SYSTEMS AND METHODS FOR FORMING SOLAR CELLS WITH CuInSe2 AND Cu(In,Ga)Se2 FILMS
    1.
    发明申请
    SYSTEMS AND METHODS FOR FORMING SOLAR CELLS WITH CuInSe2 AND Cu(In,Ga)Se2 FILMS 有权
    用CuInSe2和Cu(In,Ga)Se2膜形成太阳能电池的系统和方法

    公开(公告)号:US20150079724A1

    公开(公告)日:2015-03-19

    申请号:US14382106

    申请日:2013-02-27

    摘要: Systems and methods for forming solar cells with CuInSe2 and Cu(In,Ga)Se2 films are provided. In one embodiment, a method comprises: during a first stage (220), performing a mass transport through vapor transport of an indium chloride (InClx) vapor (143, 223) and Se vapor (121, 225) to deposit a semiconductor film (212, 232, 252) upon a substrate (114, 210, 230, 250); heating the substrate (114, 210, 230, 250) and the semiconductor film to a desired temperature (112); during a second stage (240) following the first stage (220), performing a mass transport through vapor transport of a copper chloride (CuClx) vapor (143, 243) and Se vapor (121, 245) to the semiconductor film (212, 232, 252); and during a third stage (260) following the second stage (240), performing a mass transport through vapor transport of an indium chloride (InClx) vapor (143, 263) and Se vapor (121, 265) to the semiconductor film (212, 232, 252).

    摘要翻译: 提供了用CuInSe2和Cu(In,Ga)Se2膜形成太阳能电池的系统和方法。 在一个实施方案中,一种方法包括:在第一阶段(220)期间,通过氯化铟(InClx)蒸气(143,223)和Se蒸气(121,225)的蒸气传输进行质量传输以沉积半导体膜 212,232,252)在衬底(114,210,230,250)上; 将所述衬底(114,210,230,250)和所述半导体膜加热至所需温度(112); 在第一阶段(220)之后的第二阶段(240)期间,通过将氯化铜(CuClx)蒸气(143,243)和Se蒸气(121,245)的蒸气输送进行到半导体膜 232,252); 并且在第二阶段(240)之后的第三阶段(260)期间,通过将氯化铟(InClx)蒸气(143,263)和Se蒸气(121,265)的蒸气传输进行到半导体膜(212)的质量传输 ,232,252)。

    METHODS FOR IMPROVING PEROVSKITE SOLAR CELLS

    公开(公告)号:US20240315062A1

    公开(公告)日:2024-09-19

    申请号:US18604365

    申请日:2024-03-13

    IPC分类号: H10K30/82 H10K30/40

    CPC分类号: H10K30/82 H10K30/40

    摘要: The present disclosure relates to a device that includes a first metal oxide layer having a first thickness, a second metal oxide layer having a second thickness, and a base layer having a third thickness, where the first metal oxide layer is positioned between the base layer and the second metal oxide layer, at least one of the base layer and/or the first metal oxide layer includes a carbon-containing material, and at least one of a carbon concentration gradient and/or an oxygen concentration gradient is present across at least one of a portion of the first thickness and/or a portion of the third thickness. In some embodiments of the present disclosure, the first metal oxide layer may be permeable to an oxygen-containing compound. In some embodiments of the present disclosure, the oxygen-containing compound may include at least one of O3, N2O, and/or H2O2.

    Visually undistorted thin film electronic devices

    公开(公告)号:US12075639B2

    公开(公告)日:2024-08-27

    申请号:US18164834

    申请日:2023-02-06

    摘要: Visually undistorted thin film electronic devices are provided. In one embodiment, a method for producing a thin-film electronic device comprises: opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, the stack comprising at least one active semiconductor layer. The active region comprises a non-scribed area of the stack and the inactive region comprises a region of the stack where thin film material was removed by the scribe. The method further comprises depositing at least one scribe fill material into a gap opened by the scribe. The scribe fill material has embedded therein one or more coloring elements that alter an optical characteristics spectrum of the inactive region to obtain an optical characteristics spectrum of the active region within a minimum perceptible difference for an industry defined standard observer.