, the metal layer including a first metal layer and a second metal layer and being disposed on one side of the support base member, the first metal layer being an aggregate of nano metal particles and having a film thickness enabling melting at a temperature lower than a melting point, the second metal layer being an aggregate of metal particles having a lower melting point than the first metal layer.

摘要翻译： 填充材料包括支撑基底构件和金属层，所述金属层包括第一金属层和第二金属层，并且设置在所述支撑基底构件的一侧，所述第一金属层是纳米金属颗粒的聚集体， 具有能够在低于熔点的温度下熔化的膜厚度，所述第二金属层是具有比所述第一金属层低的熔点的金属颗粒的聚集体。

公开(公告)号：US20110284912A1

公开(公告)日：2011-11-24

申请号：US13106933

申请日：2011-05-13

申请人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

发明人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

IPC分类号： H01L33/62 ,  H01L21/28

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L2224/13 ,  H01L2224/16146 ,  H01L2224/81 ,  H01L2924/09701 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/00

摘要： An electronic device includes a semiconductor substrate, an insulating material-filled layer and a vertical conductor. The semiconductor substrate has a vertical hole extending in a thickness direction thereof. The insulating material-filled layer is a ring-shaped layer filled in the vertical hole for covering an inner periphery thereof and includes an organic insulating material or an inorganic insulating material mainly of a glass and a nanocomposite ceramic. The nanocomposite ceramic has a specific resistance of greater than 1014 Ω·cm at room temperature and a relative permittivity of 4 to 9. The vertical conductor is a solidified metal body filled in an area surrounded by the insulating material-filled layer.

摘要翻译： 电子设备包括半导体衬底，绝缘材料填充层和垂直导体。 半导体衬底具有沿其厚度方向延伸的垂直孔。 绝缘材料填充层是填充在用于覆盖其内周的垂直孔中的环状层，并且包括主要由玻璃和纳米复合陶瓷组成的有机绝缘材料或无机绝缘材料。 纳米复合陶瓷在室温下的电阻率大于1014＆OHgr·cm，相对介电常数为4〜9。垂直导体是填充在被绝缘材料填充层包围的区域中的凝固金属体。