公开(公告)号：US07855108B2

公开(公告)日：2010-12-21

申请号：US12713753

申请日：2010-02-26

申请人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

发明人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

IPC分类号： H01L21/338

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/737 ,  H01L29/7781 ,  H01L29/7786

摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).

摘要翻译： 可以通过CVD，PVD和MOCVD生长用于SiC上异质结构的Si（1-x）MxC材料。 掺杂有诸如Al的金属的SIC改变带隙并因此改变异质结构。 使用SiC和金属源的SiC Si（1-x）MxC异质结的生长允许制造改进的HFMT（高频迁移率晶体管），HBT（异质结双极晶体管）和HEMT（高电子迁移率晶体管）。

公开(公告)号：US07683400B1

公开(公告)日：2010-03-23

申请号：US11474398

申请日：2006-06-26

申请人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

发明人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

IPC分类号： H01L29/08

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/737 ,  H01L29/7781 ,  H01L29/7786

摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).

公开(公告)号：US20100192840A1

公开(公告)日：2010-08-05

申请号：US12713753

申请日：2010-02-26

申请人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

发明人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

IPC分类号： C30B23/02

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/737 ,  H01L29/7781 ,  H01L29/7786

摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).

摘要翻译： 可以通过CVD，PVD和MOCVD生长用于SiC上异质结构的Si（1-x）MxC材料。 掺杂有诸如Al的金属的SIC改变带隙并因此改变异质结构。 使用SiC和金属源的SiC Si（1-x）MxC异质结的生长允许制造改进的HFMT（高频迁移率晶体管），HBT（异质结双极晶体管）和HEMT（高电子迁移率晶体管）。

公开(公告)号：US20080179534A1

公开(公告)日：2008-07-31

申请号：US11699335

申请日：2007-01-30

申请人： Narsingh Bahadur Singh ,  Aaron A. Pesetski ,  Andre Berghmans ,  Brian P. Wagner ,  David Kahler ,  David J. Knuteson ,  Darren Thomson

发明人： Narsingh Bahadur Singh ,  Aaron A. Pesetski ,  Andre Berghmans ,  Brian P. Wagner ,  David Kahler ,  David J. Knuteson ,  Darren Thomson

IPC分类号： G01J1/42

CPC分类号： G01J1/429 ,  G01J1/0488

摘要： A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of β- and γ-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter. The radiation detection system can be used to monitor contamination in a nuclear plant or a nuclear waste dump site. It may also be used for surveillance of contamination in case of a nuclear accident.

摘要翻译： 公开了使用窄带UV晶体滤波器的核辐射检测系统。 由于可以在大约200-350nm（紫外范围）的光谱范围内检测在β辐射和γ射线衰变期间产生的光子，所以使用基于UV滤光片的光电传感器进行检测。 核辐射检测系统包括能够聚焦在辐射源上的光学组件，具有窄带UV晶体滤波器并被定位成接收透过光学组件的光的UV滤光器组件，以及定位成接收透过光学组件的光的光检测器 紫外线过滤器总成。 窄带UV晶体滤波器由选自氟硅酸镍，氟硼酸镍和硫酸镍镍的晶体制成。 可以掺杂氟硅酸镍，氟硼酸镍和硫酸镍钾以实现更窄的带过滤器。 辐射检测系统可用于监测核电厂或核废料堆场的污染。 也可用于在发生核事故时监视污染。

公开(公告)号：US07525099B2

公开(公告)日：2009-04-28

申请号：US11699335

申请日：2007-01-30

申请人： Narsingh Bahadur Singh ,  Aaron A. Pesetski ,  Andre Berghmans ,  Brian P. Wagner ,  David Kahler ,  David J. Knuteson ,  Darren Thomson

发明人： Narsingh Bahadur Singh ,  Aaron A. Pesetski ,  Andre Berghmans ,  Brian P. Wagner ,  David Kahler ,  David J. Knuteson ,  Darren Thomson

IPC分类号： G01J1/42

CPC分类号： G01J1/429 ,  G01J1/0488

摘要： A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of β- and γ-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter. The radiation detection system can be used to monitor contamination in a nuclear plant or a nuclear waste dump site. It may also be used for surveillance of contamination in case of a nuclear accident.

摘要翻译： 公开了使用窄带UV晶体滤波器的核辐射检测系统。 由于可以在大约200-350nm（紫外范围）的光谱范围内检测在β辐射和γ射线衰变期间产生的光子，所以使用基于UV滤光片的光电传感器进行检测。 核辐射检测系统包括能够聚焦在辐射源上的光学组件，具有窄带UV晶体滤波器并被定位成接收透过光学组件的光的UV滤光器组件，以及定位成接收透过光学组件的光的光检测器 紫外线过滤器总成。 窄带UV晶体滤波器由选自氟硅酸镍，氟硼酸镍和硫酸镍镍的晶体制成。 可以掺杂氟硅酸镍，氟硼酸镍和硫酸镍钾以实现更窄的带过滤器。 辐射检测系统可用于监测核电厂或核废料堆场的污染。 也可用于在发生核事故时监视污染。

公开(公告)号：US09570646B2

公开(公告)日：2017-02-14

申请号：US14185567

申请日：2014-02-20

申请人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

发明人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

IPC分类号： H01L31/107 ,  H01L31/0336 ,  H01L31/0232 ,  H01L27/144 ,  H01L31/18

CPC分类号： H01L31/1075 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/18

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

摘要翻译： 集成电路包括包括外延层的衬底材料，其中衬底材料和外延层形成具有第一导电类型的外延层的第一半导体材料。 包括不同于第一半导体材料的第一导电类型掺杂的具有第二导电类型的第二半导体材料的至少一个纳米线与第一半导体材料形成结交​​叉区域。 纳米线和第一半导体材料在结交叉区域形成雪崩光电二极管（APD），以实现单光子检测。 在替代配置中，APD形成为p-i-n交叉区域，其中n表示n型材料，i表示本征层，p表示p型材料。

公开(公告)号：US07830644B2

公开(公告)日：2010-11-09

申请号：US11713783

申请日：2007-03-05

申请人： Narsingh B. Singh ,  John J. Talvacchio ,  Marc Sherwin ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  John D. Adam

发明人： Narsingh B. Singh ,  John J. Talvacchio ,  Marc Sherwin ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  John D. Adam

IPC分类号： H01G4/06 ,  H01G4/005

CPC分类号： C01G23/002 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/462 ,  C04B2235/3208 ,  C04B2235/3227 ,  C04B2235/3281 ,  H01G4/105 ,  H01G4/1209 ,  H01G4/1218 ,  H01G4/306

摘要： Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.

摘要翻译： 公开了生产多晶和单晶电介质的方法，包括包含CaCu 3 Ti 4 O 12或La 3 Ga 5 SiO 4的电介质。 通过原子晶格常数调整电介质及其生长衬底，制造出具有改善的结晶度的高级单晶。 根据所公开的方法制备的电介质材料可用于制造储能装置，例如， 电容器

公开(公告)号：US10211359B2

公开(公告)日：2019-02-19

申请号：US15356152

申请日：2016-11-18

申请人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

发明人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

IPC分类号： H01L31/107 ,  H01L31/0336 ,  H01L31/0232 ,  H01L27/144 ,  H01L31/18 ,  H01L31/0352

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

公开(公告)号：US20150236186A1

公开(公告)日：2015-08-20

申请号：US14185567

申请日：2014-02-20

申请人： NARSINGH B. SINGH ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

发明人： NARSINGH B. SINGH ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

IPC分类号： H01L31/107 ,  H01L31/18 ,  H01L27/144 ,  H01L31/0336 ,  H01L31/0232

CPC分类号： H01L31/1075 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/18

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

摘要翻译： 集成电路包括包括外延层的衬底材料，其中衬底材料和外延层形成具有第一导电类型的外延层的第一半导体材料。 包括不同于第一半导体材料的第一导电类型掺杂的具有第二导电类型的第二半导体材料的至少一个纳米线与第一半导体材料形成结交​​叉区域。 纳米线和第一半导体材料在结交叉区域形成雪崩光电二极管（APD），以实现单光子检测。 在替代配置中，APD形成为p-i-n交叉区域，其中n表示n型材料，i表示本征层，p表示p型材料。

公开(公告)号：US20080218940A1

公开(公告)日：2008-09-11

申请号：US11713783

申请日：2007-03-05

申请人： Narsingh B. Singh ,  John J. Talvacchio ,  Marc Sherwin ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  John D. Adam

发明人： Narsingh B. Singh ,  John J. Talvacchio ,  Marc Sherwin ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  John D. Adam

IPC分类号： H01G5/013 ,  C01F11/02 ,  C01F17/00 ,  C01G23/00 ,  C01G3/02 ,  H01G5/011

CPC分类号： C01G23/002 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/462 ,  C04B2235/3208 ,  C04B2235/3227 ,  C04B2235/3281 ,  H01G4/105 ,  H01G4/1209 ,  H01G4/1218 ,  H01G4/306

摘要： Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.

摘要翻译： 公开了生产多晶和单晶电介质的方法，包括包含CaC 3 3 Ti 4 O 12或La 3 N 3的电介质 > 5 SiO 4。 通过原子晶格常数调整电介质及其生长衬底，制造出具有改善结晶度的高级单晶。 根据所公开的方法制备的电介质材料可用于制造储能装置，例如， 电容器