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公开(公告)号：US09184213B2
公开(公告)日：2015-11-10
申请号：US12696524
申请日：2010-01-29
申请人： Jianhua Yang , Dmitri Strukov , Wei Wu
发明人： Jianhua Yang , Dmitri Strukov , Wei Wu
IPC分类号： H01L27/105 , H01L27/24 , H01L27/118 , H01L45/00 , G11C13/00 , G11C11/419 , H01L27/115 , H01L27/112
CPC分类号： H01L27/24 , G11C11/419 , G11C13/0007 , G11C13/0009 , G11C13/004 , G11C13/0069 , G11C2213/52 , H01L27/11206 , H01L27/115 , H01L27/118 , H01L27/2409 , H01L27/2418 , H01L27/2463 , H01L45/00 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1206 , H01L45/1233 , H01L45/141 , H01L45/145 , H01L45/146 , H01L45/148
摘要： A nanoscale switching device has an active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. The switching device has first, second and third electrodes with nanoscale widths. The active region is disposed between the first and second electrodes. A resistance modifier layer, which has a non-linear voltage-dependent resistance, is disposed between the second and third electrodes.
摘要翻译： 纳米级开关器件具有包含能够承载一种掺杂剂并在电场下传输掺杂剂的开关材料的有源区。 开关器件具有纳米级宽度的第一，第二和第三电极。 有源区设置在第一和第二电极之间。 具有非线性电压依赖性电阻的电阻修饰层设置在第二和第三电极之间。
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公开(公告)号：US20120074378A1
公开(公告)日：2012-03-29
申请号：US12889389
申请日：2010-09-23
申请人： Wei Wu , Jianhua Yang , Zhiyong Li , Shih-Yuan Wang , Dmitri Strukov , Alexandre Bratkovski
发明人： Wei Wu , Jianhua Yang , Zhiyong Li , Shih-Yuan Wang , Dmitri Strukov , Alexandre Bratkovski
CPC分类号： H01L27/10 , B82Y10/00 , G11C13/0016 , G11C13/0069 , G11C2013/0095 , H01L27/0688 , H01L27/105 , H01L27/115 , H01L27/11551 , H01L27/2472 , H01L27/2481 , H01L29/86 , H01L45/04 , H01L45/1233 , H01L45/14 , H01L45/146
摘要： A memory element is provided that includes a first electrode, a second electrode, and an active region disposed between the first electrode and the second electrode, wherein at least a portion of the active region comprises an elastically deformable material, and wherein deformation of the elastically deformable material causes said memory element to change from a lower conductive state to a higher conductive state. A multilayer structure also is provided that includes a base and a multilayer circuit disposed above the base, where the multilayer circuit includes at least of the memory elements including the elastically deformable material.
摘要翻译： 提供了一种存储元件，其包括第一电极，第二电极和设置在第一电极和第二电极之间的有源区，其中有源区的至少一部分包括可弹性变形的材料，并且其中弹性变形 可变形材料使得所述存储元件从较低的导电状态变为较高的导电状态。 还提供了一种多层结构，其包括设置在基底之上的基底和多层电路，其中多层电路至少包括包括可弹性变形的材料的存储元件。
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公开(公告)号：US20110186801A1
公开(公告)日：2011-08-04
申请号：US12696524
申请日：2010-01-29
申请人： Jianhua Yang , Dmitri Strukov , Wei Wu
发明人： Jianhua Yang , Dmitri Strukov , Wei Wu
CPC分类号： H01L27/24 , G11C11/419 , G11C13/0007 , G11C13/0009 , G11C13/004 , G11C13/0069 , G11C2213/52 , H01L27/11206 , H01L27/115 , H01L27/118 , H01L27/2409 , H01L27/2418 , H01L27/2463 , H01L45/00 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1206 , H01L45/1233 , H01L45/141 , H01L45/145 , H01L45/146 , H01L45/148
摘要： A nanoscale switching device has an active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical held. The switching device has first, second and third electrodes with nanoscale widths. The active region is disposed between the first and second electrodes. A resistance modifier layer, which has a non-linear voltage-dependent resistance, is disposed between the second and third electrodes.
摘要翻译： 纳米级开关器件具有含有能够携带多种掺杂剂并在电气保持下输送掺杂剂的开关材料的有源区域。 开关器件具有纳米级宽度的第一，第二和第三电极。 有源区设置在第一和第二电极之间。 具有非线性电压依赖性电阻的电阻修饰层设置在第二和第三电极之间。
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公开(公告)号：US08879300B2
公开(公告)日：2014-11-04
申请号：US13384853
申请日：2010-04-22
申请人： Jianhua Yang , Wei Wu , Qiangfei Xia
发明人： Jianhua Yang , Wei Wu , Qiangfei Xia
IPC分类号： G11C11/00 , H01L45/00 , B82Y10/00 , H01L27/102
CPC分类号： B82Y10/00 , H01L27/1021 , H01L45/08
摘要： Various embodiments of the present invention are directed to nanoscale electronic devices that provide nonvolatile memristive switching. In one aspect, a two-terminal device (600) comprises a first electrode (602), a second electrode (604), and an active region (606) disposed between the first electrode and the second electrode. The active region includes a mobile dopant (608), and a fast drift ionic species (610). The fast drift ionic species drifts into a diode-like electrode/active region interface temporarily increasing conductance across the interface when a write voltage is applied to the two-terminal device to switch the device conductance.
摘要翻译： 本发明的各种实施例涉及提供非易失性忆阻切换的纳米级电子器件。 在一个方面，双端器件（600）包括第一电极（602），第二电极（604）和设置在第一电极和第二电极之间的有源区（606）。 有源区包括移动掺杂剂（608）和快速漂移的离子物质（610）。 当向双端器件施加写入电压以切换器件电导时，快速漂移的离子物质漂移到二极管状电极/有源区接口中，暂时增加跨接口的电导。
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公开(公告)号：US08525146B2
公开(公告)日：2013-09-03
申请号：US12961214
申请日：2010-12-06
IPC分类号： H01L47/00 , H01L21/326 , H01L21/479
CPC分类号： H01L45/04 , H01L27/2472 , H01L45/1206 , H01L45/1226 , H01L45/146
摘要： An electrical circuit component includes a first electrode, a plurality of second electrodes and a negative differential resistance (NDR) material. The first electrode and the plurality of second electrodes are connected to the NDR material and the NDR material is to electrically connect the first electrode to one of the plurality of second electrodes when a sufficient voltage is applied between the first electrode and the one of the plurality of second electrodes through the NDR material.
摘要翻译： 电路部件包括第一电极，多个第二电极和负的差分电阻（NDR）材料。 第一电极和多个第二电极连接到NDR材料，并且当在第一电极和多个第二电极之间施加足够的电压时，NDR材料将第一电极电连接到多个第二电极中的一个 的第二电极通过NDR材料。
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公开(公告)号：US20130051121A1
公开(公告)日：2013-02-28
申请号：US13384853
申请日：2010-04-22
申请人： Jianhua Yang , Wei Wu , Qiangfei Xia
发明人： Jianhua Yang , Wei Wu , Qiangfei Xia
CPC分类号： B82Y10/00 , H01L27/1021 , H01L45/08
摘要： Various embodiments of the present invention are directed to nanoscale electronic devices that provide nonvolatile memristive switching. In one aspect, a two-terminal device (600) comprises a first electrode (602), a second electrode (604), and an active region (606) disposed between the first electrode and the second electrode. The active region includes a mobile dopant (608), and a fast drift ionic species (610). The fast drift ionic species drifts into a diode-like electrode/active region interface temporarily increasing conductance across the interface when a write voltage is applied to the two-terminal device to switch the device conductance.
摘要翻译： 本发明的各种实施例涉及提供非易失性忆阻切换的纳米级电子器件。 在一个方面，双端器件（600）包括第一电极（602），第二电极（604）和设置在第一电极和第二电极之间的有源区（606）。 有源区包括移动掺杂剂（608）和快速漂移的离子物质（610）。 当向双端器件施加写入电压以切换器件电导时，快速漂移的离子物质漂移到二极管状电极/有源区接口中，暂时增加跨接口的电导。
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公开(公告)号：US20120138885A1
公开(公告)日：2012-06-07
申请号：US12961214
申请日：2010-12-06
IPC分类号： H01L29/12 , H01L21/326
CPC分类号： H01L45/04 , H01L27/2472 , H01L45/1206 , H01L45/1226 , H01L45/146
摘要： An electrical circuit component includes a first electrode, a plurality of second electrodes and a negative differential resistance (NDR) material. The first electrode and the plurality of second electrodes are connected to the NDR material and the NDR material is to electrically connect the first electrode to one of the plurality of second electrodes when a sufficient voltage is applied between the first electrode and the one of the plurality of second electrodes through the NDR material.
摘要翻译： 电路部件包括第一电极，多个第二电极和负的差分电阻（NDR）材料。 第一电极和多个第二电极连接到NDR材料，并且当在第一电极和多个第二电极之间施加足够的电压时，NDR材料将第一电极电连接到多个第二电极中的一个 的第二电极通过NDR材料。
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公开(公告)号：US20120120714A1
公开(公告)日：2012-05-17
申请号：US13387063
申请日：2010-02-08
申请人： Jianhua Yang , Wei Wu , Gilberto Ribeiro
发明人： Jianhua Yang , Wei Wu , Gilberto Ribeiro
CPC分类号： H01L45/08 , G11C13/0002 , H01L45/1253 , H01L45/146
摘要： Methods and means related to memory resistors are provided. A memristor includes two multi-layer electrodes and an active material layer. One multi-layer electrode forms an Ohmic contact region with the active material layer. The other multi-layer electrode forms a Schottky barrier layer with the active material layer. The active material layer is subject to oxygen vacancy profile reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events.
摘要翻译： 提供了与存储电阻相关的方法和方法。 忆阻器包括两个多层电极和活性材料层。 一个多层电极与活性材料层形成欧姆接触区域。 其他多层电极与活性物质层形成肖特基势垒层。 在施加的电场的影响下，活性物质层经受氧空位轮廓重构。 因此，忆阻器的电阻可以通过施加的编程电压进行调节，并且在编程事件之间是非易失性的。
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公开(公告)号：US20120081945A1
公开(公告)日：2012-04-05
申请号：US12896641
申请日：2010-10-01
申请人： Jianhua Yang , John Paul Strachan , Wei Wu , Janice H. Nickel
发明人： Jianhua Yang , John Paul Strachan , Wei Wu , Janice H. Nickel
CPC分类号： H01L27/101 , G11C7/12 , G11C7/18 , G11C13/0007 , G11C13/0023 , G11C13/0033
摘要： A memory array with graded resistance lines includes a first set of lines intersecting a second set of lines. A line from one of the sets of lines includes a graded resistance along a length of the line.
摘要翻译： 具有分级电阻线的存储器阵列包括与第二组线相交的第一组线。 来自一组线路的线包括沿着该线的长度的分级电阻。
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公开(公告)号：US20110240951A1
公开(公告)日：2011-10-06
申请号：US12751977
申请日：2010-03-31
申请人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16
摘要： A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.
摘要翻译： 忆阻器包括第一电极和第二电极，其以非零角度与第一电极交叉。 有源区设置在第一和第二电极之间。 活性区域有缺陷。 石墨烯或石墨设置在有源区和第一电极之间和/或有源区和第二电极之间。
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