Display device and method of measuring surface structure thereof
    1.
    发明授权
    Display device and method of measuring surface structure thereof 有权
    显示装置及其表面结构的测量方法

    公开(公告)号:US08605235B2

    公开(公告)日:2013-12-10

    申请号:US12779915

    申请日:2010-05-13

    IPC分类号: G02F1/1335

    摘要: A display device and a method of measuring a surface structure of the same are provided. The display device includes first and second substrates, first and second patterned light-shielding layers, and first and second pixel units. The first patterned light-shielding layer disposed on a surface of the first substrate includes first openings. The second patterned light-shielding layer disposed on the surface of the first substrate in the first patterned light-shielding layer includes second openings. The first pixel unit includes first and second protrusions. The first protrusion correspondingly covers the first openings and a portion of the first patterned light-shielding layer. The second protrusion is disposed in the first and second patterned light-shielding layers. The second pixel unit includes a third protrusion correspondingly covering the second openings and a portion of the second patterned light-shielding layer, wherein sizes of the second openings are smaller than sizes of the first openings.

    摘要翻译: 提供显示装置和测量其表面结构的方法。 显示装置包括第一和第二基板,第一和第二图案化遮光层以及第一和第二像素单元。 设置在第一基板的表面上的第一图案化遮光层包括第一开口。 设置在第一图案化遮光层中的第一基板的表面上的第二图案遮光层包括第二开口。 第一像素单元包括第一和第二突起。 第一突起相应地覆盖第一开口和第一图案化遮光层的一部分。 第二突起设置在第一和第二图案化的遮光层中。 第二像素单元包括对应地覆盖第二开口的第三突起和第二图案化遮光层的一部分,其中第二开口的尺寸小于第一开口的尺寸。

    DISPLAY DEVICE AND METHOD OF MEASURING SURFACE STRUCTURE THEREOF
    5.
    发明申请
    DISPLAY DEVICE AND METHOD OF MEASURING SURFACE STRUCTURE THEREOF 有权
    显示装置及其表面结构的测量方法

    公开(公告)号:US20110128481A1

    公开(公告)日:2011-06-02

    申请号:US12779915

    申请日:2010-05-13

    摘要: A display device and a method of measuring a surface structure of the same are provided. The display device includes first and second substrates, first and second patterned light-shielding layers, and first and second pixel units. The first patterned light-shielding layer disposed on a surface of the first substrate includes first openings. The second patterned light-shielding layer disposed on the surface of the first substrate in the first patterned light-shielding layer includes second openings. The first pixel unit includes first and second protrusions. The first protrusion correspondingly covers the first openings and a portion of the first patterned light-shielding layer. The second protrusion is disposed in the first and second patterned light-shielding layers. The second pixel unit includes a third protrusion correspondingly covering the second openings and a portion of the second patterned light-shielding layer, wherein sizes of the second openings are smaller than sizes of the first openings.

    摘要翻译: 提供显示装置和测量其表面结构的方法。 显示装置包括第一和第二基板,第一和第二图案化遮光层以及第一和第二像素单元。 设置在第一基板的表面上的第一图案化遮光层包括第一开口。 设置在第一图案化遮光层中的第一基板的表面上的第二图案遮光层包括第二开口。 第一像素单元包括第一和第二突起。 第一突起相应地覆盖第一开口和第一图案化遮光层的一部分。 第二突起设置在第一和第二图案化的遮光层中。 第二像素单元包括对应地覆盖第二开口的第三突起和第二图案化遮光层的一部分,其中第二开口的尺寸小于第一开口的尺寸。

    Fabrication of semiconductor integrated circuit chips
    8.
    发明授权
    Fabrication of semiconductor integrated circuit chips 有权
    半导体集成电路芯片的制造

    公开(公告)号:US07268440B2

    公开(公告)日:2007-09-11

    申请号:US10905534

    申请日:2005-01-09

    IPC分类号: H01L23/544

    摘要: A semiconductor wafer includes a plurality of active circuit die areas, each of which being bordered by a dicing line region through which the plurality of active circuit die areas are separated from each other by mechanical wafer dicing. Each of the plurality of active circuit die areas has four sides. An overcoat covers both the active circuit die areas and the dicing line region. An inter-layer dielectric layer is disposed underneath the overcoat. A reinforcement structure includes a plurality of holes formed within the dicing line region. The plurality of holes are formed by etching through the overcoat into the inter-layer dielectric layer and are disposed along the four sides of each active circuit die area. A die seal ring is disposed in between the active circuit chip area and the reinforcement structure.

    摘要翻译: 半导体晶片包括多个有源电路管芯区域,每个有源电路管芯区域由切割线区域界定,多个有源电路管芯区域通过该切割线区域通过机械晶片切割彼此分离。 多个有源电路管芯区域中的每一个具有四个侧面。 覆盖层覆盖有源电路裸片区域和切割线区域。 层间介电层设置在外涂层的下方。 加强结构包括形成在切割线区域内的多个孔。 通过将外涂层蚀刻到层间电介质层中并沿着每个有源电路管芯区域的四个侧面设置多个孔。 模具密封环设置在有源电路芯片区域和加强结构之间。

    FABRICATION OF SEMICONDUCTOR INTEGRATED CIRCUIT CHIPS
    10.
    发明申请
    FABRICATION OF SEMICONDUCTOR INTEGRATED CIRCUIT CHIPS 审中-公开
    半导体集成电路芯片的制造

    公开(公告)号:US20060278957A1

    公开(公告)日:2006-12-14

    申请号:US11160106

    申请日:2005-06-09

    IPC分类号: H01L23/544

    CPC分类号: H01L21/78

    摘要: A semiconductor wafer includes a plurality of active circuit die areas, each of which being bordered by a dicing line region through which the plurality of active circuit die areas are separated from each other, wherein each of the plurality of active circuit die areas has substantially four corners. An overcoat is deposited to cover both the active circuit die areas and the dicing line region. A first trench is formed by etching through the overcoat and disposed merely around the four corners of each active circuit die area. A reinforcing second trench is etched into the overcoat and is disposed in proximity to the first trench. A die seal ring is disposed in between the active circuit chip area and the first trench.

    摘要翻译: 半导体晶片包括多个有源电路管芯区域,每个有源电路管芯区域由多个有源电路管芯区域彼此分离的切割线区域界定,其中多个有源电路管芯区域中的每一个具有基本上四个 角落 沉积外涂层以覆盖有源电路裸片区域和切割线区域。 通过蚀刻穿过外涂层并且仅设置在每个有源电路管芯区域的四个角落周围形成第一沟槽。 加强第二沟槽被蚀刻到外涂层中并且设置在第一沟槽附近。 模具密封环设置在有源电路芯片区域和第一沟槽之间。