公开(公告)号：US07906425B2

公开(公告)日：2011-03-15

申请号：US11581122

申请日：2006-10-13

申请人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen ,  Wen-Chang Kuo ,  Yue-Ying Jian

发明人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen ,  Wen-Chang Kuo ,  Yue-Ying Jian

IPC分类号： H01L21/00

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10T29/49144 ,  Y10T29/49146 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49179 ,  H01L2924/00014 ,  H01L2924/00

摘要： A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF4 and SF6, and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.

摘要翻译： 一种方法，包括提供包括接合焊盘的半导体器件和覆盖在焊盘上的凸块下金属。 在凸块下冶金上形成焊料结构，其中焊料结构包括包含氧化锡的外层。 从CF4和SF6中的至少一种制造等离子体，并将焊料结构暴露于等离子体。 加热焊料结构并对其进行冷却以在半导体器件上提供焊料凸块。

公开(公告)号：US07276454B2

公开(公告)日：2007-10-02

申请号：US10286626

申请日：2002-11-02

申请人： Kai-Ming Ching ,  Chia Fu Lin ,  Wen-Hsiang Tseng ,  Ta-Min Lin ,  Yen-Ming Chen ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Li-Chih Chen

发明人： Kai-Ming Ching ,  Chia Fu Lin ,  Wen-Hsiang Tseng ,  Ta-Min Lin ,  Yen-Ming Chen ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Li-Chih Chen

IPC分类号： H01L21/302

CPC分类号： H01L23/544 ,  H01L21/76838 ,  H01L24/11 ,  H01L24/12 ,  H01L2223/54453 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05671 ,  H01L2224/05124 ,  H01L2224/05147

摘要： A new method is provided for the processing of metals, most notably copper, such that damage to exposed surfaces of these metals is prevented. During a step of semiconductor processing, which results in exposing a metal surface to a wet substance having a pH value, a voltage is applied to the metal that is exposed. The value of the applied voltage can, dependent on the value of the pH constant of the wet substance, be selected such that the exposed metal surface is protected against alkaline effects of the wet substance.

摘要翻译： 提供了一种新的方法来处理金属，特别是铜，以防止这些金属暴露表面的损坏。 在半导体加工的步骤中，导致将金属表面暴露于具有pH值的湿物质的步骤中，向暴露的金属施加电压。 施加电压的值可以根据湿物质的pH常数的值来选择，使得暴露的金属表面被保护免受湿物质的碱性影响。

公开(公告)号：US06715524B2

公开(公告)日：2004-04-06

申请号：US10164987

申请日：2002-06-07

申请人： Li-Chen Chen ,  Chia-Tsun Hsu ,  Chia-Fu Lin ,  Kuo-Ching Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Hsin-Hui Lee ,  Chao-Yuan Su

发明人： Li-Chen Chen ,  Chia-Tsun Hsu ,  Chia-Fu Lin ,  Kuo-Ching Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Hsin-Hui Lee ,  Chao-Yuan Su

IPC分类号： B44C1165

CPC分类号： B29C63/02 ,  B65H37/002 ,  B65H2301/51122 ,  G03F7/161 ,  H01L21/67132 ,  Y10T156/1189 ,  Y10T156/1705 ,  Y10T156/1712

摘要： A DFR laminating and PET removing system which is capable of both laminating a dry film resist (DFR) layer on a semiconductor wafer and removing a DFR support film such as polyethylene terepthalate (PET) from the DFR layer on the wafer at a single location. The DFR laminating and PET removing system of the present invention comprises a PET support film removing head for removing a portion of PET film from the semiconductor wafer substrate after the PET film portion and dry film resist (DFR) portion are laminated from a DFR tape onto the wafer and before the DFR portion is cut from the DFR tape.

摘要翻译： DFR层压和PET去除系统，其能够在半导体晶片上层压干膜抗蚀剂（DFR）层，并且在单个位置从晶片上的DFR层除去DFR载体膜如聚对苯二甲酸乙二醇酯（PET）。 本发明的DFR层压和PET去除系统包括一个PET支撑膜去除头，用于在将PET膜部分和干膜抗蚀剂（DFR）部分从DFR带层压到 晶片和DFR部分之前从DFR磁带切割。

公开(公告)号：US08497584B2

公开(公告)日：2013-07-30

申请号：US10810965

申请日：2004-03-26

申请人： Yen-Ming Chen ,  Chia-Fu Lin ,  Shun-Liang Hsu ,  Kai-Ming Ching ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Li-Chih Chen

发明人： Yen-Ming Chen ,  Chia-Fu Lin ,  Shun-Liang Hsu ,  Kai-Ming Ching ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Li-Chih Chen

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11912 ,  H01L2224/13006 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00014

摘要： A new method is provided for the creation of a solder bump. Conventional methods are initially followed, creating a patterned layer of Under Bump Metal over the surface of a contact pad. A layer of photoresist is next deposited, this layer of photoresist is patterned and developed creating a resist mask having a T-shape opening aligned with the contact pad. This T-shaped opening is filled with a solder compound, creating a T-shaped layer of solder compound on the surface of the layer of UBM. The layer of photoresist is removed, exposing the created T-shaped layer of solder compound, further exposing the layer of UBM. The layer of UBM is etched using the T-shaped layer of solder compound as a mask. Reflow of the solder compound results in creating a solder ball.

摘要翻译： 提供了一种创建焊料凸块的新方法。 最初遵循常规方法，在接触垫的表面上形成凹凸金属图案层。 随后沉积一层光致抗蚀剂，该光致抗蚀剂层被图案化和显影，产生具有与接触焊盘对准的T形开口的抗蚀剂掩模。 该T形开口填充有焊料化合物，在UBM层的表面上形成T形焊料化合物层。 去除光致抗蚀剂层，暴露所生成的T形焊料化合物层，进一步暴露UBM层。 使用焊料化合物的T形层作为掩模蚀刻UBM层。 焊料复合物的回流导致产生焊球。

公开(公告)号：US07134199B2

公开(公告)日：2006-11-14

申请号：US10170745

申请日：2002-06-13

申请人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen ,  Wen-Chang Kuo ,  Yue-Ying Jian

发明人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen ,  Wen-Chang Kuo ,  Yue-Ying Jian

IPC分类号： H01R9/00 ,  H05K3/00

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10T29/49144 ,  Y10T29/49146 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49179 ,  H01L2924/00014 ,  H01L2924/00

摘要： A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF4 and SF6, and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.

摘要翻译： 一种方法，包括提供包括接合焊盘的半导体器件和覆盖在焊盘上的凸块下金属。 在凸块下冶金上形成焊料结构，其中焊料结构包括包含氧化锡的外层。 从CF 4和SF 6 6中的至少一个生成等离子体，并将焊料结构暴露于等离子体。 加热焊料结构并对其进行冷却以在半导体器件上提供焊料凸块。

公开(公告)号：US06805279B2

公开(公告)日：2004-10-19

申请号：US10184182

申请日：2002-06-27

申请人： Hsin-Hui Lee ,  Chia-Fu Lin ,  Chao-Yuan Su ,  Yeng-Ming Chen ,  Kai-Ming Chin ,  Li-Chi Chen ,  Hao-Chih Tien

发明人： Hsin-Hui Lee ,  Chia-Fu Lin ,  Chao-Yuan Su ,  Yeng-Ming Chen ,  Kai-Ming Chin ,  Li-Chi Chen ,  Hao-Chih Tien

IPC分类号： B23K3102

CPC分类号： B23K1/008 ,  H01L21/4853 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H05K3/3489 ,  H01L2924/00 ,  H01L2224/05099

摘要： A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF4, SF4, and H2 and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.

摘要翻译： 一种方法，包括提供包括接合焊盘的半导体器件和覆盖在焊盘上的凸块下金属。 在凸块下冶金上形成焊料结构，其中焊料结构包括包含氧化锡的外层。 从CF4，SF4和H2中的至少一种生成等离子体，并将焊料结构暴露于等离子体。 加热焊料结构并对其进行冷却以在半导体器件上提供焊料凸块。

公开(公告)号：US06602775B1

公开(公告)日：2003-08-05

申请号：US09930677

申请日：2001-08-16

申请人： Yen-Ming Chen ,  Chia-Fu Lin ,  Kai-Ming Ching ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Li-Chi Chen

发明人： Yen-Ming Chen ,  Chia-Fu Lin ,  Kai-Ming Ching ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Li-Chi Chen

IPC分类号： H01L2144

CPC分类号： H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/11472 ,  H01L2224/11474 ,  H01L2224/11912 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05005 ,  H01L2224/05541

摘要： A method of fabricating a solder bump including the following steps. A UBM over a substrate.having an exposed pad portion is provided. The UBM being in electrical contact with the pad portion. A first patterning layer is formed over the UBM. The first patterning layer including a photosensitive material sensitive to light having a first wavelength. A second patterning layer is formed over the first patterning layer. The second patterning layer including a photosensitive material sensitive to light having a second wavelength. The first patterning layer is selectively exposed with the light having the first wavelength, leaving a first unexposed portion substantially centered over the pad portion between first exposed portions. The second patterning layer is selectively exposed with the light having the second wavelength, leaving a second unexposed portion wider than, and substantially centered over, the first unexposed portion of the exposed first patterning layer. The second unexposed portion of the exposed second patterning layer being between exposed portions. The second unexposed portion of the exposed second patterning layer and the first unexposed portion of the exposed first patterning layer are removed to form opening. A solder plug is formed within the opening. The exposed portions of the exposed first patterning layer and the exposed portions of the exposed second patterning layer are removed. The solder plug is reflowed to form a solder bump.

摘要翻译： 一种制造焊料凸块的方法，包括以下步骤。 提供了具有裸露焊盘部分的衬底上的UBM。 UBM与焊盘部分电接触。 在UBM上形成第一图案化层。 第一图案化层包括对具有第一波长的光敏感的感光材料。 在第一图案化层上形成第二图案化层。 第二图案化层包括对具有第二波长的光敏感的感光材料。 利用具有第一波长的光选择性地暴露第一图案化层，留下第一未曝光部分，其基本上位于第一曝光部分之间的焊盘部分的中心。 用第二波长的光选择性地暴露第二图案化层，留下第二未曝光部分比暴露的第一图案形成图案的第一未曝光部分宽且基本上居中。 曝光的第二图案化层的第二未曝光部分在曝光部分之间。 暴露的第二图案形成层的第二未曝光部分和暴露的第一图案形成层的第一未曝光部分被去除以形成开口。 在开口内形成焊塞。 暴露的第一图案形成层的暴露部分和暴露的第二图案形成层的暴露部分被去除。 焊料回流焊以形成焊料凸点。

公开(公告)号：US07468321B2

公开(公告)日：2008-12-23

申请号：US11382500

申请日：2006-05-10

申请人： Kai-Ming Ching ,  Chia-Fu Lin ,  Wen-Hsiang Tseng ,  Ta-Min Lin ,  Yen-Ming Chen ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Wen-Hsiang Tseng

发明人： Kai-Ming Ching ,  Chia-Fu Lin ,  Wen-Hsiang Tseng ,  Ta-Min Lin ,  Yen-Ming Chen ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Wen-Hsiang Tseng

IPC分类号： H01L21/44

CPC分类号： H01L23/544 ,  H01L21/76838 ,  H01L24/11 ,  H01L24/12 ,  H01L2223/54453 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05671 ,  H01L2224/05124 ,  H01L2224/05147

摘要： A new method is provided for the processing of metals, most notably copper, such that damage to exposed surfaces of these metals is prevented. During a step of semiconductor processing, which results in exposing a metal surface to a wet substance having a pH value, a voltage is applied to the metal that is exposed. The value of the applied voltage can, dependent on the value of the pH constant of the wet substance, be selected such that the exposed metal surface is protected against alkaline effects of the wet substance.

摘要翻译： 提供了一种新的方法来处理金属，特别是铜，以防止这些金属暴露表面的损坏。 在半导体加工的步骤中，导致将金属表面暴露于具有pH值的湿物质的步骤中，向暴露的金属施加电压。 施加电压的值可以根据湿物质的pH常数的值来选择，使得暴露的金属表面被保护免受湿物质的碱性影响。

公开(公告)号：US20070028445A1

公开(公告)日：2007-02-08

申请号：US11581122

申请日：2006-10-13

申请人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen ,  Wen-Chang Kuo ,  Yue-Ying Jian

发明人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen ,  Wen-Chang Kuo ,  Yue-Ying Jian

IPC分类号： B23K31/02

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10T29/49144 ,  Y10T29/49146 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49179 ,  H01L2924/00014 ,  H01L2924/00

摘要： A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF4 and SF6, and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.

摘要翻译： 一种方法，包括提供包括接合焊盘的半导体器件和覆盖在焊盘上的凸块下金属。 在凸块下冶金上形成焊料结构，其中焊料结构包括包含氧化锡的外层。 从CF 4和SF 6 6中的至少一个生成等离子体，并将焊料结构暴露于等离子体。 加热焊料结构并对其进行冷却以在半导体器件上提供焊料凸块。

公开(公告)号：US06802250B2

公开(公告)日：2004-10-12

申请号：US10151377

申请日：2002-05-20

申请人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen

发明人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen

IPC分类号： B41N124

CPC分类号： B41N1/24 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H05K3/1225 ,  H01L2924/00 ,  H01L2224/48

摘要： A stencil design for solder paste printing, or other metal stencil printing, is disclosed. A stencil for stencil printing of solder onto a semiconductor wafer for semiconductor wafer bumping includes a substrate. The substrate has a hole defined therein substantially shaped to correspond to and receptive to the semiconductor wafer. An interior edge of the substrate surrounds the hole, and has an upper lip under which the semiconductor wafer is positioned. The upper lip of the interior edge of the substrate surrounding the hole substantially prevents the solder from flowing onto sides and a bottom of the semiconductor wafer during stencil printing of the solder. The cross-profile shape of the upper lip may in one embodiment be rectangular, whereas in another embodiment be triangular.

摘要翻译： 公开了用于焊膏印刷或其它金属模版印刷的模板设计。 用于将半导体晶片凸起的半导体晶片上的焊料模版印刷的模板包括基板。 衬底具有限定在其中的孔，其基本成形为对应于并接受半导体晶片。 基板的内部边缘围绕孔，并且具有上半边缘，半导体晶片定位在该上边缘上。 围绕孔的衬底的内部边缘的上唇基本上防止焊料在模版印刷焊料期间流到半导体晶片的侧面和底部。 在一个实施例中，上唇的横截面形状可以是矩形，而在另一个实施例中是三角形。