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公开(公告)号：US11158371B2
公开(公告)日：2021-10-26
申请号：US16956630
申请日：2018-12-13
IPC分类号： G11C11/24 , G11C14/00 , G11C11/4074 , G11C11/4076 , G11C11/4096 , G11C11/56 , H01L27/12
摘要： A novel memory device is provided.
The memory device including a plurality of memory cells arranged in a matrix, and each of the memory cells includes a transistor and a capacitor. The transistor includes a first gate and a second gate, which include a region where they overlap with each other with a semiconductor layer therebetween. The memory device has a function of operating in a “writing mode”, a “reading mode”, a “refresh mode”, and an “NV mode”. In the “refresh mode”, data retained in the memory cell is read, and then the read data is written to the memory cell again for first time. In the “NV mode”, data retained in the memory cell is read, the read data is written to the memory cell again for second time, and then a potential at which the transistor is turned off is supplied to the second gate. The “NV mode” operation enables data to be stored for a long time even when power supply to the memory cell is stopped. The memory cell can store multilevel data.-
公开(公告)号：US11152397B2
公开(公告)日：2021-10-19
申请号：US16690804
申请日：2019-11-21
发明人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC分类号： H01L27/12 , H01L27/32 , G02F1/1362 , H01L27/02 , H01L29/786
摘要： A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
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公开(公告)号：US11137651B2
公开(公告)日：2021-10-05
申请号：US17082094
申请日：2020-10-28
IPC分类号： G02F1/1362 , G02F1/1333 , G02F1/1343
摘要： To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.
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公开(公告)号：US11177373B2
公开(公告)日：2021-11-16
申请号：US16344177
申请日：2017-10-25
IPC分类号： H01L29/66 , H01L29/786 , H01L51/00 , H01L27/12 , H01L27/32
摘要： A semiconductor device is manufactured with high mass productivity at low cost. Yield in a manufacturing process of the semiconductor device is improved. An island-shaped metal oxide layer is formed over a substrate, a resin layer is formed over the metal oxide layer to cover an end portion of the metal oxide layer, and the metal oxide layer and the resin layer are separated by light irradiation. After forming the resin layer and before the light irradiation, an insulating layer is formed over the resin layer. For example, the resin layer is formed in an island shape and the insulating layer is formed to cover an end portion of the resin layer. In the case where an adhesive layer is formed over the resin layer, the adhesive layer is preferably formed to be located inward from the end portion of the metal oxide layer.
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公开(公告)号：US11139327B2
公开(公告)日：2021-10-05
申请号：US16591983
申请日：2019-10-03
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Hikaru Tamura , Munehiro Kozuma , Masataka Ikeda , Takeshi Aoki
IPC分类号： H01L27/146 , H04N5/374 , H04N5/378 , H01L29/786 , H01L31/105 , H04N5/361
摘要： In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.
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公开(公告)号：US11137813B2
公开(公告)日：2021-10-05
申请号：US16288934
申请日：2019-02-28
IPC分类号： G06F1/32 , G06F1/3287 , G06G7/00
摘要： The power consumption of an analog arithmetic circuit is reduced. The analog arithmetic circuit includes a plurality of first circuits. An output terminal of the k-th (k is a natural number) first circuit is connected to an input terminal of the k+1-th first circuit. Each of the first circuits includes a memory circuit which holds an analog signal, a second circuit which performs arithmetic processing using the analog signal, a switch which controls power supply to the second circuit, and a controller. The conduction state of the switch included in the k-th first circuit is controlled by the controller included in the k+1-th first circuit. The arithmetic processing performed by the second circuit included in the k+1-th first circuit is started by the controller included in the k+1-th first circuit.
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公开(公告)号：US11153980B2
公开(公告)日：2021-10-19
申请号：US17084810
申请日：2020-10-30
摘要： A light-emitting device can be folded in such a manner that a flexible light-emitting panel is supported by a plurality of housings which are provided spaced from each other and the light-emitting panel is bent so that surfaces of adjacent housings are in contact with each other. Furthermore, in the light-emitting device, in which part or the whole of the housings have magnetism, the two adjacent housings can be fixed to each other by a magnetic force when the light-emitting device is used in a folded state.
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公开(公告)号：US11143925B2
公开(公告)日：2021-10-12
申请号：US16925535
申请日：2020-07-10
发明人： Hajime Kimura , Atsushi Umezaki
IPC分类号： G02F1/1362 , G09G3/00 , G09G3/36 , G02F1/1368 , H01L27/12 , H01L29/786 , G02F1/167 , G02F1/1333 , G02F1/1339 , G02F1/1343 , H01L29/423
摘要： An object is to provide a display device that performs accurate display. A circuit is formed using a transistor that includes an oxide semiconductor and has a low off-state current. A precharge circuit or an inspection circuit is formed in addition to a pixel circuit. The off-state current is low because the oxide semiconductor is used. Thus, it is not likely that a signal or voltage is leaked in the precharge circuit or the inspection circuit to cause defective display. As a result, a display device that performs accurate display can be provided.
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公开(公告)号：US11140775B2
公开(公告)日：2021-10-05
申请号：US16598203
申请日：2019-10-10
发明人： Naoyuki Senda , Yuichi Yanagisawa
摘要： To provide a circuit board in which a curvature of a display surface can be controlled, or to provide a highly portable circuit board. A circuit board includes a substrate with flexibility and a curvature control mechanism. The curvature control mechanism includes a first electromagnet and a second electromagnet provided over a first surface of the substrate, an insulating film provided over the first and second electromagnets, and wirings electrically connected to the first and second electromagnets.
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公开(公告)号：US11139359B2
公开(公告)日：2021-10-05
申请号：US15296270
申请日：2016-10-18
发明人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Rihito Wada , Yoko Chiba
IPC分类号： H01L27/32 , H01L29/786 , H01L27/12 , H01L51/52
摘要： A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.
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