公开(公告)号：US20090035913A1

公开(公告)日：2009-02-05

申请号：US11832995

申请日：2007-08-02

申请人： Lijie Bao ,  Zhigang Rick Li ,  Damien F. Reardon ,  James F. Ryley ,  Cengiz Ahmet Palanduz

发明人： Lijie Bao ,  Zhigang Rick Li ,  Damien F. Reardon ,  James F. Ryley ,  Cengiz Ahmet Palanduz

IPC分类号： H01L21/20

CPC分类号： H01G4/1227 ,  H01G4/12 ,  H01L21/31691 ,  H01L28/55 ,  H05K1/162 ,  H05K3/1291 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0355 ,  H05K2203/1105 ,  H05K2203/1126

摘要： Deposited thin-film dielectrics having columnar grains and high dielectric constants are formed on heat treated and polished metal foil. The sputtered dielectrics are annealed at low oxygen partial pressures.

摘要翻译： 在热处理和抛光的金属箔上形成具有柱状晶粒和高介电常数的沉积的薄膜电介质。 溅射电介质在低氧分压下进行退火。

公开(公告)号：US07841075B2

公开(公告)日：2010-11-30

申请号：US11765113

申请日：2007-06-19

申请人： William Borland ,  Daniel I. Amey, Jr. ,  Karl H. Dietz ,  Cengiz Ahmet Palanduz ,  J. Stan Erickson

发明人： William Borland ,  Daniel I. Amey, Jr. ,  Karl H. Dietz ,  Cengiz Ahmet Palanduz ,  J. Stan Erickson

IPC分类号： H05K3/20

CPC分类号： H05K1/162 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2924/15311 ,  H05K3/1291 ,  H05K3/4602 ,  H05K3/4652 ,  H05K2201/0175 ,  H05K2201/0355 ,  H05K2201/09481 ,  H05K2201/09518 ,  H05K2201/09718 ,  H05K2201/09763 ,  H05K2203/1126 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49128

摘要： Provided herein are devices comprising a printed wiring board that comprise, singulated capacitors fabricated from known good, thin-film, fired-on-foil capacitors. Provided are methods of incorporating the singulated capacitors into the build-up layers of a printed wiring board to minimize impedance. The singulated capacitors have a pitch that allows each power and ground terminal of an IC to be directly connected to a power and ground electrode, respectively, of its own singulated capacitor. Using a feedstock of known good, fired-on-foil capacitors allows for improved PWB yield.

摘要翻译： 本文提供了包括印刷线路板的器件，其包括由已知的良好的薄膜，片上电容器电容器制成的单个电容器。 提供了将单个电容器并入印刷线路板的积层中以最小化阻抗的方法。 单片电容器具有允许IC的每个电源和接地端子分别直接连接到其自己的单个电容器的电源和接地电极的间距。 使用已知的良好的烧结箔电容器的原料允许改进的PWB产量。

公开(公告)号：US20090238955A1

公开(公告)日：2009-09-24

申请号：US12404511

申请日：2009-03-16

申请人： Juan Carlos Figueroa ,  Zhigang Rick Li ,  Cengiz Ahmet Palanduz ,  Damien Francis Reardon ,  Lei Zhang

发明人： Juan Carlos Figueroa ,  Zhigang Rick Li ,  Cengiz Ahmet Palanduz ,  Damien Francis Reardon ,  Lei Zhang

IPC分类号： B05D5/12

CPC分类号： C23C18/1216 ,  C23C18/1225 ,  C23C18/1241 ,  C23C18/1279 ,  C23C18/1295

摘要： Provided are processes for the manufacture of capacitors. It is found that by using a nickel foil as the substrate and one electrode of the capacitor and by controlling the oxygen partial pressure in the range of 10−8 to 10−10 atmospheres during the crystallization heat treatment of the barium titanate, the leakage current can be maintained at adequate values without a reoxygenation step.

摘要翻译： 提供了用于制造电容器的工艺。 发现通过使用镍箔作为基板和电容器的一个电极，并且在钛酸钡的结晶热处理期间通过将氧分压控制在10-8至10-10大气压的范围内，泄漏电流 可以维持在足够的值，而不需要再氧化步骤。

公开(公告)号：US06815256B2

公开(公告)日：2004-11-09

申请号：US10329190

申请日：2002-12-23

申请人： David Gregory Figueroa ,  Dong Zhong ,  Yuan-Liang Li ,  Jiangqi He ,  Cengiz Ahmet Palanduz

发明人： David Gregory Figueroa ,  Dong Zhong ,  Yuan-Liang Li ,  Jiangqi He ,  Cengiz Ahmet Palanduz

IPC分类号： H01L2144

CPC分类号： H01L23/49827 ,  H01L23/481 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/3011 ,  H01L2224/0401

摘要： An improved silicon building block is disclosed. In an embodiment, the silicon building block has at least two vias through it. The silicon building block is doped and the vias filled with a first material, and, optionally, selected ones of the vias filled instead with a second material. In an alternative embodiment, regions of the silicon building block have metal deposited on them.

摘要翻译： 公开了一种改进的硅结构单元。 在一个实施例中，硅结构块具有通过其的至少两个通孔。 硅结构单元被掺杂，并且通孔填充有第一材料，并且可选地，填充了选定的通孔，而不是用第二材料填充。 在替代实施例中，硅积层的区域具有沉积在其上的金属。

公开(公告)号：US20090238954A1

公开(公告)日：2009-09-24

申请号：US12051931

申请日：2008-03-20

申请人： SEIGI SUH ,  Esther Kim ,  William Borland ,  Cengiz Ahmet Palanduz

发明人： SEIGI SUH ,  Esther Kim ,  William Borland ,  Cengiz Ahmet Palanduz

IPC分类号： B05D5/12 ,  H01G7/00 ,  H05K3/30

CPC分类号： H01G4/1227 ,  H01G4/33 ,  H05K1/162 ,  H05K3/1291 ,  H05K2201/0175 ,  H05K2201/0355 ,  H05K2203/1126 ,  Y10T29/43 ,  Y10T29/4913

摘要： Disclosed are a method of making a dielectric on a metal foil, and a method of making a large area capacitor that includes a dielectric on a metal foil. A dielectric precursor layer and the base metal foil are prefired at a prefiring temperature in the range of 350 to 650° C. in a moist atmosphere that also comprises a reducing gas. The prefired dielectric precursor layer and base metal foil are subsequently fired at a firing temperature in the range of 700 to 1200° C. in an atmosphere having an oxygen partial pressure of less than about 10−6 atmospheres to produce a dielectric. The area of the capacitor made according to the disclosed method may be greater than 10 mm2, and subdivided to create a multiple individual capacitor units that may be embedded in printed wiring boards. The dielectric is typically comprised of crystalline barium titanate or crystalline barium strontium titanate.

摘要翻译： 公开了一种在金属箔上制造电介质的方法，以及制造在金属箔上包括电介质的大面积电容器的方法。 在包含还原气体的潮湿气氛中，在350〜650℃的预热温度下，预烧电介质前体层和基体金属箔。 随后在具有小于约10 -6个大气压的氧气分压的气氛中，在700至1200℃范围内的烧制温度下烧制预烧电介质前体层和基底金属箔，以产生电介质。 根据所公开的方法制造的电容器的面积可以大于10mm 2，并且被细分以产生可以嵌入印刷线路板的多个单独的电容器单元。 电介质通常由结晶钛酸钡或结晶的钛酸钡锶组成。

公开(公告)号：US20080316723A1

公开(公告)日：2008-12-25

申请号：US11765113

申请日：2007-06-19

申请人： William Borland ,  Daniel Irwin Amey, JR. ,  Karl Hartmann Dietz ,  Cengiz Ahmet Palanduz ,  J. Stan Erickson

发明人： William Borland ,  Daniel Irwin Amey, JR. ,  Karl Hartmann Dietz ,  Cengiz Ahmet Palanduz ,  J. Stan Erickson

IPC分类号： H05K1/16 ,  H01S4/00

CPC分类号： H05K1/162 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2924/15311 ,  H05K3/1291 ,  H05K3/4602 ,  H05K3/4652 ,  H05K2201/0175 ,  H05K2201/0355 ,  H05K2201/09481 ,  H05K2201/09518 ,  H05K2201/09718 ,  H05K2201/09763 ,  H05K2203/1126 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49128

摘要： Provided herein are devices comprising a printed wiring board that comprise, singulated capacitors fabricated from known good, thin-film, fired-on-foil capacitors. Provided are methods of incorporating the singulated capacitors into the build-up layers of a printed wiring board to minimize impedance. The singulated capacitors have a pitch that allows each power and ground terminal of an IC to be directly connected to a power and ground electrode, respectively, of its own singulated capacitor. Using a feedstock of known good, fired-on-foil capacitors allows for improved PWB yield.

摘要翻译： 本文提供了包括印刷线路板的器件，其包括由已知的良好的薄膜，片上电容器电容器制成的单个电容器。 提供了将单个电容器并入印刷线路板的积层中以最小化阻抗的方法。 单片电容器具有允许IC的每个电源和接地端子分别直接连接到其自己的单个电容器的电源和接地电极的间距。 使用已知的良好的烧结箔电容器的原料允许改进的PWB产量。

公开(公告)号：US07205638B2

公开(公告)日：2007-04-17

申请号：US10931497

申请日：2004-08-31

申请人： David Gregory Figueroa ,  Dong Zhong ,  Yuan-Liang Li ,  Jiangqi He ,  Cengiz Ahmet Palanduz

发明人： David Gregory Figueroa ,  Dong Zhong ,  Yuan-Liang Li ,  Jiangqi He ,  Cengiz Ahmet Palanduz

IPC分类号： H01L29/40

CPC分类号： H01L23/49827 ,  H01L23/481 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/3011 ,  H01L2224/0401

摘要： An improved silicon building block is disclosed. In an embodiment, the silicon building block has at least two vias through it. The silicon building block is doped and the vias filled with a first material, and, optionally, selected ones of the vias filled instead with a second material. In an alternative embodiment, regions of the silicon building block have metal deposited on them.

摘要翻译： 公开了一种改进的硅结构单元。 在一个实施例中，硅结构块具有通过其的至少两个通孔。 硅结构单元被掺杂，并且通孔填充有第一材料，并且可选地，填充了选定的通孔，而不是用第二材料填充。 在替代实施例中，硅积层的区域具有沉积在其上的金属。

公开(公告)号：US07818855B2

公开(公告)日：2010-10-26

申请号：US11868736

申请日：2007-10-08

申请人： William Borland ,  Cengiz Ahmet Palanduz ,  Olga L. Renovales

发明人： William Borland ,  Cengiz Ahmet Palanduz ,  Olga L. Renovales

IPC分类号： H01G7/00

CPC分类号： H01G4/33 ,  H05K1/162 ,  H05K3/1291 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0355 ,  H05K2203/1126 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49204

摘要： Methods of making thin film capacitors formed on foil by forming onto a thin film dielectric in a single deposition event an integrally complete top electrode having a minimum thickness of at least 1 micron.

摘要翻译： 通过在单个沉积事件中在薄膜电介质上形成具有至少1微米的最小厚度的整体完整的顶部电极来形成薄膜电容器的方法。

公开(公告)号：US20110311718A1

公开(公告)日：2011-12-22

申请号：US12968328

申请日：2010-12-15

申请人： Cengiz Ahmet Palanduz ,  Allan Beikmohamadi ,  Juan Carlos Figueroa ,  David Ross McGregor ,  Damien Francis Reardon ,  Richard Ray Traylor

发明人： Cengiz Ahmet Palanduz ,  Allan Beikmohamadi ,  Juan Carlos Figueroa ,  David Ross McGregor ,  Damien Francis Reardon ,  Richard Ray Traylor

IPC分类号： B05D5/12

CPC分类号： H01G4/33 ,  B82Y30/00 ,  C04B35/4682 ,  C04B35/6264 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2235/6582 ,  C04B2235/6584 ,  C04B2235/661 ,  C04B2235/781 ,  C04B2235/785 ,  C23C18/1216 ,  C23C18/1275 ,  C23C18/1283 ,  H01G4/1227 ,  H05K1/0231 ,  H05K1/162 ,  H05K2201/0175 ,  H05K2201/0355 ,  H05K2203/1194

摘要： Disclosed is a method of making a thin-film dielectric, comprising providing a base metal foil, forming a barium titanate-based dielectric precursor layer over a base metal foil, pre-annealing the dielectric precursor layer and base metal foil, rapidly heating the pre-annealed dielectric precursor layer from a temperature of less than 530° C. to an annealing temperature of more than 800° C. in less than 15 seconds; and annealing the dielectric to form a crystalline barium titanate-based dielectric on the base metal foil, wherein the crystalline barium titanate-based dielectric has grains with an average grain size that is greater or equal to 50 nanometers. Also disclosed is a method of making a capacitor comprised of the thin-film dielectric formed on a base metal foil according to the method described above with a second conductive layer formed over the dielectric.

摘要翻译： 公开了一种制造薄膜电介质的方法，包括提供基底金属箔，在基底金属箔上形成钛酸钡基电介质前体层，对电介质前体层和基底金属箔进行预退火，快速加热前体 从小于530℃的温度到大于800℃的退火温度在少于15秒内的退火电介质前体层; 并且在所述基底金属箔上退火所述电介质以形成结晶的钛酸钡基电介质，其中所述结晶钛酸钡基电介质具有平均晶粒尺寸大于或等于50纳米的晶粒。 还公开了一种制造电容器的方法，所述电容器由根据上述方法形成在基底金属箔上的薄膜电介质组成，并且在电介质上形成第二导电层。

公开(公告)号：US20080112110A1

公开(公告)日：2008-05-15

申请号：US11868736

申请日：2007-10-08

申请人： William Borland ,  Cengiz Ahmet Palanduz ,  Olga L. Renovales

发明人： William Borland ,  Cengiz Ahmet Palanduz ,  Olga L. Renovales

IPC分类号： H01G4/005 ,  H01R43/16

CPC分类号： H01G4/33 ,  H05K1/162 ,  H05K3/1291 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0355 ,  H05K2203/1126 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49204

摘要： Methods of making thin film capacitors formed on foil by forming onto a thin film dielectric in a single deposition event an integrally complete top electrode having a minimum thickness of at least 1 micron.

摘要翻译： 通过在单个沉积事件中在薄膜电介质上形成具有至少1微米的最小厚度的整体完整的顶部电极来形成薄膜电容器的方法。