公开(公告)号：US10040683B2

公开(公告)日：2018-08-07

申请号：US13298944

申请日：2011-11-17

申请人： Jong-hyuk Yoon ,  Duk-hwa Na ,  Young-il Song ,  Dong-kwan Won ,  Byung-hee Hong ,  Na-young Kim

发明人： Jong-hyuk Yoon ,  Duk-hwa Na ,  Young-il Song ,  Dong-kwan Won ,  Byung-hee Hong ,  Na-young Kim

IPC分类号： B32B9/00 ,  B82Y40/00 ,  B82Y30/00 ,  C01B32/182

摘要： A method of fabricating multi-layered graphene includes disposing a first graphene layer on a carrier; disposing at least one second graphene layer on the first graphene layer to form a graphene sheet disposed on the carrier; and transferring the graphene sheet disposed on the carrier onto a substrate, wherein each of the graphene layers which constitute the graphene sheet has at least one damaged region, and the at least one damaged region of each of the graphene layers contacts at least one of non-damaged regions of a graphene layer or graphene layers, of the graphene layers, contacting the each of the graphene layers.

公开(公告)号：US09315001B2

公开(公告)日：2016-04-19

申请号：US13988250

申请日：2011-11-17

申请人： Duk-Hwa Na ,  Jong-Hyuk Yoon ,  Young-Il Song ,  Dong-Kwan Won

发明人： Duk-Hwa Na ,  Jong-Hyuk Yoon ,  Young-Il Song ,  Dong-Kwan Won

IPC分类号： B29C65/00 ,  B32B37/10 ,  B32B38/10 ,  B32B38/14 ,  B32B37/00 ,  C01B31/04 ,  B32B38/18 ,  B65C9/30 ,  B65H19/29

CPC分类号： B32B37/025 ,  B65H19/29 ,  C01B32/186 ,  C01B32/194 ,  Y10T156/1702

摘要： Provided are method and apparatus for transferring graphene. The graphene transferring method includes: a graphene synthesizing operation comprising forming at least one layer of graphene on at least one surface of a catalyst metal film; a substrate film attaching operation comprising contacting an adhesive first surface of the substrate film to the at least one layer of graphene and compressing the catalyst metal film and the substrate film by using a first roller; and a substrate film separating operation comprising separating the substrate film from the catalyst metal film such that the at least one layer of graphene is separated from the catalyst metal film together with the substrate film.

摘要翻译： 提供用于转移石墨烯的方法和装置。 石墨烯转移方法包括：石墨烯合成操作，包括在催化剂金属膜的至少一个表面上形成至少一层石墨烯; 底物膜附着操作，其包括使所述基底膜的粘合剂第一表面与所述至少一层石墨烯接触，并通过使用第一辊压缩所述催化剂金属膜和所述基底膜; 以及基板膜分离操作，其包括将所述基底膜与所述催化剂金属膜分离，使得所述至少一层石墨烯与所述基底膜一起与所述催化剂金属膜分离。

公开(公告)号：US20120234240A1

公开(公告)日：2012-09-20

申请号：US13416071

申请日：2012-03-09

申请人： Dong-Kwan WON ,  Won-Sik NAM

发明人： Dong-Kwan WON ,  Won-Sik NAM

IPC分类号： C23C16/26 ,  C23C16/455 ,  C23C16/46 ,  B82Y40/00

CPC分类号： C23C16/46 ,  B82Y40/00 ,  C23C16/26 ,  C23C16/482 ,  C23C16/545

摘要： A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

摘要翻译： 石墨烯合成室包括：其中放置包括金属薄膜的基板的室壳体; 气体供给单元，其向所述室壳体的内部空间供给至少一种包含碳气体的气体; 主加热单元，其向所述内部空间发射至少一个光以加热所述基板; 以及至少一个辅助加热单元，其吸收所述至少一个光并向衬底发射辐射热。

公开(公告)号：US20120128983A1

公开(公告)日：2012-05-24

申请号：US13298944

申请日：2011-11-17

申请人： Jong-hyuk YOON ,  Duk-hwa NA ,  Young-il SONG ,  Dong-kwan WON ,  Byung-hee HONG ,  Na-young KIM

发明人： Jong-hyuk YOON ,  Duk-hwa NA ,  Young-il SONG ,  Dong-kwan WON ,  Byung-hee HONG ,  Na-young KIM

IPC分类号： B32B9/00 ,  B32B37/06 ,  B32B37/10 ,  B32B37/02 ,  B32B37/14 ,  B82Y30/00

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/182 ,  Y10T156/10 ,  Y10T428/30

摘要： A method of fabricating multi-layered graphene includes disposing a first graphene layer on a carrier; disposing at least one second graphene layer on the first graphene layer to form a graphene sheet disposed on the carrier; and transferring the graphene sheet disposed on the carrier onto a substrate, wherein each of the graphene layers which constitute the graphene sheet has at least one damaged region, and the at least one damaged region of each of the graphene layers contacts at least one of non-damaged regions of a graphene layer or graphene layers, of the graphene layers, contacting the each of the graphene layers.

摘要翻译： 制造多层石墨烯的方法包括在载体上设置第一石墨烯层; 在所述第一石墨烯层上设置至少一个第二石墨烯层以形成设置在所述载体上的石墨烯片; 以及将设置在所述载体上的所述石墨烯片转印到基板上，其中构成所述石墨烯片的每个所述石墨烯层具有至少一个损伤区域，并且所述每个所述石墨烯层的所述至少一个损坏区域与非石墨烯层中的至少一个接触， 石墨烯层的损伤区域或石墨烯层的石墨烯层与石墨烯层中的每一层接触。

公开(公告)号：US20130233480A1

公开(公告)日：2013-09-12

申请号：US13988250

申请日：2011-11-17

申请人： Duk-Hwa Na ,  Jong-Hyuk Yoon ,  Young-Il Song ,  Dong-Kwan Won

发明人： Duk-Hwa Na ,  Jong-Hyuk Yoon ,  Young-Il Song ,  Dong-Kwan Won

IPC分类号： B32B37/00

CPC分类号： B32B37/025 ,  B65H19/29 ,  C01B32/186 ,  C01B32/194 ,  Y10T156/1702

摘要： Provided are method and apparatus for transferring graphene. The graphene transferring method includes: a graphene synthesizing operation comprising forming at least one layer of graphene on at least one surface of a catalyst metal film; a substrate film attaching operation comprising contacting an adhesive first surface of the substrate film to the at least one layer of graphene and compressing the catalyst metal film and the substrate film by using a first roller; and a substrate film separating operation comprising separating the substrate film from the catalyst metal film such that the at least one layer of graphene is separated from the catalyst metal film together with the substrate film.

摘要翻译： 提供了用于转移石墨烯的方法和装置。 石墨烯转移方法包括：石墨烯合成操作，包括在催化剂金属膜的至少一个表面上形成至少一层石墨烯; 底物膜附着操作，其包括使所述基底膜的粘合剂第一表面与所述至少一层石墨烯接触，并通过使用第一辊压缩所述催化剂金属膜和所述基底膜; 以及基板膜分离操作，其包括将所述基底膜与所述催化剂金属膜分离，使得所述至少一层石墨烯与所述基底膜一起与所述催化剂金属膜分离。

公开(公告)号：US07811626B2

公开(公告)日：2010-10-12

申请号：US12328077

申请日：2008-12-04

申请人： Chang-soo Jang ,  Dong-kwan Won ,  Hyoung-ho Roh ,  Jae-chul Ryu

发明人： Chang-soo Jang ,  Dong-kwan Won ,  Hyoung-ho Roh ,  Jae-chul Ryu

IPC分类号： B05D5/12

CPC分类号： H05K1/0366 ,  H05K3/022 ,  H05K2203/1545 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

摘要： Provided is a method of manufacturing a printed circuit board. In an embodiment, the method includes forming a prepreg layer via a reel method, forming a conductive film for forming a circuit pattern on at least one surface of the prepreg layer; and forming a predetermined circuit pattern on the conductive film. In an embodiment, the prepreg layer has a thickness of at most about 0.15 mm and contains a fiber material and a resin material. In an embodiment, the content of the resin material in the prepreg layer is about 70% or less by volume. In an embodiment, the prepreg layer is composed of at least one prepreg layer.

摘要翻译： 提供一种制造印刷电路板的方法。 在一个实施例中，该方法包括通过卷轴方法形成预浸料层，在预浸料层的至少一个表面上形成用于形成电路图案的导电膜; 并在导电膜上形成预定的电路图案。 在一个实施例中，预浸料层具有至多约0.15mm的厚度，并且包含纤维材料和树脂材料。 在一个实施方式中，预浸料层中的树脂材料的含量为约70体积％以下。 在一个实施例中，预浸料层由至少一个预浸料层组成。

公开(公告)号：US07470461B2

公开(公告)日：2008-12-30

申请号：US11244649

申请日：2005-10-05

申请人： Chang-soo Jang ,  Dong-kwan Won ,  Hyoung-ho Roh ,  Jae-chul Ryu

发明人： Chang-soo Jang ,  Dong-kwan Won ,  Hyoung-ho Roh ,  Jae-chul Ryu

IPC分类号： B32B3/00

CPC分类号： H05K1/0366 ,  H05K3/022 ,  H05K2203/1545 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

摘要： Provided is a method of manufacturing a printed circuit board. In an embodiment, the method includes forming a prepreg layer via a reel method, forming a conductive film for forming a circuit pattern on at least one surface of the prepreg layer; and forming a predetermined circuit pattern on the conductive film. In an embodiment, the prepreg layer has a thickness of at most about 0.15 mm and contains a fiber material and a resin material. In an embodiment, the content of the resin material in the prepreg layer is about 70% or less by volume. In an embodiment, the prepreg layer is composed of at least one prepreg layer.

摘要翻译： 提供一种制造印刷电路板的方法。 在一个实施例中，该方法包括通过卷轴方法形成预浸料层，在预浸料层的至少一个表面上形成用于形成电路图案的导电膜; 并在导电膜上形成预定的电路图案。 在一个实施例中，预浸料层具有至多约0.15mm的厚度，并且包含纤维材料和树脂材料。 在一个实施方式中，预浸料层中的树脂材料的含量为约70体积％以下。 在一个实施例中，预浸料层由至少一个预浸料层组成。

公开(公告)号：US20060038280A1

公开(公告)日：2006-02-23

申请号：US11133727

申请日：2005-05-20

申请人： Chang-soo Jang ,  Jae-chul Ryu ,  Dong-kwan Won

发明人： Chang-soo Jang ,  Jae-chul Ryu ,  Dong-kwan Won

IPC分类号： H01L23/12 ,  H01L23/48 ,  H01L23/02 ,  H05K1/00

CPC分类号： H01L23/49838 ,  H01L23/13 ,  H01L23/145 ,  H01L23/49827 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/49175 ,  H01L2224/73215 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01087 ,  H01L2924/07802 ,  H01L2924/15311 ,  H01L2924/19041 ,  H05K1/0271 ,  H05K3/0052 ,  H05K3/28 ,  H05K2201/068 ,  H05K2201/09781 ,  H05K2203/1572 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A parent or master substrate for a semiconductor package is provided, which can provide a plurality of unit substrates by cutting into pieces for producing a semiconductor device. The parent substrate includes an insulation layer, conductor patterns formed on first and second surfaces of the insulation layer, and PSR (photo solder resist) layers respectively formed on the first and second surfaces of the insulation layers and covering the conductor patterns. The parent substrate includes an upper part and a lower part divided by a reference surface which passes through the center of the insulation layer. When an equivalent thermal expansion coefficient αupper of the upper part is defined by the Equation of α upper = ∑ i = 1 n ⁢ α i × E i × v i ∑ i = 1 n ⁢ E i × v i , where αi is respective thermal expansion coefficients of, Ei is respective elastic moduli of, and vi is respective volume ratios of first through nth components constituting the upper part (e.g., insulation layer, conductor patterns, and PSR layers of the upper part), and an equivalent thermal expansion coefficient αlower of the lower part is defined by the Equation of α lower = ∑ j = 1 m ⁢ α j × E j × v j ∑ j = 1 m ⁢ E j × v j , where αj is respective thermal expansion coefficients of, Ej is respective elastic moduli of, and vj is respective volume ratios of first through mth components constituting the lower part (e.g., insulation layer, conductor patterns, and PSR layers of the lower part), a equivalent thermal expansion ratio (αupper/αlower) of αupper to αlower is selected to be within a range of 0.975 through 1.165.

公开(公告)号：US20090087547A1

公开(公告)日：2009-04-02

申请号：US12328077

申请日：2008-12-04

申请人： Chang-soo Jang ,  Jae-chul Ryu ,  Hyoung-ho Roh ,  Dong-kwan Won

发明人： Chang-soo Jang ,  Jae-chul Ryu ,  Hyoung-ho Roh ,  Dong-kwan Won

IPC分类号： H05K3/04

CPC分类号： H05K1/0366 ,  H05K3/022 ,  H05K2203/1545 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

摘要： Provided is a method of manufacturing a printed circuit board. In an embodiment, the method includes forming a prepreg layer via a reel method, forming a conductive film for forming a circuit pattern on at least one surface of the prepreg layer; and forming a predetermined circuit pattern on the conductive film. In an embodiment, the prepreg layer has a thickness of at most about 0.15 mm and contains a fiber material and a resin material. In an embodiment, the content of the resin material in the prepreg layer is about 70% or less by volume. In an embodiment, the prepreg layer is composed of at least one prepreg layer.

摘要翻译： 提供一种制造印刷电路板的方法。 在一个实施例中，该方法包括通过卷轴方法形成预浸料层，在预浸料层的至少一个表面上形成用于形成电路图案的导电膜; 并在导电膜上形成预定的电路图案。 在一个实施例中，预浸料层具有至多约0.15mm的厚度，并且包含纤维材料和树脂材料。 在一个实施方式中，预浸料层中的树脂材料的含量为约70体积％以下。 在一个实施例中，预浸料层由至少一个预浸料层组成。

公开(公告)号：US07199462B2

公开(公告)日：2007-04-03

申请号：US11133727

申请日：2005-05-20

申请人： Chang-soo Jang ,  Jae-chul Ryu ,  Dong-kwan Won

发明人： Chang-soo Jang ,  Jae-chul Ryu ,  Dong-kwan Won

IPC分类号： H01L23/12

CPC分类号： H01L23/49838 ,  H01L23/13 ,  H01L23/145 ,  H01L23/49827 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/49175 ,  H01L2224/73215 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01087 ,  H01L2924/07802 ,  H01L2924/15311 ,  H01L2924/19041 ,  H05K1/0271 ,  H05K3/0052 ,  H05K3/28 ,  H05K2201/068 ,  H05K2201/09781 ,  H05K2203/1572 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A parent or master substrate for a semiconductor package is provided, which can provide a plurality of unit substrates by cutting into pieces for producing a semiconductor device. The parent substrate includes an insulation layer, conductor patterns formed on first and second surfaces of the insulation layer, and PSR (photo solder resist) layers respectively formed on the first and second surfaces of the insulation layers and covering the conductor patterns. The parent substrate includes an upper part and a lower part divided by a reference surface which passes through the center of the insulation layer. When an equivalent thermal expansion coefficient αupper of the upper part is defined by the Equation of α upper = ∑ i = 1 n ⁢ α i × E i × v i ∑ i = 1 n ⁢ E i × v i , where αi is respective thermal expansion coefficients of, Ei is respective elastic moduli of, and vi is respective volume ratios of first through nth components constituting the upper part (e.g., insulation layer, conductor patterns, and PSR layers of the upper part), and an equivalent thermal expansion coefficient αlower of the lower part is defined by the Equation of α lower = ∑ j = 1 m ⁢ α j × E j × v j ∑ j = 1 m ⁢ E j × v j , where αj is respective thermal expansion coefficients of, Ej is respective elastic moduli of, and vj is respective volume ratios of first through mth components constituting the lower part (e.g., insulation layer, conductor patterns, and PSR layers of the lower part), a equivalent thermal expansion ratio (αupper/αlower) of αupper to αlower is selected to be within a range of 0.975 through 1.165.

摘要翻译： 提供了一种用于半导体封装的母板或母板，其可以通过切割成用于制造半导体器件的片来提供多个单元基板。 母基板包括绝缘层，形成在绝缘层的第一和第二表面上的导体图案，以及分别形成在绝缘层的第一和第二表面上并覆盖导体图案的PSR（光阻焊剂）层。 母基片包括由穿过绝缘层的中心的参考表面划分的上部和下部。 当上部的等效热膨胀系数α<上限由等式定义时