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    Light-emitting device including a connection layer formed on a side surface thereof
    1.
    发明授权
    Light-emitting device including a connection layer formed on a side surface thereof 有权
    发光装置，其包括在其侧表面上形成的连接层

    公开(公告)号：US08735932B2

    公开(公告)日：2014-05-27

    申请号：US13253515

    申请日：2011-10-05

    申请人： Tae-hyung Kim ,  Cheol-soo Sone ,  Jong-in Yang ,  Sang-yeob Song ,  Si-hyuk Lee

    发明人： Tae-hyung Kim ,  Cheol-soo Sone ,  Jong-in Yang ,  Sang-yeob Song ,  Si-hyuk Lee

    IPC分类号： H01L33/36

    CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0066

    摘要： An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.

    摘要翻译： LED包括具有第一和第二化合物层和有源层的化合物半导体结构，位于第二化合物半导体层顶部并连接到各个化合物层的第一和第二电极层。 绝缘层涂覆在不同于第一和第二电极层所在的区域中。 导电性粘合剂层形成在非导电性基板的顶部，将其连接到第一电极层和绝缘层。 形成在非导电性基板的一个侧面上的粘合层是与导电性粘合剂层连接的第一电极连接层。 形成在另一个侧表面上的第二电极连接层连接到第二电极层。 通过在发光装置的相应侧表面上形成连接层，可以降低制造成本。

    Nitride-based semiconductor light-emitting device and method of manufacturing the same
    4.
    发明申请
    Nitride-based semiconductor light-emitting device and method of manufacturing the same 有权
    氮化物系半导体发光元件及其制造方法

    公开(公告)号：US20070202624A1

    公开(公告)日：2007-08-30

    申请号：US11649237

    申请日：2007-01-04

    申请人： Suk-ho Yoon ,  Cheol-soo Sone ,  Jeong-wook Lee ,  Joo-sung Kim

    发明人： Suk-ho Yoon ,  Cheol-soo Sone ,  Jeong-wook Lee ,  Joo-sung Kim

    IPC分类号： H01L21/00

    CPC分类号： H01L33/22 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L2933/0016

    摘要： A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the operations of sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer.

    摘要翻译： 提供一种具有改善结构以提高光提取效率的氮化物基半导体发光器件及其制造方法。 该方法包括在衬底上依次形成n包覆层，有源层和p覆盖层的操作; 在所述p覆盖层的上表面上形成多个掩模点; 在所述掩模点之间的所述p覆盖层的部分上形成具有粗糙表面的p接触层; 通过干蚀刻从p接触层的上表面的一部分形成与p接触层的粗糙形状相同的粗糙形状的n包覆层的粗糙的n接触表面到期望的深度 n覆层; 在粗糙的n接触面上形成n电极; 以及在p-接触层上形成p电极。

    Red phosphor and method of preparing the same, and red light emitting diode, white light emitting diode, and active dynamic liquid crystal device using the red phosphor
    6.
    发明授权
    Red phosphor and method of preparing the same, and red light emitting diode, white light emitting diode, and active dynamic liquid crystal device using the red phosphor 有权
    红色荧光粉及其制备方法，以及红色发光二极管，白色发光二极管和使用红色荧光体的有源动态液晶装置

    公开(公告)号：US07459846B2

    公开(公告)日：2008-12-02

    申请号：US10976875

    申请日：2004-11-01

    申请人： Yun-chan Kang ,  Jae-hee Cho ,  Cheol-soo Sone

    发明人： Yun-chan Kang ,  Jae-hee Cho ,  Cheol-soo Sone

    IPC分类号： H01J1/62 ,  H01J63/04

    CPC分类号： C09K11/7783 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2924/181 ,  Y02B20/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： Provided is a red phosphor represented by formula 1: (Li(2-z)-xMx)(MoO4)y:Euz,Smq  (1) where M is an element selected from K, Mg, Na, Ca, Sr, and Ba, 0≦x≦2, 0.5≦y≦5, 0.01≦z≦1.5, and 0.001≦q≦1.0. The red phosphor has emission characteristics such as high brightness when excited by, in particular, an excitation light source of around 405 nm. The red phosphor is 6 times brighter than conventional phosphors. Furthermore, the red phosphor can be used in a red light emitting diode (LED) that has a UV excitation light source, a white LED, and an active dynamic liquid crystal device (LCD). In addition, the white LED using the red phosphor has a color rendering index of 90 or greater and so has excellent color rendition.

    摘要翻译： （Li（2-z）-xMx）（MoO4）y：Euz，Smq（式（1））表示的红色荧光体：＆lt;？in-line-formula description =“In-line Formulas”end =“lead” （1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中M是选自K，Mg，Na，Ca，Sr和Ba的元素，0 <= x < = 2，0.5 <= y <= 5，0.01 <= z <= 1.5，0.001 <= q <= 1.0。 当由特别是约405nm的激发光源激发时，红色荧光体具有诸如高亮度的发射特性。 红色荧光体比常规荧光体亮6倍。 此外，红色荧光体可以用于具有UV激发光源，白色LED和有源动态液晶装置（LCD）的红色发光二极管（LED）中。 此外，使用红色荧光体的白色LED的显色指数为90以上，因此具有优异的色彩再现性。

    Light emitting diodes and display apparatuses using the same
    7.
    发明申请
    Light emitting diodes and display apparatuses using the same 有权
    发光二极管及使用其的显示装置

    公开(公告)号：US20080204626A1

    公开(公告)日：2008-08-28

    申请号：US11711877

    申请日：2007-02-28

    申请人： Jae-hee Cho ,  Martin Schubert ,  E. Fred Schubert ,  Jong-kyu Kim ,  Cheol-soo Sone

    发明人： Jae-hee Cho ,  Martin Schubert ,  E. Fred Schubert ,  Jong-kyu Kim ,  Cheol-soo Sone

    IPC分类号： G02F1/1335 ,  H01L33/00

    CPC分类号： H01L33/46 ,  G02F1/133603 ,  G02F1/13362 ,  H01L33/405

    摘要： In a light emitting diode, a first semiconductor layer supplies electrons, and a second semiconductor layer supplies holes. An active layer is formed between the first and second semiconductor layers. The active layer receives electrons and holes, and emits light in response to coupling between the electrons and the holes. A first reflective layer is formed on a bottom portion of the first semiconductor layer, and a second reflective layer is formed on a top portion of the second semiconductor layer. The light emitted from the active layer exits toward a side of the active layer.

    摘要翻译： 在发光二极管中，第一半导体层供应电子，第二半导体层提供空穴。 在第一和第二半导体层之间形成有源层。 有源层接收电子和空穴，并且响应于电子和孔之间的耦合而发光。 第一反射层形成在第一半导体层的底部，第二反射层形成在第二半导体层的顶部。 从有源层发射的光朝向有源层的一侧离开。

    Polarized light emitting diode and method of forming the same
    8.
    发明申请
    Polarized light emitting diode and method of forming the same 有权
    极化发光二极管及其形成方法

    公开(公告)号：US20080054283A1

    公开(公告)日：2008-03-06

    申请号：US11797003

    申请日：2007-04-30

    申请人： Bok-ki Min ,  Cheol-soo Sone

    发明人： Bok-ki Min ,  Cheol-soo Sone

    IPC分类号： H01L33/00

    CPC分类号： H01L33/44

    摘要： Example embodiments are directed to a polarized light emitting diode and method of forming the same. The polarized light emitting diode may include a support layer, a semiconductor layer structure, and/or a polarization control layer. The semiconductor layer structure may be formed on the support layer and may include a light-emitting layer. The polarization control layer may be formed on the semiconductor layer structure and may include a plurality of metal nanowires. The polarized light emitting diode may be configured to control the polarization of emitted light. The method of forming a polarized light emitting diode may include forming on a substrate a semiconductor layer structure with a light emitting layer. A reflecting layer may be formed on the semiconductor layer structure with an attached support layer. The substrate may be removed from the semiconductor layer structure and a polarization control layer including metal nanowires may be formed on the semiconductor layer structure.

    摘要翻译： 示例性实施例涉及一种偏振发光二极管及其形成方法。 偏振发光二极管可以包括支撑层，半导体层结构和/或偏振控制层。 半导体层结构可以形成在支撑层上，并且可以包括发光层。 偏光控制层可以形成在半导体层结构上，并且可以包括多个金属纳米线。 偏振发光二极管可以被配置为控制发射光的偏振。 形成偏振发光二极管的方法可以包括在衬底上形成具有发光层的半导体层结构。 可以在具有附接的支撑层的半导体层结构上形成反射层。 可以从半导体层结构去除衬底，并且可以在半导体层结构上形成包括金属纳米线的偏振控制层。