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428 条记录 (耗时 0.022 秒)

    Operation method of multi-bits read only memory
    1.
    发明授权
    Operation method of multi-bits read only memory 有权

    公开(公告)号：US11837299B2

    公开(公告)日：2023-12-05

    申请号：US17716122

    申请日：2022-04-08

    申请人： Chen-Feng Chang

    发明人： Chen-Feng Chang ,  Tien-Sheng Chao

    IPC分类号： G11C16/04 ,  G11C17/12 ,  G11C11/56 ,  H10B20/20 ,  H10B43/00

    CPC分类号： G11C17/12 ,  G11C11/5671 ,  G11C16/0466 ,  H10B20/20 ,  H10B43/00

    摘要： An operation method of a multi-bits read only memory includes a step of applying a gate voltage to a conductive gate, a first voltage to a first electrode, and a second voltage to a second electrode. The multi-bits read only memory of the present invention includes a substrate and a transistor structure with the conductive gate mounted between the first electrode and the second electrode, a first oxide located between the first electrode and the conductive gate, and a second oxide located between the second electrode and the conductive gate. The present invention creates an initial state wherein the transistor structure is not conducting, an intermediate state wherein the first oxide is punched through by the first voltage, and a fully opened state wherein both the first oxide and the second oxide are punched through. The aforementioned states allow storage of multiple bits on the read only memory.

    OPERATION METHOD OF MULTI-BITS READ ONLY MEMORY
    2.
    发明申请
    OPERATION METHOD OF MULTI-BITS READ ONLY MEMORY 有权

    公开(公告)号：US20220343986A1

    公开(公告)日：2022-10-27

    申请号：US17722534

    申请日：2022-04-18

    申请人： Chen-Feng CHANG

    发明人： Chen-Feng CHANG ,  Tien-Sheng CHAO

    IPC分类号： G11C17/12 ,  H01L27/11563 ,  H01L27/112 ,  G11C11/56 ,  G11C16/04

    摘要： An operation method of a multi-bits read only memory includes a step of applying a gate voltage to a conductive gate, a first voltage to a first electrode, and a second voltage to a second electrode. The multi-bits read only memory of the present invention includes a substrate and a transistor structure with the conductive gate mounted between the first electrode and the second electrode. A multiplicity of M nanowire channels is mounted between the first electrode and the second electrode, and M is a positive integer greater than one. The present invention breaks multiple states of the multi-bits read only memory. The multiple states are programmable and include an ith state, and 1

    Mechanical parking garage
    3.
    发明授权
    Mechanical parking garage 有权

    公开(公告)号：US10794077B1

    公开(公告)日：2020-10-06

    申请号：US16708682

    申请日：2019-12-10

    申请人： Pu-Lin Chang ,  Chih-Feng Chang

    发明人： Pu-Lin Chang ,  Chih-Feng Chang

    IPC分类号： E04H6/22 ,  E04H6/20

    摘要： A mechanical parking garage includes a plurality of pallets, a parking system including a rail track unit and a plurality of tower units, and a transporting system. Each tower unit is mounted on and slidable along the rail track unit, and has a plurality of first parking spaces, each of which is disposed for storing one of the pallets. The transporting system includes a rail mechanism mounted above the parking system, and a transporting mechanism mounted to the rail mechanism and being horizontally movable. Any adjacent two of the tower units are movable relative to each other between approximate state and a distal state. At the distal state, the adjacent two of the tower units define a transporting aisle therebetween.

    Anti-hepatitis C composition and method for preparing drug for inhibiting hepatitis C viruses or treating hepatitis C
    6.
    发明授权
    Anti-hepatitis C composition and method for preparing drug for inhibiting hepatitis C viruses or treating hepatitis C 有权
    抗丙型肝炎组合物及制备丙型肝炎病毒药物或治疗丙型肝炎的方法

    公开(公告)号：US08802662B2

    公开(公告)日：2014-08-12

    申请号：US12573116

    申请日：2009-10-04

    申请人： Lain-Tze Lee ,  Shau-Feng Chang ,  Hui-Ping Tsai ,  Zong-Keng Kuo ,  Chen-Fang Chung

    发明人： Lain-Tze Lee ,  Shau-Feng Chang ,  Hui-Ping Tsai ,  Zong-Keng Kuo ,  Chen-Fang Chung

    IPC分类号： A61K31/58

    CPC分类号： A61K31/58 ,  C07J71/0005 ,  C07J71/0021

    摘要： The invention provides an anti-hepatitis C composition including: an effective amount of limonoid compound, wherein the structure of the limonoid compound is shown as Structure (I): where R1 comprises H or OAc and R2 comprises H or COCH(CH3)2; and a pharmaceutically acceptable carrier or salt, and the anti-hepatitis C composition is used for inhibiting hepatitis C virus or treating hepatitis C. The invention also provides a method for treating hepatitis C and a method for preparing a drug for inhibiting hepatitis C viruses or treating hepatitis C.

    摘要翻译： 本发明提供了一种抗丙型肝炎组合物，其包括：有效量的柠檬醛化合物，其中所述类柠檬醛化合物的结构显示为结构式（I）：其中R 1包含H或OAc，R 2包含H或COCH（CH 3）2; 和药学上可接受的载体或盐，抗丙型肝炎组合物用于抑制丙型肝炎病毒或治疗丙型肝炎。本发明还提供了一种治疗丙型肝炎的方法和一种制备用于抑制丙型肝炎病毒或 治疗丙型肝炎

    Process for reducing specific energy demand during refining of thermomechanical and chemi-thermomechanical pulp
    7.
    发明授权
    Process for reducing specific energy demand during refining of thermomechanical and chemi-thermomechanical pulp 有权
    在机械和化学机械纸浆精炼期间减少比能量需求的方法

    公开(公告)号：US08673113B2

    公开(公告)日：2014-03-18

    申请号：US12797585

    申请日：2010-06-09

    申请人： Rodger R. Beatson ,  Xue Feng Chang

    发明人： Rodger R. Beatson ,  Xue Feng Chang

    IPC分类号： D21B1/14 ,  D21B1/16 ,  D21C9/16

    CPC分类号： D21B1/14 ,  D21B1/16 ,  D21C9/1042 ,  D21C9/1047 ,  D21C9/163

    摘要： A method for producing thermomechanical or chemi-thermomechanical pulp is provided. The process is characterized as having a reduced specific energy demand during refining. The process involves processing a pretreated wood material using one or more high consistency refining steps to produce a first pulp, optionally applying a chelating agent to the first pulp during HC refining to produce a stabilized pulp and treating the first or stabilized pulp with an alkaline-peroxide liquor to produce a treated pulp. The treated pulp is then processed by one or more second low consistency refining steps. Alternatively, the first pulp or stabilized pulp may be divided into a primary and secondary stream. The primary stream is treated with alkaline-peroxide liquor to produce a treated pulp. The secondary stream is processed using a secondary HC refining step to produce a partially refined pulp, and removing latency of the partially refined pulp and the treated pulp is removed in a common location. The treated pulp and the partially treated pulp is processed by one or more than one second low consistency refining step to produce a final pulp. The methods utilize less energy when compared with a method for producing pulp that requires both primary and secondary high consistency refining stages.

    摘要翻译： 提供了一种生产热机械或化学热机械纸浆的方法。 该方法的特征在于在精炼期间具有降低的比能量需求。 该方法包括使用一个或多个高浓度精制步骤处理预处理的木材材料以产生第一纸浆，任选地在HC精炼过程中向第一纸浆施加螯合剂以产生稳定的纸浆，并用碱溶液处理第一或稳定的纸浆， 过氧化物液体以产生经处理的纸浆。 然后处理的纸浆通过一个或多个第二低浓度精制步骤进行处理。 或者，第一纸浆或稳定纸浆可以分成初级和次级流。 用碱过氧化物液处理初级流以产生经处理的纸浆。 使用二次HC精制步骤处理二次流以产生部分精制纸浆，并且在共同位置除去部分精制纸浆和经处理的纸浆的潜伏期。 经处理的纸浆和部分处理的纸浆通过一个或多于一个第二低浓度精炼步骤进行处理以产生最终纸浆。 当与需要初级和次级高浓度精炼阶段的生产纸浆的方法相比时，该方法使用较少的能量。

    Systems and methods for laser pulse equalization
    8.
    发明授权
    Systems and methods for laser pulse equalization 有权
    激光脉冲均衡的系统和方法

    公开(公告)号：US08599890B2

    公开(公告)日：2013-12-03

    申请号：US12054811

    申请日：2008-03-25

    申请人： Yunlong Sun ,  Feng Chang

    发明人： Yunlong Sun ,  Feng Chang

    IPC分类号： H01S3/13

    CPC分类号： H01S3/0941 ,  H01S3/042 ,  H01S3/094076 ,  H01S3/10046 ,  H01S3/10069 ,  H01S3/1024 ,  H01S3/1068 ,  H01S3/117 ,  H01S3/1306

    摘要： Systems and methods provide laser pulse equalization at different pulse repetition frequencies (PRFs). After initially pumping a lasing medium from a first pumping level to a peak pumping level, a controller may cause a pump source to continue pumping the lasing medium according to a pulse equalization pumping curve. The equalization pumping curve may be determined based on testing laser pulse parameters at different PRFs to achieve an optimal equalization result of the pulse parameters. The optimization metric used to evaluate various equalization pumping curves may include a consistency of the pulse energy level, peak power level, and/or pulse width of the laser under different PRFs. The equalization pumping curve may be a descending curve from the peak pumping level to the first pumping level. The equalization pumping curve may be a linearly declining curve, a substantially exponentially declining curve, a parametrically declining curve, or any other curve type.

    摘要翻译： 系统和方法提供不同脉冲重复频率（PRF）的激光脉冲均衡。 在初始将激光介质从第一泵浦电平泵送到峰值泵浦电平之后，控制器可以使泵浦源根据脉冲均衡泵送曲线继续泵浦激光介质。 可以基于在不同PRF下测试激光脉冲参数来确定均衡泵送曲线，以实现脉冲参数的最佳均衡结果。 用于评估各种均衡泵送曲线的优化度量可以包括不同PRF下的激光器的脉冲能级，峰值功率电平和/或脉冲宽度的一致性。 均衡泵送曲线可以是从峰值泵送电平到第一泵浦电平的下降曲线。 均衡泵送曲线可以是线性下降曲线，基本上呈指数下降曲线，参数下降曲线或任何其它曲线类型。

    ELECTROSTATIC DISCHARGE (ESD) GUARD RING PROTECTIVE STRUCTURE
    9.
    发明申请
    ELECTROSTATIC DISCHARGE (ESD) GUARD RING PROTECTIVE STRUCTURE 有权
    静电放电（ESD）防护环保护结构

    公开(公告)号：US20130277745A1

    公开(公告)日：2013-10-24

    申请号：US13452991

    申请日：2012-04-23

    申请人： Tsung-Che TSAI ,  Jam-Wem LEE ,  Yi-Feng CHANG

    发明人： Tsung-Che TSAI ,  Jam-Wem LEE ,  Yi-Feng CHANG

    IPC分类号： H01L27/06

    CPC分类号： H01L27/0259 ,  H01L21/761 ,  H01L27/0277 ,  H01L27/0629

    摘要： An ESD protection circuit includes a MOS transistor of a first type, a MOS transistor of a second type, an I/O pad, and first, second, and third guard rings of the first, second, and first types, respectively. The MOS transistor of the first type has a source coupled to a first node having a first voltage, and a drain coupled to a second node. The MOS transistor of the second type has a drain coupled to the second node, and a source coupled to a third node having a second voltage lower than the first voltage. The I/O pad is coupled to the second node. The first, second, and third guard rings are positioned around the MOS transistor of the second type.

    摘要翻译： ESD保护电路分别包括第一类型的MOS晶体管，第二类型的MOS晶体管，第二类型的MOS晶体管，I / O焊盘以及第一，第二和第一类型的第一，第二和第三保护环。 第一类型的MOS晶体管具有耦合到具有第一电压的第一节点的源极和耦合到第二节点的漏极。 第二类型的MOS晶体管具有耦合到第二节点的漏极，以及耦合到具有低于第一电压的第二电压的第三节点的源极。 I / O焊盘耦合到第二节点。 第一，第二和第三保护环围绕第二类型的MOS晶体管定位。

    High-Voltage Mosfets Having Current Diversion Region in Substrate Near Fieldplate
    10.
    发明申请
    High-Voltage Mosfets Having Current Diversion Region in Substrate Near Fieldplate 有权
    高压滤波器在底板附近有电流导流区域

    公开(公告)号：US20130093010A1

    公开(公告)日：2013-04-18

    申请号：US13271342

    申请日：2011-10-12

    申请人： Yun-Pei Huang ,  Yi-Feng Chang ,  Jam-Wem Lee

    发明人： Yun-Pei Huang ,  Yi-Feng Chang ,  Jam-Wem Lee

    IPC分类号： H01L29/78

    CPC分类号： H01L29/0653 ,  H01L29/063 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42368 ,  H01L29/7816

    摘要： To limit or prevent current crowding, various HV-MOSFET embodiments include a current diversion region disposed near a drain region of an HV-MOSFET and near an upper surface of the semiconductor substrate. In some embodiments, the current diversion region is disposed near a field plate of the HV-MOSFET, wherein the field plate can also help to reduce or “smooth” electric fields near the drain to help limit current crowding. In some embodiments, the current diversion region is a p-doped, n-doped, or intrinsic region that is at a floating voltage potential. This current diversion region can push current deeper into the substrate of the HV-MOSFET (relative to conventional HV-MOSFETs), thereby reducing current crowding during ESD events. By reducing current crowding, the current diversion region makes the HV-MOSFETs disclosed herein more impervious to ESD events and, therefore, more reliable in real-world applications.

    摘要翻译： 为了限制或防止电流拥挤，各种HV-MOSFET实施例包括设置在HV-MOSFET的漏极区附近并且在半导体衬底的上表面附近的电流分流区域。 在一些实施例中，电流引流区域设置在HV-MOSFET的场板附近，其中场板还可以帮助减少或“平滑”漏极附近的电场，以帮助限制电流拥挤。 在一些实施例中，电流分流区域是处于浮置电压电位的p掺杂，n掺杂或本征区域。 该电流分流区可以将电流深度推入HV-MOSFET的衬底（相对于传统HV-MOSFET），从而减少ESD事件期间的电流拥挤。 通过减少电流拥挤，电流分流区域使得本文公开的HV-MOSFET更加不可避免地存在ESD事件，因此在现实世界的应用中更可靠。