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11 条记录 (耗时 0.017 秒)

    Light emitting device
    1.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08748865B2

    公开(公告)日：2014-06-10

    申请号：US13585481

    申请日：2012-08-14

    申请人： Jong Hak Won ,  Jong Ho Na ,  Jae In Yoon ,  Hoon ki Hong ,  Se Hwan Sim

    发明人： Jong Hak Won ,  Jong Ho Na ,  Jae In Yoon ,  Hoon ki Hong ,  Se Hwan Sim

    IPC分类号： H01L21/00 ,  H01L21/66

    CPC分类号： H01L33/06 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

    摘要： Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a first conductive semiconductor layer; an active layer including a quantum well and a quantum barrier and disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The active layer includes a first quantum well adjacent to the second conductive semiconductor layer, a second quantum well adjacent to the first quantum well, and a first quantum barrier between the first quantum well and the second quantum well. A recombination rate of electron-hole in the second quantum well is higher than the recombination rate of the electron-hole in the first quantum well, and the first quantum well has an energy level higher than the energy level of the second quantum well.

    摘要翻译： 公开了发光器件，制造发光器件的方法，发光器件封装和照明系统。 发光器件包括第一导电半导体层; 包括量子阱和量子势垒的有源层，并设置在第一导电半导体层上; 以及在所述有源层上的第二导电半导体层。 有源层包括与第二导电半导体层相邻的第一量子阱，与第一量子阱相邻的第二量子阱以及第一量子阱和第二量子阱之间的第一量子势垒。 第二量子阱中电子空穴的复合速率高于第一量子阱中电子空穴的复合速率，第一量子阱的能级高于第二量子阱的能级。

    Method and Apparatus for Enhancing User Interface in a Device with Touch Screen
    8.
    发明申请
    Method and Apparatus for Enhancing User Interface in a Device with Touch Screen 审中-公开
    用于增强触摸屏设备中用户界面的方法和装置

    公开(公告)号：US20150067570A1

    公开(公告)日：2015-03-05

    申请号：US14018248

    申请日：2013-09-04

    申请人： Jae in Yoon ,  Jae Seok Ahn

    发明人： Jae in Yoon ,  Jae Seok Ahn

    IPC分类号： G06F3/0484 ,  G06F3/0488

    CPC分类号： G06F3/04886 ,  G06F2203/04108 ,  G06F2203/04805

    摘要： The present invention provides method and apparatus for providing an enhanced user interface at devices equipped with touch screens. The present invention enables users to more easily and accurately select an object among multiple selectable objects competing within limited screen space by enlarging the desired object as user's finger or a stylus pen approaches the object before physically touching it on the touch screen.

    摘要翻译： 本发明提供了用于在配备有触摸屏的设备处提供增强的用户界面的方法和装置。 本发明使得用户能够在用户的手指或触针笔在触摸屏上物理触摸物体之前放大所需对象，从而在有限的屏幕空间内竞争的多个可选择对象中更容易且准确地选择对象。

    LIGHT EMITTING DEVICE
    10.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20130048944A1

    公开(公告)日：2013-02-28

    申请号：US13585481

    申请日：2012-08-14

    申请人： Jong Hak WON ,  Jong Ho Na ,  Jae In Yoon ,  Hoon Ki Hong ,  Se Hwan Sim

    发明人： Jong Hak WON ,  Jong Ho Na ,  Jae In Yoon ,  Hoon Ki Hong ,  Se Hwan Sim

    IPC分类号： H01L33/04

    CPC分类号： H01L33/06 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

    摘要： Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a first conductive semiconductor layer; an active layer including a quantum well and a quantum barrier and disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The active layer includes a first quantum well adjacent to the second conductive semiconductor layer, a second quantum well adjacent to the first quantum well, and a first quantum barrier between the first quantum well and the second quantum well. A recombination rate of electron-hole in the second quantum well is higher than the recombination rate of the electron-hole in the first quantum well, and the first quantum well has an energy level higher than the energy level of the second quantum well.

    摘要翻译： 公开了发光器件，制造发光器件的方法，发光器件封装和照明系统。 发光器件包括第一导电半导体层; 包括量子阱和量子势垒的有源层，并设置在第一导电半导体层上; 以及在所述有源层上的第二导电半导体层。 有源层包括与第二导电半导体层相邻的第一量子阱，与第一量子阱相邻的第二量子阱以及第一量子阱和第二量子阱之间的第一量子势垒。 第二量子阱中电子空穴的复合速率高于第一量子阱中电子空穴的复合速率，第一量子阱的能级高于第二量子阱的能级。