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    Method of manufacturing self-ordered nanochannel-array and method of manufacturing nanodot using the nanochannel-array
    4.
    发明授权
    Method of manufacturing self-ordered nanochannel-array and method of manufacturing nanodot using the nanochannel-array 失效
    使用纳米通道阵列制造自定序纳米通道阵列的方法和制造纳米点的方法

    公开(公告)号：US07901586B2

    公开(公告)日：2011-03-08

    申请号：US11882112

    申请日：2007-07-30

    申请人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

    发明人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

    IPC分类号： B44C1/22 ,  H01L21/302

    CPC分类号： B82B3/00 ,  B29C59/022 ,  B29C59/026 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/32139

    摘要： A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.

    摘要翻译： 提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。 纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。 阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

    Method of manufacturing transistor that utilizes current direction limiting units between phase change layer and bit lines and between phase change layer and word lines
    5.
    发明授权
    Method of manufacturing transistor that utilizes current direction limiting units between phase change layer and bit lines and between phase change layer and word lines 失效
    制造晶体管的方法，其利用相变层和位线之间以及相变层和字线之间的电流方向限制单元

    公开(公告)号：US07638361B2

    公开(公告)日：2009-12-29

    申请号：US12216742

    申请日：2008-07-10

    申请人： Choong-Rae Cho ,  In-Kyeong Yoo ,  Myoung-Jae Lee

    发明人： Choong-Rae Cho ,  In-Kyeong Yoo ,  Myoung-Jae Lee

    IPC分类号： H01L21/8239

    CPC分类号： H01L29/685

    摘要： A transistor in which a physical property of its channel is changed according to an applied voltage, and methods of manufacturing and operating the same are provided. The transistor may include a first conductive layer on a substrate, a phase change layer and a second conductive layer which are sequentially stacked on the first conductive layer, a first current direction limiting unit and a second current direction limiting unit formed on the second conductive layer by being separated within a space, a third conductive layer and a fourth conductive layer formed on the first current direction limiting unit and the second current direction limiting unit, respectively, a word line connected to the third conductive layer, a bit line connected to the fourth conductive layer, and a voltage lowering unit connected to the word line.

    摘要翻译： 提供其通道的物理特性根据施加的电压而改变的晶体管，并且提供其制造和操作方法。 晶体管可以包括基板上的第一导电层，相继层叠在第一导电层上的相变层和第二导电层，形成在第二导电层上的第一电流方向限制单元和第二电流方向限制单元 通过在空间内分离，分别形成在第一电流方向限制单元和第二电流方向限制单元上的第三导电层和第四导电层，连接到第三导电层的字线，连接到第三导电层的位线 第四导电层和连接到字线的降压单元。

    ELECTRIC FIELD READ/WRITE HEAD, METHOD OF MANUFACTURING THE ELECTRIC FIELD READ/WRITE HEAD, AND INFORMATION STORAGE DEVICE INCLUDING THE ELECTRIC FIELD READ/WRITE HEAD
    6.
    发明申请
    ELECTRIC FIELD READ/WRITE HEAD, METHOD OF MANUFACTURING THE ELECTRIC FIELD READ/WRITE HEAD, AND INFORMATION STORAGE DEVICE INCLUDING THE ELECTRIC FIELD READ/WRITE HEAD 审中-公开
    电场读/写头，制造电场读/写头的方法和包括电场读/写头的信息存储装置

    公开(公告)号：US20090285082A1

    公开(公告)日：2009-11-19

    申请号：US12251072

    申请日：2008-10-14

    申请人： Hyoung-soo KO ,  In-kyeong YOO ,  Ju-hwan JUNG ,  Chul-min PARK

    发明人： Hyoung-soo KO ,  In-kyeong YOO ,  Ju-hwan JUNG ,  Chul-min PARK

    IPC分类号： G11B9/00 ,  H01L21/00

    CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

    摘要： An electric field head includes a body portion and a read head having a channel layer provided on an air bearing surface (ABS) of the body portion facing a recording medium and a source and a drain contacting both ends of the channel layer. The electric field head is manufactured by defining a head forming portion of a substrate, separating the head forming portion from the substrate, forming an ABS pattern on a side surface of the separated head forming portion, and forming a channel layer for a read head on a surface of the head forming portion where the ABS pattern is formed. An information storage device includes a ferroelectric recording medium and the electric field head.

    摘要翻译： 电场头包括主体部分和读取头，其具有设置在主体部分面向记录介质的空气轴承表面（ABS）上的通道层，以及与沟道层两端接触的源极和漏极。 通过限定基板的头部形成部分来制造电场磁头，将磁头形成部分与基板分离，在分离的磁头形成部分的侧表面上形成ABS图案，并且形成用于读取磁头的通道层 形成ABS图案的头部形成部分的表面。 信息存储装置包括铁电记录介质和电场磁头。

    Non-volatile memory device and method of fabricating the same
    7.
    发明申请
    Non-volatile memory device and method of fabricating the same 审中-公开
    非易失性存储器件及其制造方法

    公开(公告)号：US20090045450A1

    公开(公告)日：2009-02-19

    申请号：US11976250

    申请日：2007-10-23

    申请人： June-mo Koo ,  Suk-pil Kim ,  Young-gu Jin ,  Won-joo Kim ,  In-kyeong Yoo ,  Yoon-dong Park

    发明人： June-mo Koo ,  Suk-pil Kim ,  Young-gu Jin ,  Won-joo Kim ,  In-kyeong Yoo ,  Yoon-dong Park

    IPC分类号： H01L29/788 ,  H01L21/336

    CPC分类号： H01L29/66825 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7881

    摘要： Provided are a non-volatile memory device, which may have higher integration density, improved or optimal structure, and/or reduce or minimize interference between adjacent cells without using an SOI substrate, and a method of fabricating the non-volatile memory device. The non-volatile memory device may include: a semiconductor substrate comprising a body, and a pair of fins protruding from the body; a buried insulating layer filling between the pair of fins; a pair of floating gate electrodes on outer surfaces of the pair of fins to a height greater than that of the pair of fins; and a control gate electrode on the pair of floating gate electrodes.

    摘要翻译： 提供了一种非易失性存储器件，其可以具有更高的集成密度，改进的或最优的结构，和/或减少或最小化相邻单元之间的干扰而不使用SOI衬底，以及制造非易失性存储器件的方法。 非易失性存储器件可以包括：半导体衬底，其包括主体和从主体突出的一对鳍; 埋在绝缘层之间的一对散热片; 一对浮栅电极，其在所述一对翅片的外表面上的高度大于所述一对鳍片的高度; 以及一对浮栅上的控制栅电极。

    High density data recording/reproduction method utilizing electron emission and phase change media, and data recording system adopting the same, and media for the system
    9.
    发明授权
    High density data recording/reproduction method utilizing electron emission and phase change media, and data recording system adopting the same, and media for the system 失效
    利用电子发射和相变介质的高密度数据记录/再现方法，以及采用该方法的数据记录系统以及该系统的介质

    公开(公告)号：US07355951B2

    公开(公告)日：2008-04-08

    申请号：US10252085

    申请日：2002-09-23

    申请人： In-kyeong Yoo ,  Won-bong Choi ,  Hyun-jung Shin

    发明人： In-kyeong Yoo ,  Won-bong Choi ,  Hyun-jung Shin

    IPC分类号： G11B9/00

    CPC分类号： G11B9/10 ,  B82Y10/00 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1418 ,  G11B9/1463 ,  G11B11/115

    摘要： A rapid data recording/reproducing method, a data recording system adopting the same, media for the system, and a tracking method, wherein the recording/reproducing method includes preparing media having a data recording layer in which a phase change is generated through electron absorption, generating electrons using an electron generating source at a position separated from the data recording layer by a predetermined interval, forming a magnetic field on the path of the electrons and cyclotron moving the electrons, recording data through local melting and cooling due to absorption of the electrons by the data recording layer. A micro-tip does not contact the data recording layer during electron collisions therewith, hence no damage is caused by or to the micro-tip. The present invention allows the region where the electron beam reaches the data recording layer to be minimized thereby maximizing the data recording density.

    摘要翻译： 一种快速数据记录/再现方法，采用该记录系统的数据记录系统，用于该系统的介质和跟踪方法，其中记录/再现方法包括制备具有通过电子吸收产生相变的数据记录层的介质 在与数据记录层隔开预定间隔的位置处使用电子发生源产生电子，在电子和回旋加速器的移动电子的路径上形成磁场，通过局部熔化和冷却来记录数据 电子由数据记录层。 在与电子碰撞期间，微尖端不接触数据记录层，因此不会对微尖端造成损伤。 本发明允许电子束到达数据记录层的区域最小化，从而最大化数据记录密度。