Abstract:
Provided are a laser diode generating passive mode locking that does not contain non-linear sector of an SA, and a method of creating an optical pulse using the same diode. The laser diode includes a DFB sector serving as a reflector and a gain sector. The gain sector is connected to the DFB sector and includes an as-cleaved facet formed at the end of the gain sector. When a current less than a threshold current is applied to the DFB sector to allow the DFB sector to operate as a reflector, passive mode locking occurs swiftly and therefore a sector of the SA is not required, which makes manufacturing simple. Also, it is possible to effectively extend a frequency variable region compared to using of the SA.
Abstract:
A light source has a structure in which a 3-dB beam splitter is integrated with a Febry-Perot laser diode having a cleaved plane. A first waveguide grating and a first refractive index modifier changing a Bragg wavelength of the first waveguide grating are provided at one branch of the 3-dB beam splitter. A second waveguide grating and a second refractive index modifier changing a Bragg wavelength of the second waveguide grating are provided at another branch of the 3-dB beam splitter.
Abstract:
Provided is a wavelength division multiplexed-passive optical network (WDM-PON) apparatus. The WDM-PON includes an optical source unit, an optical mux, and a chirped Bragg grating. The optical source unit generates an optical signal. The optical mux receives the optical signal from the optical source unit through one end of the optical mux, multiplexes the optical signal, and outputs the multiplexed optical signal. The chirped Bragg grating is connected to the other end of the optical mux. The chirped Bragg grating again reflects the optical signal having passed the optical mux to re-input a certain portion of the optical signal into the optical mux and the optical source unit. The optical mux performs a spectrum slicing on the re-inputted optical signal and operates the optical source unit using a channel wavelength of the optical mux as a main oscillation wavelength.
Abstract:
A full 3R (re-timing, re-shaping, re-amplifying) recovery system is provided. In the full 3R recovery system, a self-pulsating laser diode (SP-LD) and an electroabsorption modulator (EAM) are integrated and disposed on a semiconductor substrate.
Abstract:
A wavelength tunable laser diode using a double coupled ring resonator is provided. A new double coupled ring resonator structure is formed by a connection of two ring resonators having different radii so that stable laser oscillation occurs only in a resonant wavelength at which the two ring resonators are simultaneously resonated, and the effective refractive index of the two ring resonators is properly controlled differently for tunable laser oscillation wavelengths. The reproducibility of the optical coupling characteristics of the passive waveguides and the ring resonator can be assured by multi-mode couplers. This results in improved manufacturing productivity of the wavelength tunable laser diode. It is possible to amplify and output an output light without having an effect on oscillation wavelength characteristic by means of an optical amplifier integrated in an output end.
Abstract:
Provided is a signal processor for converting a signal that converts a return to zero (RZ) signal into a non-return to zero (NRZ) signal, in which two 2R (re-amplifying, re-shaping) regenerators are connected in parallel between an input waveguide and an output waveguide with different lengths from each other. The 2R regenerator includes: two semiconductor optical amplifiers having different lengths from each other; and phase control means connected to a short semiconductor optical amplifier. The RZ signal input by a length difference of the waveguide is delayed by a time difference of a half of one bit so that the 2R regenerated NRZ signal can be obtained.
Abstract:
The 3R regeneration system for a retiming, reshaping, and reamplifying an optical signal includes: first and second input ports in which a connected optical signal is input; an interferometer including first and second branches formed on a substrate, split at a common input node, combined at a common output node, semiconductor optical amplifiers in each of the first and second branches, the first branch being connected to the first input port, and the common input node being connected to the second input port; a self-pulsating laser diode monolithically integrated with the interferometer between one of the first input port and the first branch, and the second input port and the common input node on the substrate, receiving an optical signal, and outputting the optical signal regenerated by optical injection locking; and an output port connected to the common output node.
Abstract:
An optical amplifier includes a passive waveguide region and an active waveguide region. The passive waveguide region is configured to receive an incident optical signal and adjust a mode of the optical signal. The active waveguide region is integrated to the passive waveguide region and configured to perform gain modulation on the optical signal received from the passive waveguide region by changing density of carriers in response to a current applied to the active waveguide region. Internal loss of the active waveguide region is adjusted to produce a resonance effect and thereby to increase bandwidth of the active waveguide. Therefore, the optical amplifier can have a wide bandwidth under a low-current condition.
Abstract:
Provided is an optical device module that can improve miniaturization and integration. The optical device module includes a semiconductor optical amplifier having a buried structure and including a first active layer buried in a clad layer disposed on a first substrate, an optical modulator in which a sidewall of a second active layer disposed in a direction of the first active layer on a second substrate junctioned to the first substrate is exposed, the optical modulator having a ridge structure, and at least one multi-mode interference coupler in which the second active layer junctioned to the first active layer is buried in the clad layer, the multi-mode interference coupler sharing the second active layer on the second substrate between the optical modulator and the semiconductor optical amplifier and integrated with the second optical device.
Abstract:
Provided is a semiconductor laser diode having a waveguide lens. The semiconductor laser diode includes at least one first waveguide having a narrow width, at least one second waveguide having a wide width wider, and at least one waveguide lens having an increasing width from the first waveguide toward the second waveguide and connecting the first waveguide to the second waveguide. Sidewalls of the waveguide lens connecting the first waveguide to the second waveguide may be curved. The second waveguide may be a waveguide providing an optical gain.