公开(公告)号：US08664833B2

公开(公告)日：2014-03-04

申请号：US13288988

申请日：2011-11-04

申请人： Sang Choon Ko ,  Chi Hoon Jun

发明人： Sang Choon Ko ,  Chi Hoon Jun

IPC分类号： H02N2/18

CPC分类号： B60C23/0411 ,  H01L41/1134 ,  H01L41/25 ,  H02N2/186

摘要： Disclosed are a slim self-powering power supplier using a flexible PCB for a wireless sensor network and a sensor node using the same, and a fabrication method thereof. An exemplary embodiment of the present disclosure provides a self-powering power supplier including: a flexible PCB; a lower electrode positioned on the flexible PCB; a piezoelectric body having a cantilever structure deposited on the lower electrode; and an upper electrode formed on the piezoelectric body.

摘要翻译： 公开了一种使用用于无线传感器网络的柔性PCB和使用其的传感器节点的纤薄的自供电电源及其制造方法。 本公开的示例性实施例提供了一种自供电电源，包括：柔性PCB; 位于柔性PCB上的下电极; 具有沉积在下电极上的悬臂结构的压电体; 以及形成在压电体上的上电极。

公开(公告)号：US08598768B2

公开(公告)日：2013-12-03

申请号：US13316590

申请日：2011-12-12

申请人： Chi Hoon Jun ,  Sang Choon Ko ,  Jong Tae Moon

发明人： Chi Hoon Jun ,  Sang Choon Ko ,  Jong Tae Moon

IPC分类号： H01L41/08

CPC分类号： H01L41/29 ,  H01L41/1136 ,  H01L41/31 ,  H01L41/316 ,  H01L41/317 ,  H01L41/318 ,  H02N2/188 ,  Y10T29/42

摘要： Disclosed is a piezoelectric micro energy harvester and manufacturing method thereof, the method including: forming an insulation film on a substrate; patterning the insulation film and forming an electrode pad pattern, a center electrode pattern, and a side electrode pattern; forming an open cavity at an inside of the substrate for suspension of the center electrode pattern and the side electrode pattern; disposing a conductive film on the electrode pad pattern, the center electrode pattern, and the side electrode pattern and forming electrode pads, a center electrode, and a side electrode; and forming a piezoelectric film so as to cover a space between the center electrode and the side electrode and upper surfaces of the center electrode and the side electrode.

摘要翻译： 公开了一种压电微能量收集器及其制造方法，该方法包括：在基板上形成绝缘膜; 图案化绝缘膜并形成电极焊盘图案，中心电极图案和侧面电极图案; 在所述基板的内部形成开放空腔，以悬浮所述中心电极图案和所述侧面电极图案; 在电极焊盘图形，中心电极图案和侧面电极图案上设置导电膜，形成电极焊盘，中心电极和侧面电极; 以及形成压电膜以覆盖中心电极和侧电极之间的空间以及中心电极和侧电极的上表面。

公开(公告)号：US20130069173A1

公开(公告)日：2013-03-21

申请号：US13592560

申请日：2012-08-23

申请人： Woo Jin CHANG ,  Jong Won LIM ,  Ho Kyun AHN ,  Sang Choon KO ,  Sung Bum BAE ,  Chull Won JU ,  Young Rak PARK ,  Jae Kyoung MUN ,  Eun Soo NAM

发明人： Woo Jin CHANG ,  Jong Won LIM ,  Ho Kyun AHN ,  Sang Choon KO ,  Sung Bum BAE ,  Chull Won JU ,  Young Rak PARK ,  Jae Kyoung MUN ,  Eun Soo NAM

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66901 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

摘要： Disclosed are a power semiconductor device and a method of fabricating the same which can increase a breakdown voltage of the device through a field plate formed between a gate electrode and a drain electrode and achieve an easier manufacturing process at the same time. The power semiconductor device according to an exemplary embodiment of the present disclosure includes a source electrode and a drain electrode formed on a substrate; a dielectric layer formed between the source electrode and the drain electrode to have a lower height than heights of the two electrodes and including an etched part exposing the substrate; a gate electrode formed on the etched part; a field plate formed on the dielectric layer between the gate electrode and the drain electrode;and a metal configured to connect the field plate and the source electrode.

摘要翻译： 公开了功率半导体器件及其制造方法，其可以通过形成在栅电极和漏电极之间的场板来增加器件的击穿电压，并且同时实现更容易的制造工艺。 根据本公开的示例性实施例的功率半导体器件包括形成在衬底上的源电极和漏电极; 形成在所述源电极和所述漏电极之间的电介质层具有比所述两个电极的高度低的高度，并且包括暴露所述衬底的蚀刻部分; 形成在蚀刻部分上的栅电极; 形成在栅电极和漏电极之间的电介质层上的场板; 以及配置成连接场板和源电极的金属。

公开(公告)号：US08263426B2

公开(公告)日：2012-09-11

申请号：US12509360

申请日：2009-07-24

申请人： Sang Choon Ko ,  Chi Hoon Jun ,  Byoung Gon Yu ,  Chang Auck Choi

发明人： Sang Choon Ko ,  Chi Hoon Jun ,  Byoung Gon Yu ,  Chang Auck Choi

IPC分类号： H01L21/00

CPC分类号： G01P15/0802 ,  G01H11/06 ,  G01P1/023 ,  G01P15/125 ,  H04R19/005

摘要： Provided is a high-sensitivity MEMS-type z-axis vibration sensor, which may sense z-axis vibration by differentially shifting an electric capacitance between a doped upper silicon layer and an upper electrode from positive to negative or vice versa when center mass of a doped polysilicon layer is moved due to z-axis vibration. Particularly, since a part of the doped upper silicon layer is additionally connected to the center mass of the doped polysilicon layer, and thus an error made by the center mass of the doped polysilicon layer is minimized, it may sensitively respond to weak vibration of low frequency such as seismic waves. Accordingly, since the high-sensitivity MEMS-type z-axis vibration sensor sensitively responds to a small amount of vibration in a low frequency band, it can be applied to a seismograph sensing seismic waves of low frequency which have a very small amount of vibration and a low vibration speed. Moreover, since the high-sensitivity MEMS-type z-axis vibration sensor has a higher vibration sensibility than MEMS-type z-axis vibration sensor of the same size, it can be useful in electronic devices which are gradually decreasing in size.

摘要翻译： 提供了一种高灵敏度的MEMS型z轴振动传感器，其可以通过将掺杂的上硅层和上电极之间的电容从正向或者反向偏移来感测z轴振动，当中心质量为 掺杂多晶硅层由于z轴振动而移动。 特别地，由于掺杂的上硅层的一部分另外连接到掺杂多晶硅层的中心质量块，因此由掺杂多晶硅层的中心质量造成的误差最小化，可以敏感地响应低的振动弱 频率如地震波。 因此，由于高灵敏度的MEMS型z轴振动传感器对低频带中的少量振动敏感地作出响应，因此可以应用于地震仪中，以便感测具有极小振动频率的低频地震波 和低振动速度。 此外，由于高灵敏度的MEMS型z轴振动传感器具有比相同尺寸的MEMS型z轴振动传感器更高的振动灵敏度，所以在逐渐减小的电子设备中是有用的。

公开(公告)号：US20120153778A1

公开(公告)日：2012-06-21

申请号：US13316590

申请日：2011-12-12

申请人： Chi Hoon JUN ,  Sang Choon KO ,  Jong Tae MOON

发明人： Chi Hoon JUN ,  Sang Choon KO ,  Jong Tae MOON

IPC分类号： H02N2/18 ,  H01L41/22

CPC分类号： H01L41/29 ,  H01L41/1136 ,  H01L41/31 ,  H01L41/316 ,  H01L41/317 ,  H01L41/318 ,  H02N2/188 ,  Y10T29/42

摘要： Disclosed is a piezoelectric micro energy harvester and manufacturing method thereof, the method including: forming an insulation film on a substrate; patterning the insulation film and forming an electrode pad pattern, a center electrode pattern, and a side electrode pattern; forming an open cavity at an inside of the substrate for suspension of the center electrode pattern and the side electrode pattern; disposing a conductive film on the electrode pad pattern, the center electrode pattern, and the side electrode pattern and forming electrode pads, a center electrode, and a side electrode; and forming a piezoelectric film so as to cover a space between the center electrode and the side electrode and upper surfaces of the center electrode and the side electrode.

摘要翻译： 公开了一种压电微能量收集器及其制造方法，该方法包括：在基板上形成绝缘膜; 图案化绝缘膜并形成电极焊盘图案，中心电极图案和侧面电极图案; 在所述基板的内部形成开放空腔，以悬浮所述中心电极图案和所述侧面电极图案; 在电极焊盘图形，中心电极图案和侧面电极图案上设置导电膜，形成电极焊盘，中心电极和侧面电极; 以及形成压电膜以覆盖中心电极和侧电极之间的空间以及中心电极和侧电极的上表面。

公开(公告)号：US07664357B2

公开(公告)日：2010-02-16

申请号：US11945551

申请日：2007-11-27

申请人： Hyun Woo Song ,  Sang Choon Ko

发明人： Hyun Woo Song ,  Sang Choon Ko

IPC分类号： G02B6/26 ,  G02B6/30 ,  G02B6/122

CPC分类号： G02B6/1225 ,  B82Y20/00 ,  G02B6/4204 ,  G02B6/4246

摘要： Provided are a photonic-crystal plate that forms an optical waveguide and an optical device assembly using the same, and more particularly, a vertical-type photonic-crystal plate and an optical device assembly configured to be easily integrated with surface-emitting light source devices and surface-receiving light detector devices. The photonic-crystal plate includes a plurality of cylindrical through holes formed in a thickness direction and arranged in a periodic crystal lattice structure. The plate further includes: a main crystal lattice defect that forms a main optical waveguide for passing lights in a direction perpendicular to the photonic-crystal plate; and a sub-crystal lattice defect that forms a sub-optical waveguide for causing light in a specific wavelength band among the lights passing through the main optical waveguide to be optically coupled and passing the coupled light in the direction perpendicular to the photonic-crystal plate.

摘要翻译： 提供一种形成光波导的光子晶体板和使用该光波导的光学器件组件，更具体地，涉及一种垂直型光子晶体板和光学器件组件，其被配置为容易地与表面发射光源器件 和表面接收光检测器装置。 光子晶体板包括沿厚度方向形成并以周期性晶格结构排列的多个圆柱形通孔。 该板还包括：主晶格缺陷，其形成用于使光沿垂直于光子晶体板的方向通过的主光波导; 以及亚晶格缺陷，其形成用于使通过主光波导的光中的特定波长带的光光耦合并使耦合的光沿垂直于光子晶体板的方向通过的子光波导 。

公开(公告)号：US20090151429A1

公开(公告)日：2009-06-18

申请号：US12142695

申请日：2008-06-19

申请人： Chi Hoon JUN ,  Sang Choon KO ,  Moon Youn JUNG ,  Seon Hee PARK

发明人： Chi Hoon JUN ,  Sang Choon KO ,  Moon Youn JUNG ,  Seon Hee PARK

IPC分类号： G01N9/00 ,  H01L21/00

CPC分类号： G01N33/0027 ,  G01N27/128

摘要： Provided is a micro gas sensor including: a substrate; an open cavity and electrode pad separation grooves formed on the substrate; a plurality of electrode pads formed on an upper portion of the substrate and electrically insulated from each other by the electrode pad separation grooves; a micro heater connected to a plurality of the electrode pads by a bridge structure and suspended on the open cavity; a plurality of sensing electrodes formed on the same plane between the micro heater and a plurality of the electrode pads in a cantilever array and suspended on the open cavity; and a gas sensing film formed to be hung down between microelectrode finger spacings of a plurality of the sensing electrodes to represent changes in characteristics according to a gas concentration by contacting surfaces of the micro heater and a plurality of the sensing electrodes. Therefore, the micro gas sensor can have low power consumption, a rapid heating and cooling time, high durability, high sensitivity characteristics, and a capability of easily forming a gas sensing film by using various materials. In addition, the micro gas sensor can be miniaturized and mass-produced at low cost in a simple structure using only a single pattern mask.

摘要翻译： 提供一种微气体传感器，包括：基板; 形成在所述基板上的开放空腔和电极焊盘分离槽; 多个电极焊盘，其形成在所述基板的上部并且由所述电极焊盘分离槽彼此电绝缘; 微加热器，其通过桥结构连接到多个电极焊盘并悬挂在所述开放空腔上; 多个感测电极，形成在微加热器和悬臂式悬臂之间的多个电极焊盘的同一平面上; 以及气体传感膜，其被形成为悬挂在多个感测电极的微电极指间隔之间，以通过接触微加热器的表面和多个感测电极来表示根据气体浓度的特性变化。 因此，微气体传感器可以具有低功耗，快速的加热和冷却时间，高耐久性，高灵敏度特性，以及通过使用各种材料容易地形成气体感测膜的能力。 此外，微型气体传感器可以在仅使用单一图案掩模的简单结构中以低成本小型化和批量生产。

公开(公告)号：US20080185128A1

公开(公告)日：2008-08-07

申请号：US11815364

申请日：2006-01-10

申请人： Seok Hwan Moon ,  Gunn Hwang ,  Sang Choon Ko ,  Sung Weon Kang ,  Chang Auck Choi

发明人： Seok Hwan Moon ,  Gunn Hwang ,  Sang Choon Ko ,  Sung Weon Kang ,  Chang Auck Choi

IPC分类号： F28D15/02

CPC分类号： F28D15/046 ,  F28D15/0233 ,  F28F1/022

摘要： Provided is a flat plate-type heat pipe formed of a flat pipe having a predetermined through-hole formed therein and a plurality of grooves extending from an inner surface of the through-hole in a longitudinal direction so that, while the interior of the heat pipe is in a vacuum state, heat in the heat pipe is discharged to the exterior due to a phase change of between liquid and gaseous states of working fluid and the working fluid flows by a capillary force produced from the plurality of grooves, whereby it is possible to obtain a strong capillary force and an excellent cooling effect while it is manufactured through a simple process.

摘要翻译： 本发明提供一种平面型热管，其由具有形成在其中的预定通孔的扁平管形成，以及沿着纵向方向从通孔的内表面延伸的多个槽，使得在热的内部 管处于真空状态，由于工作流体的液态和气态之间的相变，热管中的热量被排出到外部，并且工作流体由多个槽产生的毛细管力流动，由此 可以通过简单的工艺制造而获得强的毛细管力和优异的冷却效果。

公开(公告)号：US08723222B2

公开(公告)日：2014-05-13

申请号：US13548522

申请日：2012-07-13

申请人： Sung Bum Bae ,  Eun Soo Nam ,  Jae Kyoung Mun ,  Sung Bock Kim ,  Hae Cheon Kim ,  Chull Won Ju ,  Sang Choon Ko ,  Jong-Won Lim ,  Ho Kyun Ahn ,  Woo Jin Chang ,  Young Rak Park

发明人： Sung Bum Bae ,  Eun Soo Nam ,  Jae Kyoung Mun ,  Sung Bock Kim ,  Hae Cheon Kim ,  Chull Won Ju ,  Sang Choon Ko ,  Jong-Won Lim ,  Ho Kyun Ahn ,  Woo Jin Chang ,  Young Rak Park

IPC分类号： H01L31/102

CPC分类号： H01L29/66446 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0883

摘要： The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.

摘要翻译： 本发明涉及一种氮化物电子器件及其制造方法，特别涉及一种氮化物电子器件及其制造方法，该氮化物电子器件及其制造方法可以通过再生技术在同一衬底上实现各种氮化物一体化结构（ 用于包括III族元素如镓（Ga），铝（Al）和铟（In））和氮（III）的III族氮化物半导体电子器件中的半绝缘氮化镓（GaN）层的外延横向过度生长：ELOG） 。

公开(公告)号：US20130020649A1

公开(公告)日：2013-01-24

申请号：US13548522

申请日：2012-07-13

申请人： Sung Bum BAE ,  Eun Soo NAM ,  Jae Kyoung MUN ,  Sung Bock KIM ,  Hae Cheon KIM ,  Chull Won JU ,  Sang Choon KO ,  Jong-Won LIM ,  Ho Kyun AHN ,  Woo Jin CHANG ,  Young Rak PARK

发明人： Sung Bum BAE ,  Eun Soo NAM ,  Jae Kyoung MUN ,  Sung Bock KIM ,  Hae Cheon KIM ,  Chull Won JU ,  Sang Choon KO ,  Jong-Won LIM ,  Ho Kyun AHN ,  Woo Jin CHANG ,  Young Rak PARK

IPC分类号： H01L27/088 ,  H01L21/20 ,  H01L27/08

CPC分类号： H01L29/66446 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0883

摘要： The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.

摘要翻译： 本发明涉及一种氮化物电子器件及其制造方法，特别涉及一种氮化物电子器件及其制造方法，该氮化物电子器件及其制造方法可以通过再生技术在同一衬底上实现各种氮化物一体化结构（ 用于包括III族元素如镓（Ga），铝（Al）和铟（In））和氮（III）的III族氮化物半导体电子器件中的半绝缘氮化镓（GaN）层的外延横向过度生长：ELOG） 。