Light-emitting device comprising vertical conductors and through electrodes and method for manufacturing the same
    1.
    发明授权
    Light-emitting device comprising vertical conductors and through electrodes and method for manufacturing the same 有权
    包括垂直导体和贯通电极的发光装置及其制造方法

    公开(公告)号:US08766312B2

    公开(公告)日:2014-07-01

    申请号:US13276475

    申请日:2011-10-19

    IPC分类号: H01L33/00

    摘要: A light-emitting device includes a light-emitting element and a support substrate. The light-emitting element has an insulating layer and first and second vertical conductors passing through the insulating layer. The support substrate has a substrate part and first and second through electrodes and is disposed on the insulating layer. The first through electrode passes through the substrate part with one end connected to an opposing end of the first vertical conductor, while the second through electrode passes through the substrate part with one end connected to an opposing end of the second vertical conductor. The opposing ends of the first and second vertical conductors are projected from a surface of the insulating layer and connected to the ends of the first and second through electrode inside the support substrate.

    摘要翻译: 发光装置包括发光元件和支撑基板。 发光元件具有绝缘层和穿过绝缘层的第一和第二垂直导体。 支撑基板具有基板部分和第一和第二贯通电极,并且设置在绝缘层上。 第一贯通电极通过基板部分,其一端连接到第一垂直导体的相对端,而第二贯穿电极通过基板部分,其一端连接到第二垂直导体的相对端。 第一和第二垂直导体的相对端从绝缘层的表面突出并且连接到支撑衬底内的第一和第二穿透电极的端部。

    Light-emitting diode, light-emitting device, lighting apparatus, display, and signal light
    4.
    发明授权
    Light-emitting diode, light-emitting device, lighting apparatus, display, and signal light 有权
    发光二极管,发光装置,照明装置,显示器和信号灯

    公开(公告)号:US07842958B1

    公开(公告)日:2010-11-30

    申请号:US12753418

    申请日:2010-04-02

    IPC分类号: H01L29/18

    CPC分类号: H01L33/382

    摘要: A light-emitting diode includes a substrate, a semiconductive light-emitting layer, and electrodes. The semiconductive light-emitting layer is deposited on one side of the substrate. The electrodes are composed of a conductive material filled in pores leading to the semiconductive light-emitting layer through the substrate. The semiconductive light-emitting layer includes sequentially deposited n-type and p-type semiconductive layers. The electrodes include n-side and p-side electrodes. One of the n-side and p-side electrodes penetrates through one of the n-type and p-type semiconductive layers, which is disposed closer to the substrate but not targeted for connection, and terminates with a tip thereof located within the other semiconductive layer. The other of the n-side and p-side electrodes penetrates through the substrate from the other side opposite to the one side of the substrate and terminates with a tip thereof located within the one semiconductive layer disposed closer to the substrate.

    摘要翻译: 发光二极管包括基板,半导体发光层和电极。 半导体发光层沉积在衬底的一侧。 电极由填充在通过基板通向半导体发光层的孔中的导电材料构成。 半导体发光层包括顺序沉积的n型和p型半导体层。 电极包括n侧和p侧电极。 n侧和p侧电极中的一个穿过n型和p型半导体层之一,n型和p型半导体层设置得更靠近衬底而不是连接的目的,并且其端部位于另一半导电层内 层。 n侧和p侧电极中的另一个从与衬底的一侧相反的另一侧穿过衬底,并且其末端位于设置在更靠近衬底的一个半导体层内。