公开(公告)号：US08497584B2

公开(公告)日：2013-07-30

申请号：US10810965

申请日：2004-03-26

申请人： Yen-Ming Chen ,  Chia-Fu Lin ,  Shun-Liang Hsu ,  Kai-Ming Ching ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Li-Chih Chen

发明人： Yen-Ming Chen ,  Chia-Fu Lin ,  Shun-Liang Hsu ,  Kai-Ming Ching ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Li-Chih Chen

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11912 ,  H01L2224/13006 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00014

摘要： A new method is provided for the creation of a solder bump. Conventional methods are initially followed, creating a patterned layer of Under Bump Metal over the surface of a contact pad. A layer of photoresist is next deposited, this layer of photoresist is patterned and developed creating a resist mask having a T-shape opening aligned with the contact pad. This T-shaped opening is filled with a solder compound, creating a T-shaped layer of solder compound on the surface of the layer of UBM. The layer of photoresist is removed, exposing the created T-shaped layer of solder compound, further exposing the layer of UBM. The layer of UBM is etched using the T-shaped layer of solder compound as a mask. Reflow of the solder compound results in creating a solder ball.

摘要翻译： 提供了一种创建焊料凸块的新方法。 最初遵循常规方法，在接触垫的表面上形成凹凸金属图案层。 随后沉积一层光致抗蚀剂，该光致抗蚀剂层被图案化和显影，产生具有与接触焊盘对准的T形开口的抗蚀剂掩模。 该T形开口填充有焊料化合物，在UBM层的表面上形成T形焊料化合物层。 去除光致抗蚀剂层，暴露所生成的T形焊料化合物层，进一步暴露UBM层。 使用焊料化合物的T形层作为掩模蚀刻UBM层。 焊料复合物的回流导致产生焊球。

公开(公告)号：US06756294B1

公开(公告)日：2004-06-29

申请号：US10060483

申请日：2002-01-30

申请人： Yen-Ming Chen ,  Chia-Fu Lin ,  Shun-Liang Hsu ,  Kai-Ming Ching ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Li-Chih Chen

发明人： Yen-Ming Chen ,  Chia-Fu Lin ,  Shun-Liang Hsu ,  Kai-Ming Ching ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Li-Chih Chen

IPC分类号： H01L2144

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11912 ,  H01L2224/13006 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00014

摘要： A new method is provided for the creation of a solder bump. Conventional methods are initially followed, creating a patterned layer of Under Bump Metal over the surface of a contact pad. A layer of photoresist is next deposited, this layer of photoresist is patterned and developed creating a resist mask having a T-shape opening aligned with the contact pad. This T-shaped opening is filled with a solder compound, creating a T-shaped layer of solder compound on the surface of the layer of UBM. The layer of photoresist is removed, exposing the Created T-shaped layer of solder compound, further exposing the layer of UBM. The layer of UBM is etched using the T-shaped layer of solder compound as a mask. Reflow of the solder compound results in creating a solder ball.

摘要翻译： 提供了一种创建焊料凸块的新方法。 最初遵循常规方法，在接触垫的表面上形成凹凸金属图案层。 随后沉积一层光致抗蚀剂，该光致抗蚀剂层被图案化和显影，产生具有与接触焊盘对准的T形开口的抗蚀剂掩模。 该T形开口填充有焊料化合物，在UBM层的表面上形成T形焊料化合物层。 去除光致抗蚀剂层，暴露焊料化合物的产生的T形层，进一步暴露UBM层。 使用焊料化合物的T形层作为掩模蚀刻UBM层。 焊料复合物的回流导致产生焊球。

公开(公告)号：US07134199B2

公开(公告)日：2006-11-14

申请号：US10170745

申请日：2002-06-13

申请人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen ,  Wen-Chang Kuo ,  Yue-Ying Jian

发明人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen ,  Wen-Chang Kuo ,  Yue-Ying Jian

IPC分类号： H01R9/00 ,  H05K3/00

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10T29/49144 ,  Y10T29/49146 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49179 ,  H01L2924/00014 ,  H01L2924/00

摘要： A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF4 and SF6, and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.

摘要翻译： 一种方法，包括提供包括接合焊盘的半导体器件和覆盖在焊盘上的凸块下金属。 在凸块下冶金上形成焊料结构，其中焊料结构包括包含氧化锡的外层。 从CF 4和SF 6 6中的至少一个生成等离子体，并将焊料结构暴露于等离子体。 加热焊料结构并对其进行冷却以在半导体器件上提供焊料凸块。

公开(公告)号：US20070028445A1

公开(公告)日：2007-02-08

申请号：US11581122

申请日：2006-10-13

申请人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen ,  Wen-Chang Kuo ,  Yue-Ying Jian

发明人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen ,  Wen-Chang Kuo ,  Yue-Ying Jian

IPC分类号： B23K31/02

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10T29/49144 ,  Y10T29/49146 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49179 ,  H01L2924/00014 ,  H01L2924/00

摘要： A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF4 and SF6, and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.

摘要翻译： 一种方法，包括提供包括接合焊盘的半导体器件和覆盖在焊盘上的凸块下金属。 在凸块下冶金上形成焊料结构，其中焊料结构包括包含氧化锡的外层。 从CF 4和SF 6 6中的至少一个生成等离子体，并将焊料结构暴露于等离子体。 加热焊料结构并对其进行冷却以在半导体器件上提供焊料凸块。

公开(公告)号：US06802250B2

公开(公告)日：2004-10-12

申请号：US10151377

申请日：2002-05-20

申请人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen

发明人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen

IPC分类号： B41N124

CPC分类号： B41N1/24 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H05K3/1225 ,  H01L2924/00 ,  H01L2224/48

摘要： A stencil design for solder paste printing, or other metal stencil printing, is disclosed. A stencil for stencil printing of solder onto a semiconductor wafer for semiconductor wafer bumping includes a substrate. The substrate has a hole defined therein substantially shaped to correspond to and receptive to the semiconductor wafer. An interior edge of the substrate surrounds the hole, and has an upper lip under which the semiconductor wafer is positioned. The upper lip of the interior edge of the substrate surrounding the hole substantially prevents the solder from flowing onto sides and a bottom of the semiconductor wafer during stencil printing of the solder. The cross-profile shape of the upper lip may in one embodiment be rectangular, whereas in another embodiment be triangular.

摘要翻译： 公开了用于焊膏印刷或其它金属模版印刷的模板设计。 用于将半导体晶片凸起的半导体晶片上的焊料模版印刷的模板包括基板。 衬底具有限定在其中的孔，其基本成形为对应于并接受半导体晶片。 基板的内部边缘围绕孔，并且具有上半边缘，半导体晶片定位在该上边缘上。 围绕孔的衬底的内部边缘的上唇基本上防止焊料在模版印刷焊料期间流到半导体晶片的侧面和底部。 在一个实施例中，上唇的横截面形状可以是矩形，而在另一个实施例中是三角形。

公开(公告)号：US06743660B2

公开(公告)日：2004-06-01

申请号：US10045783

申请日：2002-01-12

申请人： Hsin-Hui Lee ,  Chia-Fu Lin ,  Chao-Yuan Su ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen

发明人： Hsin-Hui Lee ,  Chia-Fu Lin ,  Chao-Yuan Su ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen

IPC分类号： H01L2148

CPC分类号： H01L24/12 ,  H01L23/3114 ,  H01L24/11 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05647 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10T29/49147 ,  Y10T29/49151 ,  Y10T29/49204 ,  Y10T29/49222 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method of forming a bump on a substrate such as a semiconductor wafer or flip chip. The method includes the act of providing a semiconductor device having a contact pad and having an upper passivation layer and an opening formed in the upper passivation layer exposing a portion of the contact pad. An under bump metallurgy is deposited over the upper passivation layer and the contact pad. An electrically conductive redistribution trace is deposited over the under bump metallurgy. A photoresist layer is deposited, patterned and developed to provide portions selectively protecting the electrically conductive redistribution trace and the under bump metallurgy. Excess portions of the electrically conductive redistribution trace and under bump metallurgy not protected by the photoresist are removed.

摘要翻译： 在半导体晶片或倒装芯片等基板上形成凸点的方法。 该方法包括提供具有接触焊盘并具有上钝化层的半导体器件的动作，并且在上钝化层中形成的开口暴露接触焊盘的一部分。 在上钝化层和接触焊盘上沉积凸块下冶金。 导电再分布迹线沉积在凸块下金属之上。 沉积，图案化和显影光致抗蚀剂层以提供选择性地保护导电再分布迹线和凸块下冶金的部分。 移除不被光致抗蚀剂保护的导电再分布迹线和凸块下冶金的多余部分。

公开(公告)号：US07906425B2

公开(公告)日：2011-03-15

申请号：US11581122

申请日：2006-10-13

申请人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen ,  Wen-Chang Kuo ,  Yue-Ying Jian

发明人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen ,  Wen-Chang Kuo ,  Yue-Ying Jian

IPC分类号： H01L21/00

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10T29/49144 ,  Y10T29/49146 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49179 ,  H01L2924/00014 ,  H01L2924/00

摘要： A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF4 and SF6, and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.

摘要翻译： 一种方法，包括提供包括接合焊盘的半导体器件和覆盖在焊盘上的凸块下金属。 在凸块下冶金上形成焊料结构，其中焊料结构包括包含氧化锡的外层。 从CF4和SF6中的至少一种制造等离子体，并将焊料结构暴露于等离子体。 加热焊料结构并对其进行冷却以在半导体器件上提供焊料凸块。

公开(公告)号：US07276454B2

公开(公告)日：2007-10-02

申请号：US10286626

申请日：2002-11-02

申请人： Kai-Ming Ching ,  Chia Fu Lin ,  Wen-Hsiang Tseng ,  Ta-Min Lin ,  Yen-Ming Chen ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Li-Chih Chen

发明人： Kai-Ming Ching ,  Chia Fu Lin ,  Wen-Hsiang Tseng ,  Ta-Min Lin ,  Yen-Ming Chen ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Li-Chih Chen

IPC分类号： H01L21/302

CPC分类号： H01L23/544 ,  H01L21/76838 ,  H01L24/11 ,  H01L24/12 ,  H01L2223/54453 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05671 ,  H01L2224/05124 ,  H01L2224/05147

摘要： A new method is provided for the processing of metals, most notably copper, such that damage to exposed surfaces of these metals is prevented. During a step of semiconductor processing, which results in exposing a metal surface to a wet substance having a pH value, a voltage is applied to the metal that is exposed. The value of the applied voltage can, dependent on the value of the pH constant of the wet substance, be selected such that the exposed metal surface is protected against alkaline effects of the wet substance.

摘要翻译： 提供了一种新的方法来处理金属，特别是铜，以防止这些金属暴露表面的损坏。 在半导体加工的步骤中，导致将金属表面暴露于具有pH值的湿物质的步骤中，向暴露的金属施加电压。 施加电压的值可以根据湿物质的pH常数的值来选择，使得暴露的金属表面被保护免受湿物质的碱性影响。

公开(公告)号：US06974659B2

公开(公告)日：2005-12-13

申请号：US10051906

申请日：2002-01-16

申请人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen

发明人： Chao-Yuan Su ,  Chia-Fu Lin ,  Hsin-Hui Lee ,  Yen-Ming Chen ,  Kai-Ming Ching ,  Li-Chih Chen

IPC分类号： H01L21/60 ,  H01L23/485 ,  G03F7/16 ,  G03F7/20 ,  G03F7/40 ,  H01L21/441 ,  B23K35/14

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/11 ,  H01L2224/1147 ,  H01L2224/11502 ,  H01L2224/11849 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/30107 ,  H01L2924/00

摘要： A method for protecting a semiconductor process wafer surface from contacting thermally degraded photoresist including providing a semiconductor process wafer having a process surface; forming a protective layer over selected areas of the process surface said protective layer including a resinous organic material having a glass transition temperature (Tg) that is about greater than a thermal treatment temperature; forming a photoresist layer over at least a portion of the protective layer to include a photolithographic patterning process; and subjecting the semiconductor process wafer to the thermal treatment temperature.

摘要翻译： 一种用于保护半导体工艺晶片表面免受接触热降解光刻胶的方法，包括提供具有工艺表面的半导体工艺晶片; 在所述工艺表面的选定区域上形成保护层，所述保护层包括玻璃化转变温度（Tg）大于热处理温度的树脂有机材料; 在所述保护层的至少一部分上形成光致抗蚀剂层以包括光刻图案化工艺; 并对半导体工艺晶片进行热处理温度。

公开(公告)号：US06636313B2

公开(公告)日：2003-10-21

申请号：US10045413

申请日：2002-01-12

申请人： Yen-Ming Chen ,  Chia-Fu Lin ,  Kai-Ming Ching ,  Chao-Yuan Su ,  Hsin-Hui Lee ,  Li-Chih Chen

发明人： Yen-Ming Chen ,  Chia-Fu Lin ,  Kai-Ming Ching ,  Chao-Yuan Su ,  Hsin-Hui Lee ,  Li-Chih Chen

IPC分类号： G01B1100

CPC分类号： G03F7/70633 ,  G01B11/272 ,  H01L24/11 ,  H01L2224/0224 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05093 ,  H01L2224/05572 ,  H01L2924/14 ,  H01L2924/00

摘要： A method including the acts of providing a semiconductor device having a plurality of misalignment ruler markers formed therein for measuring removable layer opening misalignment in the X and Y directions, a bond pad and the passivation layer with an opening therein down to the bond pad. A removable layer is formed over the semiconductor device and includes an opening therein down to the bond pad. Preferably this action includes depositing, patterning and developing a dry photoresist film layer over the semiconductor device with an opening therein down to the bond pad. The next act includes measuring the misalignment of the opening in the passivation layer by counting the number of misalignment ruler markers visibly exposed by the opening in the X-direction and also the Y-direction.

摘要翻译： 一种方法，包括提供半导体器件的动作，所述半导体器件具有形成在其中的多个不对准标尺标记，用于测量在X和Y方向上的可移除层开口未对准，接合焊盘和钝化层，其中开口向下到接合焊盘。 可移除层形成在半导体器件上方并且包括其中向下到达接合焊盘的开口。 优选地，该动作包括在半导体器件上沉积，图案化和显影干的光致抗蚀剂膜层，其中开口向下到接合焊盘。 下一个动作包括通过计数由X方向和Y方向上的开口可见地露出的未对准标尺标记的数量来测量钝化层中的开口的未对准。