公开(公告)号：US07663222B2

公开(公告)日：2010-02-16

申请号：US11342294

申请日：2006-01-27

申请人： Gerhard Lohninger ,  Ulrich Krumbein

发明人： Gerhard Lohninger ,  Ulrich Krumbein

IPC分类号： H01L23/48

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L23/3114 ,  H01L24/05 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/0556 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/13 ,  H01L2224/131 ,  H01L2224/16105 ,  H01L2224/16238 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12043 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00012

摘要： The semiconductor device includes a semiconductor body having a first and an opposite second main surface and side faces connecting the main surfaces, a circuit region in the semiconductor body adjacent to the first main surface, having a circuit contact terminal, a metallization region extending from the circuit contact terminal on the first main surface onto a side face of the semiconductor body to provide an exposed contacting region on the side face of the semiconductor body, and an insulation layer arranged between the metallization region and the semiconductor body, the insulation layer having an opening for electrically connecting the circuit contact terminal to the metallization region.

摘要翻译： 半导体器件包括具有第一和相对的第二主表面和连接主表面的侧面的半导体本体，与第一主表面相邻的半导体本体中的电路区域，具有电路接触端子，从该第二主表面延伸的金属化区域 在半导体主体的侧面上设置第一主表面上的电路接触端子，以在半导体主体的侧面上提供暴露的接触区域，以及布置在金属化区域和半导体本体之间的绝缘层，绝缘层具有 用于将电路接触端子电连接到金属化区域的开口。

公开(公告)号：US06242987B1

公开(公告)日：2001-06-05

申请号：US09613034

申请日：2000-07-10

申请人： Klaus-Jürgen Schöpf ,  Gerhard Lohninger ,  Lothar Musiol

发明人： Klaus-Jürgen Schöpf ,  Gerhard Lohninger ,  Lothar Musiol

IPC分类号： H03B518

CPC分类号： H03B5/1847

摘要： An oscillator structure includes at least one oscillator circuit and at least one resonator. The oscillator circuit is disposed on a support and the resonator is situated essentially within the support and/or is a constituent part of the support. The resonator is preferably formed by an electrical conductor and the oscillator circuit is preferably formed by an integrated electronic circuit.

摘要翻译： 振荡器结构包括至少一个振荡器电路和至少一个谐振器。 振荡器电路设置在支撑件上，并且谐振器基本上位于支撑件内和/或作为支撑件的组成部分。 谐振器优选地由电导体形成，并且振荡器电路优选地由集成电子电路形成。

公开(公告)号：US08497558B2

公开(公告)日：2013-07-30

申请号：US13183272

申请日：2011-07-14

申请人： Ulrich Krumbein ,  Gerhard Lohninger ,  Alfons Dehe

发明人： Ulrich Krumbein ,  Gerhard Lohninger ,  Alfons Dehe

IPC分类号： G01L9/00 ,  H01L21/00

CPC分类号： H01L25/16 ,  H01L23/10 ,  H01L23/4926 ,  H01L23/66 ,  H01L25/165 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： In an embodiment, a semiconductor device includes a semiconductor substrate. The semiconductor substrate has a first cavity disposed through it, and conductive material covers at least the bottom portion of the first cavity. An integrated circuit is disposed on the top surface of the conductive material. The device further includes a cap disposed on the top surface of the substrate, such that a cavity disposed on a surface of the cap overlies the first cavity in the substrate.

摘要翻译： 在一个实施例中，半导体器件包括半导体衬底。 半导体衬底具有通过其设置的第一腔，并且导电材料至少覆盖第一空腔的底部。 集成电路设置在导电材料的顶表面上。 该装置还包括设置在基板的顶表面上的盖，使得设置在盖的表面上的空腔覆盖在基板中的第一空腔上。

公开(公告)号：US6069561A

公开(公告)日：2000-05-30

申请号：US211108

申请日：1998-12-14

申请人： Klaus-Jurgen Schopf ,  Gerhard Lohninger

发明人： Klaus-Jurgen Schopf ,  Gerhard Lohninger

IPC分类号： G01S13/56 ,  G01S13/86 ,  H05B37/02 ,  G08B13/18

CPC分类号： G01S13/56 ,  H05B37/0227 ,  G01S13/86

摘要： An automatic lamp control device in which a Doppler radar module, a switching unit for switching a lamp circuit on and off, a circuit configuration for evaluating Doppler radar module signals and for producing signals for controlling the switching unit, and a power supply unit for supplying current to the Doppler radar module and to the circuit configuration are provided on a printed circuit board configuration. The lamp control device reacts to movements within the transmitting and receiving range of the Doppler radar module. The range is independent of the ambient temperature. The lamp control device can be configured to save space, in such a way that it can be integrated completely in a standard flush-mounted box.

摘要翻译： 一种自动灯控制装置，其中多普勒雷达模块，用于切换灯电路的开和关的开关单元，用于评估多普勒雷达模块信号并产生用于控制切换单元的信号的电路配置;以及电源单元，用于供应 提供给印刷电路板配置的电流到多普勒雷达模块和电路配置。 灯控制装置对多普勒雷达模块的发射和接收范围内的运动做出反应。 该范围与环境温度无关。 灯控制装置可以被配置为节省空间，使得其可以完全集成在标准嵌入式盒中。

公开(公告)号：US5761616A

公开(公告)日：1998-06-02

申请号：US769323

申请日：1996-12-18

申请人： Gerhard Lohninger

发明人： Gerhard Lohninger

IPC分类号： G01S7/28 ,  G01S7/03 ,  G01S7/285 ,  H03D9/06 ,  H04B1/26

CPC分类号： H03D9/0633 ,  G01S7/032

摘要： A frequency mixer for a Doppler radar module with directional recognition, can be operated with a single transmitting and receiving antenna. It is thereby possible to create a Doppler radar module with low space requirements even for transmitting and receiving frequencies below 5 GHz. In the frequency mixer, a first microstrip line is coupled to a first terminal of a first diode and a second microstrip line is coupled to a first terminal of a second diode. The two microstrip lines are connected to each other through a capacitor. An antenna is coupled to the first microstrip line and an oscillator is coupled to the second microstrip line. Second terminals of each of the diodes are connected to a fixed potential in an electrically conductive manner. A phase comparator is coupled to the two microstrip lines.

摘要翻译： 用于具有方向识别的多普勒雷达模块的混频器可以使用单个发射和接收天线进行操作。 因此，即使在低于5GHz的发射和接收频率下，也可以创建具有低空间要求的多普勒雷达模块。 在混频器中，第一微带线耦合到第一二极管的第一端子，第二微带线耦合到第二二极管的第一端子。 两条微带线通过电容器相互连接。 天线耦合到第一微带线并且振荡器耦合到第二微带线。 每个二极管的第二端子以导电方式连接到固定电位。 相位比较器耦合到两条微带线。

公开(公告)号：US20130015467A1

公开(公告)日：2013-01-17

申请号：US13183272

申请日：2011-07-14

申请人： Ulrich Krumbein ,  Gerhard Lohninger ,  Alfons Dehe

发明人： Ulrich Krumbein ,  Gerhard Lohninger ,  Alfons Dehe

IPC分类号： H01L29/16 ,  H01L29/772 ,  H01L23/48

CPC分类号： H01L25/16 ,  H01L23/10 ,  H01L23/4926 ,  H01L23/66 ,  H01L25/165 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： In an embodiment, a semiconductor device includes a semiconductor substrate. The semiconductor substrate has a first cavity disposed through it, and conductive material covers at least the bottom portion of the first cavity. An integrated circuit is disposed on the top surface of the conductive material. The device further includes a cap disposed on the top surface of the substrate, such that a cavity disposed on a surface of the cap overlies the first cavity in the substrate.

摘要翻译： 在一个实施例中，半导体器件包括半导体衬底。 半导体衬底具有通过其设置的第一腔，并且导电材料至少覆盖第一空腔的底部。 集成电路设置在导电材料的顶表面上。 该装置还包括设置在基板的顶表面上的盖，使得设置在盖的表面上的空腔覆盖在基板中的第一空腔上。

公开(公告)号：US20060197187A1

公开(公告)日：2006-09-07

申请号：US11342294

申请日：2006-01-27

申请人： Gerhard Lohninger ,  Ulrich Krumbein

发明人： Gerhard Lohninger ,  Ulrich Krumbein

IPC分类号： H01L27/082

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L23/3114 ,  H01L24/05 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/0556 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/13 ,  H01L2224/131 ,  H01L2224/16105 ,  H01L2224/16238 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12043 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00012

摘要： The semiconductor device includes a semiconductor body having a first and an opposite second main surface and side faces connecting the main surfaces, a circuit region in the semiconductor body adjacent to the first main surface, having a circuit contact terminal, a metallization region extending from the circuit contact terminal on the first main surface onto a side face of the semiconductor body to provide an exposed contacting region on the side face of the semiconductor body, and an insulation layer arranged between the metallization region and the semiconductor body, the insulation layer having an opening for electrically connecting the circuit contact terminal to the metallization region.

摘要翻译： 半导体器件包括具有第一和相对的第二主表面和连接主表面的侧面的半导体本体，与第一主表面相邻的半导体本体中的电路区域，具有电路接触端子，从该第二主表面延伸的金属化区域 在半导体主体的侧面上设置第一主表面上的电路接触端子，以在半导体主体的侧面上提供暴露的接触区域，以及布置在金属化区域和半导体本体之间的绝缘层，绝缘层具有 用于将电路接触端子电连接到金属化区域的开口。

公开(公告)号：US06218906B1

公开(公告)日：2001-04-17

申请号：US09520278

申请日：2000-03-06

申请人： Gerhard Lohninger

发明人： Gerhard Lohninger

IPC分类号： H03F304

CPC分类号： H03F1/22 ,  H03F1/302 ,  H03F2200/481 ,  H03F2200/483

摘要： An amplifier circuit has a first transistor and a second transistor of a first conductivity type, which are operated in a cascode circuit together with a first resistor. In addition, the amplifier circuit includes a first capacitor, which precedes the control input of the first transistor. A third transistor of a second conductivity type is provided, whose control input is connected to one end of the controlled path of the second transistor and whose controlled path is connected on one end to a second supply potential. A fourth transistor of the second conductivity type is provided, whose control input is connected to the other end of the controlled path of the third transistor and whose controlled path is connected on one end to the control input of the third transistor. A second resistor is connected between the control input of the fourth transistor and one terminal of the first capacitor. Finally, a third resistor is connected between the other end of the controlled path of the fourth transistor and the other terminal of the first capacitor.

摘要翻译： 放大器电路具有第一导电类型的第一晶体管和第二晶体管，它们与第一电阻一起在共源共栅电路中工作。 此外，放大器电路包括在第一晶体管的控制输入之前的第一电容器。 提供了第二导电类型的第三晶体管，其控制输入连接到第二晶体管的受控路径的一端，并且其受控路径在一端连接到第二电源电位。 提供第二导电类型的第四晶体管，其控制输入连接到第三晶体管的受控路径的另一端，并且其一端连接到第三晶体管的控制输入端。 第二电阻器连接在第四晶体管的控制输入端和第一电容器的一个端子之间。 最后，第三电阻器连接在第四晶体管的受控路径的另一端和第一电容器的另一端之间。

公开(公告)号：US5986509A

公开(公告)日：1999-11-16

申请号：US123827

申请日：1998-07-28

申请人： Gerhard Lohninger

发明人： Gerhard Lohninger

IPC分类号： H03F1/30 ,  H03F3/19 ,  H03F3/04

CPC分类号： H03F1/302

摘要： A transistor amplifier stage, in particular an RF amplifier stage with an npn amplifier transistor, which is coupled with its base to an alternating voltage input terminal, with its emitter to a fixed potential, and with its collector to an alternating voltage output terminal. An active operating point stabilization unit with a first and a second pnp transistor is provided between a direct voltage input terminal and the base of the npn amplifier transistor.

摘要翻译： 晶体管放大器级，特别是具有npn放大器晶体管的RF放大器级，其与其基极耦合到交流电压输入端，其发射极到固定电位，并且其集电极耦合到交流电压输出端。 具有第一和第二pnp晶体管的有源工作点稳定单元设置在直流电压输入端子和npn放大器晶体管的基极之间。

公开(公告)号：US5483206A

公开(公告)日：1996-01-09

申请号：US156823

申请日：1993-11-24

申请人： Gerhard Lohninger

发明人： Gerhard Lohninger

IPC分类号： H03B5/18 ,  H03B7/14 ,  H01P1/203

CPC分类号： H03B5/1852 ,  H03B5/18 ,  H03B2200/0024

摘要： A voltage-controlled microwave oscillator having a field effect transistor (1) as an amplifier and having a varactor diode (2) as a frequency-determining element has high output power and a large enough frequency sweep in the microwave frequency range that S-parameter scatters of the active components have optimally little influence on the characteristic data of the oscillator. The varactor diode (2) is preceded by a tunable micro stripline filter (3) and the source electrode of the field effect transistor (1) is directly connected to ground in order to form a parallel feedback with the micro stripline filter (3).

摘要翻译： 具有场效应晶体管（1）作为放大器并具有变容二极管（2）作为频率确定元件的压控微波振荡器具有高的输出功率和在微波频率范围内足够大的频率扫描，S参数 有源元件的散射对振荡器的特性数据的影响最小。 变容二极管（2）之前是可调微带线滤波器（3），场效应晶体管（1）的源极直接连接到地，以便与微带线滤波器（3）形成平行反馈。