Abstract:
This disclosure provides a method of disinfecting a surface within an area, comprising the steps of: a) dispersing into the area a multiplicity of droplets of a first aqueous composition comprising a first iodine reactant compound that is either a peroxide compound or an iodine salt compound: b) allowing sufficient time for the first aqueous composition to distribute throughout the area, and to deposit and coalesce into a layer upon the surface: c) dispersing into the area a multiplicity of droplets of a second aqueous composition comprising a second iodine reactant compound that is the other of the first iodine reactant compound, and: d) again allowing sufficient time for the droplets of the second aqueous composition to deposit onto the coalesced layer of the first aqueous composition, thereby forming iodine and other iodine biocides in situ and disinfecting the surface.
Abstract:
The present application relates to a compact liquid detergent composition comprising a mixture of chelants suitable for use in laundry cleaning.
Abstract:
A solid-state imager is mounted at a point-of-transaction workstation for capturing images of one- and two-dimensional indicia and is operated at high speed to resist image blurring due to relative movement between the target and the imager. Dedicated hardware assistance and computation resources are allocated to decode multiple, continuous and simultaneous video streams from multiple imagers at the workstation.
Abstract:
This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.
Abstract:
Method for recovering a desired component from a waste gas comprising (a) at an operating facility, introducing a waste gas comprising the desired component and one or more undesired components into an adsorber containing adsorbent material selective for the desired component, adsorbing at least a portion of the desired component therein, (b) terminating flow of waste gas into the adsorber; and (c) recovering and concentrating the desired component by either (1) isolating the adsorber, transporting the adsorber to a central processing facility, or (2) withdrawing from the adsorber an intermediate gas enriched in the desired component, compressing the intermediate gas and storing it in a vessel, isolating the vessel, transporting the vessel to a central processing facility to provide a concentrated product further enriched in the desired component.
Abstract:
This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.
Abstract:
A system and a process for providing acetylene, preferably at a high purity level (e.g., comprising 100 parts per million (“ppm”), or 10 ppm, or 1 ppm, or 100 parts per billion (“ppb”), or 10 ppb, or 1 ppb or less of solvent), to a point of use, such as a semiconductor manufacturing process, is described herein. In one aspect, there is provided a process for providing a process for providing a high purity acetylene comprising 100 ppm or less solvent to a point of use comprising: providing an acetylene feed stream comprising acetylene and solvent at a temperature ranging from 20° C. to −50° C.; and introducing the acetylene feed stream to a purifier at a temperature ranging from −50° C. to 30° C. to remove at least a portion of the solvent contained therein and provide the high purity acetylene.
Abstract:
The present invention relates to a non-unit dose liquid laundry detergent composition suitable for use in a single-compartment container comprising: (a) detersive surfactant; (b) from 0 wt % to 20 wt % water; (c) source of peracid; (d) optionally, from 0 wt % to 5 wt % citric acid; and (e) optionally, from 0 wt % to 5 wt % fatty acid, wherein the pH of the undiluted composition is at least 0.5 pH units higher than the pKa of the source of peracid, and wherein upon dilution in de-ionized water to a concentration of 1 g/L at 20° C., the composition forms a wash liquor, wherein the equilibrium pH of the wash liquor is at least 0.5 pH units lower than the pKa of the source of peracid.
Abstract:
Performance of an imaging reader for electro-optically reading direct part markings on workpieces is enhanced by uniformly illuminating the markings. An illuminator is operative for emitting illumination light of greater and lesser intensity toward the indicia. A diffuser is operative for diffusing the illumination light en route to the indicia. The diffuser includes a plurality of diffusing elements adjacent the illuminator for diffusing the illumination light of greater intensity more than the illumination light of lesser intensity.
Abstract:
Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain embodiments, the process solution may reduce post-development defects such as pattern collapse or line width roughness when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of defects such as pattern collapse and/or line width roughness on a plurality of photoresist coated substrates employing the process solution of the present invention.